World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8518
World Ranking
3094
National Ranking
1162

Materials Science

D-Index
48
Citations
8555
World Ranking
10833
National Ranking
2557

matthew v metz publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where matthew v metz sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 137 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

matthew v metz D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where matthew v metz sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Integrated circuit

Matthew V. Metz focuses on Optoelectronics, High-κ dielectric, Gate dielectric, Gate oxide and Transistor. His Optoelectronics study combines topics from a wide range of disciplines, such as Field-effect transistor, Metal gate, Substrate and PMOS logic. His studies deal with areas such as Inorganic chemistry, Zirconium and Logic gate as well as High-κ dielectric.

His Gate oxide research incorporates elements of Electronic engineering and Semiconductor device. His study with Transistor involves better knowledge in Electrical engineering. Matthew V. Metz has researched Nanotechnology in several fields, including Electronic circuit, Moore's law and Subthreshold slope.

His most cited work include:

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications (592 citations)
  • High-/spl kappa//metal-gate stack and its MOSFET characteristics (365 citations)
  • Method for making a semiconductor device having a high-k gate dielectric (257 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Transistor, Layer, Gate dielectric and Substrate. His research integrates issues of Semiconductor device, Electrical engineering and Gate oxide in his study of Optoelectronics. His research in Gate oxide intersects with topics in Electron mobility, Electronic engineering and Silicon, Silicon-germanium.

His studies in Transistor integrate themes in fields like CMOS and Nanotechnology. His study on Trench, Substrate and Barrier layer is often connected to Stack as part of broader study in Layer. His Substrate study which covers Chemical engineering that intersects with Inorganic chemistry.

He most often published in these fields:

  • Optoelectronics (76.69%)
  • Transistor (39.10%)
  • Layer (36.09%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (76.69%)
  • Transistor (39.10%)
  • Gate dielectric (34.59%)

In recent papers he was focusing on the following fields of study:

Matthew V. Metz mainly focuses on Optoelectronics, Transistor, Gate dielectric, Communication channel and Layer. His study in Optoelectronics is interdisciplinary in nature, drawing from both Semiconductor device, Substrate and NMOS logic. His research investigates the connection between Semiconductor device and topics such as Field-effect transistor that intersect with problems in Trench.

His work deals with themes such as Moore's law, CMOS, Metal gate and Inverter, which intersect with NMOS logic. His research related to PMOS logic and Gate oxide might be considered part of Transistor. His Gate oxide research includes elements of Nanowire, Semiconductor and Metal electrodes.

Between 2019 and 2021, his most popular works were:

  • High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors (1 citations)
  • 3-D Self-aligned Stacked NMOS-on-PMOS Nanoribbon Transistors for Continued Moore’s Law Scaling (1 citations)
  • CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist (1 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

His primary areas of investigation include Optoelectronics, Semiconductor, Communication channel, Transistor and Logic gate. The concepts of his Optoelectronics study are interwoven with issues in Moore's law and Substrate, Gate oxide. His work carried out in the field of Moore's law brings together such families of science as Metal gate, NMOS logic, CMOS, PMOS logic and Inverter.

His Substrate research includes themes of Field-effect transistor, Trench, Semiconductor device and Buffer. His research on Gate oxide often connects related areas such as Ferroelectricity. His studies in Integrated circuit integrate themes in fields like Self-aligned gate and Fin.

Best Publications

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • High-/spl kappa//metal-gate stack and its MOSFET characteristics

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

    G. Dewey;B. Chu-Kung;J. Boardman;J. M. Fastenau

  • Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

    J. Kavalieros;B. Doyle;S. Datta;G. Dewey

  • Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

    Justin K. Brask;Jack Kavalieros;Mark L. Doczy;Uday Shah

  • Method for making a semiconductor device having a high-k gate dielectric

    Mark L. Doczy;Gilbert Dewey;Suman Datta;Sangwoo Pae

  • Atomic layer deposition of high dielectric constant gate dielectrics

    Matthew Metz;Clifford Boyd;Markus Kuhn;Suman Datta

  • Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications

    M. Radosavljevic;B. Chu-Kung;S. Corcoran;G. Dewey

  • Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate

    Jack Kavalieros;Annalisa Cappellani;Justin K. Brask;Mark L. Doczy

  • Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

    Robert Chau;Justin Brask;Suman Datta;Gilbert Dewey

  • Replacement gate process for making a semiconductor device that includes a metal gate electrode

    Uday Shah;Chris E. Barns;Mark L. Doczy;Justin K. Brask

  • Process for integrating planar and non-planar cmos transistors on a bulk substrate and article made thereby

    Jack T. Kavalieros;Justin K. Brask;Brian S. Doyle;Uday Shah

  • Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

    M. Radosavljevic;G. Dewey;D. Basu;J. Boardman

  • High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

    R. Pillarisetty;B. Chu-Kung;S. Corcoran;G. Dewey

  • Semiconductor device with a high-k gate dielectric and a metal gate electrode

    Mark L. Doczy;Jack Kavalieros;Matthew V. Metz;Justin K. Brask

  • BTI reliability of 45 nm high-K + metal-gate process technology

    S. Pae;M. Agostinelli;M. Brazier;R. Chau

  • Field effect transistor with narrow bandgap source and drain regions and method of fabrication

    Robert S. Chau;Suman Datta;Jack Kavalieros;Justin K. Brask

  • Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

    M. Radosavljevic;G. Dewey;J. M. Fastenau;J. Kavalieros

  • 300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications

    W. Rachmady;K. Jun;B. Krist;M. Metz

  • High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack

    S. Datta;G. Dewey;M. Doczy;B.S. Doyle

Frequent Co-Authors

jack t kavalieros
jack t kavalieros Intel (United States)
Robert S. Chau
Robert S. Chau Intel (United States)
Suman Datta
Suman Datta Georgia Institute of Technology
Mark L. Doczy
Mark L. Doczy Intel (United States)
Justin K. Brask
Justin K. Brask Intel (United States)
Marko Radosavljevic
Marko Radosavljevic Intel (United States)
Uday Shah
Uday Shah Intel (United States)
Tahir Ghani
Tahir Ghani Intel (United States)
Anand S. Murthy
Anand S. Murthy Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)

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