World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
11970
World Ranking
3320
National Ranking
100

Materials Science

D-Index
46
Citations
12028
World Ranking
11309
National Ranking
503

Sang-Hee Ko Park publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sang-Hee Ko Park sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 220 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sang-Hee Ko Park D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sang-Hee Ko Park sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2017 - Society for Information Display Fellow

Overview

Sang-Hee Ko Park is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research spans across engineering and materials science, with a significant focus on electrical and electronic engineering, materials chemistry, biomedical engineering, polymers and plastics, and cognitive neuroscience.

The primary topics addressed in their work include semiconductor materials and devices, thin-film transistor technologies, ZnO doping and properties, advanced sensor and energy harvesting materials, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, as well as MXene and MAX phase materials.

Among their recent publications are:

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode (2020, Nanoscale)
  • Hetero-Dimensional 2D Ti3C2Tx MXene and 1D Graphene Nanoribbon Hybrids for Machine Learning-Assisted Pressure Sensors (2021, ACS Nano)
  • Ultrathin Nanofibrous Membranes Containing Insulating Microbeads for Highly Sensitive Flexible Pressure Sensors (2020, ACS Applied Materials & Interfaces)
  • Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode (2020, IEEE Transactions on Electron Devices)
  • Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator (2021, Journal of Alloys and Compounds)

Sang-Hee Ko Park frequently collaborates with several coauthors, including Seong-In Cho, Jingyu Kim, Jong Beom Ko, Sanghun Jeon, and Seung Hee Lee.

Their research has been published multiple times in the following venues:

  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces
  • Journal of Alloys and Compounds
  • Journal of Materials Chemistry C
  • IEEE Transactions on Electron Devices

In 2017, Sang-Hee Ko Park received the Society for Information Display Fellow award.

Best Publications

  • 21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane

    Doo-Hee Cho;Shinhyuk Yang;Sang-Hee Ko Park;Chunwon Byun

  • 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display

    Sang Hee Ko Park;Minki Ryu;Chi Sun Hwang;Shinhyuk Yang

  • Challenge to Future Displays: Transparent AM-OLED driven by PEALD grown ZnO TFT

    Sang-Hee Ko Park;Chi-Sun Hwang;Chun-Won Byun;Min-Ki Ryu

  • Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

    Elvira Fortunato;Raquel Barros;Pedro Barquinha;Vitor Figueiredo

  • Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

    Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  • Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel

    Sang Hee K. Park;Chi Sun Hwang;Minki Ryu;Shinhyuk Yang

  • An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

    Young Hwan Hwang;Jin-Suk Seo;Je Moon Yun;HyungJin Park

  • Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

    Kwang Hwan Ji;Ji-In Kim;Yeon-Gon Mo;Jong Han Jeong

  • Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

    Jae-Heon Shin;Ji-Su Lee;Chi-Sun Hwang;Sang-Hee Ko Park

  • Ultrathin Film Encapsulation of an OLED by ALD

    Sang-Hee Ko Park;Jiyoung Oh;Chi-Sun Hwang;Jeong-Ik Lee

  • Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

    Shinhyuk Yang;Doo-Hee Cho;Min Ki Ryu;Sang-Hee Ko Park

  • Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant

    Seong Keun Kim;Cheol Seong Hwang;Sang-Hee Ko Park;Sun Jin Yun

  • Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

    Jin-Suk Seo;Jun-Hyuck Jeon;Young Hwan Hwang;Hyungjin Park

  • Thin-film transistors based on p-type Cu2O thin films produced at room temperature

    Elvira Fortunato;Vitor Figueiredo;Pedro Barquinha;Elangovan Elamurugu

  • Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature

    Doo-Hee Cho;Shinhyuk Yang;Chunwon Byun;Jaeheon Shin

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Youngin Goh;Sung Hyun Cho;Sang-Hee Ko Park;Sanghun Jeon

  • Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

    Haneol Lee;Seungjun Kim;Jong Beom Ko;Hye-In Yeom

  • High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition

    Sang-Hee Ko Park;Chi-Sun Hwang;Hu Young Jeong;Hye Yong Chu

Frequent Co-Authors

Chi-Sun Hwang
Chi-Sun Hwang Electronics and Telecommunications Research Institute
Hye Yong Chu
Hye Yong Chu Electronics and Telecommunications Research Institute
Jeong-Ik Lee
Jeong-Ik Lee Korea Advanced Institute of Science and Technology
Byeong-Soo Bae
Byeong-Soo Bae Korea Advanced Institute of Science and Technology
Kyung Cheol Choi
Kyung Cheol Choi Korea Advanced Institute of Science and Technology
Jin Jang
Jin Jang Kyung Hee University
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Sung-Yool Choi
Sung-Yool Choi Korea Advanced Institute of Science and Technology
Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa

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