World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
France
2026
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Materials Science
France
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
22495
World Ranking
997
National Ranking
6

Materials Science

D-Index
68
Citations
21897
World Ranking
4766
National Ranking
113

Gerard Ghibaudo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gerard Ghibaudo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,166 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gerard Ghibaudo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gerard Ghibaudo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 68 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Materials Science in France Leader Award

Overview

Gerard Ghibaudo is affiliated with Grenoble Alpes University in France and specializes in the field of Engineering, with a particular focus on Electrical and Electronic Engineering. Their research encompasses several subfields, including Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

The scientist's main topics of study include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Quantum and electron transport phenomena
  • GaN-based semiconductor devices and materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices

Ghibaudo has published extensively in several prominent scientific venues. Their frequent publication outlets are:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • IEEE Electron Device Letters
  • ECS Meeting Abstracts

The following are recent papers authored by or including Gerard Ghibaudo, listed with full titles, years of publication, and venues:

  • "Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications," 2020, IEEE Transactions on Electron Devices
  • "Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing," 2020, ACS Applied Materials & Interfaces
  • "Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature," 2021, Solid-State Electronics
  • "Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs," 2020, IEEE Electron Device Letters
  • "Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K," 2020, Applied Physics Letters

Ghibaudo has collaborated frequently with other researchers, with the most frequent co-authors being:

  • M. Cassé (16 collaborations)
  • Christoforos Theodorou (15 collaborations)
  • S. Cristoloveanu (11 collaborations)
  • M. Vinet (10 collaborations)
  • F. Gaillard (10 collaborations)

Best Publications

  • New method for the extraction of MOSFET parameters

    G. Ghibaudo

  • Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

    G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra

  • Review on high-k dielectrics reliability issues

    G. Ribes;J. Mitard;M. Denais;S. Bruyere

  • Electrical noise and RTS fluctuations in advanced CMOS devices

    Gérard Ghibaudo;T. Boutchacha

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

    Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

  • HfO 2 -Based OxRAM Devices as Synapses for Convolutional Neural Networks

    Daniele Garbin;Elisa Vianello;Olivier Bichler;Quentin Rafhay

  • Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

    K. Romanjek;F. Andrieu;T. Ernst;G. Ghibaudo

  • Ionizing radiation induced leakage current on ultra-thin gate oxides

    A. Scarpa;A. Paccagnella;F. Montera;G. Ghibaudo

  • 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

    C. Dupre;A. Hubert;S. Becu;M. Jublot

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Device and circuit cryogenic operation for low temperature electronics

    Francis Balestra;Gérard Ghibaudo

  • Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    S. Eminente;S. Cristoloveanu;R. Clerc;A. Ohata

  • Characterization and modeling of hysteresis phenomena in high K dielectrics

    C. Leroux;J. Mitard;G. Ghibaudo;X. Garros

  • A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

    F. Monsieur;E. Vincent;D. Roy;S. Bruyere

  • Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures

    G. Pananakakis;G. Ghibaudo;R. Kies;C. Papadas

  • On the theory of carrier number fluctuations in MOS devices

    Gerard Ghibaudo

  • Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow

    A. Fargeix;G. Ghibaudo

  • Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    Antoine Cros;Krunoslav Romanjek;Dominique Fleury;Samuel Harrison

  • Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

    F. Balestra;M. Benachir;J. Brini;G. Ghibaudo

Frequent Co-Authors

B. De Salvo
B. De Salvo Meta for Business
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
O. Faynot
O. Faynot CEA LETI
Yong Xu
Yong Xu Nanjing University of Posts and Telecommunications
Thierry Baron
Thierry Baron Grenoble Alpes University
Takeo Minari
Takeo Minari National Institute for Materials Science
Kazuhito Tsukagoshi
Kazuhito Tsukagoshi National Institute for Materials Science

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