B. De Salvo

Overview

Best Publications

• A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

  A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  247
  Citations

• Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

  B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  180
  Citations

• Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

  C. Nail;G. Molas;P. Blaise;G. Piccolboni

  125
  Citations

• How far will silicon nanocrystals push the scaling limits of NVMs technologies

  B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  120
  Citations

• HfO 2 -Based RRAM: Electrode Effects, Ti/HfO 2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

  Boubacar Traore;Philippe Blaise;Elisa Vianello;Luca Perniola

  117
  Citations

• Silicon nanocrystal memories

  S. Lombardo;B. De Salvo;C. Gerardi;T. Baron

  112
  Citations

• Carbon-doped GeTe: A promising material for Phase-Change Memories

  G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  110
  Citations

• Experimental and theoretical study of electrode effects in HfO 2 based RRAM

  C. Cagli;J. Buckley;V. Jousseaume;T. Cabout

  106
  Citations

• On the Origin of Low-Resistance State Retention Failure in HfO 2 -Based RRAM and Impact of Doping/Alloying

  Boubacar Traore;Philippe Blaise;Elisa Vianello;Helen Grampeix

  96
  Citations

• Experimental and theoretical investigation of nonvolatile memory data-retention

  B. De Salvo;G. Ghibaudo;G. Pananakakis;G. Reimbold

  91
  Citations

• Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

  T. Ernst;L. Duraffourg;C. Dupre;E. Bernard

  83
  Citations

• Growth of Si nanocrystals on alumina and integration in memory devices

  T. Baron;A. Fernandes;J. F. Damlencourt;B. De Salvo

  79
  Citations

• A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${ m Pt}/{ m Hf}{ m O}_{2}/{ m Pt}$ Resistive Random Access Memory

  Kan-Hao Xue;Boubacar Traore;Philippe Blaise;Leonardo R. C. Fonseca

  78
  Citations

• Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

  J. Buckley;B. De Salvo;D. Deleruyelle;M. Gely

  77
  Citations

• N-doped GeTe as performance booster for embedded Phase-Change Memories

  A. Fantini;V. Sousa;L. Perniola;E. Gourvest

  67
  Citations

• Degradation of floating-gate memory reliability by few electron phenomena

  G. Molas;D. Deleruyelle;B. De Salvo;G. Ghibaudo

  67
  Citations

• Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

  E. Vianello;F. Driussi;P. Blaise;P. Palestri

  66
  Citations

• Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

  G. Molas;B. De Salvo;G. Ghibaudo;D. Mariolle

  62
  Citations

• Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

  G. Navarro;M. Coue;A. Kiouseloglou;P. Noe

  59
  Citations

• Accurate analysis of parasitic current overshoot during forming operation in RRAMs

  S. Tirano;L. Perniola;J. Buckley;J. Cluzel

  48
  Citations

• Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

  Jeremy Guy;Gabriel Molas;Philippe Blaise;Mathieu Bernard

  44
  Citations