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James W. Tschanz

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 50 2754 2639 1050 979 238 12652

James W. Tschanz publications per year

The chart shows the history of publications by James W. Tschanz between 1999 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. James W. Tschanz published across 27 years, from 1999 to 2025, averaging 9.2 papers a year. Output peaked at 22 publications in 2004. 9 of the 248 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1999 to 2025. Vertical axis: number of publications, 0 to 22. Peak 22 publications in 2004. 1999: 1 publication 2000: 4 publications 2001: 7 publications 2002: 11 publications 2003: 11 publications 2004: 22 publications 2005: 11 publications 2006: 8 publications 2007: 9 publications 2008: 11 publications 2009: 7 publications 2010: 12 publications 2011: 9 publications 2012: 9 publications 2013: 11 publications 2014: 12 publications 2015: 12 publications 2016: 12 publications 2017: 10 publications 2018: 5 publications 2019: 12 publications 2020: 13 publications 2021: 9 publications 2022: 6 publications 2023: 5 publications 2024: 5 publications 2025: 4 publications
1999 2025

248 publications in total across all disciplines

View publications per year as a table
James W. Tschanz: publications per year, 1999 to 2025
Year Publications
1999 1
2000 4
2001 7
2002 11
2003 11
2004 22
2005 11
2006 8
2007 9
2008 11
2009 7
2010 12
2011 9
2012 9
2013 11
2014 12
2015 12
2016 12
2017 10
2018 5
2019 12
2020 13
2021 9
2022 6
2023 5
2024 5
2025 4
Total 248
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James W. Tschanz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James W. Tschanz sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 238 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 238
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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James W. Tschanz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James W. Tschanz sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 50 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141 50
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

James W. Tschanz is affiliated with Intel in the United States, contributing primarily to the field of Engineering with a focus on Electrical and Electronic Engineering. Their research interests extend to related subfields, including Biomedical Engineering, Hardware and Architecture, and Computer Networks and Communications.

Their work covers a range of main topics, such as:

  • Low-power high-performance VLSI design
  • Advancements in Semiconductor Devices and Circuit Design
  • Analog and Mixed-Signal Circuit Design
  • Semiconductor materials and devices
  • Advanced DC-DC Converters
  • Silicon Carbide Semiconductor Technologies
  • Advanced Memory and Neural Computing

James W. Tschanz has published extensively, with notable papers including:

  • A Variation-Adaptive Integrated Computational Digital LDO in 22-nm CMOS With Fast Transient Response, 2020, IEEE Journal of Solid-State Circuits
  • A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors, 2022, IEEE Journal of Solid-State Circuits
  • A Universal Modular Hybrid LDO With Fast Load Transient Response and Programmable PSRR in 14-nm CMOS Featuring Dynamic Clamp Strength Tuning, 2021, IEEE Journal of Solid-State Circuits
  • A 0.76V Vin Triode Region 4A Analog LDO with Distributed Gain Enhancement and Dynamic Load-Current Tracking in Intel 4 CMOS Featuring Active Feedforward Ripple Shaping and On-Chip Power Noise Analyzer, 2022, 2022 IEEE International Solid- State Circuits Conference (ISSCC)
  • Wide-Range Many-Core SoC Design in Scaled CMOS: Challenges and Opportunities, 2021, IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Their frequent coauthors include:

  • Vivek De
  • Harish K. Krishnamurthy
  • Krishnan Ravichandran
  • Sheldon Weng
  • Xiaosen Liu

James W. Tschanz's research has predominantly appeared in a core group of publication venues:

  • IEEE Journal of Solid-State Circuits
  • IEEE Solid-State Circuits Letters
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
  • 2022 IEEE International Solid- State Circuits Conference (ISSCC)

Best Publications

  • Parameter variations and impact on circuits and microarchitecture

    Shekhar Borkar;Tanay Karnik;Siva Narendra;Jim Tschanz

  • Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

    J.W. Tschanz;J.T. Kao;S.G. Narendra;R. Nair

  • An 80-Tile Sub-100-W TeraFLOPS Processor in 65-nm CMOS

    Sriram R. Vangal;Jason Howard;Gregory Ruhl;Saurabh Dighe

  • An 80-Tile 1.28TFLOPS Network-on-Chip in 65nm CMOS

    Unknown

  • Dynamic-sleep transistor and body bias for active leakage power control of microprocessors

