D-Index & Metrics Best Publications
Electronics and Electrical Engineering
UK
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 54 Citations 12,525 718 World Ranking 1397 National Ranking 76
Materials Science D-index 45 Citations 9,091 514 World Ranking 8414 National Ranking 364

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in United Kingdom Leader Award

2011 - IEEE Fellow For contributions to the understanding and prediction of semiconductor device variability via modeling and simulation

2004 - Fellow of the Royal Society of Edinburgh

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Electrical engineering

Asen Asenov mainly investigates MOSFET, Electronic engineering, Threshold voltage, Optoelectronics and Transistor. His MOSFET research is multidisciplinary, relying on both Field-effect transistor, Condensed matter physics, Computer simulation, Dopant and CMOS. His work on Doping as part of general Condensed matter physics study is frequently linked to Trapping, bridging the gap between disciplines.

His study in Electronic engineering is interdisciplinary in nature, drawing from both Metal gate, Computational physics, Granularity and Silicon on insulator. The various areas that Asen Asenov examines in his Threshold voltage study include Surface finish, Logic gate and Standard deviation. His research integrates issues of Electrical engineering and Scaling in his study of Optoelectronics.

His most cited work include:

  • Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study (589 citations)
  • Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness (506 citations)
  • Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (494 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Electronic engineering, MOSFET, Optoelectronics, Transistor and Monte Carlo method. The study incorporates disciplines such as Silicon on insulator and Computational physics in addition to Electronic engineering. The concepts of his MOSFET study are interwoven with issues in Statistical physics, Condensed matter physics, Dopant, Threshold voltage and Scaling.

His Optoelectronics research is multidisciplinary, incorporating perspectives in Gate dielectric, Communication channel and Electrical engineering. His work carried out in the field of Transistor brings together such families of science as Nanowire, Nanotechnology, Quantum tunnelling and Reliability. The concepts of his Monte Carlo method study are interwoven with issues in Electron mobility, Scattering and Nanoelectronics.

He most often published in these fields:

  • Electronic engineering (36.49%)
  • MOSFET (33.55%)
  • Optoelectronics (31.63%)

What were the highlights of his more recent work (between 2015-2021)?

  • Transistor (27.53%)
  • Electronic engineering (36.49%)
  • Optoelectronics (31.63%)

In recent papers he was focusing on the following fields of study:

Asen Asenov mostly deals with Transistor, Electronic engineering, Optoelectronics, Nanowire and Monte Carlo method. His work deals with themes such as Computational physics, CMOS, Quantum tunnelling and Figure of merit, which intersect with Transistor. He has researched Electronic engineering in several fields, including Dram, Resistive touchscreen and Resistive random-access memory.

Asen Asenov combines subjects such as AND gate, Nanotechnology, Threshold voltage, Vacancy defect and Reliability with his study of Optoelectronics. His study connects MOSFET and Threshold voltage. His studies in Nanowire integrate themes in fields like Silicon, Quantum dot, Node, Condensed matter physics and Dopant.

Between 2015 and 2021, his most popular works were:

  • Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM (20 citations)
  • Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. (17 citations)
  • A Survey of Carbon Nanotube Interconnects for Energy Efficient Integrated Circuits (17 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Transistor

Asen Asenov spends much of his time researching Transistor, Logic gate, Electronic engineering, Nanowire and Quantum tunnelling. His Transistor research incorporates themes from Figure of merit, Condensed matter physics, Silicon and Monte Carlo method. The study incorporates disciplines such as Surface roughness, Scattering and Threshold voltage in addition to Condensed matter physics.

His work carried out in the field of Logic gate brings together such families of science as Dram, Optoelectronics, eDRAM, Silicon on insulator and Gate dielectric. His studies deal with areas such as Standard deviation, Reduction, Sigma, MOSFET and Gate oxide as well as Gate dielectric. His work in the fields of Electronic engineering, such as CMOS, overlaps with other areas such as Margin.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study

A. Asenov.
IEEE Transactions on Electron Devices (1998)

821 Citations

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

A. Asenov;A.R. Brown;J.H. Davies;S. Kaya.
IEEE Transactions on Electron Devices (2003)

715 Citations

Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

A. Asenov;S. Kaya;A.R. Brown.
IEEE Transactions on Electron Devices (2003)

707 Citations

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

G. Roy;A.R. Brown;F. Adamu-Lema;S. Roy.
IEEE Transactions on Electron Devices (2006)

342 Citations

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

A. Asenov;R. Balasubramaniam;A.R. Brown;J.H. Davies.
IEEE Transactions on Electron Devices (2003)

307 Citations

Statistical variability and reliability in nanoscale FinFETs

Xingsheng Wang;Andrew R. Brown;Binjie Cheng;Asen Asenov.
international electron devices meeting (2011)

299 Citations

Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

A. Asenov;S. Kaya;J.H. Davies.
IEEE Transactions on Electron Devices (2002)

288 Citations

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Christoph Busche;Laia Vilà-Nadal;Jun Yan;Haralampos N. Miras.
Nature (2014)

283 Citations

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

A. Asenov;G. Slavcheva;A.R. Brown;J.H. Davies.
IEEE Transactions on Electron Devices (2001)

277 Citations

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and /spl delta/-doped channels

A. Asenov;S. Saini.
IEEE Transactions on Electron Devices (1999)

242 Citations

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