2023 - Research.com Electronics and Electrical Engineering in France Leader Award
2022 - Research.com Electronics and Electrical Engineering in France Leader Award
Gerard Ghibaudo mainly focuses on Optoelectronics, Electronic engineering, MOSFET, Transistor and Threshold voltage. His Optoelectronics research includes elements of Field-effect transistor and Electrical engineering. His Electronic engineering study combines topics in areas such as Computational physics, Oxide, Characterization, Dielectric and Reliability.
His MOSFET research integrates issues from PMOS logic, Metal gate, Gate oxide and Scattering. His Transistor research incorporates themes from Noise, Flicker noise, Silicon and Infrasound. In his research, Electric potential is intimately related to Subthreshold conduction, which falls under the overarching field of Threshold voltage.
His primary scientific interests are in Optoelectronics, MOSFET, Electronic engineering, Transistor and Electrical engineering. His research in Optoelectronics intersects with topics in Threshold voltage and Infrasound. His research in Infrasound focuses on subjects like Noise, which are connected to Flicker noise.
His MOSFET research includes themes of Electron mobility, Condensed matter physics, Capacitance, Logic gate and Gate oxide. His study looks at the relationship between Electronic engineering and fields such as Oxide, as well as how they intersect with chemical problems. His Transistor research is multidisciplinary, incorporating perspectives in Nanowire and Equivalent series resistance.
Optoelectronics, Transistor, Electronic engineering, Silicon on insulator and MOSFET are his primary areas of study. His biological study spans a wide range of topics, including Threshold voltage and Logic gate. In his study, Analytical chemistry is strongly linked to Doping, which falls under the umbrella field of Transistor.
His study in Electronic engineering is interdisciplinary in nature, drawing from both Work, Resistive random-access memory, Characterization, Stress and Communication channel. His Silicon on insulator research also works with subjects such as
Gerard Ghibaudo mainly investigates Optoelectronics, Electronic engineering, Transistor, MOSFET and Silicon on insulator. His Optoelectronics study incorporates themes from Threshold voltage, Scattering and Nanotechnology. His Electronic engineering study integrates concerns from other disciplines, such as Characterization and Programmable metallization cell, Resistive random-access memory, Voltage.
His study looks at the relationship between Transistor and topics such as Silicon, which overlap with Analytical chemistry. As a part of the same scientific study, he usually deals with the MOSFET, concentrating on Semiconductor device modeling and frequently concerns with Capacitance. His Silicon on insulator study also includes
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
New method for the extraction of MOSFET parameters
G. Ghibaudo.
Electronics Letters (1988)
New method for the extraction of MOSFET parameters
G. Ghibaudo.
Electronics Letters (1988)
Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors
G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra.
Physica Status Solidi (a) (1991)
Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors
G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra.
Physica Status Solidi (a) (1991)
Review on high-k dielectrics reliability issues
G. Ribes;J. Mitard;M. Denais;S. Bruyere.
IEEE Transactions on Device and Materials Reliability (2005)
Review on high-k dielectrics reliability issues
G. Ribes;J. Mitard;M. Denais;S. Bruyere.
IEEE Transactions on Device and Materials Reliability (2005)
Electrical noise and RTS fluctuations in advanced CMOS devices
Gérard Ghibaudo;T. Boutchacha.
Microelectronics Reliability (2002)
Electrical noise and RTS fluctuations in advanced CMOS devices
Gérard Ghibaudo;T. Boutchacha.
Microelectronics Reliability (2002)
Ultimately thin double-gate SOI MOSFETs
T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)
Ultimately thin double-gate SOI MOSFETs
T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)
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