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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
4166
World Ranking
6562
National Ranking
98

Overview

Yung C. Liang is affiliated with the National University of Singapore in Singapore. Their research primarily focuses on engineering and physics, with significant contributions to subfields such as electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, biomedical engineering, and mechanical engineering.

The scientist's work covers several main topics, including GaN-based semiconductor devices and materials, Ga₂O₃ and related materials, magnetic field sensor techniques, photocathodes and microchannel plates, semiconductor materials and devices, ZnO doping and properties, and cellular and composite structures.

Yung C. Liang has published extensively, with notable papers including:

  • High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection (2022, Applied Physics Letters)
  • 100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics (2023, ACS Photonics)
  • Pt single-atom electrocatalysts at Cu₂O nanowires for boosting electrochemical sensing toward glucose (2024, Chemical Engineering Journal)
  • Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al₂O₃ gate dielectric (2020, Japanese Journal of Applied Physics)
  • Design of conformal lattice metamaterials for additive manufacturing (2024, Current Opinion in Solid State and Materials Science)

Their frequent coauthors include Huolin Huang, Yuhan Pu, Yanhong Liu, Nan Sun, and Lingxi Xia.

Yung C. Liang's research has appeared repeatedly in several publication venues, reflecting their active participation in their fields. These venues include:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Chemical Engineering Journal
  • ACS Photonics

Best Publications

  • Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films

    Wei Ji;Kui Yao;Yung C. Liang

  • High efficient photovoltaics in nanoscaled ferroelectric thin films

    Meng Qin;Kui Yao;Yung C. Liang

  • Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces

    Meng Qin;Kui Yao;Yung C. Liang

  • Epitaxial ferroelectric BiFeO3 thin films for unassisted photocatalytic water splitting

    Wei Ji;Kui Yao;Yee-Fun Lim;Yung C. Liang

  • Evidence of bulk photovoltaic effect and large tensor coefficient in ferroelectric BiFeO 3 thin films

    Wei Ji;Wei Ji;Kui Yao;Yung C. Liang

  • Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

    Huolin Huang;Yung C. Liang;Ganesh S. Samudra;Ting-Fu Chang

  • Diode forward and reverse recovery model for power electronic SPICE simulations

    Y.-C. Liang;V.J. Gosbell

  • Photovoltaic characteristics in polycrystalline and epitaxial (Pb0.97La0.03)(Zr0.52Ti0.48)O3 ferroelectric thin films sandwiched between different top and bottom electrodes

    Meng Qin;Kui Yao;Yung C. Liang

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Thickness effects on photoinduced current in ferroelectric (Pb0.97La0.03)(Zr0.52Ti0.48)O3 thin films

    Meng Qin;Kui Yao;Yung C. Liang;Santiranjan Shannigrahi

  • Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices

    Y.C. Liang;K.P. Gan;G.S. Samudra

  • Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices

    K.P. Gan;Y.C. Liang;G.S. Samudra;S.M. Xu

  • Stability of photovoltage and trap of light-induced charges in ferroelectric WO3-doped (Pb0.97La0.03)(Zr0.52Ti0.48)O3 thin films

    Meng Qin;Kui Yao;Yung C. Liang;Bee Keen Gan

  • An Inductive Power Transfer System With a High-Q Resonant Tank for Mobile Device Charging

    Qifan Li;Yung C. Liang

  • On the electrostatic equilibrium of granular flow in pneumatic conveying systems

    Jun Yao;Yan Zhang;Chi-Hwa Wang;Chi-Hwa Wang;Yung C. Liang

  • Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

    Huolin Huang;Yung C. Liang;Ganesh S. Samudra;Cassandra Low Lee Ngo

  • The effects of non-parallel plates in a differential capacitive microaccelerometer

    F E H Tay;Xu Jun;Y C Liang;V J Logeeswaran

  • Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

    Xin Yang;Y.C. Liang;G.S. Samudra;Yong Liu

  • 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

    Shuming Xu;K.P. Gan;G.S. Samudra;Y.C. Liang

  • Design of smart power synchronous rectifier

    Honglin Pan;Y.C. Liang;R. Oruganti

  • Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices

    Yu Chen;Y.C. Liang;G.S. Samudra

  • A simple technology for superjunction device fabrication: polyflanked VDMOSFET

    Kian Paau Gan;Xin Yang;Y.C. Liang;G.S. Samudra

  • Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

    Ting-Fu Chang;Tsung-Chieh Hsiao;Chih-Fang Huang;Wei-Hung Kuo

Frequent Co-Authors

Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Kui Yao
Kui Yao Agency for Science, Technology and Research
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Huiqing Wen
Huiqing Wen Xi’an Jiaotong-Liverpool University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Wei Ji
Wei Ji Renmin University of China
Bo Zhang
Bo Zhang University of Electronic Science and Technology of China
Paul R. Chalker
Paul R. Chalker University of Liverpool
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Ashwin M. Khambadkone
Ashwin M. Khambadkone National University of Singapore

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