Ting-Chang Chang focuses on Optoelectronics, Thin-film transistor, Resistive random-access memory, Nanotechnology and Dielectric. His research in Optoelectronics is mostly focused on Non-volatile memory. His Thin-film transistor research is multidisciplinary, relying on both Amorphous solid, Stress, Threshold voltage, Transistor and Wide-bandgap semiconductor.
His Resistive random-access memory research incorporates themes from Ion, Thermal conduction, Silicon and Thin film. His Dielectric research is multidisciplinary, incorporating elements of Hydrogen, Analytical chemistry, Photoresist, Passivation and Integrated circuit. The Electrode study which covers Tin that intersects with Resistive touchscreen.
His main research concerns Optoelectronics, Thin-film transistor, Transistor, Resistive random-access memory and Layer. Ting-Chang Chang works mostly in the field of Optoelectronics, limiting it down to topics relating to Threshold voltage and, in certain cases, Gate oxide, as a part of the same area of interest. As part of one scientific family, he deals mainly with the area of Thin-film transistor, narrowing it down to issues related to the Silicon, and often Electronic engineering.
His research in Transistor intersects with topics in Composite material, Condensed matter physics, Logic gate and Leakage. His Resistive random-access memory study deals with Thermal conduction intersecting with Schottky diode. In his study, Chemical engineering and Passivation is inextricably linked to Dielectric, which falls within the broad field of Layer.
Ting-Chang Chang mostly deals with Optoelectronics, Thin-film transistor, Transistor, Threshold voltage and Stress. The various areas that Ting-Chang Chang examines in his Optoelectronics study include Layer, Active layer and Electrode, Resistive random-access memory. His research investigates the link between Electrode and topics such as Tin that cross with problems in Thermal conduction.
His study focuses on the intersection of Thin-film transistor and fields such as Polycrystalline silicon with connections in the field of Silicon. His studies in Transistor integrate themes in fields like Resistor, Capacitance, Logic gate and Leakage. His research integrates issues of Hydrogen, Oxide and Electrical measurements in his study of Threshold voltage.
Ting-Chang Chang mainly focuses on Optoelectronics, Thin-film transistor, Transistor, Threshold voltage and Memristor. Ting-Chang Chang has included themes like Layer, Active layer and Electrode, Resistive random-access memory in his Optoelectronics study. His study in Electrode is interdisciplinary in nature, drawing from both Forming processes and Random access memory.
His Thin-film transistor research includes themes of Annealing, Low-temperature polycrystalline silicon, Polycrystalline silicon, Condensed matter physics and Subthreshold conduction. The study incorporates disciplines such as Neuromorphic engineering, Stress, MNIST database and Dielectric in addition to Transistor. His biological study deals with issues like Silicon, which deal with fields such as Field effect, Intensity, Analytical chemistry and Density of states.
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Developments in nanocrystal memory
Ting-Chang Chang;Fu-Yen Jian;Fu-Yen Jian;Shih-Cheng Chen;Yu-Ting Tsai.
Materials Today (2011)
Resistance random access memory
Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu.
Materials Today (2014)
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang.
Applied Physics Letters (2010)
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze.
Applied Physics Letters (2008)
Multilevel resistive switching in Ti/CuxO/Pt memory devices
Sheng Yu Wang;Chin Wen Huang;Dai Ying Lee;Tseung-Yuen Tseng.
Journal of Applied Physics (2010)
Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
Te-Chih Chen;Ting-Chang Chang;Chih-Tsung Tsai;Tien-Yu Hsieh.
Applied Physics Letters (2010)
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Te-Chih Chen;Ting-Chang Chang;Tien-Yu Hsieh;Wei-Siang Lu.
Applied Physics Letters (2011)
Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)
Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress
Yu Chun Chen;Ting Chang Chang;Hung Wei Li;Shih Ching Chen.
Applied Physics Letters (2010)
Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
Chih-Tsung Tsai;Ting-Chang Chang;Shih-Ching Chen;Ikai Lo.
Applied Physics Letters (2010)
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