World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 43 3956 3798 129 127 279 6524

Sungjun Kim publications per year

The chart shows the history of publications by Sungjun Kim between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sungjun Kim published across 29 years, from 1997 to 2025, averaging 16.3 papers a year. Output peaked at 79 publications in 2024. 141 of the 472 publications appeared in the last two years.

No. of publications
25 50 75
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 79. Peak 79 publications in 2024. 1997: 2 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 2 publications 2003: 0 publications 2004: 2 publications 2005: 2 publications 2006: 2 publications 2007: 5 publications 2008: 5 publications 2009: 2 publications 2010: 2 publications 2011: 2 publications 2012: 7 publications 2013: 4 publications 2014: 10 publications 2015: 7 publications 2016: 11 publications 2017: 20 publications 2018: 18 publications 2019: 21 publications 2020: 52 publications 2021: 49 publications 2022: 49 publications 2023: 57 publications 2024: 79 publications 2025: 62 publications
1997 2025

472 publications in total across all disciplines

View publications per year as a table
Sungjun Kim: publications per year, 1997 to 2025
Year Publications
1997 2
1998 0
1999 0
2000 0
2001 0
2002 2
2003 0
2004 2
2005 2
2006 2
2007 5
2008 5
2009 2
2010 2
2011 2
2012 7
2013 4
2014 10
2015 7
2016 11
2017 20
2018 18
2019 21
2020 52
2021 49
2022 49
2023 57
2024 79
2025 62
Total 472
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Sungjun Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sungjun Kim sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 279 publications — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 279
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Sungjun Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sungjun Kim sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 43 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201 43
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Sungjun Kim is affiliated with Dongguk University in South Korea and conducts research primarily within the fields of Engineering and Neuroscience. Their work spans numerous subfields, notably Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, Artificial Intelligence, Cognitive Neuroscience, and Polymers and Plastics.

The scientist's research focus areas include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Neural Networks and Reservoir Computing, Neural dynamics and brain function, Photoreceptor and optogenetics research, and Semiconductor materials and devices.

Frequent collaboration partners for Sungjun Kim include Chandreswar Mahata, Muhammad Ismail, Dongyeol Ju, Kyobum Kim, and Seongjae Cho.

Their publications are often found in several key academic venues, including the Journal of Alloys and Compounds, Nanomaterials, Materials, Applied Surface Science, and Metals.

Selected recent papers authored or co-authored by Sungjun Kim include:

  • "Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition," 2020, Nature Communications
  • "Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing," 2021, Journal of Material Science and Technology
  • "Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse," 2021, Journal of Alloys and Compounds
  • "Ferroelectric polymer-based artificial synapse for neuromorphic computing," 2020, Nanoscale Horizons
  • "Dual delivery of stem cells and insulin-like growth factor-1 in coacervate-embedded composite hydrogels for enhanced cartilage regeneration in osteochondral defects," 2020, Journal of Controlled Release

Best Publications

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    Sungjun Kim;Hyungjin Kim;Sungmin Hwang;Min-Hwi Kim

  • Differences in the Electrochemical Performance of Pt-Based Catalysts Used for Polymer Electrolyte Membrane Fuel Cells in Liquid Half- and Full-Cells.

    Chi-Yeong Ahn;Ji Eun Park;Sungjun Kim;Ok-Hee Kim

  • Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications

    Chandreswar Mahata;Hassan Algadi;Jaehong Lee;Sungjun Kim

  • Soft-template synthesis of mesoporous non-precious metal catalyst with Fe-N-X/C active sites for oxygen reduction reaction in fuel cells

    Yeongdong Mun;Min Jeong Kim;Shin-Ae Park;Eunsung Lee

  • Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho

  • Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    Sungjun Kim;Jia Chen;Ying-Chen Chen;Min-Hwi Kim

  • Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

    Muhammad Ismail;Umesh Chand;Chandreswar Mahata;Jamel Nebhen

  • Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Ying-Chen Chen

  • Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

    Muhammad Ismail;Chandreswar Mahata;Sungjun Kim

  • A novel filter design for suppression of high voltage gradient in voltage-fed PWM inverter

    Sung-Jun Kim;Seung-Ki Sul

  • Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode.

    Chandreswar Mahata;Myounggon Kang;Sungjun Kim

  • Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems

    Muhammad Ismail;Haider Abbas;Changhwan Choi;Sungjun Kim

  • Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application

    Ji-Ho Ryu;Chandreswar Mahata;Sungjun Kim

  • Tunable Synaptic Characteristics of a Ti/TiO 2 /Si Memory Device for Reservoir Computing.

    Jinwoong Yang;Hyojong Cho;Hojeong Ryu;Muhammad Ismail

  • Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

    Sungjun Kim;Byung-Gook Park

  • Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

    Mehr Khalid Rahmani;Muhammad Ismail;Chandreswar Mahata;Sungjun Kim

  • Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.

    Jinju Lee;Ji Ho Ryu;Boram Kim;Fayyaz Hussain

  • Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing

    Ji-Ho Ryu;Sungjun Kim

  • Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

    Chandreswar Mahata;Changmin Lee;Youngseo An;Min-Hwi Kim

  • Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

    Ji Ho Ryu;Fayyaz Hussain;Chandreswar Mahata;Muhammad Ismail

  • Investigations of structural, electronic and optical properties of YInO3 (Y = Rb, Cs, Fr) perovskite oxides using mBJ approximation for optoelectronic applications: A first principles study

    Muhammad Iqbal Hussain;Muhammad Iqbal Hussain;R.M. Arif Khalil;Fayyaz Hussain;Muhammad Imran

  • Investigations of structural, electronic and optical properties of TM-GaO 3 (TM = Sc, Ti, Ag) perovskite oxides for optoelectronic applications: a first principles study

    Muhammad Iqbal Hussain;Muhammad Iqbal Hussain;R M Arif Khalil;Fayyaz Hussain;Muhammad Imran

  • Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device.

    Hojeong Ryu;Sungjun Kim

  • High-performance Fuel Cell with Stretched Catalyst-Coated Membrane: One-step Formation of Cracked Electrode.

    Sang Moon Kim;Chi-Yeong Ahn;Yong-Hun Cho;Sungjun Kim

Frequent Co-Authors

Byung-Gook Park
Byung-Gook Park Seoul National University
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Yung-Eun Sung
Yung-Eun Sung Seoul National University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Mansoo Choi
Mansoo Choi Seoul National University
Hyungcheol Shin
Hyungcheol Shin Seoul National University
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Sung Jong Yoo
Sung Jong Yoo Korea Institute of Science and Technology
Jong-Chan Lee
Jong-Chan Lee Seoul National University

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