World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
6524
World Ranking
3956
National Ranking
129

Overview

Sungjun Kim is affiliated with Dongguk University in South Korea and conducts research primarily within the fields of Engineering and Neuroscience. Their work spans numerous subfields, notably Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Artificial Intelligence, Cognitive Neuroscience, and Polymers and Plastics.

The scientist's research focus areas include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Neural Networks and Reservoir Computing, Neural dynamics and brain function, Photoreceptor and optogenetics research, and Semiconductor materials and devices.

Frequent collaboration partners for Sungjun Kim include Chandreswar Mahata, Muhammad Ismail, Dongyeol Ju, Kyobum Kim, and Seongjae Cho.

Their publications are often found in several key academic venues, including the Journal of Alloys and Compounds, Nanomaterials, Materials, Applied Surface Science, and Metals.

Selected recent papers authored or co-authored by Sungjun Kim include:

  • "Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition," 2020, Nature Communications
  • "Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing," 2021, Journal of Material Science and Technology
  • "Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse," 2021, Journal of Alloys and Compounds
  • "Ferroelectric polymer-based artificial synapse for neuromorphic computing," 2020, Nanoscale Horizons
  • "Dual delivery of stem cells and insulin-like growth factor-1 in coacervate-embedded composite hydrogels for enhanced cartilage regeneration in osteochondral defects," 2020, Journal of Controlled Release

Best Publications

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    Sungjun Kim;Hyungjin Kim;Sungmin Hwang;Min-Hwi Kim

  • Differences in the Electrochemical Performance of Pt-Based Catalysts Used for Polymer Electrolyte Membrane Fuel Cells in Liquid Half- and Full-Cells.

    Chi-Yeong Ahn;Ji Eun Park;Sungjun Kim;Ok-Hee Kim

  • Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications

    Chandreswar Mahata;Hassan Algadi;Jaehong Lee;Sungjun Kim

  • Soft-template synthesis of mesoporous non-precious metal catalyst with Fe-N-X/C active sites for oxygen reduction reaction in fuel cells

    Yeongdong Mun;Min Jeong Kim;Shin-Ae Park;Eunsung Lee

  • Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho

  • Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    Sungjun Kim;Jia Chen;Ying-Chen Chen;Min-Hwi Kim

  • Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

    Muhammad Ismail;Umesh Chand;Chandreswar Mahata;Jamel Nebhen

  • Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Ying-Chen Chen

  • Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

    Muhammad Ismail;Chandreswar Mahata;Sungjun Kim

  • A novel filter design for suppression of high voltage gradient in voltage-fed PWM inverter

    Sung-Jun Kim;Seung-Ki Sul

  • Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode.

    Chandreswar Mahata;Myounggon Kang;Sungjun Kim

  • Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

    Muhammad Ismail;Haider Abbas;Changhwan Choi;Sungjun Kim

  • Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application

    Ji-Ho Ryu;Chandreswar Mahata;Sungjun Kim

  • Tunable Synaptic Characteristics of a Ti/TiO 2 /Si Memory Device for Reservoir Computing.

    Jinwoong Yang;Hyojong Cho;Hojeong Ryu;Muhammad Ismail

  • Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

    Sungjun Kim;Byung-Gook Park

  • Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

    Mehr Khalid Rahmani;Muhammad Ismail;Chandreswar Mahata;Sungjun Kim

  • Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.

    Jinju Lee;Ji Ho Ryu;Boram Kim;Fayyaz Hussain

  • Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing

    Ji-Ho Ryu;Sungjun Kim

  • Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

    Chandreswar Mahata;Changmin Lee;Youngseo An;Min-Hwi Kim

  • Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

    Ji Ho Ryu;Fayyaz Hussain;Chandreswar Mahata;Muhammad Ismail

  • Investigations of structural, electronic and optical properties of YInO3 (Y = Rb, Cs, Fr) perovskite oxides using mBJ approximation for optoelectronic applications: A first principles study

    Muhammad Iqbal Hussain;Muhammad Iqbal Hussain;R.M. Arif Khalil;Fayyaz Hussain;Muhammad Imran

  • Investigations of structural, electronic and optical properties of TM-GaO 3 (TM = Sc, Ti, Ag) perovskite oxides for optoelectronic applications: a first principles study

    Muhammad Iqbal Hussain;Muhammad Iqbal Hussain;R M Arif Khalil;Fayyaz Hussain;Muhammad Imran

  • Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device.

    Hojeong Ryu;Sungjun Kim

  • High-performance Fuel Cell with Stretched Catalyst-Coated Membrane: One-step Formation of Cracked Electrode.

    Sang Moon Kim;Chi-Yeong Ahn;Yong-Hun Cho;Sungjun Kim

Frequent Co-Authors

Byung-Gook Park
Byung-Gook Park Seoul National University
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Yung-Eun Sung
Yung-Eun Sung Seoul National University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Hyungcheol Shin
Hyungcheol Shin Seoul National University
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Sung Jong Yoo
Sung Jong Yoo Korea Institute of Science and Technology
Jong-Chan Lee
Jong-Chan Lee Seoul National University
Dinghua Bao
Dinghua Bao Sun Yat-sen University

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