World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
9149
World Ranking
2123
National Ranking
29

Hang-Ting Lue publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hang-Ting Lue sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 304 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hang-Ting Lue D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hang-Ting Lue sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hang-Ting Lue is affiliated with Macronix International in Taiwan and focuses primarily on engineering, particularly within electrical and electronic engineering. Their research spans a range of topics related to semiconductor devices and advanced memory technologies.

The main topics of their work include:

  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Electronic and Structural Properties of Oxides
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Data Storage Technologies
  • Advanced Neural Network Applications

Their frequent co-authors comprise researchers involved in related fields, including:

  • Keh-Chung Wang
  • Tzu-Hsuan Hsu
  • Teng-Hao Yeh
  • Chih-Yuan Lu
  • Wei-Chen Chen

Hang-Ting Lue has published in several key venues, particularly those related to electron devices and semiconductor research. Frequent publication venues include:

  • 2022 International Electron Devices Meeting (IEDM)
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Transactions on Electron Devices
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials

Recent notable papers by Hang-Ting Lue include:

  • Analog Computing in Memory (CIM) Technique for General Matrix Multiplication (GEMM) to Support Deep Neural Network (DNN) and Cosine Similarity Search Computing using 3D AND-type NOR Flash Devices, 2022, 2022 International Electron Devices Meeting (IEDM)
  • First Theoretical Modeling of the Bandgap-Engineered Oxynitride Tunneling Dielectric for 3D Flash Memory Devices Starting from the Ab Initio Calculation of the Band Diagram to Understand the Programming, Erasing and Reliability, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μA Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature, 2022, 2022 International Electron Devices Meeting (IEDM)
  • A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash, 2020, IEEE Transactions on Electron Devices
  • A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances, 2020, IEEE Transactions on Electron Devices

Best Publications

  • A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

    Hang-Ting Lue;Tzu-Hsuan Hsu;Yi-Hsuan Hsiao;S. P. Hong

  • Integrated circuit self aligned 3D memory array and manufacturing method

    Hang Ting Lue

  • Memory device, manufacturing method and operating method of the same

    Hang-Ting Lue;Shih-Hung Chen

  • Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays

    Szu Yu Wang;Hang-Ting Lue

  • Integrated circuit 3D memory array and manufacturing method

    Hsiang-Lan Lung;Hang-Ting Lue

  • BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

    Hang-Ting Lue;Szu-Yu Wang;Erh-Kun Lai;Yen-Hao Shih

  • 3d memory array arranged for fn tunneling program and erase

    Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee

  • Cell operation methods using gate-injection for floating gate nand flash memory

    Hang-Ting Lue;Tzu-Hsuan Hsu;Erh-Kun Lai

  • Device modeling of ferroelectric memory field-effect transistor (FeMFET)

    Hang-Ting Lue;Chien-Jang Wu;Tseung-Yuen Tseng

  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

    Erh-Kun Lai;Hang-Ting Lue;Yi-Hsuan Hsiao;Jung-Yu Hsieh

  • Memory architecture of 3D array with diode in memory string

    Chun-Hsiung Hung;Shin-Jang Shen;Hang-Ting Lue

  • Non-volatile memory device with a threshold voltage change rate controlled by gate oxide phase

    Sheng-Chih Lai;Hang-Ting Lue

  • Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

    Tzu-Hsuan Hsu;Hang-Ting Lue;Chih-Chang Hsieh;Erh-Kun Lai

  • Integrated circuit having capacitor with 3D NAND memory and manufacturing method thereof

    Hang-Ting Lue;Teng-Hao Yeh

  • A highly pitch scalable 3D vertical gate (VG) NAND flash decoded by a novel self-aligned independently controlled double gate (IDG) string select transistor (SSL)

    Chih-Ping Chen;Hang-Ting Lue;Kuo-Pin Chang;Yi-Hsuan Hsiao

  • Operation scheme with charge balancing erase for charge trapping non-volatile memory

    Hang-Ting Lue;Yen-Hao Shih;Kuang Yeu Hsieh

  • A highly scalable vertical gate (VG) 3D NAND Flash with robust program disturb immunity using a novel PN diode decoding structure

    Chun-Hsiung Hung;Hang-Ting Lue;Kuo-Pin Chang;Chih-Ping Chen

  • Operation scheme for spectrum shift in charge trapping non-volatile memory

    Hang-Ting Lue;Yen-Hao Shih;Kuang Yeu Hsieh;Ming-Hsiu Lee

  • Methods of operating non-volatile memory devices

    Hang-Ting Lue

  • 3D independent double gate flash memory on bounded conductor layer

    Hang-Ting Lue

Frequent Co-Authors

Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Ya-Chin King
Ya-Chin King National Tsing Hua University
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Tei-Wei Kuo
Tei-Wei Kuo National Taiwan University
Tuo-Hung Hou
Tuo-Hung Hou National Yang Ming Chiao Tung University
Jian-Jia Chen
Jian-Jia Chen TU Dortmund University

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