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D-Index & Metrics

Materials Science

D-Index
43
Citations
7675
World Ranking
12287
National Ranking
772

Keiji Ueno publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Keiji Ueno sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 385 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Keiji Ueno D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Keiji Ueno sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Keiji Ueno is a researcher affiliated with Saitama University in Japan, focused on the fields of Materials Science and Engineering. Their scholarly work predominantly addresses areas within materials chemistry and electrical and electronic engineering, contributing extensively to the understanding of material properties and device functionalities.

Their research interests span multiple specialized subfields including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials

Keiji Ueno's main scientific topics cover:

  • 2D Materials and Applications
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • MXene and MAX Phase Materials
  • Graphene Research and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Perovskite Materials and Applications

Their frequent publication venues further highlight the areas of their active research, including:

  • The Cambridge Structural Database
  • ACS Applied Materials & Interfaces
  • Applied Physics Letters
  • ACS Nano
  • ACS Applied Electronic Materials

Keiji Ueno has contributed to a number of research articles recently, which include the following notable papers:

  • "Flat bands in twisted bilayer transition metal dichalcogenides" (2020, Nature Physics)
  • "Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures" (2021, Physical Review Letters)
  • "All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality" (2020, ACS Applied Materials & Interfaces)
  • "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory" (2021, ACS Nano)
  • "p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors" (2023, ACS Applied Materials & Interfaces)

Keiji Ueno collaborates frequently with several researchers, which include:

  • Kenji Watanabe
  • Takashi Taniguchi
  • Kosuke Nagashio
  • Takako Muraoka
  • Tomonori Nishimura

Best Publications

  • Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

    Yen Fu Lin;Yen Fu Lin;Yong Xu;Sheng Tsung Wang;Song Lin Li

  • Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

    Lin Zhou;Kai Xu;Ahmad Zubair;Albert D. Liao

  • Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

    Mahito Yamamoto;Sheng Tsung Wang;Meiyan Ni;Meiyan Ni;Yen Fu Lin;Yen Fu Lin

  • Flat bands in twisted bilayer transition metal dichalcogenides

    Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

  • High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

    Haisheng Song;Haisheng Song;Songlin Li;Liang Gao;Yong Xu

  • Self-limiting layer-by-layer oxidation of atomically thin WSe2.

    Mahito Yamamoto;Sudipta Dutta;Shinya Aikawa;Shu Nakaharai

  • Flat bands in twisted bilayer transition metal dichalcogenides

    Zhiming Zhang;Yimeng Wang;Kenji Watanabe;Takashi Taniguchi

  • Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

    Mahito Yamamoto;Shu Nakaharai;Keiji Ueno;Kazuhito Tsukagoshi

  • van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2

    F. S. Ohuchi;B. A. Parkinson;K. Ueno;A. Koma

  • Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures.

    Junho Choi;Matthias Florian;Alexander Steinhoff;Daniel Erben

  • Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2 from Chemical Vapor Deposition.

    Lin Zhou;Ahmad Zubair;Ziqiang Wang;Xu Zhang

  • Monolayer 1T-NbSe2 as a Mott insulator

    Yuki Nakata;Katsuaki Sugawara;Ryota Shimizu;Ryota Shimizu;Yoshinori Okada

  • Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors.

    Shu Nakaharai;Mahito Yamamoto;Keiji Ueno;Yen Fu Lin;Yen Fu Lin

  • Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs{111} surfaces

    Keiji Ueno;Toshihiro Shimada;Koichiro Saiki;Atsushi Koma

  • Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica

    Keiji Ueno;Koichiro Saiki;Toshihiro Shimada;Atsushi Koma

  • Double resonance Raman modes in monolayer and few-layer MoTe2

    Huaihong Guo;Teng Yang;Teng Yang;Mahito Yamamoto;Lin Zhou

  • Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells

    Qiming Liu;Masahiro Ono;Zeguo Tang;Ryo Ishikawa

  • Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors

    Manabu Kiguchi;Manabu Nakayama;Kohei Fujiwara;Keiji Ueno

  • Highly Efficient Solution‐Processed Poly(3,4‐ethylenedio‐xythiophene):Poly(styrenesulfonate)/Crystalline–Silicon Heterojunction Solar Cells with Improved Light‐Induced Stability

    Qiming Liu;Ryo Ishikawa;Shuji Funada;Tatsuya Ohki

  • Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two‐dimensional materials

    B. A. Parkinson;F. S. Ohuchi;K. Ueno;A. Koma

  • Structural phase transition accompanied by metal-insulator transition in PrRu4P12

    C H Lee;H Matsuhata;A Yamamoto;T Ohta

  • Application of Van der Waals epitaxy to highly heterogeneous systems

    Koichiro Saiki;Keiji Ueno;Toshihiro Shimada;Atsushi Koma

  • Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.

    Yen Fu Lin;Yong Xu;Che Yi Lin;Yuen Wuu Suen

Frequent Co-Authors

Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kazuhito Tsukagoshi
Kazuhito Tsukagoshi National Institute for Materials Science
Manabu Kiguchi
Manabu Kiguchi Tokyo Institute of Technology
Ryo Kitaura
Ryo Kitaura Nagoya University
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Takashi Takahashi
Takashi Takahashi Tohoku University
Tomoteru Fukumura
Tomoteru Fukumura Tohoku University
Hidekazu Tanaka
Hidekazu Tanaka Ritsumeikan University

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