The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jean-Pierre Raskin sits on this spectrum.
This scientist: 1,013 publications — 98th percentile
98% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jean-Pierre Raskin sits on this spectrum.
This scientist: 59 D-Index — 75th percentile
75% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Jean-Pierre Raskin is affiliated with the Université Catholique de Louvain in Belgium. Their primary research focus lies within the field of engineering, with specific expertise in electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics, optics, and mechanical engineering.
Their extensive publication record spans several main topics including semiconductor materials and devices, advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, integrated circuits and semiconductor failure analysis, semiconductor materials and interfaces, nanowire synthesis and applications, and graphene research and applications.
Frequently published in recognized academic venues, Jean-Pierre Raskin has contributed to Solid-State Electronics, SSRN Electronic Journal, IEEE Transactions on Electron Devices, IEEE Journal of the Electron Devices Society, and Acta Materialia.
Notable recent publications include:
Jean-Pierre Raskin has collaborated frequently with several researchers, including Martin Rack, Denis Flandre, Thomas Pardoen, Valeriya Kilchytska, and Lucas Nyssens.
The scientist received the IEEE Fellow award in 2014 for contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices.
J.-P. Raskin;A. Viviani;D. Flandre;J.-P. Colinge
Ferran Ureña-Begara;Aurelian Crunteanu;Jean-Pierre Raskin
V. Kilchytska;A. Neve;L. Vancaillie;D. Levacq
D. Lederer;J.-P. Raskin
G. Larrieu;E. Dubois;R. Valentin;N. Breil
Denis Fladre;Amaury De Mevergnies;Jean-Pierre Raskins
Dimitri Lederer;Jean-Pierre Raskin
Daniel C. Kerr;Joseph M. Gering;Thomas G. McKay;Michael S. Carroll
Xuan Xiong Zhang;J.-P. Raskin
G.P. Gauthier;J.-P. Raskin;L.P.B. Katehi;G.M. Rebeiz
F. Mompiou;M. Legros;A. Boé;Michaël Coulombier
J.-P. Raskin;R. Gillon;Jian Chen;D. Vanhoenacker-Janvier
Dimitri Lederer;Jean-Pierre Raskin
Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin
J. Chen;J.‐P. Colinge;D. Flandre;R. Gillon
Jean Laconte;Denis Flandre;Jean-Pierre Raskin
J.-P. Raskin;Tsung Ming Chung;V. Kilchytska;D. Lederer
S. Gravier;M. Coulombier;A. Safi;N. Andre
G. Dambrine;C. Raynaud;D. Lederer;M. Dehan
Jessica Campos-Delgado;Luiz G. Cançado;Carlos A. Achete;Ado Jorio
Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert
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