Qing-Tai Zhao

Overview

Best Publications

• Efficient field emission from ZnO nanoneedle arrays

  Y. W. Zhu;H. Z. Zhang;X. C. Sun;S. Q. Feng

  666
  Citations

• Enhanced field emission from ZnO nanorods via thermal annealing in oxygen

  Q. Zhao;X. Y. Xu;X. F. Song;X. Z. Zhang

  240
  Citations

• Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

  L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  227
  Citations

• Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

  M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  215
  Citations

• Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

  Q. T. Zhao;U. Breuer;E. Rije;St. Lenk

  205
  Citations

• Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

  B. Xiang;H. Z. Zhang;G. H. Li;F. H. Yang

  174
  Citations

• Field-emission from long SnO2 nanobelt arrays

  Y. J. Chen;Q. H. Li;Y. X. Liang;T. H. Wang

  162
  Citations

• Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

  C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  157
  Citations

• Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

  J. Knoch;M. Zhang;Q. T. Zhao;St. Lenk

  129
  Citations

• Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

  Qing-Tai Zhao;Simon Richter;Christian Schulte-Braucks;Lars Knoll

  96
  Citations

• Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

  L. Knoll;Q.T. Zhao;S. Habicht;C. Urban

  95
  Citations

• An Improved Si Tunnel Field Effect Transistor With a Buried Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Source

  Q. T. Zhao;J. M. Hartmann;S. Mantl

  91
  Citations

• Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

  Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  90
  Citations

• Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

  L. Knoll;Q. T. Zhao;A. Nichau;S. Richter

  88
  Citations

• Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

  Matthias Schmidt;Anna Schäfer;Renato A. Minamisawa;Dan Buca

  87
  Citations

• Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

  Ali Saeidi;Farzan Jazaeri;Francesco Bellando;Igor Stolichnov

  81
  Citations

• Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

  Q. T. Zhao;F. Klinkhammer;M. Dolle;L. Kappius

  75
  Citations

• $\Omega$ -Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

  S. Richter;C. Sandow;A. Nichau;S. Trellenkamp

  67
  Citations

• Fabrication and Characterization of Enhancement-Mode High- $\kappa~{ m LaLuO}_{3}$ -AlGaN/GaN MIS-HEMTs

  Shu Yang;Sen Huang;Michael Schnee;Qing-Tai Zhao

  66
  Citations

• Catalyst-free growth of single-crystalline alumina nanowire arrays

  Q. Zhao;X. Xu;H. Zhang;Y. Chen

  65
  Citations

• Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.

  Fengben Xi;Yi Han;Yi Han;Mingshan Liu;Jin Hee Bae

  62
  Citations

• Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

  M. Zhang;J. Knoch;Q.T. Zhao;U. Breuer

  59
  Citations

• Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

  M. Zhang;J. Knoch;Q. T. Zhao;U. Breuer

  58
  Citations

• A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

  Wolfgang A. Vitale;Emanuele A. Casu;Arnab Biswas;Teodor Rosca

  55
  Citations

• Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

  M. Mueller;Q.T. Zhao;C. Urban;C. Sandow

  52
  Citations