World's Best Scientists 2026 revealed!
Siva G. Narendra

Siva G. Narendra

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
13858
World Ranking
1740
National Ranking
697

Siva G. Narendra publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Siva G. Narendra sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 201 publications — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Siva G. Narendra D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Siva G. Narendra sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Operating system
  • Transistor

His scientific interests lie mostly in Electronic engineering, Electrical engineering, CMOS, Leakage and Voltage. His study in Electronic engineering is interdisciplinary in nature, drawing from both Electronic circuit, Chip, Low-power electronics, Transistor and Biasing. His work on Subthreshold conduction, Buck converter, Ćuk converter and Buck–boost converter as part of general Electrical engineering study is frequently connected to Chemistry, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

He works in the field of CMOS, namely Semiconductor device modeling. His Leakage research incorporates elements of Leakage power, Capacitance probe, Optoelectronics, Gate dielectric and Gate oxide. His Voltage research is multidisciplinary, relying on both Microprocessor and Semiconductor.

His most cited work include:

  • Parameter variations and impact on circuits and microarchitecture (1309 citations)
  • Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage (726 citations)
  • System and method for securing financial transactions (340 citations)

What are the main themes of his work throughout his whole career to date?

Siva G. Narendra mainly investigates Electrical engineering, Electronic engineering, Computer hardware, Mobile device and Card reader. His study in Electrical engineering focuses on Voltage, Transistor, Leakage and Biasing. Siva G. Narendra is involved in the study of Electronic engineering that focuses on CMOS in particular.

Siva G. Narendra works mostly in the field of CMOS, limiting it down to concerns involving Low-power electronics and, occasionally, AC power. The various areas that Siva G. Narendra examines in his Mobile device study include Computer security, Computer network and Encryption. His work in Card reader addresses issues such as Smart card, which are connected to fields such as Controller.

He most often published in these fields:

  • Electrical engineering (38.00%)
  • Electronic engineering (27.20%)
  • Computer hardware (18.80%)

What were the highlights of his more recent work (between 2013-2021)?

  • Computer hardware (18.80%)
  • Mobile device (16.40%)
  • Computer security (9.60%)

In recent papers he was focusing on the following fields of study:

Siva G. Narendra mainly focuses on Computer hardware, Mobile device, Computer security, Electrical engineering and Card reader. Siva G. Narendra combines subjects such as EMI, Electromagnetic interference, Transaction account, Optoelectronics and Encryption with his study of Mobile device. Siva G. Narendra works mostly in the field of Computer security, limiting it down to topics relating to Digital identity and, in certain cases, Fingerprint, World Wide Web and Access control, as a part of the same area of interest.

In his articles, Siva G. Narendra combines various disciplines, including Electrical engineering and Conductor. His work carried out in the field of Card reader brings together such families of science as Controller, Subscriber identity module, Smart card and Host. His research integrates issues of Electronic engineering and Lightning in his study of Printed circuit board.

Between 2013 and 2021, his most popular works were:

  • Visible Emission Line Coronagraph on Aditya-L1 (23 citations)
  • Mobile remote deposit capture (3 citations)
  • Token based multifactor authentication (2 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Operating system
  • Transistor

The scientist’s investigation covers issues in Computer security, Computer hardware, Mobile device, Authentication and Encryption. In his study, World Wide Web, Cloud computing, Fingerprint and Access control is strongly linked to Digital identity, which falls under the umbrella field of Computer security. His Computer hardware study combines topics from a wide range of disciplines, such as Controller and Integrated circuit.

His work investigates the relationship between Mobile device and topics such as Generator that intersect with problems in Communication source. His Authentication study integrates concerns from other disciplines, such as Cryptocurrency, Radio Link Protocol, Blockchain, The Internet and Hardware security module. His research integrates issues of Cryptography and Digital signature in his study of Encryption.

Best Publications

  • Parameter variations and impact on circuits and microarchitecture

    Shekhar Borkar;Tanay Karnik;Siva Narendra;Jim Tschanz

  • Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

    J.W. Tschanz;J.T. Kao;S.G. Narendra;R. Nair

  • MOBILE PHONE WITH MAGNETIC CARD EMULATION

    Narendra Siva G;Spitzer Thomas N;Tadepalli Prabhakar

  • System and method for securing financial transactions

    Thomas N. Spitzer;Prabhakar Tadepalli;Siva G. Narendra

  • Scaling of stack effect and its application for leakage reduction

    S. Narendra;S. Borkar;V. De;D. Antoniadis

  • Dynamic-sleep transistor and body bias for active leakage power control of microprocessors

    J.W. Tschanz;S.G. Narendra;Y. Ye;B.A. Bloechel

  • A 233-MHz 80%-87% efficient four-phase DC-DC converter utilizing air-core inductors on package

    P. Hazucha;G. Schrom;Jaehong Hahn;B.A. Bloechel

  • Subthreshold leakage modeling and reduction techniques

    James Kao;Siva Narendra;Anantha Chandrakasan

  • Comparative delay and energy of single edge-triggered and dual edge-triggered pulsed flip-flops for high-performance microprocessors

    James Tschanz;Siva Narendra;Zhanping Chen;Shekhar Borkar

  • Leakage in Nanometer CMOS Technologies

    Siva G. Narendra;Anantha P. Chandrakasan

  • MTCMOS hierarchical sizing based on mutual exclusive discharge patterns

    James Kao;Siva Narendra;Anantha Chandrakasan

  • Adaptive Frequency and Biasing Techniques for Tolerance to Dynamic Temperature-Voltage Variations and Aging

    J. Tschanz;Nam Sung Kim;S. Dighe;J. Howard

  • Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs

    A. Keshavarzi;S. Ma;S. Narendra;B. Bloechel

  • Multiple well transistor circuits having forward body bias

    Vivek K. De;Ali Keshavarzi;Siva G. Narendra;Shekhar Y. Borkar

  • Measurements and analysis of SER-tolerant latch in a 90-nm dual-V/sub T/ CMOS process

    P. Hazucha;T. Karnik;S. Walstra;B.A. Bloechel

  • Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors

    J.W. Tschanz;S. Narendra;R. Nair;V. De

  • Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-/spl mu/m CMOS

    S. Narendra;V. De;S. Borkar;D.A. Antoniadis

  • Forward body bias for microprocessors in 130-nm technology generation and beyond

    S. Narendra;A. Keshavarzi;B.A. Bloechel;S. Borkar

  • Low-voltage-swing monolithic dc-dc conversion

    V. Kursun;S.G. Narendra;V.K. De;E.G. Friedman

  • A 480-MHz, multi-phase interleaved buck DC-DC converter with hysteretic control

    G. Schrom;P. Hazucha;J. Hahn;D.S. Gardner

  • Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage

    James Tschanz;James Kao;Siva Narendra;Raj Nair

Frequent Co-Authors

Vivek De
Vivek De Intel (United States)
James W. Tschanz
James W. Tschanz Intel (United States)
Ali Keshavarzi
Ali Keshavarzi Stanford University
Shekhar Borkar
Shekhar Borkar Qualcomm (United States)
Tanay Karnik
Tanay Karnik Intel (United States)
Volkan Kursun
Volkan Kursun Bilkent University
Donald S. Gardner
Donald S. Gardner Intel (United States)
Eby G. Friedman
Eby G. Friedman University of Rochester
Dinesh Somasekhar
Dinesh Somasekhar Intel (United States)

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