World's Best Scientists 2026 revealed!
Award Badge
Electronics and Electrical Engineering
France
2026
Award Badge
Materials Science
France
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
22495
World Ranking
997
National Ranking
6

Materials Science

D-Index
68
Citations
21897
World Ranking
4768
National Ranking
113

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Materials Science in France Leader Award

Overview

Gerard Ghibaudo is affiliated with Grenoble Alpes University in France and specializes in the field of Engineering, with a particular focus on Electrical and Electronic Engineering. Their research encompasses several subfields, including Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

The scientist's main topics of study include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Quantum and electron transport phenomena
  • GaN-based semiconductor devices and materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices

Ghibaudo has published extensively in several prominent scientific venues. Their frequent publication outlets are:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • IEEE Electron Device Letters
  • ECS Meeting Abstracts

The following are recent papers authored by or including Gerard Ghibaudo, listed with full titles, years of publication, and venues:

  • "Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications," 2020, IEEE Transactions on Electron Devices
  • "Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing," 2020, ACS Applied Materials & Interfaces
  • "Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature," 2021, Solid-State Electronics
  • "Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs," 2020, IEEE Electron Device Letters
  • "Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K," 2020, Applied Physics Letters

Ghibaudo has collaborated frequently with other researchers, with the most frequent co-authors being:

  • M. Cassé (16 collaborations)
  • Christoforos Theodorou (15 collaborations)
  • S. Cristoloveanu (11 collaborations)
  • M. Vinet (10 collaborations)
  • F. Gaillard (10 collaborations)

Best Publications

  • New method for the extraction of MOSFET parameters

    G. Ghibaudo

  • Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

    G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra

  • Review on high-k dielectrics reliability issues

    G. Ribes;J. Mitard;M. Denais;S. Bruyere

  • Electrical noise and RTS fluctuations in advanced CMOS devices

    Gérard Ghibaudo;T. Boutchacha

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

    Yong Xu;Takeo Minari;Kazuhito Tsukagoshi;J. A. Chroboczek

  • HfO 2 -Based OxRAM Devices as Synapses for Convolutional Neural Networks

    Daniele Garbin;Elisa Vianello;Olivier Bichler;Quentin Rafhay

  • Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

    K. Romanjek;F. Andrieu;T. Ernst;G. Ghibaudo

  • Ionizing radiation induced leakage current on ultra-thin gate oxides

    A. Scarpa;A. Paccagnella;F. Montera;G. Ghibaudo

  • 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

    C. Dupre;A. Hubert;S. Becu;M. Jublot

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Device and circuit cryogenic operation for low temperature electronics

    Francis Balestra;Gérard Ghibaudo

  • Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    S. Eminente;S. Cristoloveanu;R. Clerc;A. Ohata

  • Characterization and modeling of hysteresis phenomena in high K dielectrics

    C. Leroux;J. Mitard;G. Ghibaudo;X. Garros

  • A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

    F. Monsieur;E. Vincent;D. Roy;S. Bruyere

  • Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures

    G. Pananakakis;G. Ghibaudo;R. Kies;C. Papadas

  • On the theory of carrier number fluctuations in MOS devices

    Gerard Ghibaudo

  • Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow

    A. Fargeix;G. Ghibaudo

  • Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    Antoine Cros;Krunoslav Romanjek;Dominique Fleury;Samuel Harrison

  • Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

    F. Balestra;M. Benachir;J. Brini;G. Ghibaudo

Frequent Co-Authors

B. De Salvo
B. De Salvo Meta for Business
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
O. Faynot
O. Faynot CEA LETI
Yong Xu
Yong Xu Nanjing University of Posts and Telecommunications
Thierry Baron
Thierry Baron Grenoble Alpes University
Takeo Minari
Takeo Minari National Institute for Materials Science
Kazuhito Tsukagoshi
Kazuhito Tsukagoshi National Institute for Materials Science

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, diversifying skills through complementary online degrees can open new career possibilities. For instance, a bachelor of project management can equip engineers with leadership and organizational skills essential for overseeing complex engineering projects.

Many working adults benefit from accelerated bachelors degree programs for adults, which offer flexibility and faster completion, enabling professionals in technical fields to advance without pausing their careers.

Emerging interdisciplinary roles often require expertise in both technology and education, making degrees like the instructional design increasingly valuable for engineers interested in training, curriculum development, or technical communication.

Additionally, competency based masters degrees offer personalized learning paths, focusing on skill mastery rather than credit hours, which can be especially beneficial for engineers seeking to deepen expertise efficiently.

Best Scientists Citing Gerard Ghibaudo

Trending Scientists