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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
75
Citations
17647
World Ranking
691
National Ranking
109

Materials Science

D-Index
75
Citations
17670
World Ranking
3506
National Ranking
1122

Overview

Shibing Long is affiliated with the University of Science and Technology of China. Their research focuses primarily on the fields of Physics and Astronomy as well as Engineering. Within these areas, their work delves into subfields such as Atomic and Molecular Physics, and Optics along with Electrical and Electronic Engineering.

The main topics of Shibing Long's research include Solid State Laser Technologies, Advanced Fiber Laser Technologies, and Photorefractive and Nonlinear Optics. These topics reflect a specialization in laser physics and related optical technologies.

The scientific contributions of Shibing Long are documented in their published works, including:

  • Diode-end-pumped Nd:YAG crystal fiber for high-power and high-energy 1.3-μm laser generation, 2025, Optics Communications

Frequent collaborators in Shibing Long's research include Degui Wang, Xiaofeng Rong, Wentao Liang, Zhihai Sun, and Wenwu Li, indicating active joint work in related scientific studies.

Their publications have appeared in venues such as Optics Communications, highlighting peer-reviewed dissemination of their research in recognized scientific journals within the optics and photonics communities.

Best Publications

  • Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

    Qi Liu;Jun Sun;Hangbing Lv;Shibing Long

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

    Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang

  • Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

    Weihua Guan;Shibing Long;Qi Liu;Ming Liu

  • Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu;Weihua Guan;Shibing Long;Rui Jia

  • An Artificial Neuron Based on a Threshold Switching Memristor

    Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao

  • Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

    Yan Wang;Qi Liu;Shibing Long;Wei Wang

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

    Unknown

  • Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions

    Qi Liu;Shibing Long;Wei Wang;Qingyun Zuo

  • Bidirectional photocurrent in p–n heterojunction nanowires

    Danhao Wang;Xin Liu;Yang Kang;Xiaoning Wang

  • On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

    Weihua Guan;Ming Liu;Shibing Long;Qi Liu

  • An Overview of the Ultrawide Bandgap Ga 2 O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

    HuiWen Xue;HuiWen Xue;QiMing He;GuangZhong Jian;ShiBing Long

  • Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

    Weihua Guan;Shibing Long;Rui Jia;Ming Liu

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

    Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu

  • Light-Gated Memristor with Integrated Logic and Memory Functions

    Hongwei Tan;Gang Liu;Huali Yang;Xiaohui Yi

  • Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

    Yuan Qin;Liheng Li;Xiaolong Zhao;Gary S. Tompa

  • Graphene and Related Materials for Resistive Random Access Memories

    Fei Hui;Enric Grustan-Gutierrez;Shibing Long;Qi Liu

  • Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

    Yingtao Li;Shibing Long;Manhong Zhang;Qi Liu

  • Quantum-size effects in hafnium-oxide resistive switching

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
Ling Li
Ling Li Chinese Academy of Sciences
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Hongtao Liu
Hongtao Liu Central South University
Jing Liu
Jing Liu Chinese Academy of Sciences
Xutang Tao
Xutang Tao Shandong University
Rajeev Ahuja
Rajeev Ahuja Uppsala University

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