World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
4166
World Ranking
6561
National Ranking
97

Yung C. Liang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yung C. Liang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 155 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yung C. Liang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yung C. Liang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yung C. Liang is affiliated with the National University of Singapore in Singapore. Their research primarily focuses on engineering and physics, with significant contributions to subfields such as electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, biomedical engineering, and mechanical engineering.

The scientist's work covers several main topics, including GaN-based semiconductor devices and materials, Ga₂O₃ and related materials, magnetic field sensor techniques, photocathodes and microchannel plates, semiconductor materials and devices, ZnO doping and properties, and cellular and composite structures.

Yung C. Liang has published extensively, with notable papers including:

  • High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection (2022, Applied Physics Letters)
  • 100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics (2023, ACS Photonics)
  • Pt single-atom electrocatalysts at Cu₂O nanowires for boosting electrochemical sensing toward glucose (2024, Chemical Engineering Journal)
  • Effect of surface treatment on electrical properties of GaN metal-insulator-semiconductor devices with Al₂O₃ gate dielectric (2020, Japanese Journal of Applied Physics)
  • Design of conformal lattice metamaterials for additive manufacturing (2024, Current Opinion in Solid State and Materials Science)

Their frequent coauthors include Huolin Huang, Yuhan Pu, Yanhong Liu, Nan Sun, and Lingxi Xia.

Yung C. Liang's research has appeared repeatedly in several publication venues, reflecting their active participation in their fields. These venues include:

  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Chemical Engineering Journal
  • ACS Photonics

Best Publications

  • Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films

    Wei Ji;Kui Yao;Yung C. Liang

  • High efficient photovoltaics in nanoscaled ferroelectric thin films

    Meng Qin;Kui Yao;Yung C. Liang

  • Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces

    Meng Qin;Kui Yao;Yung C. Liang

  • Epitaxial ferroelectric BiFeO3 thin films for unassisted photocatalytic water splitting

    Wei Ji;Kui Yao;Yee-Fun Lim;Yung C. Liang

  • Evidence of bulk photovoltaic effect and large tensor coefficient in ferroelectric BiFeO 3 thin films

    Wei Ji;Wei Ji;Kui Yao;Yung C. Liang

  • Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

    Huolin Huang;Yung C. Liang;Ganesh S. Samudra;Ting-Fu Chang

  • Diode forward and reverse recovery model for power electronic SPICE simulations

    Y.-C. Liang;V.J. Gosbell

  • Photovoltaic characteristics in polycrystalline and epitaxial (Pb0.97La0.03)(Zr0.52Ti0.48)O3 ferroelectric thin films sandwiched between different top and bottom electrodes

    Meng Qin;Kui Yao;Yung C. Liang

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • Thickness effects on photoinduced current in ferroelectric (Pb0.97La0.03)(Zr0.52Ti0.48)O3 thin films

    Meng Qin;Kui Yao;Yung C. Liang;Santiranjan Shannigrahi

  • Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices

    Y.C. Liang;K.P. Gan;G.S. Samudra

  • Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices

    K.P. Gan;Y.C. Liang;G.S. Samudra;S.M. Xu

  • Stability of photovoltage and trap of light-induced charges in ferroelectric WO3-doped (Pb0.97La0.03)(Zr0.52Ti0.48)O3 thin films

    Meng Qin;Kui Yao;Yung C. Liang;Bee Keen Gan

  • An Inductive Power Transfer System With a High-Q Resonant Tank for Mobile Device Charging

    Qifan Li;Yung C. Liang

  • On the electrostatic equilibrium of granular flow in pneumatic conveying systems

    Jun Yao;Yan Zhang;Chi-Hwa Wang;Chi-Hwa Wang;Yung C. Liang

  • Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

    Huolin Huang;Yung C. Liang;Ganesh S. Samudra;Cassandra Low Lee Ngo

  • The effects of non-parallel plates in a differential capacitive microaccelerometer

    F E H Tay;Xu Jun;Y C Liang;V J Logeeswaran

  • Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

    Xin Yang;Y.C. Liang;G.S. Samudra;Yong Liu

  • 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

    Shuming Xu;K.P. Gan;G.S. Samudra;Y.C. Liang

  • Design of smart power synchronous rectifier

    Honglin Pan;Y.C. Liang;R. Oruganti

  • Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices

    Yu Chen;Y.C. Liang;G.S. Samudra

  • A simple technology for superjunction device fabrication: polyflanked VDMOSFET

    Kian Paau Gan;Xin Yang;Y.C. Liang;G.S. Samudra

  • Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

    Ting-Fu Chang;Tsung-Chieh Hsiao;Chih-Fang Huang;Wei-Hung Kuo

Frequent Co-Authors

Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Kui Yao
Kui Yao Agency for Science, Technology and Research
Francis E. H. Tay
Francis E. H. Tay National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Chi-Hwa Wang
Chi-Hwa Wang National University of Singapore
Huiqing Wen
Huiqing Wen Xi’an Jiaotong-Liverpool University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Wei Ji
Wei Ji Renmin University of China
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Paul R. Chalker
Paul R. Chalker University of Liverpool

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Related Online Degrees & Career Pathways

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Additionally, those interested in teaching or training engineers can pursue education-focused degrees. The best online master's for teaching programs offer specialized training in instructional design and educational methodologies, enhancing your ability to develop effective learning experiences in technology and engineering contexts.

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