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Electronics and Electrical Engineering

D-Index
53
Citations
15043
World Ranking
2356
National Ranking
64

Overview

Byung-Gook Park is affiliated with Seoul National University in South Korea, conducting research primarily in the field of engineering with a focus on electrical and electronic engineering. Their work covers a broad range of subfields including cellular and molecular neuroscience, cognitive neuroscience, artificial intelligence, and biomedical engineering.

The scientist's research topics span several areas related to advanced memory technologies and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, as well as advancements in semiconductor devices and circuit design. Their work also includes studies in neuroscience and neural engineering, neural dynamics and brain function, and gas sensing nanomaterials and sensors.

Their frequent publication venues reflect a concentration in electronics and sensor technology, with multiple papers appearing in:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Access
  • Sensors and Actuators B Chemical
  • Journal of Nanoscience and Nanotechnology

Notable recent papers authored or co-authored by Byung-Gook Park include:

  • "Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems," 2020, Journal of Alloys and Compounds
  • "Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same Si wafer with In2O3 sensing layer," 2020, Sensors and Actuators B Chemical
  • "Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering," 2020, IEEE Access
  • "4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array," 2022, Advanced Intelligent Systems
  • "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," 2021, Chaos Solitons & Fractals

Frequent collaborators of this researcher include:

  • Jong-Ho Lee
  • Sihyun Kim
  • Dongseok Kwon
  • Jong-Ho Bae
  • Kitae Lee

Best Publications

  • Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

    Woo Young Choi;Byung-Gook Park;Jong Duk Lee;Tsu-Jae King Liu

  • Demonstration of L-Shaped Tunnel Field-Effect Transistors

    Sang Wan Kim;Jang Hyun Kim;Tsu-Jae King Liu;Woo Young Choi

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    Sungjun Kim;Hyungjin Kim;Sungmin Hwang;Min-Hwi Kim

  • Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

    Yoon Kim;Jang-Gn Yun;Se Hwan Park;Wandong Kim

  • RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

    Seongjae Cho;Kyung Rok Kim;Byung-Gook Park;In Man Kang

  • Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

    Jang-Gn Yun;Garam Kim;Joung-Eob Lee;Yoon Kim

  • Design optimization of gate-all-around (GAA) MOSFETs

    Jae Young Song;Woo Young Choi;Ju Hee Park;Jong Duk Lee

  • The analysis of dark signals in the CMOS APS imagers from the characterization of test structures

    Hyuck In Kwon;In Man Kang;Byung-Gook Park;Jong Duk Lee

  • Multilevel vertical-channel SONOS nonvolatile memory on SOI

    Yong Kyu Lee;Jae Sung Sim;Suk Kang Sung;Chang Ju Lee

  • Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors

    Sang Wan Kim;Woo Young Choi;Min-Chul Sun;Min-Chul Sun;Hyun Woo Kim

  • Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory

    Sang-Ho Lee;Wandong Kim;Dae Woong Kwon;Joo Yun Seo

  • Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Seongjae Cho

  • A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

    Hoon Jeong;Ki-Whan Song;Il Han Park;Tae-Hun Kim

  • Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    Sungjun Kim;Jia Chen;Ying-Chen Chen;Min-Hwi Kim

  • Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices

    Min-chul Sun;Byung-gook Park

  • Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator

    Cheon An Lee;Dong Wook Park;Sung Hun Jin;Il Han Park

  • Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

    Seongjae Cho;Jae Sung Lee;Kyung Rok Kim;Byung-Gook Park

  • Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si

    Jang Hyun Kim;Sangwan Kim;Byung-Gook Park

  • Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Ying-Chen Chen

  • Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures

    Tae Hun Kim;Il Han Park;Jong Duk Lee;Hyung Cheol Shin

  • Dual-gate dynamic random access memory device and method of fabricating the same

    Ki-Whan Song;Jong-Duk Lee;Byung-Gook Park;Hoon Jeong

  • 100-nm n-/p-channel I-MOS using a novel self-aligned structure

    Woo Young Choi;Jae Young Song;Jong Duk Lee;Young June Park

Frequent Co-Authors

Jong-Ho Lee
Jong-Ho Lee Soongsil University
Hyungcheol Shin
Hyungcheol Shin Seoul National University
Sungjun Kim
Sungjun Kim Dongguk University
James S. Harris
James S. Harris Stanford University
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Kevin L. Lear
Kevin L. Lear Colorado State University
Theodore I. Kamins
Theodore I. Kamins Stanford University
Sung-Jin Choi
Sung-Jin Choi Kookmin University
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University

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