Chung H. Lam focuses on Electronic engineering, Phase-change memory, Optoelectronics, Phase-change material and Electrical engineering. His Electronic engineering research includes elements of Energy consumption, Non-volatile memory, Resistive touchscreen and Sense amplifier. His studies deal with areas such as Voltage, Flash memory and Memory cell as well as Non-volatile memory.
The concepts of his Phase-change memory study are interwoven with issues in Neuromorphic engineering, Switching time and State. His work carried out in the field of Phase-change material brings together such families of science as Nanotechnology, Field-effect transistor, Tellurium, Silicon on insulator and Substrate. Chung H. Lam has researched Electrical engineering in several fields, including Computer hardware and Substrate.
The scientist’s investigation covers issues in Phase-change memory, Electronic engineering, Optoelectronics, Electrical engineering and Phase-change material. His research integrates issues of Reset, Amorphous solid, Amorphous phase and Computer hardware in his study of Phase-change memory. His biological study spans a wide range of topics, including Chalcogenide, Electrical conductor, Non-volatile memory and Memory cell.
His Non-volatile memory study integrates concerns from other disciplines, such as Semiconductor memory and Flash memory. His study looks at the intersection of Optoelectronics and topics like Bipolar junction transistor with Common emitter. His Phase-change material study incorporates themes from Layer, Composite material, Nanotechnology, Chromatography and Current.
Phase-change memory, Optoelectronics, Phase-change material, Electronic engineering and Amorphous solid are his primary areas of study. The study incorporates disciplines such as Joule heating, Void, Computer data storage and Voltage in addition to Phase-change memory. His work deals with themes such as Layer, Capacitor and Threshold voltage, which intersect with Optoelectronics.
The Phase-change material study combines topics in areas such as Electrical conductor, Noise reduction and Nitride. Chung H. Lam integrates several fields in his works, including Electronic engineering and Scalability. His Amorphous solid research is multidisciplinary, incorporating elements of Condensed matter physics and Electrical resistivity and conductivity.
His scientific interests lie mostly in Phase-change memory, Electronic engineering, Optoelectronics, Phase-change material and Neuromorphic engineering. His research in Phase-change memory intersects with topics in Seebeck coefficient, Electrical resistivity and conductivity, Thermoelectric materials, Amorphous solid and Condensed matter physics. His Electronic engineering research incorporates themes from Compensation and Topology.
His Optoelectronics research includes themes of Electrical conductor, Noise reduction and Nitride. His Phase-change material research integrates issues from Joule heating, Void, Electromigration and Nanostructure. His Neuromorphic engineering research is multidisciplinary, incorporating perspectives in Amorphous phase, Electrical engineering, Resistance drift and Reliability.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Phase-change random access memory: a scalable technology
S. Raoux;G. W. Burr;M. J. Breitwisch;C. T. Rettner.
Ibm Journal of Research and Development (2008)
Phase change memory technology
Geoffrey W. Burr;Matthew J. Breitwisch;Michele Franceschini;Davide Garetto.
Journal of Vacuum Science & Technology B (2010)
Overview of candidate device technologies for storage-class memory
G. W. Burr;B. N. Kurdi;J. C. Scott;C. H. Lam.
Ibm Journal of Research and Development (2008)
Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
T. Nirschl;J.B. Phipp;T.D. Happ;G.W. Burr.
international electron devices meeting (2007)
Recent Progress in Phase-Change Memory Technology
Geoffrey W. Burr;Matthew J. BrightSky;Abu Sebastian;Huai-Yu Cheng.
IEEE Journal on Emerging and Selected Topics in Circuits and Systems (2016)
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array
Sukru Burc Eryilmaz;Duygu Kuzum;Rakesh Gnana David Jeyasingh;SangBum Kim.
Frontiers in Neuroscience (2014)
Nanoscale electronic synapses using phase change devices
Bryan L. Jackson;Bipin Rajendran;Gregory S. Corrado;Matthew Breitwisch.
ACM Journal on Emerging Technologies in Computing Systems (2013)
Drift-Tolerant Multilevel Phase-Change Memory
N. Papandreou;H. Pozidis;T. Mittelholzer;G. F. Close.
international memory workshop (2011)
Novel Lithography-Independent Pore Phase Change Memory
M. Breitwisch;T. Nirschl;C.F. Chen;Y. Zhu.
symposium on vlsi technology (2007)
Method of making integrated circuit (IC) including at least one storage cell
David V. Horak;Chung H. Lam;Hon-Sum P. Wong.
(2008)
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