World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
41
Citations
6286
World Ranking
7015
National Ranking
86

Overview

Lap Chan is an independent scientist and consultant based in Singapore, specializing in the field of social sciences with a focus on sociology and political science, development, and international relations. Their research spans multiple subfields including political science and international relations, aerospace engineering, and astronomy and astrophysics.

The scientist's work covers several main topics, notably international development and aid, peacebuilding and international security, global security and public health, international relations and foreign policy, migration, refugees, and integration, as well as Foucault, power, and ethics. Additionally, they have contributed to Asian geopolitics and ethnography.

Lap Chan has published extensively, with articles appearing in a variety of scholarly venues. Frequent publications include:

  • Australian Journal Of International Affairs (2 publications)
  • Global Change Peace & Security
  • Asia policy
  • East Asia
  • IOP Conference Series Materials Science and Engineering

Key recent papers authored by Lap Chan include:

  • "Can China remake regional order? Contestation with India over the Belt and Road Initiative," 2020, Global Change Peace & Security
  • "Strategic Hedging: A 'Third Way' for Australian Foreign Policy in the Indo-Pacific," 2020, Asia Policy
  • "The promise of AUKUS: implications of its minilateral institutional form," 2024, Australian Journal Of International Affairs
  • "The Rise of Xenophobia and Nationalism in China Since the COVID Pandemic: Insights from Discourse Analysis," 2023, East Asia
  • "Quad 2.0 in flux, how possible? A study of India's changing 'significant other'," 2023, Australian Journal Of International Affairs

Collaboration is an element of Lap Chan's research, working frequently with co-authors such as Pak K. Lee, Maria Rost Rublee, Ian M. McKinley, Jose Israel Rodriguez, and G. Allen. These collaborative efforts have contributed to the diversity of topics and analytical perspectives in their published work.

Best Publications

  • Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer

    Cher Liang Cha;Alex See;Lap Chan

  • Creation of a self-aligned, ion implanted channel region, after source and drain formation

    Teck Koon Lee;Lap Chan;Chock H. Gan;Po-Ching Liu

  • Method for shallow trench isolation

    Jia Zhen Zheng;Charlie Wee Song Tay;Wei Lu;Lap Chan

  • Passivation of copper interconnect surfaces with a passivating metal layer

    Lap Chan;Kuan Pei Yap;Kheng Chok Tee;Flora S. Ip

  • Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

    Eng-Huat Toh;Grace Huiqi Wang;Lap Chan;Ganesh Samudra

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding

  • Method to form a self-aligned CMOS inverter using vertical device integration

    Ravi Sundaresan;Yang Pan;James Yong Meng Lee;Ying Keung Leung

  • Antifuse structure and method for manufacturing it

    Jiazhen Zheng;Lap Chan

  • A method to form a transistor with multiple threshold voltages using a combination of different work function gate materials

    Lap Chan;Elgin Quek;Ravi Sundaresan;Yang Pan

  • Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

    Eng Huat Toh;Grace Huiqi Wang;Lap Chan;Dennis Sylvester

  • Laser curing of spin-on dielectric thin films

    Chee Tee Chua;Yuan-Ping Lee;Mei Sheng Zhou;Lap Chan

  • Back gate contact for silicon on insulator technology

    Chan Lap;Sundaresan Ravishankar;Wei Che Chia

  • Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

    Y. F. Chong;K. L. Pey;A. T. S. Wee;A. See

  • Method to form, and structure of, a dual damascene interconnect device

    Shyue Fong Quek;Ting Cheong Ang;Lap Chan;Sang Yee Loong

  • Method for fabricating semiconductor devices with reduced junction diffusion

    Benjamin Colombeau;Sai Hooi Yeong;Francis Benistant;Bangun Indajang

  • Method for making improved shallow trench isolation for semiconductor integrated circuits

    Poh Suan Tan;Lap Chan;Qinghua Zhong;Qian Gang

  • Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

    Shyue Seng Tan;T. P. Chen;Jia Mei Soon;Kian Ping Loh

  • Method for fabricating a MOS device

    Lap Chan;Ting Cheong Ang;Shyue Pong Quek;Sang Yee Loong

  • Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant

    Randall Cher Liang Cha;Tae Jong Lee;Alex See;Lap Chan

  • Nanocrystal flash memory device and manufacturing method therefor

    Wee Kiong Choi;Wai Kin Chim;Vivian Ng;Lap Chan

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design
M.P. Srinivasan
M.P. Srinivasan RMIT University
Hao Gong
Hao Gong National University of Singapore
Jun Ding
Jun Ding National University of Singapore
Pooi See Lee
Pooi See Lee Nanyang Technological University
Kian Ping Loh
Kian Ping Loh National University of Singapore
Zexiang Shen
Zexiang Shen Nanyang Technological University
Jiabao Yi
Jiabao Yi University of Newcastle Australia

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Best Scientists Citing Lap Chan