Ming-Jinn Tsai spends much of his time researching Resistive random-access memory, Optoelectronics, Non-volatile memory, Electrical engineering and Thin film. His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Oxide, Electronic engineering, Memristor and Resistive touchscreen. His biological study spans a wide range of topics, including Switching time and Phase-change memory.
His research integrates issues of Tin, Anode and Resistive switching in his study of Optoelectronics. The concepts of his Non-volatile memory study are interwoven with issues in Biasing and Memory cell. His Electrical engineering research incorporates elements of Annealing and Low-power electronics.
Ming-Jinn Tsai mostly deals with Optoelectronics, Resistive random-access memory, Electrical engineering, Non-volatile memory and Electronic engineering. The study incorporates disciplines such as Layer, Nanotechnology, Resistive switching, Voltage and Tin in addition to Optoelectronics. His Resistive random-access memory research is multidisciplinary, incorporating perspectives in Oxide, Thin film, Thermal conduction, CMOS and Resistive touchscreen.
His Electrical engineering research is multidisciplinary, incorporating elements of Power and Low-power electronics. His biological study spans a wide range of topics, including Capacitor, Flash memory and Integrated circuit. His Electronic engineering research integrates issues from Magnetoresistive random-access memory and Phase-change memory.
His primary areas of study are Optoelectronics, Resistive random-access memory, Electrical engineering, Non-volatile memory and Electronic engineering. His Optoelectronics study incorporates themes from Layer, Nanotechnology, Resistive switching, Forming processes and Tin. He combines subjects such as Random access memory, Oxide, CMOS and Resistive touchscreen with his study of Resistive random-access memory.
His work on Resistive switching memory, Transmission and Breakdown voltage as part of general Electrical engineering research is often related to High density and Good memory, thus linking different fields of science. His studies deal with areas such as Dielectric, Semiconductor memory, Flash memory and Static random-access memory as well as Non-volatile memory. Ming-Jinn Tsai interconnects Normally off and Access time in the investigation of issues within Electronic engineering.
The scientist’s investigation covers issues in Resistive random-access memory, Optoelectronics, Electronic engineering, Non-volatile memory and Tin. Resistive random-access memory is the subject of his research, which falls under Voltage. His Optoelectronics study combines topics from a wide range of disciplines, such as Layer, Nanotechnology, Resistive switching, Forming processes and Electrical resistivity and conductivity.
The various areas that Ming-Jinn Tsai examines in his Electronic engineering study include Normally off and Parasitic load. His work deals with themes such as Microcontroller, Semiconductor memory, Flash memory and Ferroelectric RAM, which intersect with Non-volatile memory. Ming-Jinn Tsai has included themes like Gallium oxide, Limiting oxygen concentration, Electrical engineering and X-ray photoelectron spectroscopy in his Tin study.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen.
Proceedings of the IEEE (2012)
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
H.Y. Lee;P.S. Chen;T.Y. Wu;Y.S. Chen.
international electron devices meeting (2008)
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
Wen-Yuan Chang;Yen-Chao Lai;Tai-Bor Wu;Sea-Fue Wang.
Applied Physics Letters (2008)
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability
Shyh-Shyuan Sheu;Meng-Fan Chang;Ku-Feng Lin;Che-Wei Wu.
international solid-state circuits conference (2011)
Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
Y. S. Chen;H. Y. Lee;P. S. Chen;P. Y. Gu.
international electron devices meeting (2009)
Evidence and solution of over-RESET problem for HfO X based resistive memory with sub-ns switching speed and high endurance
H. Y. Lee;Y. S. Chen;P. S. Chen;P. Y. Gu.
international electron devices meeting (2010)
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang.
Applied Physics Letters (2010)
Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
Chang-Po Hsiung;Hsin-Wei Liao;Jon-Yiew Gan;Tai-Bo Wu.
ACS Nano (2010)
Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory
Kin-Fu Kao;Chain-Ming Lee;Ming-Jung Chen;Ming-Jinn Tsai.
Advanced Materials (2009)
A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme
Shyh-Shyuan Sheu;Pei-Chia Chiang;Wen-Pin Lin;Heng-Yuan Lee.
symposium on vlsi circuits (2009)
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