2007 - IEEE Fellow For contributions to common metal oxide semiconductor technology for high-volume manufacturing
Scott E. Thompson spends much of his time researching Electrical engineering, Transistor, Optoelectronics, Electron mobility and Strained silicon. In general Electrical engineering study, his work on Integrated circuit often relates to the realm of Scaling, thereby connecting several areas of interest. His work in Transistor is not limited to one particular discipline; it also encompasses CMOS.
His biological study spans a wide range of topics, including PMOS logic and Gate oxide. His Electron mobility study combines topics from a wide range of disciplines, such as Effective mass and MOSFET. His Silicon study integrates concerns from other disciplines, such as Substrate and Nanoelectronics.
Scott E. Thompson focuses on Optoelectronics, Electrical engineering, Transistor, MOSFET and Electronic engineering. His work in Optoelectronics addresses issues such as Gate oxide, which are connected to fields such as Gate dielectric. His research links Low-power electronics with Electrical engineering.
As part of the same scientific family, Scott E. Thompson usually focuses on Transistor, concentrating on CMOS and intersecting with Electronics. His studies in MOSFET integrate themes in fields like Stress, Condensed matter physics and Wafer. His Silicon research includes themes of Metal gate and Nanoelectronics.
His primary scientific interests are in Transistor, Optoelectronics, Doping, Electrical engineering and Electronic engineering. His Transistor research integrates issues from CMOS and Dopant. Scott E. Thompson interconnects Layer, Biasing and Drain-induced barrier lowering, Gate oxide in the investigation of issues within Optoelectronics.
His Electronic engineering research is multidisciplinary, incorporating elements of Semiconductor device, Discrete circuit and Integrated circuit. His Field-effect transistor study combines topics in areas such as Condensed matter physics, Silicon and MOSFET. His study explores the link between Condensed matter physics and topics such as Electrical resistivity and conductivity that cross with problems in Electron mobility.
Scott E. Thompson mainly focuses on Transistor, Optoelectronics, Electrical engineering, Threshold voltage and CMOS. Borrowing concepts from Communication channel, Scott E. Thompson weaves in ideas under Transistor. His study in Optoelectronics is interdisciplinary in nature, drawing from both Layer and Electronic engineering.
All of his Electrical engineering and Static random-access memory and MOSFET investigations are sub-components of the entire Electrical engineering study. His research in MOSFET intersects with topics in PMOS logic, Digital electronics, Current mirror and Analogue electronics. His CMOS study incorporates themes from Nanoscopic scale and Electronics.
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A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
T. Ghani;M. Armstrong;C. Auth;M. Bost.
international electron devices meeting (2003)
A 90-nm logic technology featuring strained-silicon
S.E. Thompson;M. Armstrong;C. Auth;M. Alavi.
IEEE Transactions on Electron Devices (2004)
Moore's law: the future of Si microelectronics
Scott E. Thompson;Srivatsan Parthasarathy.
Materials Today (2006)
Uniaxial-process-induced strained-Si: extending the CMOS roadmap
S.E. Thompson;Guangyu Sun;Youn Sung Choi;T. Nishida.
IEEE Transactions on Electron Devices (2006)
A logic nanotechnology featuring strained-silicon
S.E. Thompson;M. Armstrong;C. Auth;S. Cea.
IEEE Electron Device Letters (2004)
MOS Scaling: Transistor Challenges for the 21st Century
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
Y. Sun;S. E. Thompson;T. Nishida.
Journal of Applied Physics (2007)
A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell
S. Thompson;N. Anand;M. Armstrong;C. Auth.
international electron devices meeting (2002)
Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
Min Chu;Yongke Sun;Umamaheswari Aghoram;Scott E. Thompson.
Annual Review of Materials Research (2009)
Strain effect in semiconductors : theory and device applications
Yongke Sun;Scott E. Thompson;Toshikazu Nishida.
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