D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 38 Citations 10,549 128 World Ranking 3020 National Ranking 1183

Research.com Recognitions

Awards & Achievements

2007 - IEEE Fellow For contributions to common metal oxide semiconductor technology for high-volume manufacturing

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

Scott E. Thompson spends much of his time researching Electrical engineering, Transistor, Optoelectronics, Electron mobility and Strained silicon. In general Electrical engineering study, his work on Integrated circuit often relates to the realm of Scaling, thereby connecting several areas of interest. His work in Transistor is not limited to one particular discipline; it also encompasses CMOS.

His biological study spans a wide range of topics, including PMOS logic and Gate oxide. His Electron mobility study combines topics from a wide range of disciplines, such as Effective mass and MOSFET. His Silicon study integrates concerns from other disciplines, such as Substrate and Nanoelectronics.

His most cited work include:

  • A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors (642 citations)
  • A 90-nm logic technology featuring strained-silicon (546 citations)
  • Uniaxial-process-induced strained-Si: extending the CMOS roadmap (494 citations)

What are the main themes of his work throughout his whole career to date?

Scott E. Thompson focuses on Optoelectronics, Electrical engineering, Transistor, MOSFET and Electronic engineering. His work in Optoelectronics addresses issues such as Gate oxide, which are connected to fields such as Gate dielectric. His research links Low-power electronics with Electrical engineering.

As part of the same scientific family, Scott E. Thompson usually focuses on Transistor, concentrating on CMOS and intersecting with Electronics. His studies in MOSFET integrate themes in fields like Stress, Condensed matter physics and Wafer. His Silicon research includes themes of Metal gate and Nanoelectronics.

He most often published in these fields:

  • Optoelectronics (57.14%)
  • Electrical engineering (37.59%)
  • Transistor (36.09%)

What were the highlights of his more recent work (between 2010-2019)?

  • Transistor (36.09%)
  • Optoelectronics (57.14%)
  • Doping (16.54%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Transistor, Optoelectronics, Doping, Electrical engineering and Electronic engineering. His Transistor research integrates issues from CMOS and Dopant. Scott E. Thompson interconnects Layer, Biasing and Drain-induced barrier lowering, Gate oxide in the investigation of issues within Optoelectronics.

His Electronic engineering research is multidisciplinary, incorporating elements of Semiconductor device, Discrete circuit and Integrated circuit. His Field-effect transistor study combines topics in areas such as Condensed matter physics, Silicon and MOSFET. His study explores the link between Condensed matter physics and topics such as Electrical resistivity and conductivity that cross with problems in Electron mobility.

Between 2010 and 2019, his most popular works were:

  • Advanced channel engineering achieving aggressive reduction of V T variation for ultra-low-power applications (67 citations)
  • Transistor with threshold voltage set notch and method of fabrication thereof (67 citations)
  • A highly integrated 65-nm SoC process with enhanced power/performance of digital and analog circuits (18 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

Scott E. Thompson mainly focuses on Transistor, Optoelectronics, Electrical engineering, Threshold voltage and CMOS. Borrowing concepts from Communication channel, Scott E. Thompson weaves in ideas under Transistor. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Electronic engineering.

All of his Electrical engineering and Static random-access memory and MOSFET investigations are sub-components of the entire Electrical engineering study. His research in MOSFET intersects with topics in PMOS logic, Digital electronics, Current mirror and Analogue electronics. His CMOS study incorporates themes from Nanoscopic scale and Electronics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

T. Ghani;M. Armstrong;C. Auth;M. Bost.
international electron devices meeting (2003)

957 Citations

A 90-nm logic technology featuring strained-silicon

S.E. Thompson;M. Armstrong;C. Auth;M. Alavi.
IEEE Transactions on Electron Devices (2004)

867 Citations

Moore's law: the future of Si microelectronics

Scott E. Thompson;Srivatsan Parthasarathy.
Materials Today (2006)

834 Citations

Uniaxial-process-induced strained-Si: extending the CMOS roadmap

S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida.
IEEE Transactions on Electron Devices (2006)

708 Citations

A logic nanotechnology featuring strained-silicon

S.E. Thompson;M. Armstrong;C. Auth;S. Cea.
IEEE Electron Device Letters (2004)

656 Citations

MOS Scaling: Transistor Challenges for the 21st Century

Scott Thompson.
(1998)

592 Citations

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

Y. Sun;S. E. Thompson;T. Nishida.
Journal of Applied Physics (2007)

574 Citations

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell

S. Thompson;N. Anand;M. Armstrong;C. Auth.
international electron devices meeting (2002)

429 Citations

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Min Chu;Yongke Sun;Umamaheswari Aghoram;Scott E. Thompson.
Annual Review of Materials Research (2009)

395 Citations

Strain effect in semiconductors : theory and device applications

Yongke Sun;Scott E. Thompson;Toshikazu Nishida.
(2010)

312 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Scott E. Thompson

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 50

Dureseti Chidambarrao

Dureseti Chidambarrao

IBM (United States)

Publications: 38

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 34

anthony j lochtefeld

anthony j lochtefeld

Taiwan Semiconductor Manufacturing Company (United States)

Publications: 33

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 32

Kangguo Cheng

Kangguo Cheng

IBM (United States)

Publications: 28

Kaushik Roy

Kaushik Roy

Purdue University West Lafayette

Publications: 28

Bruce B. Doris

Bruce B. Doris

IBM (United States)

Publications: 28

Ganesh S. Samudra

Ganesh S. Samudra

National University of Singapore

Publications: 25

Ram Krishnamurthy

Ram Krishnamurthy

Intel (United States)

Publications: 25

Dennis Sylvester

Dennis Sylvester

University of Michigan–Ann Arbor

Publications: 24

Matthew T. Currie

Matthew T. Currie

Morgan, Lewis & Bockius LLP

Publications: 24

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 23

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 23

Eugene A. Fitzgerald

Eugene A. Fitzgerald

MIT

Publications: 23

Geert Eneman

Geert Eneman

Imec

Publications: 22

Trending Scientists

Wan Kyun Chung

Wan Kyun Chung

Pohang University of Science and Technology

Nanfang Yu

Nanfang Yu

Columbia University

Jorma Keskinen

Jorma Keskinen

Tampere University

Neil R. Branda

Neil R. Branda

Simon Fraser University

Charles T. Rettner

Charles T. Rettner

IBM (United States)

Christoph Vorburger

Christoph Vorburger

Swiss Federal Institute of Aquatic Science and Technology

Dale Sanders

Dale Sanders

John Innes Centre

Oliver Nebel

Oliver Nebel

Monash University

William R. Pierson

William R. Pierson

Desert Research Institute

Anthony G. Barnston

Anthony G. Barnston

Columbia University

Michael J. Falkowski

Michael J. Falkowski

Colorado State University

Stephan Riek

Stephan Riek

University of Queensland

Philippe Kahane

Philippe Kahane

Grenoble Alpes University

Alan S. Maisel

Alan S. Maisel

University of California, San Diego

Hanneke C. Kluin-Nelemans

Hanneke C. Kluin-Nelemans

University Medical Center Groningen

Steen Hannestad

Steen Hannestad

Aarhus University

Something went wrong. Please try again later.