Asen Asenov

Research.com Recognitions

• 2011 - IEEE Fellow For contributions to the understanding and prediction of semiconductor device variability via modeling and simulation
• 2004 - Fellow of the Royal Society of Edinburgh

Overview

Best Publications

• Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study

  A. Asenov

  842
  Citations

• Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

  A. Asenov;S. Kaya;A.R. Brown

  739
  Citations

• Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

  A. Asenov;A.R. Brown;J.H. Davies;S. Kaya

  735
  Citations

• Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

  Christoph Busche;Laia Vilà-Nadal;Jun Yan;Haralampos N. Miras

  356
  Citations

• Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

  G. Roy;A.R. Brown;F. Adamu-Lema;S. Roy

  347
  Citations

• RTS amplitudes in decananometer MOSFETs: 3-D simulation study

  A. Asenov;R. Balasubramaniam;A.R. Brown;J.H. Davies

  330
  Citations

• Statistical variability and reliability in nanoscale FinFETs

  Xingsheng Wang;Andrew R. Brown;Binjie Cheng;Asen Asenov

  324
  Citations

• Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

  A. Asenov;S. Kaya;J.H. Davies

  299
  Citations

• Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

  A. Asenov;G. Slavcheva;A.R. Brown;J.H. Davies

  284
  Citations

• Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and /spl delta/-doped channels

  A. Asenov;S. Saini

  245
  Citations

• Si/SiGe heterostructure parameters for device simulations

  Lianfeng Yang;Jeremy R Watling;Richard C W Wilkins;Mirela Boriçi

  220
  Citations

• Where do the dopants go

  Scott Roy;Asen Asenov

  179
  Citations

• A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

  A. Martinez;M. Bescond;J.R. Barker;A. Svizhenko

  177
  Citations

• Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$ , and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

  R.J.W. Hill;D.A.J. Moran;Xu Li;Haiping Zhou

  166
  Citations

• Simulation of Statistical Variability in Nano MOSFETs

  A. Asenov

  166
  Citations

• Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

  A.R. Brown;G. Roy;A. Asenov

  163
  Citations

• Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study

  Xingsheng Wang;A. R. Brown;N. Idris;S. Markov

  157
  Citations

• Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

  Andrew R Brown;Niza M Idris;Jeremy R Watling;Asen Asenov

  141
  Citations

• Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

  A.R. Brown;A. Asenov;J.R. Watling

  128
  Citations

• The impact of random doping effects on CMOS SRAM cell

  B. Cheng;S. Roy;A. Asenov

  121
  Citations