World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
8036
World Ranking
4071
National Ranking
1458

Ali Keshavarzi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ali Keshavarzi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 132 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ali Keshavarzi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ali Keshavarzi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2021 - IEEE Fellow For contributions to low-power circuits and devices in scaled CMOS technologies

Overview

Ali Keshavarzi is affiliated with Stanford University in the United States. Their research primarily focuses on environmental science, with a significant concentration in environmental engineering, soil science, artificial intelligence applications, management and policy related to the environment, and ecology.

The scientist's main topics of study include:

  • Soil Geostatistics and Mapping
  • Geochemistry and Geologic Mapping
  • Soil and Land Suitability Analysis
  • Soil erosion and sediment transport
  • Soil Carbon and Nitrogen Dynamics
  • Soil and Unsaturated Flow
  • Remote Sensing in Agriculture

Frequent publication venues for their work are:

  • CATENA
  • Geoderma Regional
  • Land
  • SSRN Electronic Journal
  • Environmental Geochemistry and Health

Coauthors who have regularly collaborated with Ali Keshavarzi include:

  • Fuat Kaya
  • Jesús Rodrigo-Comino
  • Vinod Kumar
  • Rosa Francaviglia
  • Levent Başayığıt

Notable recent papers authored or coauthored by the scientist include:

  • Ecological risk assessment and source apportionment of heavy metals contamination: an appraisal based on the Tellus soil survey (2021), Environmental Geochemistry and Health
  • Assessing Machine Learning-Based Prediction under Different Agricultural Practices for Digital Mapping of Soil Organic Carbon and Available Phosphorus (2022), Agriculture
  • Combination of MIR spectroscopy and environmental covariates to predict soil organic carbon in a semi-arid region (2020), CATENA
  • Using fuzzy-AHP and parametric technique to assess soil fertility status in Northeast of Iran (2020), Journal of Mountain Science
  • Machine learning for cation exchange capacity prediction in different land uses (2022), CATENA

Ali Keshavarzi's work integrates advanced techniques from artificial intelligence to enhance environmental and soil science investigations. This interdisciplinary approach reflects an emphasis on applying digital tools and machine learning to address soil properties and contamination issues.

An award linked with their career is the IEEE Fellow distinction granted in 2021, recognizing contributions to low-power circuits and devices in scaled CMOS technologies.

Best Publications

  • Parameter variations and impact on circuits and microarchitecture

    Shekhar Borkar;Tanay Karnik;Siva Narendra;Jim Tschanz

  • The future of ferroelectric field-effect transistor technology

    Asif Islam Khan;Ali Keshavarzi;Suman Datta

  • Floating-body dynamic random access memory and method of fabrication in tri-gate technology

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Intrinsic leakage in low power deep submicron CMOS ICs

    A. Keshavarzi;K. Roy;C.F. Hawkins

  • Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs

    A. Keshavarzi;S. Ma;S. Narendra;B. Bloechel

  • Multiple well transistor circuits having forward body bias

    Vivek K. De;Ali Keshavarzi;Siva G. Narendra;Shekhar Y. Borkar

  • Differential circuits employing forward body bias

    Krishnamurthy Soumyanath;Ali Keshavarzi;Vivek K. De;Shekhar Y. Borkar

  • Forward body bias for microprocessors in 130-nm technology generation and beyond

    S. Narendra;A. Keshavarzi;B.A. Bloechel;S. Borkar

  • Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS IC's

    A. Keshavarzi;S. Narendra;S. Borkar;C. Hawkins

  • Circuit including forward body bias from supply voltage and ground nodes

    Vivek K. De;Ali Keshavarzi;Siva G. Narendra;Shekhar Y. Borkar

  • Floating-body memory cell write

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Software control of transistor body bias in controlling chip parameters

    Shekhar Y. Borkar;Vivek K. De;Ali Keshavarzi;Siva G. Narendra

  • Floating-body dram using write word line for increased retention time

    Stephen Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Ultra-low voltage circuits and processor in 180nm to 90nm technologies with a swapped-body biasing technique

    S. Narendra;J. Tschanz;J. Hofsheier;B. Bloechel

  • OTP antifuse cell and cell array

    Fabrice Paillet;Ali Keshavarzi;Muhammad M. Khellah;Dinesh Somasekhar

  • Floating-body dynamic random access memory with purge line

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Method and apparatus to generate a reference value in a memory array

    Dinesh Somasekhar;Yibin Ye;Muhammad M. Khellah;Fabrice Paillet

  • Purge-based floating body memory

    Ali Keshavarzi;Stephen H Tang;Dinesh Somasekhar;Fabrice Paillet

  • Floating-body DRAM with two-phase write

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • 2 GHz 2 Mb 2T Gain Cell Memory Macro With 128 GBytes/sec Bandwidth in a 65 nm Logic Process Technology

    D. Somasekhar;Yibin Ye;P. Aseron;Shih-Lien Lu

  • Dual-V/sub T/ SRAM cells with full-swing single-ended bit line sensing for high-performance on-chip cache in 0.13 /spl mu/m technology generation

    Fatih Hamzaoglu;Yibin Te;Ali Keshavarzi;Kevin Zhang

Frequent Co-Authors

Vivek De
Vivek De Intel (United States)
Dinesh Somasekhar
Dinesh Somasekhar Intel (United States)
Siva G. Narendra
Siva G. Narendra Tyfone, Inc.
Muhammad M. Khellah
Muhammad M. Khellah Intel (United States)
Shekhar Borkar
Shekhar Borkar Qualcomm (United States)
Shih-Lien Lu
Shih-Lien Lu Washington State University
Tanay Karnik
Tanay Karnik Intel (United States)
Manoj Sachdev
Manoj Sachdev University of Waterloo
Kaushik Roy
Kaushik Roy Purdue University West Lafayette
Arijit Raychowdhury
Arijit Raychowdhury Georgia Institute of Technology

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