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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
7334
World Ranking
5932
National Ranking
258

Overview

Paolo Pavan is affiliated with the University of Modena and Reggio Emilia in Italy. Their research primarily focuses on areas within engineering, with a specialization in electrical and electronic engineering. The body of work covers subfields that include condensed matter physics, cellular and molecular neuroscience, electronic, optical and magnetic materials, and materials chemistry.

The scientist's research spans multiple main topics, notably:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • GaN-based semiconductor devices and materials
  • Neuroscience and Neural Engineering
  • Advancements in Semiconductor Devices and Circuit Design
  • Ga2O3 and related materials

Pavan's publication record includes frequent contributions to journals such as:

  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Device and Materials Reliability
  • IEEE Journal of the Electron Devices Society
  • Micromachines
  • Solid-State Electronics

Some of the recent papers authored or coauthored by Paolo Pavan include:

  • Smart Logic-in-Memory Architecture for Low-Power Non-Von Neumann Computing, 2020, IEEE Journal of the Electron Devices Society
  • "Hole Redistribution" Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, 2021, IEEE Transactions on Electron Devices
  • Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges, 2023, Proceedings of the IEEE
  • Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices, 2020, IEEE Journal on Emerging and Selected Topics in Circuits and Systems
  • A memory window expression to evaluate the endurance of ferroelectric FETs, 2020, Applied Physics Letters

Collaborations appear regularly in the form of coauthorship with researchers such as Francesco Maria Puglisi, Tommaso Zanotti, Nicolò Zagni, G. Verzellesi, and Alessandro Chini.

Best Publications

  • NROM: A novel localized trapping, 2-bit nonvolatile memory cell

    B. Eitan;P. Pavan;I. Bloom;E. Aloni

  • Flash memory cells-an overview

    P. Pavan;R. Bez;P. Olivo;E. Zanoni

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?

    Boaz Eitan;Paolo Pavan;Ilan Bloom;Efraim Aloni

  • Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

    L. Larcher;G. Verzellesi;P. Pavan;E. Lusky

  • A Complete Statistical Investigation of RTN in HfO 2 -Based RRAM in High Resistive State

    Francesco Maria Puglisi;Luca Larcher;Andrea Padovani;Paolo Pavan

  • A solar energy harvesting circuit for low power applications

    D. Dondi;A. Bertacchini;L. Larcher;P. Pavan

  • NROM (TM) - a new technology for non-volatile memory products

    Ilan Bloom;Paolo Pavan;Boaz Eitan

  • Carbon-doped GeTe: A promising material for Phase-Change Memories

    G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  • An Empirical Model for RRAM Resistance in Low- and High-Resistance States

    F. M. Puglisi;L. Larcher;G. Bersuker;A. Padovani

  • Photovoltaic cell modeling for solar energy powered sensor networks

    D. Dondi;D. Brunelli;L. Benini;P. Pavan

  • Charge Transport and Degradation in HfO 2 and HfO x Dielectrics

    A. Padovani;L. Larcher;G. Bersuker;P. Pavan

  • A Compact Model of Program Window in HfO x RRAM Devices for Conductive Filament Characteristics Analysis

    Luca Larcher;Francesco Maria Puglisi;Paolo Pavan;Andrea Padovani

  • Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

    L. Vandelli;A. Padovani;L. Larcher;G. Broglia

  • Floating Gate Devices: Operation and Compact Modeling

    Luca Larcher;Andrea Marmiroli;Paolo Pavan

  • Photovoltaic scavenging systems: Modeling and optimization

    D. Brunelli;D. Dondi;A. Bertacchini;L. Larcher

  • Smart Logic-in-Memory Architecture for Low-Power Non-Von Neumann Computing

    Tommaso Zanotti;Francesco Maria Puglisi;Paolo Pavan

  • Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

    G. Betti Beneventi;A. Calderoni;P. Fantini;Luca Larcher

  • A new compact DC model of floating gate memory cells without capacitive coupling coefficients

    L. Larcher;P. Pavan;S. Pietri;L. Albani

  • Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

    Francesco Maria Puglisi;Nicolo Zagni;Luca Larcher;Paolo Pavan

  • Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors

    Enrico Zanoni;Stefano Bigliardi;Paolo Pavan;Pietro Pisoni

Frequent Co-Authors

Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Enrico Zanoni
Enrico Zanoni University of Padua
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Paolo Lugli
Paolo Lugli Free University of Bozen-Bolzano
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Chenming Hu
Chenming Hu University of California, Berkeley
Davide Brunelli
Davide Brunelli University of Trento
Luca Benini
Luca Benini ETH Zurich

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