What is he best known for?
The fields of study he is best known for:
- Electrical engineering
- Integrated circuit
- Transistor
Ming-Jinn Tsai spends much of his time researching Resistive random-access memory, Optoelectronics, Non-volatile memory, Electrical engineering and Thin film.
His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Oxide, Electronic engineering, Memristor and Resistive touchscreen.
His biological study spans a wide range of topics, including Switching time and Phase-change memory.
His research integrates issues of Tin, Anode and Resistive switching in his study of Optoelectronics.
The concepts of his Non-volatile memory study are interwoven with issues in Biasing and Memory cell.
His Electrical engineering research incorporates elements of Annealing and Low-power electronics.
His most cited work include:
- Metal–Oxide RRAM (1562 citations)
- Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (495 citations)
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications (380 citations)
What are the main themes of his work throughout his whole career to date?
Ming-Jinn Tsai mostly deals with Optoelectronics, Resistive random-access memory, Electrical engineering, Non-volatile memory and Electronic engineering.
The study incorporates disciplines such as Layer, Nanotechnology, Resistive switching, Voltage and Tin in addition to Optoelectronics.
His Resistive random-access memory research is multidisciplinary, incorporating perspectives in Oxide, Thin film, Thermal conduction, CMOS and Resistive touchscreen.
His Electrical engineering research is multidisciplinary, incorporating elements of Power and Low-power electronics.
His biological study spans a wide range of topics, including Capacitor, Flash memory and Integrated circuit.
His Electronic engineering research integrates issues from Magnetoresistive random-access memory and Phase-change memory.
He most often published in these fields:
- Optoelectronics (56.09%)
- Resistive random-access memory (36.16%)
- Electrical engineering (26.20%)
What were the highlights of his more recent work (between 2012-2018)?
- Optoelectronics (56.09%)
- Resistive random-access memory (36.16%)
- Electrical engineering (26.20%)
In recent papers he was focusing on the following fields of study:
His primary areas of study are Optoelectronics, Resistive random-access memory, Electrical engineering, Non-volatile memory and Electronic engineering.
His Optoelectronics study incorporates themes from Layer, Nanotechnology, Resistive switching, Forming processes and Tin.
He combines subjects such as Random access memory, Oxide, CMOS and Resistive touchscreen with his study of Resistive random-access memory.
His work on Resistive switching memory, Transmission and Breakdown voltage as part of general Electrical engineering research is often related to High density and Good memory, thus linking different fields of science.
His studies deal with areas such as Dielectric, Semiconductor memory, Flash memory and Static random-access memory as well as Non-volatile memory.
Ming-Jinn Tsai interconnects Normally off and Access time in the investigation of issues within Electronic engineering.
Between 2012 and 2018, his most popular works were:
- Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics (89 citations)
- Atomic-level quantized reaction of HfOx memristor (78 citations)
- A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes (56 citations)
In his most recent research, the most cited papers focused on:
- Electrical engineering
- Integrated circuit
- Transistor
The scientist’s investigation covers issues in Resistive random-access memory, Optoelectronics, Electronic engineering, Non-volatile memory and Tin.
Resistive random-access memory is the subject of his research, which falls under Voltage.
His Optoelectronics study combines topics from a wide range of disciplines, such as Layer, Nanotechnology, Resistive switching, Forming processes and Electrical resistivity and conductivity.
The various areas that Ming-Jinn Tsai examines in his Electronic engineering study include Normally off and Parasitic load.
His work deals with themes such as Microcontroller, Semiconductor memory, Flash memory and Ferroelectric RAM, which intersect with Non-volatile memory.
Ming-Jinn Tsai has included themes like Gallium oxide, Limiting oxygen concentration, Electrical engineering and X-ray photoelectron spectroscopy in his Tin study.
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