World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
14572
World Ranking
2044
National Ranking
106

Materials Science

D-Index
53
Citations
13719
World Ranking
9093
National Ranking
367

Asen Asenov publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Asen Asenov sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 804 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Asen Asenov D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Asen Asenov sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2011 - IEEE Fellow For contributions to the understanding and prediction of semiconductor device variability via modeling and simulation
  • 2004 - Fellow of the Royal Society of Edinburgh

Overview

Asen Asenov is affiliated with the University of Glasgow in the United Kingdom and has contributed extensively to the field of engineering, with a primary focus on electrical and electronic engineering. Their research spans various subfields including materials chemistry, biomedical engineering, atomic and molecular physics, optics, and inorganic chemistry.

Their main topics of work include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Quantum and electron transport phenomena
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies

Asenov's publication record features papers in several notable venues, with frequent contributions to:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • Micromachines
  • Semiconductor Science and Technology
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Some of the recent papers authored include:

  • "Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform", 2020, Journal of Computational Electronics
  • "Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation-Part I: CNFET Transistor Optimization", 2022, IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • "A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs", 2020, IEEE Transactions on Electron Devices
  • "Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework", 2021, Micromachines
  • "Convolutional Machine Learning Method for Accelerating Nonequilibrium Green's Function Simulations in Nanosheet Transistor", 2023, IEEE Transactions on Electron Devices

They have collaborated regularly with several coauthors including Vihar Georgiev, Tapas Dutta, Cristina Medina-Bailón, Ali Rezaei, and Fikru Adamu-Lema, reflecting a broad network of joint research efforts.

Acknowledgements of their career achievements include being named an IEEE Fellow in 2011 for contributions to understanding and predicting semiconductor device variability through modeling and simulation. Additionally, Asenov was elected as a Fellow of the Royal Society of Edinburgh in 2004.

Best Publications

  • Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study

    A. Asenov

  • Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

    A. Asenov;S. Kaya;A.R. Brown

  • Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

    A. Asenov;A.R. Brown;J.H. Davies;S. Kaya

  • Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

    Christoph Busche;Laia Vilà-Nadal;Jun Yan;Haralampos N. Miras

  • Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

    G. Roy;A.R. Brown;F. Adamu-Lema;S. Roy

  • RTS amplitudes in decananometer MOSFETs: 3-D simulation study

    A. Asenov;R. Balasubramaniam;A.R. Brown;J.H. Davies

  • Statistical variability and reliability in nanoscale FinFETs

    Xingsheng Wang;Andrew R. Brown;Binjie Cheng;Asen Asenov

  • Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

    A. Asenov;S. Kaya;J.H. Davies

  • Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

    A. Asenov;G. Slavcheva;A.R. Brown;J.H. Davies

  • Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and /spl delta/-doped channels

    A. Asenov;S. Saini

  • Si/SiGe heterostructure parameters for device simulations

    Lianfeng Yang;Jeremy R Watling;Richard C W Wilkins;Mirela Boriçi

  • Where do the dopants go

    Scott Roy;Asen Asenov

  • A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

    A. Martinez;M. Bescond;J.R. Barker;A. Svizhenko

  • Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$ , and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

    R.J.W. Hill;D.A.J. Moran;Xu Li;Haiping Zhou

  • Simulation of Statistical Variability in Nano MOSFETs

    A. Asenov

  • Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

    A.R. Brown;G. Roy;A. Asenov

  • Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

    Xingsheng Wang;A. R. Brown;N. Idris;S. Markov

  • Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

    Andrew R Brown;Niza M Idris;Jeremy R Watling;Asen Asenov

  • Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

    A.R. Brown;A. Asenov;J.R. Watling

  • The impact of random doping effects on CMOS SRAM cell

    B. Cheng;S. Roy;A. Asenov

Frequent Co-Authors

John R. Barker
John R. Barker University of Michigan–Ann Arbor
Francisco Gamiz
Francisco Gamiz University of Granada
Ru Huang
Ru Huang Peking University
Leroy Cronin
Leroy Cronin University of Glasgow
Alexander L. Shluger
Alexander L. Shluger University College London

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