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Muhammad M. Khellah

Muhammad M. Khellah

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5352 5138 1849 1725 183 5322

Muhammad M. Khellah publications per year

The chart shows the history of publications by Muhammad M. Khellah between 1994 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Muhammad M. Khellah published across 30 years, from 1994 to 2023, averaging 6.6 papers a year. Output peaked at 19 publications in 2005. 1 of the 199 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1994 to 2023. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2005. 1994: 1 publication 1995: 0 publications 1996: 2 publications 1997: 0 publications 1998: 4 publications 1999: 2 publications 2000: 0 publications 2001: 1 publication 2002: 7 publications 2003: 5 publications 2004: 13 publications 2005: 19 publications 2006: 13 publications 2007: 7 publications 2008: 11 publications 2009: 11 publications 2010: 9 publications 2011: 5 publications 2012: 6 publications 2013: 5 publications 2014: 7 publications 2015: 8 publications 2016: 11 publications 2017: 9 publications 2018: 8 publications 2019: 12 publications 2020: 12 publications 2021: 10 publications 2022: 0 publications 2023: 1 publication
1994 2023

199 publications in total across all disciplines

View publications per year as a table
Muhammad M. Khellah: publications per year, 1994 to 2023
Year Publications
1994 1
1995 0
1996 2
1997 0
1998 4
1999 2
2000 0
2001 1
2002 7
2003 5
2004 13
2005 19
2006 13
2007 7
2008 11
2009 11
2010 9
2011 5
2012 6
2013 5
2014 7
2015 8
2016 11
2017 9
2018 8
2019 12
2020 12
2021 10
2022 0
2023 1
Total 199
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Muhammad M. Khellah publications per year - data summary

  • Muhammad M. Khellah, a Electronics and Electrical Engineering scholar from Intel (United States), has 199 publications recorded across 30 years, from 1994 to 2023.
  • The oldest publication on record dates to 1994 and the most recent to 2023.
  • The most productive year is 2005, with 19 publications.
  • The least productive years with any output are 1994, 2001 and 2023, with 1 publication each.
  • 4 of the 30 years in the span carry no publications at all (1995, 1997, 2000 and 2022).
  • The rate of publication averages 6.6 papers per year over the whole span, or 7.7 per year counting only the 26 years with at least one publication.
  • The last 5 years on the chart (2019-2023) hold 35 publications, 18% of the career total.
  • Split into equal eras - 1994-2003: 22 publications (2.2 per year); 2004-2013: 99 publications (9.9 per year); 2014-2023: 78 publications (7.8 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Muhammad M. Khellah publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Muhammad M. Khellah sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 174–193 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 183 publications — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445 183
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Muhammad M. Khellah publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Muhammad M. Khellah, a Electronics and Electrical Engineering scholar from Intel (United States), records 183 publications - the 24th percentile of the discipline.
  • 24% of ranked Electronics and Electrical Engineering scientists score the same or lower than Muhammad M. Khellah, and about 76% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Muhammad M. Khellah ranks below the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Muhammad M. Khellah D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Muhammad M. Khellah sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Muhammad M. Khellah D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Muhammad M. Khellah, a Electronics and Electrical Engineering scholar from Intel (United States), records 36 D-Index - the 24th percentile of the discipline.
  • 24% of ranked Electronics and Electrical Engineering scientists score the same or lower than Muhammad M. Khellah, and about 76% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Muhammad M. Khellah ranks below the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Overview

Muhammad M. Khellah is affiliated with Intel in the United States. Their research primarily spans the fields of engineering and computer science, with a focus on electrical and electronic engineering, hardware and architecture, and computer networks and communications.

The scientist's work covers a range of topics related to semiconductor materials and devices, parallel computing and optimization techniques, advanced data storage technologies, advanced memory and neural computing, low-power high-performance VLSI design, electrostatic discharge in electronics, and radiation effects in electronics.