    J.W. Tschanz;S.G. Narendra;Y. Ye;B.A. Bloechel

  • Energy-Efficient and Metastability-Immune Resilient Circuits for Dynamic Variation Tolerance

    Keith A. Bowman;James W. Tschanz;Nam Sung Kim;Janice C. Lee

  • Comparative delay and energy of single edge-triggered and dual edge-triggered pulsed flip-flops for high-performance microprocessors

    James Tschanz;Siva Narendra;Zhanping Chen;Shekhar Borkar

  • A 45 nm Resilient Microprocessor Core for Dynamic Variation Tolerance

    K A Bowman;J W Tschanz;S L Lu;P A Aseron

  • Adaptive Frequency and Biasing Techniques for Tolerance to Dynamic Temperature-Voltage Variations and Aging

    J. Tschanz;Nam Sung Kim;S. Dighe;J. Howard

  • Measurements and analysis of SER-tolerant latch in a 90-nm dual-V/sub T/ CMOS process

    P. Hazucha;T. Karnik;S. Walstra;B.A. Bloechel

  • Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0.25-/spl mu/m to 90-nm generation

    P. Hazucha;T. Karnik;J. Maiz;S. Walstra

  • Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors

    J.W. Tschanz;S. Narendra;R. Nair;V. De

  • Tunable replica circuits and adaptive voltage-frequency techniques for dynamic voltage, temperature, and aging variation tolerance

    James Tschanz;Keith Bowman;Steve Walstra;Marty Agostinelli

  • Within-Die Variation-Aware Dynamic-Voltage-Frequency-Scaling With Optimal Core Allocation and Thread Hopping for the 80-Core TeraFLOPS Processor

    S Dighe;S R Vangal;P Aseron;S Kumar

  • Circuit techniques for dynamic variation tolerance

    Keith Bowman;James Tschanz;Chris Wilkerson;Shih-Lien Lu

  • Total power optimization by simultaneous dual-Vt allocation and device sizing in high performance microprocessors

    Tanay Karnik;Yibin Ye;James Tschanz;Liqiong Wei

  • Temperature dependent regulation of threshold voltage

    James W. Tschanz;Mircea R. Stan;Siva G. Narendra;Vivek K. De

  • Ultra-low voltage circuits and processor in 180nm to 90nm technologies with a swapped-body biasing technique

    S. Narendra;J. Tschanz;J. Hofsheier;B. Bloechel

  • A 0.45–1 V Fully-Integrated Distributed Switched Capacitor DC-DC Converter With High Density MIM Capacitor in 22 nm Tri-Gate CMOS

    Rinkle Jain;Bibiche M. Geuskens;Stephen T. Kim;Muhammad M. Khellah

  • Adaptive body bias for clock skew compensation

    James W. Tschanz;Nasser Kurd;Siva G. Narendra;Javed Barkatullah

  • Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage

    James Tschanz;James Kao;Siva Narendra;Raj Nair

Frequent Co-Authors

Vivek De
Vivek De Intel (United States)
Muhammad M. Khellah
Muhammad M. Khellah Intel (United States)
Siva G. Narendra
Siva G. Narendra Tyfone, Inc.
Tanay Karnik
Tanay Karnik Intel (United States)
Keith Bowman
Keith Bowman Qualcomm (United States)
Arijit Raychowdhury
Arijit Raychowdhury Georgia Institute of Technology
Shih-Lien Lu
Shih-Lien Lu Washington State University
Dinesh Somasekhar
Dinesh Somasekhar Intel (United States)
Shekhar Borkar
Shekhar Borkar Qualcomm (United States)
Chris Wilkerson
Chris Wilkerson Nvidia (United Kingdom)

External Links

Personal website of James W. Tschanz Google Scholar page

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Publications: 44

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