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Materials Science

D-Index
76
Citations
22568
World Ranking
3257
National Ranking
136

Research.com Recognitions

  • 2011 - Fellow of American Physical Society (APS) Citation For contributions to the theory of local excited states and atomic forces at insulating surfaces

Overview

Alexander L. Shluger is affiliated with University College London in the United Kingdom. Their research primarily focuses on materials science and engineering, with significant contributions to materials chemistry, electrical and electronic engineering, and related subfields.

Their publications cover several core topics including semiconductor materials and devices, microstructure and mechanical properties, electronic and structural properties of oxides, advanced photocatalysis techniques, advanced memory and neural computing, 2D materials and applications, and ferroelectric and negative capacitance devices.

Frequent publication venues for Shluger's work include Physical Review B, The Journal of Physical Chemistry C, Physical Review Materials, arXiv (Cornell University), and ECS Meeting Abstracts.

The scientist has collaborated frequently with a range of co-authors including Jack Strand, Vasileios Fotopoulos, Luca Larcher, David Mora-Fonz, and Thomas R. Durrant.

Some recent papers authored or co-authored by Shluger are:

  • Roadmap on multiscale materials modeling (2020), published in Modelling and Simulation in Materials Science and Engineering
  • Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation (2022), published in Journal of Applied Physics
  • Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals (2020), published in Acta Materialia
  • Effect of electric field on defect generation and migration in HfO2 (2020), published in Physical Review B
  • Energies and structures of Cu/Nb and Cu/W interfaces from density functional theory and semi-empirical calculations (2022), published in Materialia

Alexander L. Shluger has been recognized as a Fellow of the American Physical Society in 2011. The citation for this award mentioned contributions to the theory of local excited states and atomic forces at insulating surfaces.

Best Publications

  • Vacancy and interstitial defects in hafnia

    Adam S. Foster;F. Lopez Gejo;Alexander L. Shluger;Risto M. Nieminen

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Theories of scanning probe microscopes at the atomic scale

    Werner A. Hofer;Adam S. Foster;Alexander L. Shluger

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

    J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

  • Structure and electrical levels of point defects in monoclinic zirconia

    Adam S. Foster;V. B. Sulimov;F. Lopez Gejo;A. L. Shluger

  • Relative energies of surface and defect states: ab initio calculations for the MgO (001) surface

    Peter V. Sushko;Peter V. Sushko;Alexander L. Shluger;C.Richard A. Catlow

  • Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

    J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

  • Crystallographic phase transition and high-Tc superconductivity in LaFeAsO:F

    T Nomura;S W Kim;Y Kamihara;M Hirano

  • Trapping, self-trapping and the polaron family

    A M Stoneham;J Gavartin;A L Shluger;A V Kimmel

  • Atom-resolved imaging of ordered defect superstructures at individual grain boundaries

    Zhongchang Wang;Mitsuhiro Saito;Keith P. McKenna;Keith P. McKenna;Lin Gu

  • Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory

    D. Muñoz Ramo;J. L. Gavartin;A. L. Shluger;G. Bersuker

  • Recent trends in surface characterization and chemistry with high-resolution scanning force methods.

    Clemens Barth;Adam S. Foster;Adam S. Foster;Claude R. Henry;Alexander L. Shluger;Alexander L. Shluger

  • Atomically resolved edges and kinks of NaCl islands on Cu(111): Experiment and theory.

    R. Bennewitz;A. S. Foster;L. N. Kantorovich;M. Bammerlin

  • Theoretical study of the stabilization of cubic-phase ZrO2 by impurities.

    E. V. Stefanovich;E. V. Stefanovich;A. L. Shluger;A. L. Shluger;C. R. A. Catlow

  • The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

    Keith McKenna;Alexander Shluger

  • Modification of the INDO Calculation Scheme and Parametrization for Ionic Crystals

    E. Stefanovich;E. Shidlovskaya;A. Shluger;M. Zakharov

  • Small polarons in real crystals: concepts and problems

    A L Shluger;A M Stoneham

  • Electron Localization and a Confined Electron Gas in Nanoporous Inorganic Electrides

    Peter V. Sushko;Alexander L. Shluger;Katsuro Hayashi;Masahiro Hirano

  • The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

    J. L. Gavartin;A. L. Shluger;Adam S. Foster;G. I. Bersuker

  • Spectroscopy of low-coordinated surface sites: Theoretical study of MgO

    Alexander L. Shluger;Peter V. Sushko;Peter V. Sushko;Lev N. Kantorovich

  • Mechanism of Interstitial Oxygen Diffusion in Hafnia

    Adam S. Foster;A. L. Shluger;Risto M. Nieminen

Frequent Co-Authors

Peter V. Sushko
Peter V. Sushko Pacific Northwest National Laboratory
Adam S. Foster
Adam S. Foster Aalto University
Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Anthony J. Kenyon
Anthony J. Kenyon University College London
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Michel Bosman
Michel Bosman National University of Singapore
Katsuro Hayashi
Katsuro Hayashi Kyushu University
C. R. A. Catlow
C. R. A. Catlow University College London
Risto M. Nieminen
Risto M. Nieminen Aalto University

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