World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
13066
World Ranking
2495
National Ranking
33

Materials Science

D-Index
52
Citations
13078
World Ranking
9439
National Ranking
115

Overview

Ming-Jinn Tsai is affiliated with the Industrial Technology Research Institute in Taiwan. The scientist's work is anchored within this prominent research organization, contributing to its focus on applied scientific and technological advancements.

There are no records available of recent papers, co-authors, frequent publication venues, or book publications connected with Ming-Jinn Tsai. Similarly, specific main fields of study, subfields, and main topics of work have not been documented in the accessible data.

Likewise, there is no information about awards or distinctions received. The absence of detailed publication and thematic data makes it difficult to specify the particular research areas or contributions in scientific literature.

The career profile of Ming-Jinn Tsai is thus primarily identified through the association with the Industrial Technology Research Institute in Taiwan, suggesting involvement in research and development activities at that institution.

Best Publications

  • Metal–Oxide RRAM

    H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen

  • Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

    H.Y. Lee;P.S. Chen;T.Y. Wu;Y.S. Chen

  • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

    Wen-Yuan Chang;Yen-Chao Lai;Tai-Bor Wu;Sea-Fue Wang

  • A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability

    Shyh-Shyuan Sheu;Meng-Fan Chang;Ku-Feng Lin;Che-Wei Wu

  • Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance

    H. Y. Lee;Y. S. Chen;P. S. Chen;P. Y. Gu

  • Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

    Y. S. Chen;H. Y. Lee;P. S. Chen;P. Y. Gu

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

    Chang-Po Hsiung;Hsin-Wei Liao;Jon-Yiew Gan;Tai-Bo Wu

  • Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

    Wen-Yuan Chang;Kai-Jung Cheng;Jui-Ming Tsai;Hung-Jen Chen

  • A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme

    Shyh-Shyuan Sheu;Pei-Chia Chiang;Wen-Pin Lin;Heng-Yuan Lee

  • Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

    Kin-Fu Kao;Chain-Ming Lee;Ming-Jung Chen;Ming-Jinn Tsai

  • Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

    Heng-Yuan Lee;Pang-Shiu Chen;Ching-Chiun Wang;Siddheswar Maikap

  • Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications

    Pi-Feng Chiu;Meng-Fan Chang;Che-Wei Wu;Ching-Hao Chuang

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

    M. H. Lee;Y.-T. Wei;K.-Y. Chu;J.-J. Huang

  • An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

    Yu-Sheng Chen;Heng-Yuan Lee;Pang-Shiu Chen;Tai-Yuan Wu

  • Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

    S. Maikap;H. Y. Lee;T.-Y. Wang;P.-J. Tzeng

  • High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

    Wen Chao Shen;Chin Yu Mei;Y.-D. Chih;Shyh-Shyuan Sheu

  • Low Programming Current Phase Change Memory Cell with Double GST Thermally Confined Structure

    Der-Sheng Chao;Hong-Hui Hsu;Ming-Jung Chen;Yi-Chan Chen

  • Fast-Write Resistive RAM (RRAM) for Embedded Applications

    Shyh-Shyuan Sheu;Kuo-Hsing Cheng;Meng-Fan Chang;Pei-Chia Chiang

Frequent Co-Authors

Frederick T. Chen
Frederick T. Chen ITRI International
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Ya-Chin King
Ya-Chin King National Tsing Hua University
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Chao-Sung Lai
Chao-Sung Lai National Yang Ming Chiao Tung University
Chee Wee Liu
Chee Wee Liu National Taiwan University
Chih-I Wu
Chih-I Wu National Taiwan University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those pursuing Electronics and Electrical Engineering, exploring colleges for military spouses can open doors to flexible and supportive learning environments. These programs often accommodate unique scheduling needs, which is crucial for balancing studies with personal responsibilities.

Many students prefer the convenience of programs with fast entry options. Online colleges that start immediately provide the ability to begin coursework without long wait times, helping learners accelerate their education and quickly advance toward career goals.

In addition to full degrees, short-term education can offer swift entrance into the workforce. Exploring short certificate programs that pay well online can be a strategic move, providing targeted skills that boost employability in niche electrical and electronics roles.

For students who value quieter work environments, identifying jobs for introverts that pay well within the engineering field can lead to fulfilling careers. Many technical and engineering positions offer excellent opportunities that align with introverted work styles.

Best Scientists Citing Ming-Jinn Tsai

Trending Scientists

Recently Published Articles