D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 36 Citations 5,041 259 World Ranking 4948 National Ranking 59

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Integrated circuit
  • Transistor

His primary areas of study are Optoelectronics, Electronic engineering, Layer, Gate oxide and MOSFET. He has included themes like Metal gate, Polysilicon depletion effect, Transistor, Substrate and Electrical engineering in his Optoelectronics study. His work carried out in the field of Transistor brings together such families of science as Nanotechnology, Silicon-germanium, Quantum tunnelling, CMOS and Band gap.

His Electronic engineering research integrates issues from Silicon, Copper interconnect, Sheet resistance, Salicide and Insulator. Lap Chan has researched Layer in several fields, including Electrode, Dielectric and Voltage. The MOSFET study combines topics in areas such as Silicon on insulator, Atomic physics and First principle.

His most cited work include:

  • Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer (235 citations)
  • Method for planarized interconnect vias using electroless plating and CMP (175 citations)
  • Creation of a self-aligned, ion implanted channel region, after source and drain formation (162 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Layer, Electronic engineering, Silicon and Analytical chemistry. His Optoelectronics study combines topics in areas such as Transistor, Substrate, Gate oxide, MOSFET and Electrical engineering. Lap Chan has researched Layer in several fields, including Oxide and Electrode.

His Electronic engineering research incorporates themes from Sheet resistance, Photoresist, Semiconductor and Integrated circuit. As part of one scientific family, Lap Chan deals mainly with the area of Silicon, narrowing it down to issues related to the Ion implantation, and often Dopant. His research in Analytical chemistry intersects with topics in Wafer, Annealing and Copper.

He most often published in these fields:

  • Optoelectronics (55.73%)
  • Layer (24.20%)
  • Electronic engineering (22.93%)

What were the highlights of his more recent work (between 2006-2012)?

  • Optoelectronics (55.73%)
  • Transistor (15.29%)
  • MOSFET (16.56%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Transistor, MOSFET, Silicon and Impact ionization are his primary areas of study. Lap Chan studies CMOS, a branch of Optoelectronics. His work carried out in the field of Transistor brings together such families of science as Band gap and Silicon-germanium.

His studies in MOSFET integrate themes in fields like Silicon on insulator, Stress, Composite material and Gate oxide. His Silicon research is multidisciplinary, incorporating perspectives in Ion implantation, Dopant Activation, Dopant and Annealing. Lap Chan combines subjects such as Epitaxy and Strain engineering with his study of Impact ionization.

Between 2006 and 2012, his most popular works were:

  • Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction (91 citations)
  • Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source (89 citations)
  • Method for fabricating semiconductor devices with reduced junction diffusion (58 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Lap Chan mostly deals with Optoelectronics, Transistor, Silicon, Nanotechnology and Field-effect transistor. Lap Chan has included themes like Breakdown voltage, MOSFET, Threshold voltage, Static induction transistor and Strain engineering in his Optoelectronics study. His MOSFET study is concerned with the field of Electrical engineering as a whole.

His Transistor research incorporates elements of Ultimate tensile strength, Impact ionization, Silicon-germanium, CMOS and Band gap. His CMOS research is multidisciplinary, incorporating elements of Substrate and Semiconductor device. His work deals with themes such as Condensed matter physics, Doping, Annealing, Ion implantation and Schottky barrier, which intersect with Silicon.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer

Cher Liang Cha;Alex See;Lap Chan.
(2000)

361 Citations

Method for planarized interconnect vias using electroless plating and CMP

Chan Lap;Tee Ng Hou.
(1997)

266 Citations

Creation of a self-aligned, ion implanted channel region, after source and drain formation

Teck Koon Lee;Lap Chan;Chock H. Gan;Po-Ching Liu.
(1997)

243 Citations

Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance

Wong Harianto;Pey Kin Leong;Chen Lap.
(1997)

173 Citations

Method for shallow trench isolation

Jia Zhen Zheng;Charlie Wee Song Tay;Wei Lu;Lap Chan.
(1997)

164 Citations

Passivation of copper interconnect surfaces with a passivating metal layer

Lap Chan;Kuan Pei Yap;Kheng Chok Tee;Flora S. Ip.
(1998)

144 Citations

Method to form a self-aligned CMOS inverter using vertical device integration

Ravi Sundaresan;Yang Pan;James Yong Meng Lee;Ying Keung Leung.
(2002)

137 Citations

New salicidation technology with Ni(Pt) alloy for MOSFETs

P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding.
IEEE Electron Device Letters (2001)

132 Citations

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

Eng-Huat Toh;Grace Huiqi Wang;Lap Chan;Ganesh Samudra.
Applied Physics Letters (2007)

132 Citations

A method to form a transistor with multiple threshold voltages using a combination of different work function gate materials

Lap Chan;Elgin Quek;Ravi Sundaresan;Yang Pan.
(2002)

125 Citations

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