World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
6510
World Ranking
3619
National Ranking
60

Ganesh S. Samudra publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ganesh S. Samudra sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 323 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ganesh S. Samudra D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ganesh S. Samudra sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ganesh S. Samudra is affiliated with the National University of Singapore in Singapore, contributing to research at the intersection of computer science and medicine. Their work spans multiple subfields including Information Systems, Artificial Intelligence, and Pediatrics, Perinatology and Child Health.

The research output of Ganesh S. Samudra includes publications primarily in the domain of educational technology and public health. Their recent paper, published in 2025, is titled "Efektivitas Teknik SMOTE Dalam Meningkatkan Performa Naïve Bayes Deteksi Gangguan Kecemasan Mahasiswa" and appeared in JATISI (Jurnal Teknik Informatika dan Sistem Informasi). This work investigates machine learning techniques for improving performance in anxiety disorder detection among students.

The main fields of study covered by their research include:

  • Computer Science
  • Medicine

Within these broader fields, their subfields of specialization involve:

  • Information Systems
  • Artificial Intelligence
  • Pediatrics, Perinatology and Child Health

The primary topics of Ganesh S. Samudra's work focus on educational and health-related themes, notably:

  • Educational Methods and Media Use
  • Educational Technology Systems
  • Public Health and Nutrition

Collaboration with other researchers is evident through frequent co-authors, which include:

  • Budi Sugandi
  • Adilla Anggraeni
  • A Reza Baehaqa Jamroni
  • Ahmad Sarif
  • Wiyanto Wiyanto

Publications by Ganesh S. Samudra have appeared predominantly in venues such as:

  • JATISI (Jurnal Teknik Informatika dan Sistem Informasi)

The scope of their work reflects interdisciplinary connections, combining methodologies from computer science and artificial intelligence with applications in public health and pediatrics. This suggests an approach that integrates technology into educational and health system contexts.

Best Publications

  • Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

    Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo

  • Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric

    C. Shen;M.-F. Li;C. E. Foo;T. Yang

  • Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

    Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo

  • Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

    R.T.P. Lee;Tsung-Yang Liow;Kian-Ming Tan;A.E.-J. Lim

  • Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

    Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo

  • Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors

    Kah-Wee Ang;King-Jien Chui;Vladimir Bliznetsov;Chih-Hang Tung

  • Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

    Kah Wee Ang;King Jien Chui;V. Bliznetsov;Anyan Du

  • Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

    Huolin Huang;Yung C. Liang;Ganesh S. Samudra;Ting-Fu Chang

  • Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

    Eng-Huat Toh;Grace Huiqi Wang;Lap Chan;Ganesh Samudra

  • Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

    Peng-Fei Guo;Li-Tao Yang;Yue Yang;Lu Fan

  • Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

    Eng Huat Toh;Grace Huiqi Wang;Lap Chan;Dennis Sylvester

  • A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors

    Chen Shen;Sern-Long Ong;Chun-Huat Heng;G. Samudra

  • Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices

    Y.C. Liang;K.P. Gan;G.S. Samudra

  • Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices

    K.P. Gan;Y.C. Liang;G.S. Samudra;S.M. Xu

  • Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

    T.-Y. Liow;K.-M. Tan;R. Lee;A. Du

  • Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and Si3N4/SiO2 tunneling stack

    Y.Q. Wang;D.Y. Gao;W.S. Hwang;C. Shen

  • A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

    Kai-Tak Lam;Dawei Seah;Sai-Kong Chin;S Bala Kumar

  • Tungsten nanocrystals embedded in high-k materials for memory application

    S. K. Samanta;Won Jong Yoo;Ganesh Samudra;Eng Soon Tok

  • New insights into carrier transport in n-MOSFETs

    A. Lochtefeld;I. J. Djomehri;G. Samudra;D. A. Antoniadis

  • Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

    T. Yang;M.F. Li;C. Shen;C.H. Ang

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Yung C. Liang
Yung C. Liang National University of Singapore
Lap Chan
Lap Chan Independent Scientist / Consultant, Singapore
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Kah-Wee Ang
Kah-Wee Ang National University of Singapore
Ming-Fu Li
Ming-Fu Li Fudan University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Chun-Huat Heng
Chun-Huat Heng National University of Singapore
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research

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