D-Index & Metrics Best Publications

Home
Best Scientists - Electronics and Electrical Engineering
Shibing Long

Shibing Long

University of Science and Technology of China
China

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 57 Citations 11,102 314 World Ranking 1186 National Ranking 141

Materials Science D-index 57 Citations 10,901 286 World Ranking 5121 National Ranking 1283

Overview

What is he best known for?

The fields of study Shibing Long is best known for:

Semiconductor
Electron
Ion

His Optoelectronics study frequently links to other fields, such as Non-volatile memory, Doping and Semiconductor. He conducts interdisciplinary study in the fields of Non-volatile memory and Resistive random-access memory through his works. His Doping study frequently involves adjacent topics like Optoelectronics. Many of his studies involve connections with topics such as Electrical conductor, Protein filament and Layer (electronics) and Composite material. His work in Layer (electronics) is not limited to one particular discipline; it also encompasses Composite material. His work often combines Nanotechnology and Transmission electron microscopy studies. His work on Electrical engineering is being expanded to include thematically relevant topics such as Electrical resistivity and conductivity. His Electrical resistivity and conductivity study frequently draws connections between related disciplines such as Electrical engineering. His Voltage study frequently draws connections to other fields, such as Resistive random-access memory.

His most cited work include:

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM (477 citations)
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode (395 citations)
Recommended Methods to Study Resistive Switching Devices (375 citations)

What are the main themes of his work throughout his whole career to date

In the subject of Composite material, Shibing Long integrates adjacent academic fields such as Electrical conductor and Protein filament. His studies link Composite material with Electrical conductor. Shibing Long performs multidisciplinary study in the fields of Optoelectronics and Photodetector via his papers. In his research, Shibing Long undertakes multidisciplinary study on Photodetector and Optoelectronics. His study connects Resistive touchscreen and Electrical engineering. As part of his studies on Nanotechnology, Shibing Long often connects relevant areas like Layer (electronics). Much of his study explores Layer (electronics) relationship to Nanotechnology. His Resistive random-access memory research extends to the thematically linked field of Voltage. Resistive random-access memory and Voltage are frequently intertwined in his study.

Shibing Long most often published in these fields:

Optoelectronics (83.54%)
Electrical engineering (53.80%)
Nanotechnology (46.84%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

Qi Liu;Jun Sun;Hangbing Lv;Shibing Long.
Advanced Materials (2012)

565 Citations

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang.
ACS Nano (2010)

440 Citations

Recommended Methods to Study Resistive Switching Devices

Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)

363 Citations

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

Weihua Guan;Shibing Long;Qi Liu;Ming Liu.
IEEE Electron Device Letters (2008)

357 Citations

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications

Yan Wang;Qi Liu;Shibing Long;Wei Wang.
Nanotechnology (2010)

340 Citations

Resistive switching memory effect of ZrO2 films with Zr+ implanted

Qi Liu;Weihua Guan;Shibing Long;Rui Jia.
Applied Physics Letters (2008)

338 Citations

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions

Qi Liu;Shibing Long;Wei Wang;Qingyun Zuo.
IEEE Electron Device Letters (2009)

284 Citations

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Haitao Sun;Qi Liu;Congfei Li;Shibing Long.
Advanced Functional Materials (2014)

266 Citations

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

Weihua Guan;Ming Liu;Shibing Long;Qi Liu.
Applied Physics Letters (2008)

263 Citations

Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Weihua Guan;Shibing Long;Rui Jia;Ming Liu.
Applied Physics Letters (2007)

238 Citations

If you think any of the details on this page are incorrect, let us know.

Shibing Long

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Overview

What is he best known for?

The fields of study Shibing Long is best known for:

His most cited work include:

What are the main themes of his work throughout his whole career to date

Shibing Long most often published in these fields:

Best Publications

Report an issue

Frequent Co-Authors

Best Scientists Citing Shibing Long

Trending Scientists