Ganesh S. Samudra spends much of his time researching Optoelectronics, MOSFET, Electrical engineering, Field-effect transistor and Quantum tunnelling. He interconnects Transistor, Gate dielectric and Nanotechnology in the investigation of issues within Optoelectronics. The concepts of his MOSFET study are interwoven with issues in Electronic engineering, Passivation, Silicon and Dielectric.
As a member of one scientific family, he mostly works in the field of Silicon, focusing on Extrinsic semiconductor and, on occasion, Epitaxy. His work on Power MOSFET and High-κ dielectric as part of his general Electrical engineering study is frequently connected to Communication channel, thereby bridging the divide between different branches of science. His Field-effect transistor research is multidisciplinary, incorporating perspectives in Calculus of variations, Semiconductor device modeling and Poisson's equation.
Ganesh S. Samudra mainly investigates Optoelectronics, MOSFET, Silicon, Transistor and Electronic engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Nanotechnology, Electrical engineering and Epitaxy. His MOSFET research is multidisciplinary, relying on both Electron mobility, Breakdown voltage, Equivalent series resistance, Silicon on insulator and Gate dielectric.
As a part of the same scientific study, Ganesh S. Samudra usually deals with the Silicon, concentrating on Doping and frequently concerns with Wafer. His Transistor study combines topics in areas such as Impact ionization, Nanowire, Heterojunction, Wide-bandgap semiconductor and Band gap. His research integrates issues of Stress, Annealing and Electronic circuit in his study of Electronic engineering.
The scientist’s investigation covers issues in Optoelectronics, Silicon, Threshold voltage, High-electron-mobility transistor and Transistor. His Optoelectronics research incorporates themes from Power, Algan gan and Electron. The Silicon study combines topics in areas such as Solar cell, Electronic engineering, Doping and Contact resistance.
His study on Threshold voltage is covered under Electrical engineering. His Transistor research is multidisciplinary, incorporating elements of Condensed matter physics, Heterojunction, Quantum tunnelling, Electronic band structure and Graphene. Ganesh S. Samudra combines subjects such as Capacitance and Power semiconductor device with his study of MOSFET.
His scientific interests lie mostly in Optoelectronics, Electronic engineering, Silicon, MOSFET and Transistor. Ganesh S. Samudra is involved in the study of Optoelectronics that focuses on Schottky barrier in particular. His Electronic engineering research incorporates elements of Field-effect transistor and Tunnel effect, Quantum tunnelling.
His biological study spans a wide range of topics, including Solar cell, Wafer, Doping and Process simulation. In his study, Capacitance and Semiconductor device modeling is inextricably linked to Negative impedance converter, which falls within the broad field of MOSFET. Ganesh S. Samudra works mostly in the field of Transistor, limiting it down to topics relating to Wide-bandgap semiconductor and, in certain cases, Electric field, Electron density, Transient, Thermal conduction and Dielectric.
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Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo.
Journal of Applied Physics (2008)
Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
C. Shen;M.-F. Li;C. E. Foo;T. Yang.
international electron devices meeting (2006)
Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs
R.T.P. Lee;Tsung-Yang Liow;Kian-Ming Tan;A.E.-J. Lim.
symposium on vlsi technology (2007)
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance
Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo.
IEEE Transactions on Electron Devices (2004)
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
Eng-Huat Toh;Grace Huiqi Wang;Ganesh Samudra;Yee-Chia Yeo.
Applied Physics Letters (2007)
Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
Kah Wee Ang;King Jien Chui;V. Bliznetsov;Anyan Du.
international electron devices meeting (2004)
Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors
Kah-Wee Ang;King-Jien Chui;Vladimir Bliznetsov;Chih-Hang Tung.
Applied Physics Letters (2005)
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
Eng-Huat Toh;Grace Huiqi Wang;Lap Chan;Ganesh Samudra.
Applied Physics Letters (2007)
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
Eng Huat Toh;Grace Huiqi Wang;Lap Chan;Dennis Sylvester.
Japanese Journal of Applied Physics (2008)
A Variational Approach to the Two-Dimensional Nonlinear Poisson's Equation for the Modeling of Tunneling Transistors
Chen Shen;Sern-Long Ong;Chun-Huat Heng;G. Samudra.
IEEE Electron Device Letters (2008)
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