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D-Index & Metrics

Materials Science

D-Index
48
Citations
8522
World Ranking
10838
National Ranking
3009

Overview

Kui-juan Jin is affiliated with the Chinese Academy of Sciences in China and has contributed extensively to the fields of Materials Science, Engineering, and Physics and Astronomy. Their research spans multiple subfields, including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Condensed Matter Physics.

Their work covers a range of topics such as:

  • Multiferroics and related materials
  • Magnetic and transport properties of perovskites and related materials
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Condensed Matter Physics
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices

Kui-juan Jin has published numerous papers, with notable recent works including:

  • "Ultrahigh energy storage in superparaelectric relaxor ferroelectrics," 2021, Science
  • "Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors," 2022, Nature Communications
  • "A robust neuromorphic vision sensor with optical control of ferroelectric switching," 2021, Nano Energy
  • "Pressure-induced monotonic enhancement of Tc to over 30 K in superconducting Pr0.82Sr0.18NiO2 thin films," 2022, Nature Communications
  • "Facile in situ reductive synthesis of both nitrogen deficient and protonated g-C3N4 nanosheets for the synergistic enhancement of visible-light H2 evolution," 2020, Chemical Science

The frequent coauthors associated with Kui-juan Jin include:

  • Er-Jia Guo
  • Chen Ge
  • Can Wang
  • Lin Gu
  • Qinghua Zhang

Kui-juan Jin has published extensively in several scientific venues. The most common publication platforms are:

  • arXiv (Cornell University)
  • Nature Communications
  • Advanced Materials
  • Advanced Functional Materials
  • Small

Best Publications

  • Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

    Can Wang;Kui-juan Jin;Zhong-tang Xu;Le Wang

  • Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor.

    Jing-Ting Yang;Chen Ge;Jian-Yu Du;He-Yi Huang

  • Reproducible Ultrathin Ferroelectric Domain Switching for High-Performance Neuromorphic Computing.

    Jiankun Li;Chen Ge;Chen Ge;Jianyu Du;Can Wang

  • Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

    Zhong-tang Xu;Kui-juan Jin;Lin Gu;Yu-ling Jin

  • A Ferrite Synaptic Transistor with Topotactic Transformation.

    Chen Ge;Chang-Xiang Liu;Chang-Xiang Liu;Qing-Li Zhou;Qing-Hua Zhang

  • Electrolyte‐Gated Synaptic Transistor with Oxygen Ions

    He‐Yi Huang;Chen Ge;Qing‐Hua Zhang;Chang‐Xiang Liu

  • Interfacial Oxygen Vacancies as a Potential Cause of Hysteresis in Perovskite Solar Cells

    Fan Zhang;Wei Ma;Haizhong Guo;Yicheng Zhao

  • Picosecond photoelectric characteristic in La0.7Sr0.3MnO3∕Si p-n junctions

    Hui-Bin Lu;Kui-Juan Jin;Yan-Hong Huang;Meng He

  • High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p–n junctions

    H. B. Lu;S. Y. Dai;Z. H. Chen;Y. L. Zhou

  • A robust neuromorphic vision sensor with optical control of ferroelectric switching

    Jianyu Du;Donggang Xie;Donggang Xie;Qinghua Zhang;Hai Zhong

  • Dember effect induced photovoltage in perovskite p-n heterojunctions

    Kui-Juan Jin;Kun Zhao;Hui-Bin Lu;Leng Liao

  • Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

    Guo-Zhen Liu;Can Wang;Chun-Chang Wang;Jie Qiu

  • Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si

    Kun Zhao;Kui-juan Jin;Huibin Lu;Yanhong Huang

  • Positive colossal magnetoresistance in a multilayer p–n heterostructure of Sr-doped LaMnO3 and Nb-doped SrTiO3

    H. B. Lu;G. Z. Yang;Z. H. Chen;S. Y. Dai

  • Novel Multifunctional Properties Induced by Interface Effects in Perovskite Oxide Heterostructures

    Kui-juan Jin;Hui-bin Lu;Kun Zhao;Chen Ge

  • Ultraviolet fast-response photoelectric effect in tilted orientation SrTiO3 single crystals

    Kun Zhao;Kui-juan Jin;Yanhong Huang;Songqing Zhao

  • Self-driven visible-blind photodetector based on ferroelectric perovskite oxides

    Jian-kun Li;Chen Ge;Kui-juan Jin;Jian-yu Du

  • Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy

    Yan Yin;Zengguang Cheng;Li Wang;Kuijuan Jin

  • Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO 2.5-σ

    Qinghua Zhang;Qinghua Zhang;Xu He;Jinan Shi;Nianpeng Lu

  • The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties

    Haizhong Guo;Jia-ou Wang;Xu He;Zhenzhong Yang

  • Influence of Ce doping on leakage current in Ba 0.5 Sr 0.5 TiO 3 films

    S Y Wang;B L Cheng;Can Wang;S A T Redfern

  • Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

    Le Wang;Sibashisa Dash;Lei Chang;Lu You

Frequent Co-Authors

Huibin Lu
Huibin Lu Chinese Academy of Sciences
Meng He
Meng He National Center for Nanoscience and Technology
Qinghua Zhang
Qinghua Zhang Southwest Jiaotong University
Lin Gu
Lin Gu Chinese Academy of Sciences
Le Wang
Le Wang Pacific Northwest National Laboratory
Jiaou Wang
Jiaou Wang Chinese Academy of Sciences
Lifeng Liu
Lifeng Liu International Iberian Nanotechnology Laboratory
Barry C. Sanders
Barry C. Sanders University of Calgary
Zhenzhong Yang
Zhenzhong Yang Tsinghua University
Sheng Meng
Sheng Meng Chinese Academy of Sciences

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