Mark L. Doczy

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Transistor
• Silicon

Mark L. Doczy focuses on Optoelectronics, Gate oxide, Layer, Gate dielectric and Semiconductor device. His Optoelectronics study integrates concerns from other disciplines, such as Metal gate, Transistor and Substrate. His biological study spans a wide range of topics, including PMOS logic, Dielectric layer, Metal and Polysilicon depletion effect.

The Transistor study combines topics in areas such as Substrate, Nanotechnology, Silicon and Engineering physics. In Gate dielectric, he works on issues like High-κ dielectric, which are connected to Time-dependent gate oxide breakdown, Silicon dioxide, Atomic layer deposition and Zirconium dioxide. His study focuses on the intersection of Semiconductor device and fields such as Trench with connections in the field of Hard mask.

His most cited work include:

• Nonplanar transistors with metal gate electrodes (390 citations)
• Method for making a semiconductor device having a high-k gate dielectric (257 citations)
• Block Contact Architectures for Nanoscale Channel Transistors (217 citations)

What are the main themes of his work throughout his whole career to date?

Mark L. Doczy spends much of his time researching Optoelectronics, Layer, Gate oxide, Gate dielectric and Metal gate. His Optoelectronics research incorporates elements of Transistor, Semiconductor device and Metal. His work carried out in the field of Transistor brings together such families of science as CMOS, Nanotechnology and Work function.

His work on Substrate and Tunnel magnetoresistance as part of general Layer research is frequently linked to Stack and Perpendicular, bridging the gap between disciplines. Mark L. Doczy combines subjects such as High-κ dielectric and Semiconductor with his study of Gate dielectric. His Metal gate research integrates issues from PMOS logic, NMOS logic and Polysilicon depletion effect.

He most often published in these fields:

• Optoelectronics (72.45%)
• Layer (53.57%)
• Gate oxide (28.06%)

What were the highlights of his more recent work (between 2015-2019)?

• Layer (53.57%)
• Optoelectronics (72.45%)
• Tunnel magnetoresistance (16.84%)

In recent papers he was focusing on the following fields of study:

Mark L. Doczy mostly deals with Layer, Optoelectronics, Tunnel magnetoresistance, Stack and Perpendicular. Substrate is the focus of his Layer research. His Optoelectronics study deals with Electrical conductor intersecting with Nano-.

His Tunnel magnetoresistance research includes elements of Magnetic layer, Tunnel barrier and Cobalt. His Metal study integrates concerns from other disciplines, such as Thermal conduction and Low resistance. His work is dedicated to discovering how Composite material, Dielectric are connected with Semiconductor device, Protection layer and Pillar and other disciplines.

Between 2015 and 2019, his most popular works were:

• Approaches for strain engineering of perpendicular magnetic tunnel junctions (pmtjs) and the resulting structures (8 citations)
• Ferromagnetic resonance testing of buried magnetic layers of whole wafer (5 citations)
• SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETORESISTANCE RATIO AND THEIR METHODS OF FABRICATION (4 citations)

In his most recent research, the most cited papers focused on:

• Semiconductor
• Layer
• Silicon

His primary areas of investigation include Layer, Tunnel magnetoresistance, Optoelectronics, Perpendicular and Substrate. The Layer study combines topics in areas such as Alloy, Spin-transfer torque, Quantum tunnelling and Dielectric. His research integrates issues of Semiconductor device, Pillar and Protection layer in his study of Dielectric.

As a part of the same scientific study, Mark L. Doczy usually deals with the Tunnel magnetoresistance, concentrating on Magnetic layer and frequently concerns with Thermal stability and Spin orbit torque. His work on Dielectric layer as part of general Optoelectronics study is frequently connected to Stack, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His Dielectric layer research is multidisciplinary, incorporating perspectives in Electrical conductor and Diffusion barrier.