World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
17805
World Ranking
1202
National Ranking
13

Materials Science

D-Index
66
Citations
18330
World Ranking
5268
National Ranking
56

Ting-Chang Chang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ting-Chang Chang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 889 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ting-Chang Chang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ting-Chang Chang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 65 D-Index — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ting-Chang Chang is affiliated with National Sun Yat-sen University in Taiwan and has a research focus primarily in the field of Engineering, with a significant emphasis on Electrical and Electronic Engineering. Their work encompasses a range of topics including semiconductor materials and devices, thin-film transistor technologies, advanced memory and neural computing, ferroelectric and negative capacitance devices, advancements in semiconductor devices and circuit design, GaN-based semiconductor devices and materials, and ZnO doping and properties.

The scientist has contributed extensively to academic literature, with frequent publications in several key venues. These include IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Semiconductor Science and Technology, Advanced Electronic Materials, and Journal of Physics D Applied Physics.

Among their recent papers are:

  • High-Density Memristor-CMOS Ternary Logic Family (2020), IEEE Transactions on Circuits and Systems I Regular Papers
  • Flexible low-temperature polycrystalline silicon thin-film transistors (2020), Materials Today Advances
  • Strategies to Improve the Accuracy of Memristor-Based Convolutional Neural Networks (2020), IEEE Transactions on Electron Devices
  • Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices (2020), Small
  • High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator (2020), IEEE Electron Device Letters

Frequent collaborators in their work include Tsung-Ming Tsai, Po-Hsun Chen, Kuan-Ju Zhou, Mao-Chou Tai, and Yu-Fa Tu, with collaboration counts ranging from 33 to 48 joint works.

Research topics covered by Ting-Chang Chang center heavily on semiconductor-related technologies and devices. Important thematic areas identified in their research output are:

  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties

The subfields of study that frame these topics include Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Polymers and Plastics.

Best Publications

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • Developments in nanocrystal memory

    Ting-Chang Chang;Fu-Yen Jian;Fu-Yen Jian;Shih-Cheng Chen;Yu-Ting Tsai

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Multilevel resistive switching in Ti/CuxO/Pt memory devices

    Sheng Yu Wang;Chin Wen Huang;Dai Ying Lee;Tseung-Yuen Tseng

  • Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

    Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Wei-Siang Lu

  • Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

    Te-Chih Chen;Ting-Chang Chang;Chih-Tsung Tsai;Tien-Yu Hsieh

  • Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

    S.W. Tsao;T.C. Chang;S.Y. Huang;M.C. Chen

  • Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

    Chih-Tsung Tsai;Ting-Chang Chang;Shih-Ching Chen;Ikai Lo

  • Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

    Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze

  • Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

    Yu Chun Chen;Ting Chang Chang;Hung Wei Li;Shih Ching Chen

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

    Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Chih-Tsung Tsai

  • Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

    Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen

  • Temperature-programmed reduction and temperature-resolved sorption studies of strong metal-support interaction in supported palladium catalysts

    T.-C. Chang;J.-J. Chen;C.-T. Yeh

  • Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

    J.J. Yu;L.Y. Liang;L.X. Hu;H.X. Duan

  • High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

    Jingjing Yu;Jingjing Yu;Kashif Javaid;Kashif Javaid;Lingyan Liang;Weihua Wu;Weihua Wu

  • Organic-inorganic hybrid materials. V. Dynamics and degradation of Poly(methyl methacrylate) silica hybrids

    T. C. Chang;Y. T. Wang;Y. S. Hong;Y. S. Chiu

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

Frequent Co-Authors

Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Po-Tsun Liu
Po-Tsun Liu National Yang Ming Chiao Tung University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Shengdong Zhang
Shengdong Zhang Peking University
Hsiao-Wen Zan
Hsiao-Wen Zan National Yang Ming Chiao Tung University

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