World's Best Scientists 2026 revealed!
Qing-Tai Zhao

Qing-Tai Zhao

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
5251
World Ranking
5999
National Ranking
867

Qing-Tai Zhao publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Qing-Tai Zhao sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 313 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Qing-Tai Zhao D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Qing-Tai Zhao sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Qing-Tai Zhao is affiliated with Peking University in China and has contributed extensively to the field of engineering, with a focus on electrical and electronic engineering. Their research covers multiple subfields including biomedical engineering, atomic and molecular physics and optics, materials chemistry, and pulmonary and respiratory medicine.

Their work explores several main topics related to semiconductor technology and device applications. Key areas of research include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and interfaces

The scientist has published in various academic venues, with frequent publications appearing in:

  • Solid-State Electronics
  • ECS Meeting Abstracts
  • Advanced Electronic Materials
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces

Among their recent papers are:

  • "Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications" (2021, ACS Applied Materials & Interfaces)
  • "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" (2023, Communications Engineering)
  • "Si-Ge-Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics" (2023, Applied Physics A)
  • "Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance" (2020, ACS Applied Nano Materials)
  • "Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature" (2022, IEEE Electron Device Letters)

Qing-Tai Zhao frequently collaborates with several researchers in the field. Notable co-authors include:

  • Detlev Grützmacher
  • Jin Hee Bae
  • Yi Han
  • Dan Buca
  • Joachim Knoch

Best Publications

  • Efficient field emission from ZnO nanoneedle arrays

    Y. W. Zhu;H. Z. Zhang;X. C. Sun;S. Q. Feng

  • Enhanced field emission from ZnO nanorods via thermal annealing in oxygen

    Q. Zhao;X. Y. Xu;X. F. Song;X. Z. Zhang

  • Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

    L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  • Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

    M. Zhang;J. Knoch;Q.T. Zhao;St. Lenk

  • Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

    Q. T. Zhao;U. Breuer;E. Rije;St. Lenk

  • Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

    B. Xiang;H. Z. Zhang;G. H. Li;F. H. Yang

  • Field-emission from long SnO2 nanobelt arrays

    Y. J. Chen;Q. H. Li;Y. X. Liang;T. H. Wang

  • Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

    C. Sandow;J. Knoch;C. Urban;Q.-T. Zhao

  • Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

    J. Knoch;M. Zhang;Q. T. Zhao;St. Lenk

  • Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

    Qing-Tai Zhao;Simon Richter;Christian Schulte-Braucks;Lars Knoll

  • Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

    L. Knoll;Q.T. Zhao;S. Habicht;C. Urban

  • An Improved Si Tunnel Field Effect Transistor With a Buried Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Source

    Q. T. Zhao;J. M. Hartmann;S. Mantl

  • Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

    Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

    L. Knoll;Q. T. Zhao;A. Nichau;S. Richter

  • Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

    Matthias Schmidt;Anna Schäfer;Renato A. Minamisawa;Dan Buca

  • Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

    Ali Saeidi;Farzan Jazaeri;Francesco Bellando;Igor Stolichnov

  • Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

    Q. T. Zhao;F. Klinkhammer;M. Dolle;L. Kappius

  • $\Omega$ -Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

    S. Richter;C. Sandow;A. Nichau;S. Trellenkamp

  • Fabrication and Characterization of Enhancement-Mode High- $\kappa~{ m LaLuO}_{3}$ -AlGaN/GaN MIS-HEMTs

    Shu Yang;Sen Huang;Michael Schnee;Qing-Tai Zhao

  • Catalyst-free growth of single-crystalline alumina nanowire arrays

    Q. Zhao;X. Xu;H. Zhang;Y. Chen

  • Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.

    Fengben Xi;Yi Han;Yi Han;Mingshan Liu;Jin Hee Bae

  • Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

    M. Zhang;J. Knoch;Q.T. Zhao;U. Breuer

  • Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

    M. Zhang;J. Knoch;Q. T. Zhao;U. Breuer

  • A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

    Wolfgang A. Vitale;Emanuele A. Casu;Arnab Biswas;Teodor Rosca

  • Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

    M. Mueller;Q.T. Zhao;C. Urban;C. Sandow

Frequent Co-Authors

S. Mantl
S. Mantl Forschungszentrum Jülich
Joachim Knoch
Joachim Knoch RWTH Aachen University
Dapeng Yu
Dapeng Yu Peking University
Sen Huang
Sen Huang Chinese Academy of Sciences
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Jean-Pierre Raskin
Jean-Pierre Raskin Université Catholique de Louvain
Shu Yang
Shu Yang Zhejiang University
Jürgen Schubert
Jürgen Schubert Forschungszentrum Jülich

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those studying Electronics and Electrical Engineering, exploring related online degrees can open new career opportunities. Many professionals complement their technical skills with focused programs to boost their credentials quickly. For example, the 6-month certificate programs that pay well offer intensive training in specialized areas, enabling faster career transitions or advancement.

Engineering roles often require strong analytical skills and attention to detail—traits common among introverts. If you identify as one, consider looking into good paying jobs for introverts that align with your strengths alongside your engineering background.

Project management is an increasingly valuable skill set in engineering sectors. Online education facilitates this with options like the best accelerated project management degree programs online, which allow learners to gain leadership expertise swiftly.

Additionally, pursuing a project manager bachelor degree online can equip graduates with essential management capabilities, expanding their role potential within engineering projects and teams.

Best Scientists Citing Qing-Tai Zhao

Trending Scientists

Recently Published Articles