World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
41
Citations
6286
World Ranking
7018
National Ranking
87

Lap Chan publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Lap Chan sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 311 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Lap Chan D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Lap Chan sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 41 D-Index — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Lap Chan is an independent scientist and consultant based in Singapore, specializing in the field of social sciences with a focus on sociology and political science, development, and international relations. Their research spans multiple subfields including political science and international relations, aerospace engineering, and astronomy and astrophysics.

The scientist's work covers several main topics, notably international development and aid, peacebuilding and international security, global security and public health, international relations and foreign policy, migration, refugees, and integration, as well as Foucault, power, and ethics. Additionally, they have contributed to Asian geopolitics and ethnography.

Lap Chan has published extensively, with articles appearing in a variety of scholarly venues. Frequent publications include:

  • Australian Journal Of International Affairs (2 publications)
  • Global Change Peace & Security
  • Asia policy
  • East Asia
  • IOP Conference Series Materials Science and Engineering

Key recent papers authored by Lap Chan include:

  • "Can China remake regional order? Contestation with India over the Belt and Road Initiative," 2020, Global Change Peace & Security
  • "Strategic Hedging: A 'Third Way' for Australian Foreign Policy in the Indo-Pacific," 2020, Asia Policy
  • "The promise of AUKUS: implications of its minilateral institutional form," 2024, Australian Journal Of International Affairs
  • "The Rise of Xenophobia and Nationalism in China Since the COVID Pandemic: Insights from Discourse Analysis," 2023, East Asia
  • "Quad 2.0 in flux, how possible? A study of India's changing 'significant other'," 2023, Australian Journal Of International Affairs

Collaboration is an element of Lap Chan's research, working frequently with co-authors such as Pak K. Lee, Maria Rost Rublee, Ian M. McKinley, Jose Israel Rodriguez, and G. Allen. These collaborative efforts have contributed to the diversity of topics and analytical perspectives in their published work.

Best Publications

  • Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer

    Cher Liang Cha;Alex See;Lap Chan

  • Creation of a self-aligned, ion implanted channel region, after source and drain formation

    Teck Koon Lee;Lap Chan;Chock H. Gan;Po-Ching Liu

  • Method for shallow trench isolation

    Jia Zhen Zheng;Charlie Wee Song Tay;Wei Lu;Lap Chan

  • Passivation of copper interconnect surfaces with a passivating metal layer

    Lap Chan;Kuan Pei Yap;Kheng Chok Tee;Flora S. Ip

  • Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

    Eng-Huat Toh;Grace Huiqi Wang;Lap Chan;Ganesh Samudra

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding

  • Method to form a self-aligned CMOS inverter using vertical device integration

    Ravi Sundaresan;Yang Pan;James Yong Meng Lee;Ying Keung Leung

  • Antifuse structure and method for manufacturing it

    Jiazhen Zheng;Lap Chan

  • A method to form a transistor with multiple threshold voltages using a combination of different work function gate materials

    Lap Chan;Elgin Quek;Ravi Sundaresan;Yang Pan

  • Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

    Eng Huat Toh;Grace Huiqi Wang;Lap Chan;Dennis Sylvester

  • Laser curing of spin-on dielectric thin films

    Chee Tee Chua;Yuan-Ping Lee;Mei Sheng Zhou;Lap Chan

  • Back gate contact for silicon on insulator technology

    Chan Lap;Sundaresan Ravishankar;Wei Che Chia

  • Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

    Y. F. Chong;K. L. Pey;A. T. S. Wee;A. See

  • Method to form, and structure of, a dual damascene interconnect device

    Shyue Fong Quek;Ting Cheong Ang;Lap Chan;Sang Yee Loong

  • Method for fabricating semiconductor devices with reduced junction diffusion

    Benjamin Colombeau;Sai Hooi Yeong;Francis Benistant;Bangun Indajang

  • Method for making improved shallow trench isolation for semiconductor integrated circuits

    Poh Suan Tan;Lap Chan;Qinghua Zhong;Qian Gang

  • Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

    Shyue Seng Tan;T. P. Chen;Jia Mei Soon;Kian Ping Loh

  • Method for fabricating a MOS device

    Lap Chan;Ting Cheong Ang;Shyue Pong Quek;Sang Yee Loong

  • Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant

    Randall Cher Liang Cha;Tae Jong Lee;Alex See;Lap Chan

  • Nanocrystal flash memory device and manufacturing method therefor

    Wee Kiong Choi;Wai Kin Chim;Vivian Ng;Lap Chan

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design
M.P. Srinivasan
M.P. Srinivasan RMIT University
Hao Gong
Hao Gong National University of Singapore
Jun Ding
Jun Ding National University of Singapore
Pooi See Lee
Pooi See Lee Nanyang Technological University
Kian Ping Loh
Kian Ping Loh National University of Singapore
Zexiang Shen
Zexiang Shen Nanyang Technological University
Jiabao Yi
Jiabao Yi University of Newcastle Australia

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Best Scientists Citing Lap Chan