World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
6679
World Ranking
4497
National Ranking
153

Hyungcheol Shin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hyungcheol Shin sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 531 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hyungcheol Shin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hyungcheol Shin sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hyungcheol Shin is affiliated with Seoul National University in South Korea, specializing in research related to semiconductor devices and advanced memory technologies. Their scholarly output encompasses numerous publications primarily in engineering and computer science fields, with a focus on electrical and electronic engineering.

Their research covers several main topics including:

  • Advanced Data Storage Technologies
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Cellular Automata and Applications

Hyungcheol Shin's work has been published predominantly in the following venues:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • Japanese Journal of Applied Physics
  • IEICE Electronics Express
  • JSTS Journal of Semiconductor Technology and Science

Among their notable recent papers are:

  • "Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories" (2020, IEEE Transactions on Electron Devices)
  • "Variability-Aware Machine Learning Strategy for 3-D NAND Flash Memories" (2020, IEEE Transactions on Electron Devices)
  • "Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash Memories" (2022, IEEE Transactions on Electron Devices)
  • "Investigation and Compact Modeling of Hot-Carrier Injection for Read Disturbance in 3-D NAND Flash Memory" (2020, IEEE Transactions on Electron Devices)
  • "Prediction of Random Grain Boundary Variation Effect of 3-D NAND Flash Memory Using a Machine Learning Approach" (2021, IEEE Transactions on Electron Devices)

The scientist frequently collaborates with peers including Hyungjun Jo, Jang-Kyu Lee, Sangmin Ahn, Haechan Choi, and Jinil Yoo. These co-authors represent recurring partnerships in research publications, contributing to the body of work primarily focused on NAND flash memory technologies and semiconductor device innovations.

Hyungcheol Shin's research integrates advanced computational techniques such as machine learning within the semiconductor domain, particularly investigating variations and failure mechanisms in 3-D NAND flash memories. Their contributions span from applied device characterization to modeling physical effects impacting memory reliability and performance.

The breadth of their scholarly production includes 52 publications in engineering and 32 in computer science, underscoring interdisciplinary approaches bridging hardware architectures and computational theory. Their subfields extend to computer networks and communications, computational mathematics, and atomic and molecular physics related to semiconductor applications.

Best Publications

  • Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

    Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim

  • Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

    Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim

  • A simple and analytical parameter-extraction method of a microwave MOSFET

    Ickjin Kwon;Minkyu Je;Kwyro Lee;Hyungcheol Shin

  • A simple wide-band on-chip inductor model for silicon-based RF ICs

    J. Gil;Hyungcheol Shin

  • Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

    B. H. Choi;S. W. Hwang;I. G. Kim;H. C. Shin

  • Thin oxide charging current during plasma etching of aluminum

    H. Shin;C.-C. King;T. Horiuchi;T. Horiuchi;C. Hu

  • Flash memory element and manufacturing method

    Lee Jong Ho;Shin Hyeong Cheol

  • Thin gate oxide damage due to plasma processing

    H C Shin;H C Shin;Chenming Hu

  • Analytical drain thermal noise current model valid for deep submicron MOSFETs

    Kwangseok Han;Hyungcheol Shin;Kwyro Lee

  • A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

    Hoon Jeong;Ki-Whan Song;Il Han Park;Tae-Hun Kim

  • Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

    Tae Hun Kim;Il Han Park;Jong Duk Lee;Hyung Cheol Shin

  • Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

    Kwangseok Han;J. Gil;Seong-Sik Song;Jeonghu Han

  • Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

    In Man Kang;Hyungcheol Shin

  • Room temperature single electron effects in a Si nano-crystal memory

    Ilgweon Kim;Sangyeon Han;Kwangseok Han;Jongho Lee

  • Low noise capacitive sensor for multi-touch mobile handset's applications

    Seunghoon Ko;Hyungcheol Shin;Jaemin Lee;Hongjae Jang

  • Plasma etching charge-up damage to thin oxides

    Hyungcheol Shin;Neeta Jha;Qian Xue-Yu;Graham W. Hills

  • A simple parameter extraction method of spiral on-chip inductors

    M. Kang;J. Gil;Hyungcheol Shin

  • Modeling oxide thickness dependence of charging damage by plasma processing

    H. Shin;K. Noguchi;C. Hu

  • Characteristics of p-channel Si nano-crystal memory

    Kwangseok Han;Ilgweon Kim;Hyungcheol Shin

  • Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

    Sanghoon Lee;Heung-Jae Cho;Younghwan Son;Dong Seup Lee

  • A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique

    Hyungcheol Shin;Seunghoon Ko;Hongjae Jang;Ilhyun Yun

Frequent Co-Authors

Byung-Gook Park
Byung-Gook Park Seoul National University
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Minkyu Je
Minkyu Je Korea Advanced Institute of Science and Technology
Kwyro Lee
Kwyro Lee Korea Advanced Institute of Science and Technology
Chenming Hu
Chenming Hu University of California, Berkeley
Dong-Won Kim
Dong-Won Kim Hanyang University
Seungbum Hong
Seungbum Hong Korea Advanced Institute of Science and Technology
Sungjun Kim
Sungjun Kim Dongguk University
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Euisik Yoon
Euisik Yoon University of Michigan–Ann Arbor

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Related Online Degrees & Career Pathways

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