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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 51 2653 2545 35 35 163 10735

Hsiang-Lan Lung publications per year

The chart shows the history of publications by Hsiang-Lan Lung between 1999 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hsiang-Lan Lung published across 26 years, from 1999 to 2024, averaging 6.5 papers a year. Output peaked at 17 publications in 2008. 1 of the 170 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1999 to 2024. Vertical axis: number of publications, 0 to 17. Peak 17 publications in 2008. 1999: 1 publication 2000: 4 publications 2001: 3 publications 2002: 6 publications 2003: 8 publications 2004: 9 publications 2005: 8 publications 2006: 12 publications 2007: 13 publications 2008: 17 publications 2009: 11 publications 2010: 13 publications 2011: 10 publications 2012: 7 publications 2013: 4 publications 2014: 4 publications 2015: 1 publication 2016: 7 publications 2017: 9 publications 2018: 7 publications 2019: 6 publications 2020: 8 publications 2021: 1 publication 2022: 0 publications 2023: 0 publications 2024: 1 publication
1999 2024

170 publications in total across all disciplines

View publications per year as a table
Hsiang-Lan Lung: publications per year, 1999 to 2024
Year Publications
1999 1
2000 4
2001 3
2002 6
2003 8
2004 9
2005 8
2006 12
2007 13
2008 17
2009 11
2010 13
2011 10
2012 7
2013 4
2014 4
2015 1
2016 7
2017 9
2018 7
2019 6
2020 8
2021 1
2022 0
2023 0
2024 1
Total 170
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Hsiang-Lan Lung publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hsiang-Lan Lung sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 163 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 163
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Hsiang-Lan Lung D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hsiang-Lan Lung sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 51 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156 51
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Hsiang-Lan Lung is affiliated with Macronix International in Taiwan and has contributed to research in engineering, computer science, and materials science. Their work primarily focuses on electrical and electronic engineering, materials chemistry, artificial intelligence, hardware and architecture, and computer vision and pattern recognition.

The scientist's research covers key topics including advanced memory and neural computing, ferroelectric and negative capacitance devices, phase-change materials and chalcogenides, physical unclonable functions (PUFs) and hardware security, chaos-based image and signal encryption, cryptographic implementations and security, as well as quantum dots synthesis and properties.

Hsiang-Lan Lung has published papers in various venues, notably:

  • ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics, 2021, IEEE Transactions on Electron Devices
  • Analog Coding in Emerging Memory Systems, 2020, Scientific Reports
  • A GexSe1-x switch-only-memory technology through polarized atomic distribution, 2024, Scientific Reports
  • Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system, 2020, Japanese Journal of Applied Physics
  • Author Correction: Analog Coding in Emerging Memory Systems, 2020, Scientific Reports

Frequent co-authors collaborating with Hsiang-Lan Lung include Yu-Hsuan Lin, Ming-Hsiu Lee, Keh-Chung Wang, Chih-Yuan Lu, and Ryan Zarcone.

The publications from this scientist are found predominantly in the following venues:

  • Scientific Reports
  • IEEE Transactions on Electron Devices
  • Japanese Journal of Applied Physics
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials

Best Publications

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Self-aligned, programmable phase change memory and method for manufacturing the same

    Lung Hsiang-Lan

  • Recent Progress in Phase-Change Memory Technology

    Geoffrey W. Burr;Matthew J. BrightSky;Abu Sebastian;Huai-Yu Cheng

  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

    T. Nirschl;J.B. Phipp;T.D. Happ;G.W. Burr

  • Phase change memory cell and manufacturing method

    Hsiang-Lan Lung;Rich Liu;Shih-Hung Chen;Yi-Chou Chen

  • Spacer chalcogenide memory method

    Hsiang Lan Lung

  • High density chalcogenide memory cells

    Hsiang Lan Lung

  • Phase change memory device and manufacturing method

    Hsiang Lan Lung;Shih-Hung Chen

  • Thin film fuse phase change RAM and manufacturing method

    Hsiang Lan Lung;Shih-Hung Chen

  • Thin film plate phase change RAM circuit and manufacturing method

    Shih Hung Chen;Hsiang Lan Lung

  • Vacuum jacket for phase change memory element

    Hsiang Lan Lung

  • A pipe shaped phase change memory forming method

    Lung Hsiang L

  • Integrated circuit 3D memory array and manufacturing method

    Hsiang-Lan Lung;Hang-Ting Lue

  • Vacuum jacketed electrode for phase change memory element

    Hsiang Lan Lung

  • Spacer electrode small pin phase change memory RAM and manufacturing method

    Hsiang Lan Lung;Shih Hung Chen

  • 3d memory array arranged for fn tunneling program and erase

    Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee

  • Improved thermal isolation for an active-sidewall phase change memory cell

    Lung Hsiang Lan

  • Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram

    Hsiang Lan Lung

  • Method for Manufacturing a Narrow Structure on an Integrated Circuit

    Hsiang Lan Lung;ChiaHua Ho;Shih Hung Chen;Chieh Fang Chen

  • 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate

    Hsiang Lan Lung;Tao Cheng Lu;Mam Tsung Wang

Frequent Co-Authors

Matthew J. Breitwisch
Matthew J. Breitwisch IBM (United States)
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Chung H. Lam
Chung H. Lam IBM (United States)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Bipin Rajendran
Bipin Rajendran King's College London
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Geoffrey W. Burr
Geoffrey W. Burr IBM (United States)

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