D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 52 Citations 10,099 528 World Ranking 996 National Ranking 18
Materials Science D-index 60 Citations 13,924 700 World Ranking 3337 National Ranking 45

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Oxygen

Ting-Chang Chang focuses on Optoelectronics, Thin-film transistor, Resistive random-access memory, Nanotechnology and Dielectric. His research in Optoelectronics is mostly focused on Non-volatile memory. His Thin-film transistor research is multidisciplinary, relying on both Amorphous solid, Stress, Threshold voltage, Transistor and Wide-bandgap semiconductor.

His Resistive random-access memory research incorporates themes from Ion, Thermal conduction, Silicon and Thin film. His Dielectric research is multidisciplinary, incorporating elements of Hydrogen, Analytical chemistry, Photoresist, Passivation and Integrated circuit. The Electrode study which covers Tin that intersects with Resistive touchscreen.

His most cited work include:

  • Developments in nanocrystal memory (259 citations)
  • Resistance random access memory (214 citations)
  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films (173 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Thin-film transistor, Transistor, Resistive random-access memory and Layer. Ting-Chang Chang works mostly in the field of Optoelectronics, limiting it down to topics relating to Threshold voltage and, in certain cases, Gate oxide, as a part of the same area of interest. As part of one scientific family, he deals mainly with the area of Thin-film transistor, narrowing it down to issues related to the Silicon, and often Electronic engineering.

His research in Transistor intersects with topics in Composite material, Condensed matter physics, Logic gate and Leakage. His Resistive random-access memory study deals with Thermal conduction intersecting with Schottky diode. In his study, Chemical engineering and Passivation is inextricably linked to Dielectric, which falls within the broad field of Layer.

He most often published in these fields:

  • Optoelectronics (70.73%)
  • Thin-film transistor (39.23%)
  • Transistor (21.66%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (70.73%)
  • Thin-film transistor (39.23%)
  • Transistor (21.66%)

In recent papers he was focusing on the following fields of study:

Ting-Chang Chang mostly deals with Optoelectronics, Thin-film transistor, Transistor, Threshold voltage and Stress. The various areas that Ting-Chang Chang examines in his Optoelectronics study include Layer, Active layer and Electrode, Resistive random-access memory. His research investigates the link between Electrode and topics such as Tin that cross with problems in Thermal conduction.

His study focuses on the intersection of Thin-film transistor and fields such as Polycrystalline silicon with connections in the field of Silicon. His studies in Transistor integrate themes in fields like Resistor, Capacitance, Logic gate and Leakage. His research integrates issues of Hydrogen, Oxide and Electrical measurements in his study of Threshold voltage.

Between 2018 and 2021, his most popular works were:

  • LiSiO X -Based Analog Memristive Synapse for Neuromorphic Computing (19 citations)
  • Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In‐Memory Computing (17 citations)
  • Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation (15 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

Ting-Chang Chang mainly focuses on Optoelectronics, Thin-film transistor, Transistor, Threshold voltage and Memristor. Ting-Chang Chang has included themes like Layer, Active layer and Electrode, Resistive random-access memory in his Optoelectronics study. His study in Electrode is interdisciplinary in nature, drawing from both Forming processes and Random access memory.

His Thin-film transistor research includes themes of Annealing, Low-temperature polycrystalline silicon, Polycrystalline silicon, Condensed matter physics and Subthreshold conduction. The study incorporates disciplines such as Neuromorphic engineering, Stress, MNIST database and Dielectric in addition to Transistor. His biological study deals with issues like Silicon, which deal with fields such as Field effect, Intensity, Analytical chemistry and Density of states.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Developments in nanocrystal memory

Ting-Chang Chang;Fu-Yen Jian;Fu-Yen Jian;Shih-Cheng Chen;Yu-Ting Tsai.
Materials Today (2011)

394 Citations

Resistance random access memory

Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu.
Materials Today (2014)

336 Citations

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang.
Applied Physics Letters (2010)

266 Citations

Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze.
Applied Physics Letters (2008)

198 Citations

Multilevel resistive switching in Ti/CuxO/Pt memory devices

Sheng Yu Wang;Chin Wen Huang;Dai Ying Lee;Tseung-Yuen Tseng.
Journal of Applied Physics (2010)

194 Citations

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Te-Chih Chen;Ting-Chang Chang;Chih-Tsung Tsai;Tien-Yu Hsieh.
Applied Physics Letters (2010)

187 Citations

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Wei-Siang Lu.
Applied Physics Letters (2011)

180 Citations

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)

179 Citations

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Yu Chun Chen;Ting Chang Chang;Hung Wei Li;Shih Ching Chen.
Applied Physics Letters (2010)

176 Citations

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Chih-Tsung Tsai;Ting-Chang Chang;Shih-Ching Chen;Ikai Lo.
Applied Physics Letters (2010)

175 Citations

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