World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
15043
World Ranking
2356
National Ranking
64

Byung-Gook Park publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Byung-Gook Park sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 951 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Byung-Gook Park D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Byung-Gook Park sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Byung-Gook Park is affiliated with Seoul National University in South Korea, conducting research primarily in the field of engineering with a focus on electrical and electronic engineering. Their work covers a broad range of subfields including cellular and molecular neuroscience, cognitive neuroscience, artificial intelligence, and biomedical engineering.

The scientist's research topics span several areas related to advanced memory technologies and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, as well as advancements in semiconductor devices and circuit design. Their work also includes studies in neuroscience and neural engineering, neural dynamics and brain function, and gas sensing nanomaterials and sensors.

Their frequent publication venues reflect a concentration in electronics and sensor technology, with multiple papers appearing in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Access
  • Sensors and Actuators B Chemical
  • Journal of Nanoscience and Nanotechnology

Notable recent papers authored or co-authored by Byung-Gook Park include:

  • "Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems," 2020, Journal of Alloys and Compounds
  • "Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same Si wafer with In2O3 sensing layer," 2020, Sensors and Actuators B Chemical
  • "Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering," 2020, IEEE Access
  • "4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array," 2022, Advanced Intelligent Systems
  • "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," 2021, Chaos Solitons & Fractals

Frequent collaborators of this researcher include:

  • Jong-Ho Lee
  • Sihyun Kim
  • Dongseok Kwon
  • Jong-Ho Bae
  • Kitae Lee

Best Publications

  • Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

    Woo Young Choi;Byung-Gook Park;Jong Duk Lee;Tsu-Jae King Liu

  • Demonstration of L-Shaped Tunnel Field-Effect Transistors

    Sang Wan Kim;Jang Hyun Kim;Tsu-Jae King Liu;Woo Young Choi

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    Sungjun Kim;Hyungjin Kim;Sungmin Hwang;Min-Hwi Kim

  • Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

    Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim

  • RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

    Seongjae Cho;Kyung Rok Kim;Byung-Gook Park;In Man Kang

  • Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

    Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim

  • Design optimization of gate-all-around (GAA) MOSFETs

    Jae Young Song;Woo Young Choi;Ju Hee Park;Jong Duk Lee

  • The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

    Hyuck In Kwon;In Man Kang;Byung-Gook Park;Jong Duk Lee

  • Multilevel vertical-channel SONOS nonvolatile memory on SOI

    Yong Kyu Lee;Jae Sung Sim;Suk Kang Sung;Chang Ju Lee

  • Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors

    Sang Wan Kim;Woo Young Choi;Min-Chul Sun;Min-Chul Sun;Hyun Woo Kim

  • Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory

    Sang-Ho Lee;Wandong Kim;Dae Woong Kwon;Joo Yun Seo

  • Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho

  • A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

    Hoon Jeong;Ki-Whan Song;Il Han Park;Tae-Hun Kim

  • Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    Sungjun Kim;Jia Chen;Ying-Chen Chen;Min-Hwi Kim

  • Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices

    Min-chul Sun;Byung-gook Park

  • Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator

    Cheon An Lee;Dong Wook Park;Sung Hun Jin;Il Han Park

  • Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

    Seongjae Cho;Jae Sung Lee;Kyung Rok Kim;Byung-Gook Park

  • Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si

    Jang Hyun Kim;Sangwan Kim;Byung-Gook Park

  • Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Ying-Chen Chen

  • Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

    Tae Hun Kim;Il Han Park;Jong Duk Lee;Hyung Cheol Shin

  • Dual-gate dynamic random access memory device and method of fabricating the same

    Ki-Whan Song;Jong-Duk Lee;Byung-Gook Park;Hoon Jeong

  • 100-nm n-/p-channel I-MOS using a novel self-aligned structure

    Woo Young Choi;Jae Young Song;Jong Duk Lee;Young June Park

Frequent Co-Authors

Jong-Ho Lee
Jong-Ho Lee Soongsil University
Hyungcheol Shin
Hyungcheol Shin Seoul National University
Sungjun Kim
Sungjun Kim Dongguk University
James S. Harris
James S. Harris Stanford University
Dong Myong Kim
Dong Myong Kim Kookmin University
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Doyeol Ahn
Doyeol Ahn Seoul National University
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Kevin L. Lear
Kevin L. Lear Colorado State University
Theodore I. Kamins
Theodore I. Kamins Stanford University

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