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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
10735
World Ranking
2653
National Ranking
35

Overview

Hsiang-Lan Lung is affiliated with Macronix International in Taiwan and has contributed to research in engineering, computer science, and materials science. Their work primarily focuses on electrical and electronic engineering, materials chemistry, artificial intelligence, hardware and architecture, and computer vision and pattern recognition.

The scientist's research covers key topics including advanced memory and neural computing, ferroelectric and negative capacitance devices, phase-change materials and chalcogenides, physical unclonable functions (PUFs) and hardware security, chaos-based image and signal encryption, cryptographic implementations and security, as well as quantum dots synthesis and properties.

Hsiang-Lan Lung has published papers in various venues, notably:

  • ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics, 2021, IEEE Transactions on Electron Devices
  • Analog Coding in Emerging Memory Systems, 2020, Scientific Reports
  • A GexSe1-x switch-only-memory technology through polarized atomic distribution, 2024, Scientific Reports
  • Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system, 2020, Japanese Journal of Applied Physics
  • Author Correction: Analog Coding in Emerging Memory Systems, 2020, Scientific Reports

Frequent co-authors collaborating with Hsiang-Lan Lung include Yu-Hsuan Lin, Ming-Hsiu Lee, Keh-Chung Wang, Chih-Yuan Lu, and Ryan Zarcone.

The publications from this scientist are found predominantly in the following venues:

  • Scientific Reports
  • IEEE Transactions on Electron Devices
  • Japanese Journal of Applied Physics
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials

Best Publications

  • Phase-change random access memory: a scalable technology

    S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner

  • Self-aligned, programmable phase change memory and method for manufacturing the same

    Lung Hsiang-Lan

  • Recent Progress in Phase-Change Memory Technology

    Geoffrey W. Burr;Matthew J. BrightSky;Abu Sebastian;Huai-Yu Cheng

  • Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory

    T. Nirschl;J.B. Phipp;T.D. Happ;G.W. Burr

  • Phase change memory cell and manufacturing method

    Hsiang-Lan Lung;Rich Liu;Shih-Hung Chen;Yi-Chou Chen

  • Spacer chalcogenide memory method

    Hsiang Lan Lung

  • High density chalcogenide memory cells

    Hsiang Lan Lung

  • Phase change memory device and manufacturing method

    Hsiang Lan Lung;Shih-Hung Chen

  • Thin film fuse phase change RAM and manufacturing method

    Hsiang Lan Lung;Shih-Hung Chen

  • Thin film plate phase change RAM circuit and manufacturing method

    Shih Hung Chen;Hsiang Lan Lung

  • Vacuum jacket for phase change memory element

    Hsiang Lan Lung

  • A pipe shaped phase change memory forming method

    Lung Hsiang L

  • Integrated circuit 3D memory array and manufacturing method

    Hsiang-Lan Lung;Hang-Ting Lue

  • Vacuum jacketed electrode for phase change memory element

    Hsiang Lan Lung

  • Spacer electrode small pin phase change memory RAM and manufacturing method

    Hsiang Lan Lung;Shih Hung Chen

  • 3d memory array arranged for fn tunneling program and erase

    Hsiang-Lan Lung;Yen-Hao Shih;Erh-Kun Lai;Ming Hsiu Lee

  • Improved thermal isolation for an active-sidewall phase change memory cell

    Lung Hsiang Lan

  • Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram

    Hsiang Lan Lung

  • Method for Manufacturing a Narrow Structure on an Integrated Circuit

    Hsiang Lan Lung;ChiaHua Ho;Shih Hung Chen;Chieh Fang Chen

  • 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate

    Hsiang Lan Lung;Tao Cheng Lu;Mam Tsung Wang

Frequent Co-Authors

Matthew J. Breitwisch
Matthew J. Breitwisch IBM (United States)
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Chung H. Lam
Chung H. Lam IBM (United States)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie
Bipin Rajendran
Bipin Rajendran King's College London
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)

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