World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
11970
World Ranking
3320
National Ranking
100

Materials Science

D-Index
46
Citations
12028
World Ranking
11311
National Ranking
503

Research.com Recognitions

  • 2017 - Society for Information Display Fellow

Overview

Sang-Hee Ko Park is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research spans across engineering and materials science, with a significant focus on electrical and electronic engineering, materials chemistry, biomedical engineering, polymers and plastics, and cognitive neuroscience.

The primary topics addressed in their work include semiconductor materials and devices, thin-film transistor technologies, ZnO doping and properties, advanced sensor and energy harvesting materials, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, as well as MXene and MAX phase materials.

Among their recent publications are:

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode (2020, Nanoscale)
  • Hetero-Dimensional 2D Ti3C2Tx MXene and 1D Graphene Nanoribbon Hybrids for Machine Learning-Assisted Pressure Sensors (2021, ACS Nano)
  • Ultrathin Nanofibrous Membranes Containing Insulating Microbeads for Highly Sensitive Flexible Pressure Sensors (2020, ACS Applied Materials & Interfaces)
  • Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode (2020, IEEE Transactions on Electron Devices)
  • Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator (2021, Journal of Alloys and Compounds)

Sang-Hee Ko Park frequently collaborates with several coauthors, including Seong-In Cho, Jingyu Kim, Jong Beom Ko, Sanghun Jeon, and Seung Hee Lee.

Their research has been published multiple times in the following venues:

  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces
  • Journal of Alloys and Compounds
  • Journal of Materials Chemistry C
  • IEEE Transactions on Electron Devices

In 2017, Sang-Hee Ko Park received the Society for Information Display Fellow award.

Best Publications

  • 21.2: Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane

    Doo-Hee Cho;Shinhyuk Yang;Sang-Hee Ko Park;Chunwon Byun

  • 42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display

    Sang Hee Ko Park;Minki Ryu;Chi Sun Hwang;Shinhyuk Yang

  • Challenge to Future Displays: Transparent AM-OLED driven by PEALD grown ZnO TFT

    Sang-Hee Ko Park;Chi-Sun Hwang;Chun-Won Byun;Min-Ki Ryu

  • Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

    Elvira Fortunato;Raquel Barros;Pedro Barquinha;Vitor Figueiredo

  • Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

    Himchan Oh;Sung-Min Yoon;Min Ki Ryu;Chi-Sun Hwang

  • Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel

    Sang Hee K. Park;Chi Sun Hwang;Minki Ryu;Shinhyuk Yang

  • An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

    Young Hwan Hwang;Jin-Suk Seo;Je Moon Yun;HyungJin Park

  • Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

    Kwang Hwan Ji;Ji-In Kim;Yeon-Gon Mo;Jong Han Jeong

  • Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

    Jae-Heon Shin;Ji-Su Lee;Chi-Sun Hwang;Sang-Hee Ko Park

  • Ultrathin Film Encapsulation of an OLED by ALD

    Sang-Hee Ko Park;Jiyoung Oh;Chi-Sun Hwang;Jeong-Ik Lee

  • Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

    Shinhyuk Yang;Doo-Hee Cho;Min Ki Ryu;Sang-Hee Ko Park

  • Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant

    Seong Keun Kim;Cheol Seong Hwang;Sang-Hee Ko Park;Sun Jin Yun

  • Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

    Jin-Suk Seo;Jun-Hyuck Jeon;Young Hwan Hwang;Hyungjin Park

  • Thin-film transistors based on p-type Cu2O thin films produced at room temperature

    Elvira Fortunato;Vitor Figueiredo;Pedro Barquinha;Elangovan Elamurugu

  • Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature

    Doo-Hee Cho;Shinhyuk Yang;Chunwon Byun;Jaeheon Shin

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Youngin Goh;Sung Hyun Cho;Sang-Hee Ko Park;Sanghun Jeon

  • Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

    Haneol Lee;Seungjun Kim;Jong Beom Ko;Hye-In Yeom

  • High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

    Min Ki Ryu;Shinhyuk Yang;Sang-Hee Ko Park;Chi-Sun Hwang

  • Transparent ZnO-TFT Arrays Fabricated by Atomic Layer Deposition

    Sang-Hee Ko Park;Chi-Sun Hwang;Hu Young Jeong;Hye Yong Chu

Frequent Co-Authors

Chi-Sun Hwang
Chi-Sun Hwang Electronics and Telecommunications Research Institute
Hye Yong Chu
Hye Yong Chu Electronics and Telecommunications Research Institute
Jeong-Ik Lee
Jeong-Ik Lee Korea Advanced Institute of Science and Technology
Byeong-Soo Bae
Byeong-Soo Bae Korea Advanced Institute of Science and Technology
Kyung Cheol Choi
Kyung Cheol Choi Korea Advanced Institute of Science and Technology
Jin Jang
Jin Jang Kyung Hee University
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Sung-Yool Choi
Sung-Yool Choi Korea Advanced Institute of Science and Technology
Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa

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