World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6679
World Ranking
4497
National Ranking
153

Overview

Hyungcheol Shin is affiliated with Seoul National University in South Korea, specializing in research related to semiconductor devices and advanced memory technologies. Their scholarly output encompasses numerous publications primarily in engineering and computer science fields, with a focus on electrical and electronic engineering.

Their research covers several main topics including:

  • Advanced Data Storage Technologies
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Cellular Automata and Applications

Hyungcheol Shin's work has been published predominantly in the following venues:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Japanese Journal of Applied Physics
  • IEICE Electronics Express
  • JSTS Journal of Semiconductor Technology and Science

Among their notable recent papers are:

  • "Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories" (2020, IEEE Transactions on Electron Devices)
  • "Variability-Aware Machine Learning Strategy for 3-D NAND Flash Memories" (2020, IEEE Transactions on Electron Devices)
  • "Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash Memories" (2022, IEEE Transactions on Electron Devices)
  • "Investigation and Compact Modeling of Hot-Carrier Injection for Read Disturbance in 3-D NAND Flash Memory" (2020, IEEE Transactions on Electron Devices)
  • "Prediction of Random Grain Boundary Variation Effect of 3-D NAND Flash Memory Using a Machine Learning Approach" (2021, IEEE Transactions on Electron Devices)

The scientist frequently collaborates with peers including Hyungjun Jo, Jang-Kyu Lee, Sangmin Ahn, Haechan Choi, and Jinil Yoo. These co-authors represent recurring partnerships in research publications, contributing to the body of work primarily focused on NAND flash memory technologies and semiconductor device innovations.

Hyungcheol Shin's research integrates advanced computational techniques such as machine learning within the semiconductor domain, particularly investigating variations and failure mechanisms in 3-D NAND flash memories. Their contributions span from applied device characterization to modeling physical effects impacting memory reliability and performance.

The breadth of their scholarly production includes 52 publications in engineering and 32 in computer science, underscoring interdisciplinary approaches bridging hardware architectures and computational theory. Their subfields extend to computer networks and communications, computational mathematics, and atomic and molecular physics related to semiconductor applications.

Best Publications

  • Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

    Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim

  • Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

    Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim

  • A simple and analytical parameter-extraction method of a microwave MOSFET

    Ickjin Kwon;Minkyu Je;Kwyro Lee;Hyungcheol Shin

  • A simple wide-band on-chip inductor model for silicon-based RF ICs

    J. Gil;Hyungcheol Shin

  • Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

    B. H. Choi;S. W. Hwang;I. G. Kim;H. C. Shin

  • Thin oxide charging current during plasma etching of aluminum

    H. Shin;C.-C. King;T. Horiuchi;T. Horiuchi;C. Hu

  • Flash memory element and manufacturing method

    Lee Jong Ho;Shin Hyeong Cheol

  • Thin gate oxide damage due to plasma processing

    H C Shin;H C Shin;Chenming Hu

  • Analytical drain thermal noise current model valid for deep submicron MOSFETs

    Kwangseok Han;Hyungcheol Shin;Kwyro Lee

  • A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

    Hoon Jeong;Ki-Whan Song;Il Han Park;Tae-Hun Kim

  • Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

    Tae Hun Kim;Il Han Park;Jong Duk Lee;Hyung Cheol Shin

  • Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

    Kwangseok Han;J. Gil;Seong-Sik Song;Jeonghu Han

  • Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

    In Man Kang;Hyungcheol Shin

  • Room temperature single electron effects in a Si nano-crystal memory

    Ilgweon Kim;Sangyeon Han;Kwangseok Han;Jongho Lee

  • Low noise capacitive sensor for multi-touch mobile handset's applications

    Seunghoon Ko;Hyungcheol Shin;Jaemin Lee;Hongjae Jang

  • Plasma etching charge-up damage to thin oxides

    Hyungcheol Shin;Neeta Jha;Qian Xue-Yu;Graham W. Hills

  • A simple parameter extraction method of spiral on-chip inductors

    M. Kang;J. Gil;Hyungcheol Shin

  • Modeling oxide thickness dependence of charging damage by plasma processing

    H. Shin;K. Noguchi;C. Hu

  • Characteristics of p-channel Si nano-crystal memory

    Kwangseok Han;Ilgweon Kim;Hyungcheol Shin

  • Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

    Sanghoon Lee;Heung-Jae Cho;Younghwan Son;Dong Seup Lee

  • A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

    Hyungcheol Shin;Seunghoon Ko;Hongjae Jang;Ilhyun Yun

Frequent Co-Authors

Byung-Gook Park
Byung-Gook Park Seoul National University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Minkyu Je
Minkyu Je Korea Advanced Institute of Science and Technology
Kwyro Lee
Kwyro Lee Korea Advanced Institute of Science and Technology
Chenming Hu
Chenming Hu University of California, Berkeley
Dong-Won Kim
Dong-Won Kim Hanyang University
Sungjun Kim
Sungjun Kim Dongguk University
Euisik Yoon
Euisik Yoon University of Michigan–Ann Arbor
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Hoi-Jun Yoo
Hoi-Jun Yoo Korea Advanced Institute of Science and Technology

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