Recent papers authored or co-authored by Muhammad M. Khellah include:

  • Advances in Microprocessor Cache Architectures Over the Last 25 Years, 2021, IEEE Micro
  • An All-Digital, VMAX-Compliant, Stable, and Scalable Distributed Charge Injection Scheme in 10-nm CMOS for Fast and Local Mitigation of Voltage Droop, 2020, IEEE Journal of Solid-State Circuits
  • A Back-Sampling Chain Technique for Accelerated Detection, Characterization, and Reconstruction of Radiation-Induced Transient Pulses, 2021, IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Their frequent co-authors include:

  • Vivek De
  • Minki Cho
  • Andres Malavasi
  • James Tschanz
  • Ravi Iyer

Muhammad M. Khellah publishes regularly in several scholarly venues, notably:

  • IEEE Micro
  • IEEE Journal of Solid-State Circuits
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Best Publications

  • Trading off Cache Capacity for Reliability to Enable Low Voltage Operation

    Chris Wilkerson;Hongliang Gao;Alaa R. Alameldeen;Zeshan Chishti

  • A 45 nm Resilient Microprocessor Core for Dynamic Variation Tolerance

    K A Bowman;J W Tschanz;S L Lu;P A Aseron

  • Floating-body dynamic random access memory and method of fabrication in tri-gate technology

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Wordline & Bitline Pulsing Schemes for Improving SRAM Cell Stability in Low-Vcc 65nm CMOS Designs

    M. Khellah;Y. Ye;N. Kim;D. Somasekhar

  • Floating-body memory cell write

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process

    D. Somasekhar;B. Srinivasan;G. Pandya;F. Hamzaoglu

  • Floating-body dram using write word line for increased retention time

    Stephen Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • OTP antifuse cell and cell array

    Fabrice Paillet;Ali Keshavarzi;Muhammad M. Khellah;Dinesh Somasekhar

  • Floating-body dynamic random access memory with purge line

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • Method and apparatus to generate a reference value in a memory array

    Dinesh Somasekhar;Yibin Ye;Muhammad M. Khellah;Fabrice Paillet

  • Purge-based floating body memory

    Ali Keshavarzi;Stephen H Tang;Dinesh Somasekhar;Fabrice Paillet

  • A 0.45–1 V Fully-Integrated Distributed Switched Capacitor DC-DC Converter With High Density MIM Capacitor in 22 nm Tri-Gate CMOS

    Rinkle Jain;Bibiche M. Geuskens;Stephen T. Kim;Muhammad M. Khellah

  • Floating-body DRAM with two-phase write

    Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet

  • 2 GHz 2 Mb 2T Gain Cell Memory Macro With 128 GBytes/sec Bandwidth in a 65 nm Logic Process Technology

    D. Somasekhar;Yibin Ye;P. Aseron;Shih-Lien Lu

  • Accurate Estimation of SRAM Dynamic Stability

    D.E. Khalil;M. Khellah;Nam-Sung Kim;Y. Ismail

  • Serial-Link Bus: A Low-Power On-Chip Bus Architecture

    M. Ghoneima;Y. Ismail;M.M. Khellah;J. Tschanz

  • SRAM array with dynamic voltage for reducing active leakage power

    Muhammad Khellah;Vivek De;Dinesh Somasekhar;Yibin Ye

  • Formal derivation of optimal active shielding for low-power on-chip buses

    M. Ghoneima;Y.I. Ismail;M.M. Khellah;J.W. Tschanz

  • Enabling Wide Autonomous DVFS in a 22 nm Graphics Execution Core Using a Digitally Controlled Fully Integrated Voltage Regulator

    Stephen T. Kim;Yi-Chun Shih;Kaushik Mazumdar;Rinkle Jain

  • PVT-and-aging adaptive wordline boosting for 8T SRAM power reduction

    Arijit Raychowdhury;Bibiche Geuskens;Jaydeep Kulkarni;Jim Tschanz

  • A 45nm resilient and adaptive microprocessor core for dynamic variation tolerance

    James Tschanz;Keith Bowman;Shih-Lien Lu;Paolo Aseron

Frequent Co-Authors

Vivek De
Vivek De Intel (United States)
James W. Tschanz
James W. Tschanz Intel (United States)
Dinesh Somasekhar
Dinesh Somasekhar Intel (United States)
Tanay Karnik
Tanay Karnik Intel (United States)
Ali Keshavarzi
Ali Keshavarzi Stanford University
Shih-Lien Lu
Shih-Lien Lu Washington State University
Yehea Ismail
Yehea Ismail American University in Cairo
Nam Sung Kim
Nam Sung Kim University of Illinois at Urbana-Champaign
Arijit Raychowdhury
Arijit Raychowdhury Georgia Institute of Technology
Keith Bowman
Keith Bowman Qualcomm (United States)

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