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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 44 12098 11697 3317 3302 261 6837

Xubing Lu publications per year

The chart shows the history of publications by Xubing Lu between 2009 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Xubing Lu published across 17 years, from 2009 to 2025, averaging 16.7 papers a year. Output peaked at 34 publications in 2022. 42 of the 284 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2009 to 2025. Vertical axis: number of publications, 0 to 34. Peak 34 publications in 2022. 2009: 1 publication 2010: 0 publications 2011: 2 publications 2012: 2 publications 2013: 0 publications 2014: 7 publications 2015: 11 publications 2016: 18 publications 2017: 30 publications 2018: 28 publications 2019: 29 publications 2020: 27 publications 2021: 27 publications 2022: 34 publications 2023: 26 publications 2024: 20 publications 2025: 22 publications
2009 2025

284 publications in total across all disciplines

View publications per year as a table
Xubing Lu: publications per year, 2009 to 2025
Year Publications
2009 1
2010 0
2011 2
2012 2
2013 0
2014 7
2015 11
2016 18
2017 30
2018 28
2019 29
2020 27
2021 27
2022 34
2023 26
2024 20
2025 22
Total 284
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Xubing Lu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Xubing Lu sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 250–269 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 261 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726 261
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Xubing Lu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Xubing Lu sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 44–45 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612 44
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Xubing Lu is affiliated with South China Normal University in China and has a research focus primarily in the fields of Engineering and Materials Science. Their work spans multiple subfields, with significant contributions in Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

The scientist's research topics include advanced memory and neural computing, ferroelectric and negative capacitance devices, perovskite materials and applications, ferroelectric and piezoelectric materials, conducting polymers and applications, multiferroics and related materials, and semiconductor materials and devices.

Recent publications by Xubing Lu reflect these focus areas and include:

  • Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision (2022, Nature Communications)
  • All-ferroelectric implementation of reservoir computing (2023, Nature Communications)
  • Simultaneously enhanced energy storage density and efficiency in novel BiFeO3-based lead-free ceramic capacitors (2020, Journal of the European Ceramic Society)
  • Constructing molecular bridge for high-efficiency and stable perovskite solar cells based on P3HT (2022, Nature Communications)
  • An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing (2021, Materials Today Physics)

Xubing Lu's frequent coauthors include:

  • Jun-Ming Liu
  • Xingsen Gao
  • Zhen Fan
  • Min Zeng
  • Guofu Zhou

The main publication venues for this researcher encompass:

  • ACS Applied Materials & Interfaces
  • Applied Physics Letters
  • Physical Review B
  • Nature Communications
  • Surfaces and Interfaces

Best Publications

  • Solution‐Processable Organic Single Crystals with Bandlike Transport in Field‐Effect Transistors

    Chuan Liu;Takeo Minari;Xubing Lu;Akichika Kumatani

  • High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states

    Zhongwen Li;Yujia Wang;Guo Tian;Peilian Li

  • Efficient and carbon-based hole transport layer-free CsPbI2Br planar perovskite solar cells using PMMA modification

    Xiang Zhang;Yang Zhou;Yuzhu Li;Jiawen Sun

  • Constructing molecular bridge for high-efficiency and stable perovskite solar cells based on P3HT

    Unknown

  • Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3 Film

    Yuxi Yang;Guoliang Yuan;Zhibo Yan;Yaojin Wang

  • Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Rihui Yao;Zeke Zheng;Mei Xiong;Xiaochen Zhang

  • Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.

    Lina Zhao;Zengxing Lu;Fengyuan Zhang;Guo Tian

  • Stable Triple Cation Perovskite Precursor for Highly Efficient Perovskite Solar Cells Enabled by Interaction with 18C6 Stabilizer

    Xiayan Wu;Yue Jiang;Cong Chen;Jiali Guo

  • Nonvolatile Ferroelectric‐Domain‐Wall Memory Embedded in a Complex Topological Domain Structure

    Unknown

  • Simultaneously enhanced energy storage density and efficiency in novel BiFeO3-based lead-free ceramic capacitors

    Qianjie Li;Shuaishuai Ji;Dongdong Wang;Jiangyuan Zhu

  • Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect

    Zhengwei Tan;Lanqing Hong;Zhen Fan;Junjiang Tian

  • High energy storage performances of Bi1−xSmxFe0.95Sc0.05O3 lead-free ceramics synthesized by rapid hot press sintering

    Xianlu Gao;Ye Li;Jianwei Chen;Chen Yuan

  • All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

    Zeke Zheng;Yong Zeng;Rihui Yao;Zhiqiang Fang

  • Ultrafast response and high-sensitivity acetone gas sensor based on porous hollow Ru-doped SnO2 nanotubes

    Jin Li;Jianbiao Xian;Wanjing Wang;Kai Cheng

  • An electroforming-free, analog interface-type memristor based on a SrFeOx epitaxial heterojunction for neuromorphic computing

    J. Rao;Z. Fan;L. Hong;S. Cheng

  • An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

    Lei Zhao;Zhen Fan;Shengliang Cheng;Lanqing Hong

  • Efficient and stable CH3NH3PbI3-x(SCN)x planar perovskite solar cells fabricated in ambient air with low-temperature process

    Zongbao Zhang;Yang Zhou;Yangyang Cai;Hui Liu

  • Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric

    P F Lee;X B Lu;J Y Dai;H L W Chan

  • Enhanced specific surface area of ZIF-8 derived ZnO induced by sulfuric acid modification for high-performance acetone gas sensor

    Unknown

  • Memory effects of carbon nanotubes as charge storage nodes for floating gate memory applications

    X. B. Lu;Jiyan Dai

  • Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High-Density Resistive Switching Memory.

    Junjiang Tian;Haijun Wu;Zhen Fan;Yang Zhang

  • Magnetic field gradient driven dynamics of isolated skyrmions and antiskyrmions in frustrated magnets

    J J Liang;J H Yu;J Chen;M H Qin

  • Promoting the Hole Extraction with Co3O4 Nanomaterials for Efficient Carbon‐Based CsPbI2Br Perovskite Solar Cells

    Yang Zhou;Xiang Zhang;Xubing Lu;Xingsen Gao

  • Investigation of dealloying in Au-Ag thin films by quantitative electron probe microanalysis

    X. Lu;E. Bischoff;R. Spolenak;T. J. Balk

  • Enhanced performance of CH3NH3PbI3-x Cl x perovskite solar cells by CH3NH3I modification of TiO2-perovskite layer interface.

    Wen Wang;Zongbao Zhang;Yangyang Cai;Jinshan Chen

  • Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions

    Zhen Fan;Hua Fan;Lin Yang;Peilian Li

Frequent Co-Authors

Xingsen Gao
Xingsen Gao South China Normal University
Guofu Zhou
Guofu Zhou South China Normal University
Jinwei Gao
Jinwei Gao South China Normal University
Krzysztof Kempa
Krzysztof Kempa Boston College
Junbiao Peng
Junbiao Peng South China University of Technology
Jiyan Dai
Jiyan Dai Hong Kong Polytechnic University
Chuan Liu
Chuan Liu Sun Yat-sen University
Takeo Minari
Takeo Minari National Institute for Materials Science
Shuai Dong
Shuai Dong Southeast University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology

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