His primary scientific interests are in Optoelectronics, Electronic engineering, Electrical engineering, MOSFET and Silicon. His studies in Optoelectronics integrate themes in fields like Plasma, Plasma processing, Field-effect transistor, Plasma etching and Gate oxide. His research integrates issues of Capacitance, Communication channel, Flash memory and Equivalent circuit in his study of Electronic engineering.
His work on Capacitor, Noise and Capacitive sensing as part of his general Electrical engineering study is frequently connected to Potentiostat and Wireless sensor network, thereby bridging the divide between different branches of science. His MOSFET research includes elements of Dram and Computational physics. Hyungcheol Shin has researched Silicon in several fields, including Quantum dot, Quantum tunnelling, Nitride and Strained silicon.
His primary areas of investigation include Optoelectronics, Electrical engineering, Electronic engineering, MOSFET and CMOS. His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Transistor and Threshold voltage. Hyungcheol Shin regularly ties together related areas like Capacitance in his Electrical engineering studies.
His Electronic engineering research includes themes of Equivalent circuit, Noise temperature, Flash memory and Nand flash memory. His research in Flash memory intersects with topics in NAND gate, Charge trap flash, Non-volatile memory and Flash. Hyungcheol Shin focuses mostly in the field of MOSFET, narrowing it down to topics relating to Gate oxide and, in certain cases, Gate dielectric.
Optoelectronics, Logic gate, Nanowire, NAND gate and Field-effect transistor are his primary areas of study. His work carried out in the field of Optoelectronics brings together such families of science as Parasitic capacitance, Node, Self heating, Transistor and Electrical engineering. His Logic gate study combines topics from a wide range of disciplines, such as Metal gate, Electric potential, Gallium arsenide, Communication channel and Dielectric.
He combines subjects such as Capacitance and MOSFET with his study of Communication channel. His study on Field-effect transistor also encompasses disciplines like
Hyungcheol Shin mostly deals with Optoelectronics, NAND gate, Logic gate, Field-effect transistor and Condensed matter physics. Optoelectronics is closely attributed to Node in his work. His NAND gate study combines topics in areas such as Arrhenius equation, Activation energy, Charge, Flash and Electron.
His work deals with themes such as Thermal conductivity, Self heating and Cooling time, which intersect with Field-effect transistor. His Condensed matter physics research integrates issues from Transistor and Thermal resistance. His Permittivity research is multidisciplinary, incorporating perspectives in Parasitic element, Electronic engineering and Parasitic capacitance.
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Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray
Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim.
IEEE Transactions on Electron Devices (2012)
Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray
Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim.
IEEE Transactions on Electron Devices (2012)
Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim.
IEEE Transactions on Electron Devices (2011)
Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim.
IEEE Transactions on Electron Devices (2011)
A simple and analytical parameter-extraction method of a microwave MOSFET
Ickjin Kwon;Minkyu Je;Kwyro Lee;Hyungcheol Shin.
IEEE Transactions on Microwave Theory and Techniques (2002)
A simple and analytical parameter-extraction method of a microwave MOSFET
Ickjin Kwon;Minkyu Je;Kwyro Lee;Hyungcheol Shin.
IEEE Transactions on Microwave Theory and Techniques (2002)
A simple wide-band on-chip inductor model for silicon-based RF ICs
J. Gil;Hyungcheol Shin.
IEEE Transactions on Microwave Theory and Techniques (2003)
A simple wide-band on-chip inductor model for silicon-based RF ICs
J. Gil;Hyungcheol Shin.
IEEE Transactions on Microwave Theory and Techniques (2003)
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
B. H. Choi;S. W. Hwang;I. G. Kim;H. C. Shin.
Applied Physics Letters (1998)
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
B. H. Choi;S. W. Hwang;I. G. Kim;H. C. Shin.
Applied Physics Letters (1998)
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