World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
13750
World Ranking
1742
National Ranking
39

Materials Science

D-Index
61
Citations
14603
World Ranking
6725
National Ranking
68

Research.com Recognitions

  • 2014 - IEEE Fellow For contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices

Overview

Jean-Pierre Raskin is affiliated with the Université Catholique de Louvain in Belgium. Their primary research focus lies within the field of engineering, with specific expertise in electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics, optics, and mechanical engineering.

Their extensive publication record spans several main topics including semiconductor materials and devices, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, integrated circuits and semiconductor failure analysis, semiconductor materials and interfaces, nanowire synthesis and applications, and graphene research and applications.

Frequently published in recognized academic venues, Jean-Pierre Raskin has contributed to Solid-State Electronics, SSRN Electronic Journal, IEEE Transactions on Electron Devices, IEEE Journal of the Electron Devices Society, and Acta Materialia.

Notable recent publications include:

  • "A Review on Functionalized Graphene Sensors for Detection of Ammonia," 2021, Sensors
  • "Porous silicon membranes and their applications: Recent advances," 2020, Sensors and Actuators A Physical
  • "Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology," 2020, Carbon
  • "Novel class of nanostructured metallic glass films with superior and tunable mechanical properties," 2021, Acta Materialia
  • "The Environmental Footprint of IC Production: Review, Analysis, and Lessons From Historical Trends," 2022, IEEE Transactions on Semiconductor Manufacturing

Jean-Pierre Raskin has collaborated frequently with several researchers, including Martin Rack, Denis Flandre, Thomas Pardoen, Valeriya Kilchytska, and Lucas Nyssens.

The scientist received the IEEE Fellow award in 2014 for contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices.

Best Publications

  • Substrate crosstalk reduction using SOI technology

    J.-P. Raskin;A. Viviani;D. Flandre;J.-P. Colinge

  • Raman and XPS characterization of vanadium oxide thin films with temperature

    Ferran Ureña-Begara;Aurelian Crunteanu;Jean-Pierre Raskin

  • Influence of device engineering on the analog and RF performances of SOI MOSFETs

    V. Kilchytska;A. Neve;L. Vancaillie;D. Levacq

  • New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity

    D. Lederer;J.-P. Raskin

  • Low Temperature Implementation of Dopant-Segregated Band-edge Metallic S/D junctions in Thin-Body SOI p-MOSFETs

    G. Larrieu;E. Dubois;R. Valentin;N. Breil

  • Fabrication method of so1 semiconductor devices

    Denis Fladre;Amaury De Mevergnies;Jean-Pierre Raskins

  • Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers

    Dimitri Lederer;Jean-Pierre Raskin

  • Identification of RF Harmonic Distortion on Si Substrates and its Reduction Using a Trap-Rich Layer

    Daniel C. Kerr;Joseph M. Gering;Thomas G. McKay;Michael S. Carroll

  • Low-temperature wafer bonding: a study of void formation and influence on bonding strength

    Xuan Xiong Zhang;J.-P. Raskin

  • A 94-GHz aperture-coupled micromachined microstrip antenna

    G.P. Gauthier;J.-P. Raskin;L.P.B. Katehi;G.M. Rebeiz

  • Inter- and intragranular plasticity mechanisms in ultrafine-grained Al thin films: An in situ TEM study

    F. Mompiou;M. Legros;A. Boé;Michaël Coulombier

  • Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

    J.-P. Raskin;R. Gillon;Jian Chen;D. Vanhoenacker-Janvier

  • Effective resistivity of fully-processed SOI substrates

    Dimitri Lederer;Jean-Pierre Raskin

  • Semiconductor-On-Insulator Materials for Nanoelectronics Applications

    Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin

  • Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

    J. Chen;J.‐P. Colinge;D. Flandre;R. Gillon

  • Micromachined thin-film sensors for SOI-CMOS co-integration

    Jean Laconte;Denis Flandre;Jean-Pierre Raskin

  • Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization

    J.-P. Raskin;Tsung Ming Chung;V. Kilchytska;D. Lederer

  • New On-Chip Nanomechanical Testing Laboratory - Applications to Aluminum and Polysilicon Thin Films

    S. Gravier;M. Coulombier;A. Safi;N. Andre

  • What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?

    G. Dambrine;C. Raynaud;D. Lederer;M. Dehan

  • Raman scattering study of the phonon dispersion in twisted bilayer graphene

    Jessica Campos-Delgado;Luiz G. Cançado;Carlos A. Achete;Ado Jorio

  • FinFET analogue characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert

Frequent Co-Authors

Denis Flandre
Denis Flandre Université Catholique de Louvain
Thomas Pardoen
Thomas Pardoen Université Catholique de Louvain
Isabelle Huynen
Isabelle Huynen Université Catholique de Louvain
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Dominique Schryvers
Dominique Schryvers University of Antwerp
Benjamin Iniguez
Benjamin Iniguez Rovira i Virgili University
Bernard Nysten
Bernard Nysten Université Catholique de Louvain

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