World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
17805
World Ranking
1202
National Ranking
13

Materials Science

D-Index
66
Citations
18330
World Ranking
5270
National Ranking
55

Overview

Ting-Chang Chang is affiliated with National Sun Yat-sen University in Taiwan and has a research focus primarily in the field of Engineering, with a significant emphasis on Electrical and Electronic Engineering. Their work encompasses a range of topics including semiconductor materials and devices, thin-film transistor technologies, advanced memory and neural computing, ferroelectric and negative capacitance devices, advancements in semiconductor devices and circuit design, GaN-based semiconductor devices and materials, and ZnO doping and properties.

The scientist has contributed extensively to academic literature, with frequent publications in several key venues. These include IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Semiconductor Science and Technology, Advanced Electronic Materials, and Journal of Physics D Applied Physics.

Among their recent papers are:

  • High-Density Memristor-CMOS Ternary Logic Family (2020), IEEE Transactions on Circuits and Systems I Regular Papers
  • Flexible low-temperature polycrystalline silicon thin-film transistors (2020), Materials Today Advances
  • Strategies to Improve the Accuracy of Memristor-Based Convolutional Neural Networks (2020), IEEE Transactions on Electron Devices
  • Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices (2020), Small
  • High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator (2020), IEEE Electron Device Letters

Frequent collaborators in their work include Tsung-Ming Tsai, Po-Hsun Chen, Kuan-Ju Zhou, Mao-Chou Tai, and Yu-Fa Tu, with collaboration counts ranging from 33 to 48 joint works.

Research topics covered by Ting-Chang Chang center heavily on semiconductor-related technologies and devices. Important thematic areas identified in their research output are:

  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties

The subfields of study that frame these topics include Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Polymers and Plastics.

Best Publications

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • Developments in nanocrystal memory

    Ting-Chang Chang;Fu-Yen Jian;Fu-Yen Jian;Shih-Cheng Chen;Yu-Ting Tsai

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Multilevel resistive switching in Ti/CuxO/Pt memory devices

    Sheng Yu Wang;Chin Wen Huang;Dai Ying Lee;Tseung-Yuen Tseng

  • Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

    Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Wei-Siang Lu

  • Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

    Te-Chih Chen;Ting-Chang Chang;Chih-Tsung Tsai;Tien-Yu Hsieh

  • Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

    S.W. Tsao;T.C. Chang;S.Y. Huang;M.C. Chen

  • Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

    Chih-Tsung Tsai;Ting-Chang Chang;Shih-Ching Chen;Ikai Lo

  • Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

    Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze

  • Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

    Yu Chun Chen;Ting Chang Chang;Hung Wei Li;Shih Ching Chen

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

    Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Chih-Tsung Tsai

  • Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

    Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen

  • Temperature-programmed reduction and temperature-resolved sorption studies of strong metal-support interaction in supported palladium catalysts

    T.-C. Chang;J.-J. Chen;C.-T. Yeh

  • Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation

    J.J. Yu;L.Y. Liang;L.X. Hu;H.X. Duan

  • High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p–n Heterojunction

    Jingjing Yu;Jingjing Yu;Kashif Javaid;Kashif Javaid;Lingyan Liang;Weihua Wu;Weihua Wu

  • Organic-inorganic hybrid materials. V. Dynamics and degradation of Poly(methyl methacrylate) silica hybrids

    T. C. Chang;Y. T. Wang;Y. S. Hong;Y. S. Chiu

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

Frequent Co-Authors

Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Po-Tsun Liu
Po-Tsun Liu National Yang Ming Chiao Tung University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Shengdong Zhang
Shengdong Zhang Peking University
Hsiao-Wen Zan
Hsiao-Wen Zan National Yang Ming Chiao Tung University

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