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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 49 2993 2871 107 100 165 7199

Takeo Minari publications per year

The chart shows the history of publications by Takeo Minari between 2004 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Takeo Minari published across 22 years, from 2004 to 2025, averaging 8.2 papers a year. Output peaked at 19 publications in 2019. 6 of the 181 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2004 to 2025. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2019. 2004: 1 publication 2005: 1 publication 2006: 5 publications 2007: 14 publications 2008: 10 publications 2009: 10 publications 2010: 8 publications 2011: 12 publications 2012: 17 publications 2013: 5 publications 2014: 8 publications 2015: 5 publications 2016: 7 publications 2017: 9 publications 2018: 13 publications 2019: 19 publications 2020: 6 publications 2021: 13 publications 2022: 6 publications 2023: 6 publications 2024: 1 publication 2025: 5 publications
2004 2025

181 publications in total across all disciplines

View publications per year as a table
Takeo Minari: publications per year, 2004 to 2025
Year Publications
2004 1
2005 1
2006 5
2007 14
2008 10
2009 10
2010 8
2011 12
2012 17
2013 5
2014 8
2015 5
2016 7
2017 9
2018 13
2019 19
2020 6
2021 13
2022 6
2023 6
2024 1
2025 5
Total 181
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Takeo Minari publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Takeo Minari sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 165 publications — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 165
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Takeo Minari D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Takeo Minari sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 49 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130 49
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Takeo Minari is affiliated with the National Institute for Materials Science in Japan. Their research predominantly spans the fields of Engineering and Materials Science, with significant contributions to subfields such as Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Polymers and Plastics, and Cellular and Molecular Neuroscience.

Their work focuses on several key topics including Advanced Sensor and Energy Harvesting Materials, Organic Electronics and Photovoltaics, Conducting Polymers and Applications, Advanced Memory and Neural Computing, Nanomaterials and Printing Technologies, Thin-Film Transistor Technologies, and Perovskite Materials and Applications.

Takeo Minari has published numerous research papers across various scientific journals. Some recent publications include:

  • Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics, 2022, Journal of Materials Chemistry C
  • Solution-processed electronics for artificial synapses, 2020, Materials Horizons
  • Optical microresonator arrays of fluorescence-switchable diarylethenes with unreplicable spectral fingerprints, 2020, Materials Horizons
  • Direct fabrication of high-resolution and high-performance flexible electronics via surface-activation-localized electroless plating, 2020, Chemical Engineering Journal
  • Operational Stability Enhancement of Polymeric Organic Field-Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces, 2020, Advanced Electronic Materials

Their frequent coauthors include Xuying Liu, Qingqing Sun, Lingying Li, Wanli Li, and Kenji Sakamoto. Taken together, these collaborations indicate a strong network in materials science and engineering research.

The predominant venues where Takeo Minari publishes include:

  • Materials Horizons
  • Journal of Materials Chemistry C
  • Advanced Materials Technologies
  • ACS Applied Materials & Interfaces
  • Small

Best Publications

  • Solution‐Processable Organic Single Crystals with Bandlike Transport in Field‐Effect Transistors

    Chuan Liu;Takeo Minari;Xubing Lu;Akichika Kumatani

  • Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes

    Takeshi Tanaka;Hehua Jin;Yasumitsu Miyata;Shunjiro Fujii

  • Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

    Masataka Kano;Takeo Minari;Kazuhito Tsukagoshi

  • Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

    Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

  • Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

    Chuan Liu;Gongtan Li;Riccardo Di Pietro;Jie Huang

  • A unified understanding of charge transport in organic semiconductors: the importance of attenuated delocalization for the carriers

    Chuan Liu;Kairong Huang;Won-Tae Park;Minmin Li

  • Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction

    Yohei Yamamoto;Guanxin Zhang;Wusong Jin;Takanori Fukushima

  • Charge injection process in organic field-effect transistors

    Takeo Minari;Tetsuhiko Miyadera;Kazuhito Tsukagoshi;Yoshinobu Aoyagi

  • Contact-metal dependent current injection in pentacene thin-film transistors

    S. D. Wang;T. Minari;T. Miyadera;K. Tsukagoshi

  • Functional biomaterials towards flexible electronics and sensors

    Qingqing Sun;Binbin Qian;Koichiro Uto;Jinzhou Chen

  • Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact

    Takeo Minari;Peter Darmawan;Chuan Liu;Yun Li

  • Room‐Temperature Printing of Organic Thin‐Film Transistors with π‐Junction Gold Nanoparticles

    Takeo Minari;Yuki Kanehara;Chuan Liu;Kenji Sakamoto

  • The rise of conductive copper inks: challenges and perspectives

    Wanli Li;Qingqing Sun;Lingying Li;Jinting Jiu

  • Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics

    Unknown

  • Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor

    Takeo Minari;Takashi Nemoto;Seiji Isoda

  • Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift

    S. D. Wang;T. Minari;T. Miyadera;Y. Aoyagi

  • Controlled Self‐Assembly of Organic Semiconductors for Solution‐Based Fabrication of Organic Field‐Effect Transistors

    Takeo Minari;Chuan Liu;Masataka Kano;Kazuhito Tsukagoshi

  • Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors

    Chuan Liu;Yong Xu;Yun Li;William Scheideler

  • Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors

    Takeo Minari;Masataka Kano;Tetsuhiko Miyadera;Sui Dong Wang

  • On Practical Charge Injection at the Metal/Organic Semiconductor Interface

    Akichika Kumatani;Akichika Kumatani;Yun Li;Yun Li;Peter Darmawan;Takeo Minari

  • Correlation between grain size and device parameters in pentacene thin film transistors

    S. D. Wang;T. Miyadera;T. Minari;Y. Aoyagi

Frequent Co-Authors

Kazuhito Tsukagoshi
Kazuhito Tsukagoshi National Institute for Materials Science
Chuan Liu
Chuan Liu Sun Yat-sen University
Yong Xu
Yong Xu Nanjing University of Posts and Telecommunications
Yong-Young Noh
Yong-Young Noh Pohang University of Science and Technology
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sui-Dong Wang
Sui-Dong Wang Soochow University
Yoshinobu Aoyagi
Yoshinobu Aoyagi Ritsumeikan University
Xubing Lu
Xubing Lu South China Normal University
Minoru Osada
Minoru Osada Nagoya University
Seiji Isoda
Seiji Isoda Kyoto University

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