World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
7334
World Ranking
5932
National Ranking
258

Paolo Pavan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paolo Pavan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 273 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Paolo Pavan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paolo Pavan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Paolo Pavan is affiliated with the University of Modena and Reggio Emilia in Italy. Their research primarily focuses on areas within engineering, with a specialization in electrical and electronic engineering. The body of work covers subfields that include condensed matter physics, cellular and molecular neuroscience, electronic, optical and magnetic materials, and materials chemistry.

The scientist's research spans multiple main topics, notably:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • GaN-based semiconductor devices and materials
  • Neuroscience and Neural Engineering
  • Advancements in Semiconductor Devices and Circuit Design
  • Ga2O3 and related materials

Pavan's publication record includes frequent contributions to journals such as:

  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Device and Materials Reliability
  • IEEE Journal of the Electron Devices Society
  • Micromachines
  • Solid-State Electronics

Some of the recent papers authored or coauthored by Paolo Pavan include:

  • Smart Logic-in-Memory Architecture for Low-Power Non-Von Neumann Computing, 2020, IEEE Journal of the Electron Devices Society
  • "Hole Redistribution" Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs, 2021, IEEE Transactions on Electron Devices
  • Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges, 2023, Proceedings of the IEEE
  • Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices, 2020, IEEE Journal on Emerging and Selected Topics in Circuits and Systems
  • A memory window expression to evaluate the endurance of ferroelectric FETs, 2020, Applied Physics Letters

Collaborations appear regularly in the form of coauthorship with researchers such as Francesco Maria Puglisi, Tommaso Zanotti, Nicolò Zagni, G. Verzellesi, and Alessandro Chini.

Best Publications

  • NROM: A novel localized trapping, 2-bit nonvolatile memory cell

    B. Eitan;P. Pavan;I. Bloom;E. Aloni

  • Flash memory cells-an overview

    P. Pavan;R. Bez;P. Olivo;E. Zanoni

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Can NROM, a 2 Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?

    Boaz Eitan;Paolo Pavan;Ilan Bloom;Efraim Aloni

  • Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

    L. Larcher;G. Verzellesi;P. Pavan;E. Lusky

  • A Complete Statistical Investigation of RTN in HfO 2 -Based RRAM in High Resistive State

    Francesco Maria Puglisi;Luca Larcher;Andrea Padovani;Paolo Pavan

  • A solar energy harvesting circuit for low power applications

    D. Dondi;A. Bertacchini;L. Larcher;P. Pavan

  • NROM (TM) - a new technology for non-volatile memory products

    Ilan Bloom;Paolo Pavan;Boaz Eitan

  • Carbon-doped GeTe: A promising material for Phase-Change Memories

    G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  • An Empirical Model for RRAM Resistance in Low- and High-Resistance States

    F. M. Puglisi;L. Larcher;G. Bersuker;A. Padovani

  • Photovoltaic cell modeling for solar energy powered sensor networks

    D. Dondi;D. Brunelli;L. Benini;P. Pavan

  • Charge Transport and Degradation in HfO 2 and HfO x Dielectrics

    A. Padovani;L. Larcher;G. Bersuker;P. Pavan

  • A Compact Model of Program Window in HfO x RRAM Devices for Conductive Filament Characteristics Analysis

    Luca Larcher;Francesco Maria Puglisi;Paolo Pavan;Andrea Padovani

  • Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

    L. Vandelli;A. Padovani;L. Larcher;G. Broglia

  • Floating Gate Devices: Operation and Compact Modeling

    Luca Larcher;Andrea Marmiroli;Paolo Pavan

  • Photovoltaic scavenging systems: Modeling and optimization

    D. Brunelli;D. Dondi;A. Bertacchini;L. Larcher

  • Smart Logic-in-Memory Architecture for Low-Power Non-Von Neumann Computing

    Tommaso Zanotti;Francesco Maria Puglisi;Paolo Pavan

  • Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

    G. Betti Beneventi;A. Calderoni;P. Fantini;Luca Larcher

  • A new compact DC model of floating gate memory cells without capacitive coupling coefficients

    L. Larcher;P. Pavan;S. Pietri;L. Albani

  • Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

    Francesco Maria Puglisi;Nicolo Zagni;Luca Larcher;Paolo Pavan

  • Measurements of Avalanche Effects and Light Emission in Advanced Si and SiGe Bipolar Transistors

    Enrico Zanoni;Stefano Bigliardi;Paolo Pavan;Pietro Pisoni

Frequent Co-Authors

Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Enrico Zanoni
Enrico Zanoni University of Padua
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Paolo Lugli
Paolo Lugli Free University of Bozen-Bolzano
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Chenming Hu
Chenming Hu University of California, Berkeley
Davide Brunelli
Davide Brunelli University of Trento
Luca Benini
Luca Benini ETH Zurich

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