World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
74
Citations
18566
World Ranking
3668
National Ranking
154

Kazuhito Tsukagoshi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kazuhito Tsukagoshi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 502 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kazuhito Tsukagoshi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kazuhito Tsukagoshi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kazuhito Tsukagoshi is affiliated with the National Institute for Materials Science in Japan. Their primary research focuses on the broad fields of Materials Science and Engineering, with significant contributions in subfields such as Materials Chemistry, Electrical and Electronic Engineering, Polymers and Plastics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

Their work addresses several key research topics, including:

  • Graphene research and applications
  • 2D Materials and Applications
  • Molecular Junctions and Nanostructures
  • Perovskite Materials and Applications
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Conducting polymers and applications

Kazuhito Tsukagoshi has published extensively in multiple scientific venues, with frequent publications in:

  • ACS Applied Nano Materials
  • ACS Applied Materials & Interfaces
  • Advanced Science
  • Journal of Materials Chemistry C
  • ECS Meeting Abstracts

Notable recent papers include:

  • "Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics," 2021, Advanced Science
  • "Fabrication of WO3 electrochromic devices using electro-exploding wire techniques and spray coating," 2021, Solar Energy Materials and Solar Cells
  • "Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides," 2021, Chemistry of Materials
  • "Unravelling the origin of the photocarrier dynamics of fullerene-derivative passivation of SnO2 electron transporters in perovskite solar cells," 2020, Journal of Materials Chemistry A
  • "Revisiting the two-dimensional structure and reduction process of graphene oxide with in-plane X-ray diffraction," 2022, Carbon

The scientist frequently collaborates with other researchers, including:

  • Toshihide Nabatame (20 co-authored works)
  • Hiroshi Nishihara (14 co-authored works)
  • Hiroaki Maeda (13 co-authored works)
  • Takatsugu Wakahara (13 co-authored works)
  • Naoya Fukui (12 co-authored works)

Best Publications

  • Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube

    Kazuhito Tsukagoshi;Bruce W. Alphenaar;Hiroki Ago

  • Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

    Song Lin Li;Kazuhito Tsukagoshi;Emanuele Orgiu;Paolo Samorì

  • Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

    Yen Fu Lin;Yen Fu Lin;Yong Xu;Sheng Tsung Wang;Song Lin Li

  • Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.

    Song Lin Li;Song Lin Li;Hisao Miyazaki;Hisao Miyazaki;Haisheng Song;Haisheng Song;Hiromi Kuramochi;Hiromi Kuramochi

  • Solution‐Processable Organic Single Crystals with Bandlike Transport in Field‐Effect Transistors

    Chuan Liu;Takeo Minari;Xubing Lu;Akichika Kumatani

  • Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes

    Takeshi Tanaka;Hehua Jin;Yasumitsu Miyata;Shunjiro Fujii

  • Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

    Song Lin Li;Katsunori Wakabayashi;Yong Xu;Shu Nakaharai

  • Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

    Mahito Yamamoto;Sheng Tsung Wang;Meiyan Ni;Meiyan Ni;Yen Fu Lin;Yen Fu Lin

  • High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

    Haisheng Song;Haisheng Song;Songlin Li;Liang Gao;Yong Xu

  • Low-cost fully transparent ultraviolet photodetectors based on electrospun ZnO-SnO2 heterojunction nanofibers

    Wei Tian;Tianyou Zhai;Chao Zhang;Song-Lin Li

  • Self-limiting layer-by-layer oxidation of atomically thin WSe2.

    Mahito Yamamoto;Sudipta Dutta;Shinya Aikawa;Shu Nakaharai

  • Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

    H. S. Song;S. L. Li;H. Miyazaki;S. Sato

  • Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

    Masataka Kano;Takeo Minari;Kazuhito Tsukagoshi

  • Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

    Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

  • Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

    Mahito Yamamoto;Shu Nakaharai;Keiji Ueno;Kazuhito Tsukagoshi

  • Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

    Song Lin Li;Katsuyoshi Komatsu;Shu Nakaharai;Yen Fu Lin

  • In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors

    J. Takeya;J. Kato;K. Hara;K. Hara;M. Yamagishi

  • Carbon nanotube devices for nanoelectronics

    K. Tsukagoshi;N. Yoneya;S. Uryu;Y. Aoyagi

  • Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction

    Yohei Yamamoto;Guanxin Zhang;Wusong Jin;Takanori Fukushima

  • Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors

    Jun Takeya;Kazuhito Tsukagoshi;Yoshinobu Aoyagi;Taishi Takenobu

  • Charge injection process in organic field-effect transistors

    Takeo Minari;Tetsuhiko Miyadera;Kazuhito Tsukagoshi;Yoshinobu Aoyagi

  • High-performance transparent flexible transistors using carbon nanotube films

    Taishi Takenobu;Tetsuo Takahashi;Takayoshi Kanbara;Kazuhito Tsukagoshi

Frequent Co-Authors

Yoshinobu Aoyagi
Yoshinobu Aoyagi Ritsumeikan University
Takeo Minari
Takeo Minari National Institute for Materials Science
Chuan Liu
Chuan Liu Sun Yat-sen University
Yong Xu
Yong Xu Nanjing University of Posts and Telecommunications
Manabu Kiguchi
Manabu Kiguchi Tokyo Institute of Technology
Keiji Ueno
Keiji Ueno Saitama University
Sui-Dong Wang
Sui-Dong Wang Soochow University
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Hiromichi Kataura
Hiromichi Kataura National Institute of Advanced Industrial Science and Technology
Yoshihiro Iwasa
Yoshihiro Iwasa University of Tokyo

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