2026 Keiji Ueno: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	43	12291	11886	772	736	385	7675

Overview

Keiji Ueno is a researcher affiliated with Saitama University in Japan, focused on the fields of Materials Science and Engineering. Their scholarly work predominantly addresses areas within materials chemistry and electrical and electronic engineering, contributing extensively to the understanding of material properties and device functionalities.

Their research interests span multiple specialized subfields including:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Electronic, Optical and Magnetic Materials

Keiji Ueno's main scientific topics cover:

2D Materials and Applications
Crystallization and Solubility Studies
X-ray Diffraction in Crystallography
MXene and MAX Phase Materials
Graphene Research and Applications
Ferroelectric and Negative Capacitance Devices
Perovskite Materials and Applications

Their frequent publication venues further highlight the areas of their active research, including:

The Cambridge Structural Database
ACS Applied Materials & Interfaces
Applied Physics Letters
ACS Nano
ACS Applied Electronic Materials

Keiji Ueno has contributed to a number of research articles recently, which include the following notable papers:

"Flat bands in twisted bilayer transition metal dichalcogenides" (2020, Nature Physics)
"Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures" (2021, Physical Review Letters)
"All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality" (2020, ACS Applied Materials & Interfaces)
"Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory" (2021, ACS Nano)
"p-Type Conversion of WS₂ and WSe₂ by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors" (2023, ACS Applied Materials & Interfaces)

Keiji Ueno collaborates frequently with several researchers, which include:

Kenji Watanabe
Takashi Taniguchi
Kosuke Nagashio
Takako Muraoka
Tomonori Nishimura

Best Publications

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Yen Fu Lin;Yen Fu Lin;Yong Xu;Sheng Tsung Wang;Song Lin Li

489
Citations
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Lin Zhou;Kai Xu;Ahmad Zubair;Albert D. Liao

393
Citations
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

Mahito Yamamoto;Sheng Tsung Wang;Meiyan Ni;Meiyan Ni;Yen Fu Lin;Yen Fu Lin

372
Citations
Flat bands in twisted bilayer transition metal dichalcogenides

Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

349
Citations
High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Haisheng Song;Haisheng Song;Songlin Li;Liang Gao;Yong Xu

337
Citations
Self-limiting layer-by-layer oxidation of atomically thin WSe2.

Mahito Yamamoto;Sudipta Dutta;Shinya Aikawa;Shu Nakaharai

266
Citations
Flat bands in twisted bilayer transition metal dichalcogenides

Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

264
Citations
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Mahito Yamamoto;Shu Nakaharai;Keiji Ueno;Kazuhito Tsukagoshi

202
Citations
van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2

F. S. Ohuchi;B. A. Parkinson;K. Ueno;A. Koma

185
Citations
Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures.

Junho Choi;Matthias Florian;Alexander Steinhoff;Daniel Erben

174
Citations
Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition.

Lin Zhou;Ahmad Zubair;Ziqiang Wang;Xu Zhang

172
Citations
Monolayer 1T-NbSe2 as a Mott insulator

Yuki Nakata;Katsuaki Sugawara;Ryota Shimizu;Ryota Shimizu;Yoshinori Okada

154
Citations
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

Shu Nakaharai;Mahito Yamamoto;Keiji Ueno;Yen Fu Lin;Yen Fu Lin

147
Citations
Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs{111} surfaces

Keiji Ueno;Toshihiro Shimada;Koichiro Saiki;Atsushi Koma

147
Citations
Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica

Keiji Ueno;Koichiro Saiki;Toshihiro Shimada;Atsushi Koma

146
Citations
Double resonance Raman modes in monolayer and few-layer MoTe2

Huaihong Guo;Teng Yang;Teng Yang;Mahito Yamamoto;Lin Zhou

143
Citations
Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells

Qiming Liu;Masahiro Ono;Zeguo Tang;Ryo Ishikawa

138
Citations
Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors

Manabu Kiguchi;Manabu Nakayama;Kohei Fujiwara;Keiji Ueno

138
Citations
Highly Efficient Solution‐Processed Poly(3,4‐ethylenedio‐xythiophene):Poly(styrenesulfonate)/Crystalline–Silicon Heterojunction Solar Cells with Improved Light‐Induced Stability

Qiming Liu;Ryo Ishikawa;Shuji Funada;Tatsuya Ohki

130
Citations
Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two‐dimensional materials

B. A. Parkinson;F. S. Ohuchi;K. Ueno;A. Koma

118
Citations
Structural phase transition accompanied by metal-insulator transition in PrRu4P12

C H Lee;H Matsuhata;A Yamamoto;T Ohta

107
Citations
Application of Van der Waals epitaxy to highly heterogeneous systems

Koichiro Saiki;Keiji Ueno;Toshihiro Shimada;Atsushi Koma

101
Citations
Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.

Yen Fu Lin;Yong Xu;Che Yi Lin;Yuen Wuu Suen

85
Citations