World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
10210
World Ranking
3664
National Ranking
114

Sang-Bum Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sang-Bum Kim sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 239 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sang-Bum Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sang-Bum Kim sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sang-Bum Kim is affiliated with Seoul National University in South Korea. Their research primarily focuses on engineering, with a specialization in electrical and electronic engineering. Their work intersects several related subfields including artificial intelligence, materials chemistry, surgery, and polymers and plastics.

The main topics of research that Sang-Bum Kim has contributed to include:

  • Advanced Memory and Neural Computing
  • Neural Networks and Reservoir Computing
  • Ferroelectric and Negative Capacitance Devices
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Neural dynamics and brain function
  • Phase-change materials and chalcogenides

Frequent co-authors in their publications are:

  • Jaehyeon Kang
  • Joon Young Kwak
  • YeonJoo Jeong
  • Jongun Won
  • Minseung Kang

Sang-Bum Kim has published extensively in several venues. Common publication venues include:

  • arXiv (Cornell University)
  • Polymer Korea
  • Journal of the Korean Institute of Rural Architecture
  • Advanced Science
  • Advanced Electronic Materials

Recent papers authored or co-authored by Sang-Bum Kim cover a range of topics in neuromorphic computing and materials science. Notable examples are:

  • "Competing memristors for brain-inspired computing," published in 2020 in iScience
  • "Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing," published in 2022 in Nature Communications
  • "Nanofiber Channel Organic Electrochemical Transistors for Low-Power Neuromorphic Computing and Wide-Bandwidth Sensing Platforms," published in 2021 in Advanced Science
  • "Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM," published in 2022 in Nano Energy
  • "Catalyze Materials Science with Machine Learning," published in 2021 in ACS Materials Letters

Best Publications

  • Phase Change Memory

    H P Wong;S Raoux;S Kim;J Liang

  • Neuromorphic computing using non-volatile memory

    Geoffrey W. Burr;Robert M. Shelby;Abu Sebastian;Sangbum Kim

  • Recent Progress in Phase-Change Memory Technology

    Geoffrey W. Burr;Matthew J. BrightSky;Abu Sebastian;Huai-Yu Cheng

  • Tutorial: Brain-inspired computing using phase-change memory devices

    Abu Sebastian;Manuel Le Gallo;Geoffrey W. Burr;Sangbum Kim

  • Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

    Sukru Burc Eryilmaz;Duygu Kuzum;Rakesh Gnana David Jeyasingh;SangBum Kim

  • NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning

    S. Kim;M. Ishii;S. Lewis;T. Perri

  • Terminal in wireless communication system and method thereof

    Kim Soeng-Hun;Kim Sang-Bum;Jang Jae-Hyuk;Jeong Kyeong-In

  • Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

    J.P. Reifenberg;Kuo-Wei Chang;M.A. Panzer;Sangbum Kim

  • Method and apparatus for transmitting/receiving data on multiple carriers in mobile communication system

    Soeng Hun Kim;Sang Bum Kim;Jae Hyuk Jang;Kyeong In Jeong

  • Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses

    Sun Gil Kim;Quyet Van Le;Ji Su Han;Hyojung Kim

  • Competing memristors for brain-inspired computing.

    Seung Ju Kim;Sang Bum Kim;Ho Won Jang

  • Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals

    Jaeho Lee;Elah Bozorg-Grayeli;SangBum Kim;Mehdi Asheghi

  • METHOD AND APPARATUS FOR TRANSMISSION DATA IN WIRELESS COMMUNICATION NETWORK SYSTEM

    Lim Chae Gwon;Cho Song Yean;Choi Sung Ho;Bae Beom Sik

  • Method and apparatus for identifying downlink message responsive in mobile communication system

    Bum Kim Sang;In Jeong Kyeong;Hun Kim Soeng

  • Self-Healing of a Confined Phase Change Memory Device with a Metallic Surfactant Layer

    Yujun Xie;W. Kim;Y. Kim;S. Kim

  • METHOD AND APPARATUS FOR WIRELESS COMMUNICATION IN WIRELESS COMMUNICATION SYSTEM SUPPORTING CARRIER AGGREGATION

    Kim Soeng Hun;Kim Sang Bum;Jang Jae Hyuk;Jeong Kyeong In

  • Method and apparatus for supporting discontinuous reception operation in mobile communication system

    Sang-Bum Kim;Sung-Ho Choi;Soeng-Hun Kim;Kyeong-In Jeong

  • Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

    SangBum Kim;Byoungil Lee;Mehdi Asheghi;Fred Hurkx

  • Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)

    Martin M. Frank;SangBum Kim;Stephen L. Brown;John Bruley

  • Pouch type secondary battery with improved reinforcement structure

    Han Won Cheol;Jang Yun Han;Kim Chang Ho;Kim Sang Beom

  • Method and device for transmitting and receiving data in mobile communication system

    Soeng Hun Kim;Gert Jan Van Lieshout;Sang Bum Kim;Kyeong In Jeong

Frequent Co-Authors

Soeng-Hun Kim
Soeng-Hun Kim Samsung (South Korea)
Kyeong-In Jeong
Kyeong-In Jeong Samsung (South Korea)
Gert Jan Van Lieshout
Gert Jan Van Lieshout Samsung (South Korea)
Chung H. Lam
Chung H. Lam IBM (United States)
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Kenneth E. Goodson
Kenneth E. Goodson Stanford University
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Mehdi Asheghi
Mehdi Asheghi Stanford University
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Simone Raoux
Simone Raoux Helmholtz-Zentrum Berlin für Materialien und Energie

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Related Online Degrees & Career Pathways

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