2026 Kazuhito Tsukagoshi: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	74	3670	3551	154	151	502	18566

Overview

Kazuhito Tsukagoshi is affiliated with the National Institute for Materials Science in Japan. Their primary research focuses on the broad fields of Materials Science and Engineering, with significant contributions in subfields such as Materials Chemistry, Electrical and Electronic Engineering, Polymers and Plastics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

Their work addresses several key research topics, including:

Graphene research and applications
2D Materials and Applications
Molecular Junctions and Nanostructures
Perovskite Materials and Applications
Semiconductor materials and devices
MXene and MAX Phase Materials
Conducting polymers and applications

Kazuhito Tsukagoshi has published extensively in multiple scientific venues, with frequent publications in:

ACS Applied Nano Materials
ACS Applied Materials & Interfaces
Advanced Science
Journal of Materials Chemistry C
ECS Meeting Abstracts

Notable recent papers include:

"Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics," 2021, Advanced Science
"Fabrication of WO3 electrochromic devices using electro-exploding wire techniques and spray coating," 2021, Solar Energy Materials and Solar Cells
"Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides," 2021, Chemistry of Materials
"Unravelling the origin of the photocarrier dynamics of fullerene-derivative passivation of SnO₂ electron transporters in perovskite solar cells," 2020, Journal of Materials Chemistry A
"Revisiting the two-dimensional structure and reduction process of graphene oxide with in-plane X-ray diffraction," 2022, Carbon

The scientist frequently collaborates with other researchers, including:

Toshihide Nabatame (20 co-authored works)
Hiroshi Nishihara (14 co-authored works)
Hiroaki Maeda (13 co-authored works)
Takatsugu Wakahara (13 co-authored works)
Naoya Fukui (12 co-authored works)

Best Publications

Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube

Kazuhito Tsukagoshi;Bruce W. Alphenaar;Hiroki Ago

1002
Citations
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Song Lin Li;Kazuhito Tsukagoshi;Emanuele Orgiu;Paolo Samorì

562
Citations
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Yen Fu Lin;Yen Fu Lin;Yong Xu;Sheng Tsung Wang;Song Lin Li

489
Citations
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.

Song Lin Li;Song Lin Li;Hisao Miyazaki;Hisao Miyazaki;Haisheng Song;Haisheng Song;Hiromi Kuramochi;Hiromi Kuramochi

452
Citations
Solution‐Processable Organic Single Crystals with Bandlike Transport in Field‐Effect Transistors

Chuan Liu;Takeo Minari;Xubing Lu;Akichika Kumatani

431
Citations
Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes

Takeshi Tanaka;Hehua Jin;Yasumitsu Miyata;Shunjiro Fujii

419
Citations
Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

Song Lin Li;Katsunori Wakabayashi;Yong Xu;Shu Nakaharai

382
Citations
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

Mahito Yamamoto;Sheng Tsung Wang;Meiyan Ni;Meiyan Ni;Yen Fu Lin;Yen Fu Lin

372
Citations
High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Haisheng Song;Haisheng Song;Songlin Li;Liang Gao;Yong Xu

337
Citations
Low-cost fully transparent ultraviolet photodetectors based on electrospun ZnO-SnO2 heterojunction nanofibers

Wei Tian;Tianyou Zhai;Chao Zhang;Song-Lin Li

317
Citations
Self-limiting layer-by-layer oxidation of atomically thin WSe2.

Mahito Yamamoto;Sudipta Dutta;Shinya Aikawa;Shu Nakaharai

266
Citations
Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

H. S. Song;S. L. Li;H. Miyazaki;S. Sato

243
Citations
Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

Masataka Kano;Takeo Minari;Kazuhito Tsukagoshi

241
Citations
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

239
Citations
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Mahito Yamamoto;Shu Nakaharai;Keiji Ueno;Kazuhito Tsukagoshi

202
Citations
Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Song Lin Li;Katsuyoshi Komatsu;Shu Nakaharai;Yen Fu Lin

201
Citations
In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors

J. Takeya;J. Kato;K. Hara;K. Hara;M. Yamagishi

198
Citations
Carbon nanotube devices for nanoelectronics

K. Tsukagoshi;N. Yoneya;S. Uryu;Y. Aoyagi

197
Citations
Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction

Yohei Yamamoto;Guanxin Zhang;Wusong Jin;Takanori Fukushima

191
Citations
Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors

Jun Takeya;Kazuhito Tsukagoshi;Yoshinobu Aoyagi;Taishi Takenobu

190
Citations
Charge injection process in organic field-effect transistors

Takeo Minari;Tetsuhiko Miyadera;Kazuhito Tsukagoshi;Yoshinobu Aoyagi

178
Citations
High-performance transparent flexible transistors using carbon nanotube films

Taishi Takenobu;Tetsuo Takahashi;Takayoshi Kanbara;Kazuhito Tsukagoshi

176
Citations