World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4513
World Ranking
5843
National Ranking
1975

B. De Salvo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where B. De Salvo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 257 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

B. De Salvo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where B. De Salvo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

B. De Salvo is affiliated with Meta for Business in the United States and has a research focus spanning engineering and computer science. Their work covers multiple specialized subfields, notably Electrical and Electronic Engineering, Computer Vision and Pattern Recognition, Artificial Intelligence, Aerospace Engineering, and Radiology, Nuclear Medicine and Imaging.

The scientist's primary topics of research include Advanced Memory and Neural Computing, CCD and CMOS Imaging Sensors, Advanced Neural Network Applications, Robotics and Sensor-Based Localization, Infrared Target Detection Methodologies, Optical Imaging and Spectroscopy Techniques, and 3D IC and TSV technologies.

Recent publications by B. De Salvo provide insight into their research trajectory. These include:

  • "Augmented Reality - The Next Frontier of Image Sensors and Compute Systems," 2022, presented at the 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • "SplitNets: Designing Neural Architectures for Efficient Distributed Computing on Head-Mounted Systems," 2022, published in the 2022 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR)
  • "Power-of-Two Quantization for Low Bitwidth and Hardware Compliant Neural Networks," 2022, available on arXiv (Cornell University)
  • "Distributed On-Sensor Compute System for AR/VR Devices: A Semi-Analytical Simulation Framework for Power Estimation," 2022, also on arXiv (Cornell University)
  • "Siracusa: A 16 nm Heterogenous RISC-V SoC for Extended Reality With At-MRAM Neural Engine," 2024, published in the IEEE Journal of Solid-State Circuits

B. De Salvo often collaborates with several researchers who appear frequently among co-authors. These include Syed Shakib Sarwar, Ziyun Li, Jorge Marx Gómez, Reid Pinkham, and Sai Qian Zhang.

The majority of B. De Salvo's works are published in venues such as arXiv (Cornell University), which accounts for twelve publications, the 2022 IEEE International Solid-State Circuits Conference (ISSCC), the 2022 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR), the IEEE Journal of Solid-State Circuits, and ACM Transactions on Design Automation of Electronic Systems.

Best Publications

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

    B. De Salvo;G. Ghibaudo;G. Pananakakis;P. Masson

  • Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

    C. Nail;G. Molas;P. Blaise;G. Piccolboni

  • How far will silicon nanocrystals push the scaling limits of NVMs technologies

    B. De Salvo;C. Gerardi;S. Lombardo;T. Baron

  • HfO 2 -Based RRAM: Electrode Effects, Ti/HfO 2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

    Boubacar Traore;Philippe Blaise;Elisa Vianello;Luca Perniola

  • Silicon nanocrystal memories

    S. Lombardo;B. De Salvo;C. Gerardi;T. Baron

  • Carbon-doped GeTe: A promising material for Phase-Change Memories

    G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  • Experimental and theoretical study of electrode effects in HfO 2 based RRAM

    C. Cagli;J. Buckley;V. Jousseaume;T. Cabout

  • On the Origin of Low-Resistance State Retention Failure in HfO 2 -Based RRAM and Impact of Doping/Alloying

    Boubacar Traore;Philippe Blaise;Elisa Vianello;Helen Grampeix

  • Experimental and theoretical investigation of nonvolatile memory data-retention

    B. De Salvo;G. Ghibaudo;G. Pananakakis;G. Reimbold

  • Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?

    T. Ernst;L. Duraffourg;C. Dupre;E. Bernard

  • Growth of Si nanocrystals on alumina and integration in memory devices

    T. Baron;A. Fernandes;J. F. Damlencourt;B. De Salvo

  • A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${ m Pt}/{ m Hf}{ m O}_{2}/{ m Pt}$ Resistive Random Access Memory

    Kan-Hao Xue;Boubacar Traore;Philippe Blaise;Leonardo R. C. Fonseca

  • Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

    J. Buckley;B. De Salvo;D. Deleruyelle;M. Gely

  • N-doped GeTe as performance booster for embedded Phase-Change Memories

    A. Fantini;V. Sousa;L. Perniola;E. Gourvest

  • Degradation of floating-gate memory reliability by few electron phenomena

    G. Molas;D. Deleruyelle;B. De Salvo;G. Ghibaudo

  • Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

    E. Vianello;F. Driussi;P. Blaise;P. Palestri

  • Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories

    G. Molas;B. De Salvo;G. Ghibaudo;D. Mariolle

  • Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

    G. Navarro;M. Coue;A. Kiouseloglou;P. Noe

  • Accurate analysis of parasitic current overshoot during forming operation in RRAMs

    S. Tirano;L. Perniola;J. Buckley;J. Cluzel

  • Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

    Jeremy Guy;Gabriel Molas;Philippe Blaise;Mathieu Bernard

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
E. Vianello
E. Vianello French Alternative Energies and Atomic Energy Commission (CEA)
Thierry Baron
Thierry Baron Grenoble Alpes University
O. Faynot
O. Faynot CEA LETI
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

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