World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
9152
World Ranking
2952
National Ranking
52

Materials Science

D-Index
51
Citations
9434
World Ranking
9899
National Ranking
157

Tupei Chen publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tupei Chen sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 357 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tupei Chen D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tupei Chen sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tupei Chen is affiliated with Nanyang Technological University in Singapore and has an extensive publication record primarily in the field of Engineering, with a focus on Electrical and Electronic Engineering. Their research spans a number of specialized subfields including Artificial Intelligence, Biomedical Engineering, Computer Vision and Pattern Recognition, and Cognitive Neuroscience.

The scientist has contributed to various topics within these domains. Key research themes include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neural dynamics and brain function
  • CCD and CMOS Imaging Sensors
  • Advanced Sensor and Energy Harvesting Materials
  • Neuroscience and Neural Engineering
  • Thin-Film Transistor Technologies

Chen's recent published works cover a range of neural network and sensor technologies. Selected recent papers include:

  • Quantized STDP-based online-learning spiking neural network, 2021, Neural Computing and Applications
  • STBNN: Hardware-friendly spatio-temporal binary neural network with high pattern recognition accuracy, 2020, Neurocomputing
  • An Area- and Energy-Efficient Spiking Neural Network With Spike-Time-Dependent Plasticity Realized With SRAM Processing-in-Memory Macro and On-Chip Unsupervised Learning, 2023, IEEE Transactions on Biomedical Circuits and Systems
  • Wearable Sensors, Data Processing, and Artificial Intelligence in Pregnancy Monitoring: A Review, 2024, Sensors
  • HfOx-Based RRAM Device With Sandwich-Like Electrode for Thermal Budget Requirement, 2020, IEEE Transactions on Electron Devices

Frequent coauthors who have collaborated with Chen include Qi Yu, Yang Liu, Junjie Wang, S. G. Hu, and Yuancong Wu. Publication venues where Chen's research regularly appears include:

  • Scientific Reports
  • IEEE Transactions on Electron Devices
  • ECS Journal of Solid State Science and Technology
  • Sensors
  • Electronics Letters

Chen's scholarly work often intersects with the development of novel neural computing methods and hardware implementations aimed at improving efficiency and recognition accuracy. Their research also explores sensor technologies with applications in health monitoring and memory devices relevant to electronic circuits and systems.

Best Publications

  • Nanofabrication by scanning probe microscope lithography: A review

    Ampere A. Tseng;Andrea Notargiacomo;T. P. Chen

  • Associative memory realized by a reconfigurable memristive Hopfield neural network

    S.G. Hu;Y. Liu;Z Liu;T.P. Chen

  • Bond-order?bond-length?bond-strength (bond-OLS) correlation mechanism for the shape-and-size dependence of a nanosolid

    Chang Q Sun;Chang Q Sun;B K Tay;X T Zeng;S Li

  • Non-Volatile Organic Memory Applications Enabled by In Situ Synthesis of Gold Nanoparticles in a Self-Assembled Block Copolymer**

    Wei Lin Leong;Pooi See Lee;Anup Lohani;Yeng Ming Lam

  • Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications

    Kai Qian;Roland Yingjie Tay;Viet Cuong Nguyen;Jiangxin Wang

  • A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

    Hua Kai Li;Tupei Chen;P. Liu;S. G. Hu;S. G. Hu

  • 3D hierarchical Co3O4@Co3S4 nanoarrays as cathode materials for asymmetric pseudocapacitors

    Bo Liu;Dezhi Kong;Dezhi Kong;Jun Zhang;Ye Wang

  • Charging phenomena in pentacene-gold nanoparticle memory device

    W. L. Leong;Pooi See Lee;Subodh Gautam Mhaisalkar;Tupei Chen

  • Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor

    S. G. Hu;Y. Liu;Tupei Chen;Z. Liu

  • Thickness effect on the band gap and optical properties of germanium thin films

    Eunice S. M. Goh;T. P. Chen;C. Q. Sun;Y. C. Liu

  • Ultrahigh Performance of Novel Capacitive Deionization Electrodes based on A Three-Dimensional Graphene Architecture with Nanopores.

    Wenhui Shi;Haibo Li;Xiehong Cao;Zhi Yi Leong

  • Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor

    S. G. Hu;Y. Liu;Tupei Chen;Z. Liu

  • Optical properties of silicon nanocrystals embedded in a SiO2 matrix

    Liang Ding;Tupei Chen;Yang Liu;Chi Yung Ng

  • Fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

    Clement Yuen;S. F. Yu;S. P. Lau;Rusli

  • Ultraviolet and visible electroluminescence from n-ZnO∕SiOx∕(n,p)-Si heterostructured light-emitting diodes

    S. T. Tan;X. W. Sun;J. L. Zhao;S. Iwan

  • A Deformable and Highly Robust Ethyl Cellulose Transparent Conductor with a Scalable Silver Nanowires Bundle Micromesh

    Jiaqing Xiong;Shaohui Li;Yiyang Ye;Jiangxin Wang

  • 3D hierarchical defect-rich NiMo3S4 nanosheet arrays grown on carbon textiles for high-performance sodium-ion batteries and hydrogen evolution reaction

    Dezhi Kong;Ye Wang;Yew Von Lim;Shaozhuan Huang

  • Bifunctional porous iron phosphide/carbon nanostructure enabled high-performance sodium-ion battery and hydrogen evolution reaction

    Yew Von Lim;Shaozhuan Huang;Yingmeng Zhang;Dezhi Kong

  • An extended `quantum confinement' theory: surface-coordination imperfection modifies the entire band structure of a nanosolid

    Chang Q. Sun;T. P. Chen;B. K. Tay;S. Li

  • Refractive indices of textured indium tin oxide and zinc oxide thin films

    Y. Yang;X.W. Sun;B.J. Chen;C.X. Xu

  • Two dimensional layered Co0.85Se nanosheets as a high-capacity anode for lithium-ion batteries.

    Jisheng Zhou;Jisheng Zhou;Ye Wang;Jun Zhang;Tupei Chen

Frequent Co-Authors

Ming Yang
Ming Yang Hong Kong Polytechnic University
Sam Zhang
Sam Zhang Nanyang Technological University
Hui Ying Yang
Hui Ying Yang National University of Singapore
Chang Q. Sun
Chang Q. Sun Nanyang Technological University
Jun Zhang
Jun Zhang Nanyang Technological University
Pooi See Lee
Pooi See Lee Nanyang Technological University
Ampere A. Tseng
Ampere A. Tseng Arizona State University
Siu Fung Yu
Siu Fung Yu Hong Kong Polytechnic University
Lap Chan
Lap Chan Independent Scientist / Consultant, Singapore
Yong Qing Fu
Yong Qing Fu Northumbria University

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