World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
72
Citations
19689
World Ranking
4022
National Ranking
142

Seongil Im publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Seongil Im sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 401 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Seongil Im D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Seongil Im sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 72 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Seongil Im is affiliated with Yonsei University in South Korea and has a research focus centered on materials science and engineering, particularly in the domain of 2D materials and their applications.

Their research is prominently situated within the fields of Materials Science and Engineering. More specifically, Subfields of study include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Key research topics covered by Seongil Im span several advanced and emerging areas in materials science, including:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Sensor and Energy Harvesting Materials

Seongil Im has contributed articles to multiple scientific journals, with notable frequent appearances in:

  • Advanced Functional Materials
  • Advanced Materials
  • Advanced Electronic Materials
  • ACS Nano
  • npj 2D Materials and Applications

Recent papers authored or coauthored by Seongil Im include:

  • Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics, 2023, Nature Nanotechnology
  • Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance, 2020, Nature Communications
  • Ambipolar Channel p-TMD/n-Ga2O3 Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel, 2021, Advanced Materials
  • Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions, 2022, npj 2D Materials and Applications
  • 2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications, 2020, Advanced Functional Materials

The scientist collaborates frequently with other researchers, including:

  • Sungjae Hong
  • Kwanpyo Kim
  • Yeonsu Jeong
  • Heesun Bae
  • Hyunmin Cho

Best Publications

  • MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

    Hee Sung Lee;Sung Wook Min;Youn Gyung Chang;Min Kyu Park

  • 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display

    Sang Hee Ko Park;Minki Ryu;Chi Sun Hwang;Shinhyuk Yang

  • Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers

    Min Suk Oh;Kimoon Lee;J. H. Song;Byoung H. Lee

  • Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition

    B.J Jin;S Im;S.Y Lee

  • Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

    I.-S. Jeong;Jae Hoon Kim;Seongil Im

  • Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition

    B.J. Jin;S.H. Bae;S.Y. Lee;S. Im

  • Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel

    Sang Hee K. Park;Chi Sun Hwang;Minki Ryu;Shinhyuk Yang

  • Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2/MoS2 Dichalcogenide Heterojunction

    Atiye Pezeshki;Seyed Hossein Hosseini Shokouh;Tavakol Nazari;Kyunghwan Oh

  • MoS2 nanosheets for top-gate nonvolatile memory transistor channel.

    Hee Sung Lee;Sung Wook Min;Min Kyu Park;Young Tack Lee

  • Optimizing n-ZnO/p-Si heterojunctions for photodiode applications

    J.Y Lee;Y.S Choi;J.H Kim;M.O Park

  • Photodetecting properties of ZnO-based thin-film transistors

    H. S. Bae;M. H. Yoon;J. H. Kim;Seongil Im

  • Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

    D. K. Hwang;Kimoon Lee;Jae Hoon Kim;Seongil Im

  • Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics

    D. K. Hwang;Min Suk Oh;Jung Min Hwang;Jae Hoon Kim

  • Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

    Do Kyung Hwang;Young Tack Lee;Hee Sung Lee;Yun Jae Lee;Yun Jae Lee

  • Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

    Pyo Jin Jeon;Young Tack Lee;June Yeong Lim;Jin Sung Kim

  • Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics.

    Unknown

  • Ultraviolet enhanced Si-photodetector using p-NiO films

    Jeong M. Choi;Seongil Im

  • Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

    Young Tack Lee;Hyeokjae Kwon;Jin Sung Kim;Hong Hee Kim

  • Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping

    June Yeong Lim;Atiye Pezeshki;Sehoon Oh;Jin Sung Kim

  • Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

    B.J. Jin;H.S. Woo;S. Im;S.H. Bae

  • Rapid vapor-phase fabrication of organic-inorganic hybrid superlattices with monolayer precision.

    Byoung H. Lee;Min Ki Ryu;Sung-Yool Choi;Kwang-H. Lee

  • Optimum channel thickness in pentacene-based thin-film transistors

    Jiyoul Lee;Kibum Kim;Jae Hoon Kim;Seongil Im

Frequent Co-Authors

Do Kyung Hwang
Do Kyung Hwang Korea Institute of Science and Technology
Myung M. Sung
Myung M. Sung Hanyang University
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Hyoung Joon Choi
Hyoung Joon Choi Yonsei University
Keun Hwa Chae
Keun Hwa Chae Korea Institute of Science and Technology
Hong Koo Baik
Hong Koo Baik Yonsei University
Nathan W. Cheung
Nathan W. Cheung University of California, Berkeley
Hyungjun Kim
Hyungjun Kim Yonsei University
Won Kook Choi
Won Kook Choi Korea Institute of Science and Technology
Seong Chan Jun
Seong Chan Jun Yonsei University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Seongil Im

Trending Scientists

Recently Published Articles