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B. De Salvo

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 34 5843 5610 1975 1842 257 4513

B. De Salvo publications per year

The chart shows the history of publications by B. De Salvo between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. B. De Salvo published across 29 years, from 1997 to 2025, averaging 10.7 papers a year. Output peaked at 31 publications in 2013. 13 of the 309 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 31. Peak 31 publications in 2013. 1997: 1 publication 1998: 3 publications 1999: 10 publications 2000: 4 publications 2001: 4 publications 2002: 7 publications 2003: 9 publications 2004: 9 publications 2005: 7 publications 2006: 13 publications 2007: 12 publications 2008: 15 publications 2009: 18 publications 2010: 23 publications 2011: 22 publications 2012: 22 publications 2013: 31 publications 2014: 20 publications 2015: 15 publications 2016: 16 publications 2017: 12 publications 2018: 6 publications 2019: 4 publications 2020: 0 publications 2021: 1 publication 2022: 8 publications 2023: 4 publications 2024: 9 publications 2025: 4 publications
1997 2025

309 publications in total across all disciplines

View publications per year as a table
B. De Salvo: publications per year, 1997 to 2025
Year Publications
1997 1
1998 3
1999 10
2000 4
2001 4
2002 7
2003 9
2004 9
2005 7
2006 13
2007 12
2008 15
2009 18
2010 23
2011 22
2012 22
2013 31
2014 20
2015 15
2016 16
2017 12
2018 6
2019 4
2020 0
2021 1
2022 8
2023 4
2024 9
2025 4
Total 309
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B. De Salvo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where B. De Salvo sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 257 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 257
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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B. De Salvo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where B. De Salvo sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 34 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244 34
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

B. De Salvo is affiliated with Meta for Business in the United States and has a research focus spanning engineering and computer science. Their work covers multiple specialized subfields, notably Electrical and Electronic Engineering, Computer Vision and Pattern Recognition, Artificial Intelligence, Aerospace Engineering, and Radiology, Nuclear Medicine and Imaging.

The scientist's primary topics of research include Advanced Memory and Neural Computing, CCD and CMOS Imaging Sensors, Advanced Neural Network Applications, Robotics and Sensor-Based Localization, Infrared Target Detection Methodologies, Optical Imaging and Spectroscopy Techniques, and 3D IC and TSV technologies.

Recent publications by B. De Salvo provide insight into their research trajectory. These include:

  • "Augmented Reality - The Next Frontier of Image Sensors and Compute Systems," 2022, presented at the 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • "SplitNets: Designing Neural Architectures for Efficient Distributed Computing on Head-Mounted Systems," 2022, published in the 2022 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR)
  • "Power-of-Two Quantization for Low Bitwidth and Hardware Compliant Neural Networks," 2022, available on arXiv (Cornell University)
  • "Distributed On-Sensor Compute System for AR/VR Devices: A Semi-Analytical Simulation Framework for Power Estimation," 2022, also on arXiv (Cornell University)
  • "Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine," 2024, published in the IEEE Journal of Solid-State Circuits

B. De Salvo often collaborates with several researchers who appear frequently among co-authors. These include Syed Shakib Sarwar, Ziyun Li, Jorge Marx Gómez, Reid Pinkham, and Sai Qian Zhang.

The majority of B. De Salvo's works are published in venues such as arXiv (Cornell University), which accounts for twelve publications, the 2022 IEEE International Solid-State Circuits Conference (ISSCC), the 2022 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR), the IEEE Journal of Solid-State Circuits, and ACM Transactions on Design Automation of Electronic Systems.

Best Publications

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

    C. Nail;G. Molas;P. Blaise;G. Piccolboni

  • How far will silicon nanocrystals push the scaling limits of NVMs technologies

    B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  • HfO 2 -Based RRAM: Electrode Effects, Ti/HfO 2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

    Boubacar Traore;Philippe Blaise;Elisa Vianello;Luca Perniola

  • Silicon nanocrystal memories

    S. Lombardo;B. De Salvo;C. Gerardi;T. Baron

  • Carbon-doped GeTe: A promising material for Phase-Change Memories

    G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  • Experimental and theoretical study of electrode effects in HfO 2 based RRAM

    C. Cagli;J. Buckley;V. Jousseaume;T. Cabout

  • On the Origin of Low-Resistance State Retention Failure in HfO 2 -Based RRAM and Impact of Doping/Alloying

    Boubacar Traore;Philippe Blaise;Elisa Vianello;Helen Grampeix

  • Experimental and theoretical investigation of nonvolatile memory data-retention

    B. De Salvo;G. Ghibaudo;G. Pananakakis;G. Reimbold

  • Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

    T. Ernst;L. Duraffourg;C. Dupre;E. Bernard

  • Growth of Si nanocrystals on alumina and integration in memory devices

    T. Baron;A. Fernandes;J. F. Damlencourt;B. De Salvo

  • A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${ m Pt}/{ m Hf}{ m O}_{2}/{ m Pt}$ Resistive Random Access Memory

    Kan-Hao Xue;Boubacar Traore;Philippe Blaise;Leonardo R. C. Fonseca

  • Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

    J. Buckley;B. De Salvo;D. Deleruyelle;M. Gely

  • N-doped GeTe as performance booster for embedded Phase-Change Memories

    A. Fantini;V. Sousa;L. Perniola;E. Gourvest

  • Degradation of floating-gate memory reliability by few electron phenomena

    G. Molas;D. Deleruyelle;B. De Salvo;G. Ghibaudo

  • Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

    E. Vianello;F. Driussi;P. Blaise;P. Palestri

  • Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

    G. Molas;B. De Salvo;G. Ghibaudo;D. Mariolle

  • Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

    G. Navarro;M. Coue;A. Kiouseloglou;P. Noe

  • Accurate analysis of parasitic current overshoot during forming operation in RRAMs

    S. Tirano;L. Perniola;J. Buckley;J. Cluzel

  • Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

    Jeremy Guy;Gabriel Molas;Philippe Blaise;Mathieu Bernard

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
E. Vianello
E. Vianello French Alternative Energies and Atomic Energy Commission (CEA)
Thierry Baron
Thierry Baron Grenoble Alpes University
O. Faynot
O. Faynot CEA LETI
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
J. M. Hartmann
J. M. Hartmann CEA LETI
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

External Links

Personal website of B. De Salvo

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Publications: 27

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Maud Vinet

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Publications: 22

Zhitang Song

Zhitang Song

Chinese Academy of Sciences

Publications: 22

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Publications: 20

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Publications: 19

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