D-Index & Metrics Best Publications
Electronics and Electrical Engineering
France
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 57 Citations 14,447 737 World Ranking 3842 National Ranking 93
Electronics and Electrical Engineering D-index 62 Citations 17,737 1,040 World Ranking 832 National Ranking 9

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in France Leader Award

2022 - Research.com Electronics and Electrical Engineering in France Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Transistor
  • Semiconductor

Gerard Ghibaudo mainly focuses on Optoelectronics, Electronic engineering, MOSFET, Transistor and Threshold voltage. His Optoelectronics research includes elements of Field-effect transistor and Electrical engineering. His Electronic engineering study combines topics in areas such as Computational physics, Oxide, Characterization, Dielectric and Reliability.

His MOSFET research integrates issues from PMOS logic, Metal gate, Gate oxide and Scattering. His Transistor research incorporates themes from Noise, Flicker noise, Silicon and Infrasound. In his research, Electric potential is intimately related to Subthreshold conduction, which falls under the overarching field of Threshold voltage.

His most cited work include:

  • New method for the extraction of MOSFET parameters (644 citations)
  • Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors (524 citations)
  • Review on high-k dielectrics reliability issues (423 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, MOSFET, Electronic engineering, Transistor and Electrical engineering. His research in Optoelectronics intersects with topics in Threshold voltage and Infrasound. His research in Infrasound focuses on subjects like Noise, which are connected to Flicker noise.

His MOSFET research includes themes of Electron mobility, Condensed matter physics, Capacitance, Logic gate and Gate oxide. His study looks at the relationship between Electronic engineering and fields such as Oxide, as well as how they intersect with chemical problems. His Transistor research is multidisciplinary, incorporating perspectives in Nanowire and Equivalent series resistance.

He most often published in these fields:

  • Optoelectronics (56.91%)
  • MOSFET (30.91%)
  • Electronic engineering (28.91%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (56.91%)
  • Transistor (24.55%)
  • Electronic engineering (28.91%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Transistor, Electronic engineering, Silicon on insulator and MOSFET are his primary areas of study. His biological study spans a wide range of topics, including Threshold voltage and Logic gate. In his study, Analytical chemistry is strongly linked to Doping, which falls under the umbrella field of Transistor.

His study in Electronic engineering is interdisciplinary in nature, drawing from both Work, Resistive random-access memory, Characterization, Stress and Communication channel. His Silicon on insulator research also works with subjects such as

  • Wafer together with Gallium nitride,
  • Noise and Noise most often made with reference to Infrasound. His studies in MOSFET integrate themes in fields like Computational physics, Capacitance, Drain current, Condensed matter physics and Semiconductor device modeling.

Between 2013 and 2021, his most popular works were:

  • HfO 2 -Based OxRAM Devices as Synapses for Convolutional Neural Networks (127 citations)
  • 3DVLSI with CoolCube process: An alternative path to scaling (83 citations)
  • Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses (55 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Transistor
  • Semiconductor

Gerard Ghibaudo mainly investigates Optoelectronics, Electronic engineering, Transistor, MOSFET and Silicon on insulator. His Optoelectronics study incorporates themes from Threshold voltage, Scattering and Nanotechnology. His Electronic engineering study integrates concerns from other disciplines, such as Characterization and Programmable metallization cell, Resistive random-access memory, Voltage.

His study looks at the relationship between Transistor and topics such as Silicon, which overlap with Analytical chemistry. As a part of the same scientific study, he usually deals with the MOSFET, concentrating on Semiconductor device modeling and frequently concerns with Capacitance. His Silicon on insulator study also includes

  • Logic gate which connect with Equivalent series resistance,
  • Infrasound that intertwine with fields like Noise.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

New method for the extraction of MOSFET parameters

G. Ghibaudo.
Electronics Letters (1988)

1085 Citations

New method for the extraction of MOSFET parameters

G. Ghibaudo.
Electronics Letters (1988)

1085 Citations

Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra.
Physica Status Solidi (a) (1991)

754 Citations

Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

G. Ghibaudo;O. Roux;Ch. Nguyen-Duc;F. Balestra.
Physica Status Solidi (a) (1991)

754 Citations

Review on high-k dielectrics reliability issues

G. Ribes;J. Mitard;M. Denais;S. Bruyere.
IEEE Transactions on Device and Materials Reliability (2005)

620 Citations

Review on high-k dielectrics reliability issues

G. Ribes;J. Mitard;M. Denais;S. Bruyere.
IEEE Transactions on Device and Materials Reliability (2005)

620 Citations

Electrical noise and RTS fluctuations in advanced CMOS devices

Gérard Ghibaudo;T. Boutchacha.
Microelectronics Reliability (2002)

380 Citations

Electrical noise and RTS fluctuations in advanced CMOS devices

Gérard Ghibaudo;T. Boutchacha.
Microelectronics Reliability (2002)

380 Citations

Ultimately thin double-gate SOI MOSFETs

T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)

292 Citations

Ultimately thin double-gate SOI MOSFETs

T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)

292 Citations

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