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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 52 2495 2391 33 33 339 13066
Materials Science 52 9437 9110 116 115 354 13078

Ming-Jinn Tsai publications per year

The chart shows the history of publications by Ming-Jinn Tsai between 1987 and 2018, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ming-Jinn Tsai published across 32 years, from 1987 to 2018, averaging 11.3 papers a year. Output peaked at 50 publications in 2012. 4 of the 360 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1987 to 2018. Vertical axis: number of publications, 0 to 50. Peak 50 publications in 2012. 1987: 1 publication 1988: 0 publications 1989: 2 publications 1990: 0 publications 1991: 0 publications 1992: 2 publications 1993: 2 publications 1994: 2 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 1 publication 1999: 1 publication 2000: 0 publications 2001: 1 publication 2002: 3 publications 2003: 13 publications 2004: 18 publications 2005: 16 publications 2006: 24 publications 2007: 29 publications 2008: 27 publications 2009: 22 publications 2010: 29 publications 2011: 42 publications 2012: 50 publications 2013: 39 publications 2014: 18 publications 2015: 8 publications 2016: 6 publications 2017: 3 publications 2018: 1 publication
1987 2018

360 publications in total across all disciplines

View publications per year as a table
Ming-Jinn Tsai: publications per year, 1987 to 2018
Year Publications
1987 1
1988 0
1989 2
1990 0
1991 0
1992 2
1993 2
1994 2
1995 0
1996 0
1997 0
1998 1
1999 1
2000 0
2001 1
2002 3
2003 13
2004 18
2005 16
2006 24
2007 29
2008 27
2009 22
2010 29
2011 42
2012 50
2013 39
2014 18
2015 8
2016 6
2017 3
2018 1
Total 360
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Ming-Jinn Tsai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ming-Jinn Tsai sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 339 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 339
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Ming-Jinn Tsai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ming-Jinn Tsai sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 52 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108 52
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Ming-Jinn Tsai is affiliated with the Industrial Technology Research Institute in Taiwan. The scientist's work is anchored within this prominent research organization, contributing to its focus on applied scientific and technological advancements.

There are no records available of recent papers, co-authors, frequent publication venues, or book publications connected with Ming-Jinn Tsai. Similarly, specific main fields of study, subfields, and main topics of work have not been documented in the accessible data.

Likewise, there is no information about awards or distinctions received. The absence of detailed publication and thematic data makes it difficult to specify the particular research areas or contributions in scientific literature.

The career profile of Ming-Jinn Tsai is thus primarily identified through the association with the Industrial Technology Research Institute in Taiwan, suggesting involvement in research and development activities at that institution.

Best Publications

  • Metal–Oxide RRAM

    H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen

  • Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

    H.Y. Lee;P.S. Chen;T.Y. Wu;Y.S. Chen

  • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

    Wen-Yuan Chang;Yen-Chao Lai;Tai-Bor Wu;Sea-Fue Wang

  • A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

    Shyh-Shyuan Sheu;Meng-Fan Chang;Ku-Feng Lin;Che-Wei Wu

  • Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance

    H. Y. Lee;Y. S. Chen;P. S. Chen;P. Y. Gu

  • Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

    Y. S. Chen;H. Y. Lee;P. S. Chen;P. Y. Gu

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

    Chang-Po Hsiung;Hsin-Wei Liao;Jon-Yiew Gan;Tai-Bo Wu

  • Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

    Wen-Yuan Chang;Kai-Jung Cheng;Jui-Ming Tsai;Hung-Jen Chen

  • A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

    Shyh-Shyuan Sheu;Pei-Chia Chiang;Wen-Pin Lin;Heng-Yuan Lee

  • Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

    Kin-Fu Kao;Chain-Ming Lee;Ming-Jung Chen;Ming-Jinn Tsai

  • Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

    Heng-Yuan Lee;Pang-Shiu Chen;Ching-Chiun Wang;Siddheswar Maikap

  • Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications

    Pi-Feng Chiu;Meng-Fan Chang;Che-Wei Wu;Ching-Hao Chuang

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

    M. H. Lee;Y.-T. Wei;K.-Y. Chu;J.-J. Huang

  • An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

    Yu-Sheng Chen;Heng-Yuan Lee;Pang-Shiu Chen;Tai-Yuan Wu

  • Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

    S. Maikap;H. Y. Lee;T.-Y. Wang;P.-J. Tzeng

  • High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

    Wen Chao Shen;Chin Yu Mei;Y.-D. Chih;Shyh-Shyuan Sheu

  • Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure

    Der-Sheng Chao;Hong-Hui Hsu;Ming-Jung Chen;Yi-Chan Chen

  • Fast-Write Resistive RAM (RRAM) for Embedded Applications

    Shyh-Shyuan Sheu;Kuo-Hsing Cheng;Meng-Fan Chang;Pei-Chia Chiang

Frequent Co-Authors

Frederick T. Chen
Frederick T. Chen ITRI International
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Ya-Chin King
Ya-Chin King National Tsing Hua University
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Chao-Sung Lai
Chao-Sung Lai National Yang Ming Chiao Tung University
Chee Wee Liu
Chee Wee Liu National Taiwan University
Chih-I Wu
Chih-I Wu National Taiwan University

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