2026 Alexander L. Shluger: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	76	3255	3142	136	126	493	22568

Alexander L. Shluger publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alexander L. Shluger sits on this spectrum.

50 publications 1,163+

This scientist: 493 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alexander L. Shluger D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alexander L. Shluger sits on this spectrum.

40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2011 - Fellow of American Physical Society (APS) Citation For contributions to the theory of local excited states and atomic forces at insulating surfaces

Overview

Alexander L. Shluger is affiliated with University College London in the United Kingdom. Their research primarily focuses on materials science and engineering, with significant contributions to materials chemistry, electrical and electronic engineering, and related subfields.

Their publications cover several core topics including semiconductor materials and devices, microstructure and mechanical properties, electronic and structural properties of oxides, advanced photocatalysis techniques, advanced memory and neural computing, 2D materials and applications, and ferroelectric and negative capacitance devices.

Frequent publication venues for Shluger's work include Physical Review B, The Journal of Physical Chemistry C, Physical Review Materials, arXiv (Cornell University), and ECS Meeting Abstracts.

The scientist has collaborated frequently with a range of co-authors including Jack Strand, Vasileios Fotopoulos, Luca Larcher, David Mora-Fonz, and Thomas R. Durrant.

Some recent papers authored or co-authored by Shluger are:

Roadmap on multiscale materials modeling (2020), published in Modelling and Simulation in Materials Science and Engineering
Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation (2022), published in Journal of Applied Physics
Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals (2020), published in Acta Materialia
Effect of electric field on defect generation and migration in HfO2 (2020), published in Physical Review B
Energies and structures of Cu/Nb and Cu/W interfaces from density functional theory and semi-empirical calculations (2022), published in Materialia

Alexander L. Shluger has been recognized as a Fellow of the American Physical Society in 2011. The citation for this award mentioned contributions to the theory of local excited states and atomic forces at insulating surfaces.

Best Publications

Vacancy and interstitial defects in hafnia

Adam S. Foster;F. Lopez Gejo;Alexander L. Shluger;Risto M. Nieminen

778
Citations
Recommended Methods to Study Resistive Switching Devices

Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

641
Citations
Theories of scanning probe microscopes at the atomic scale

Werner A. Hofer;Adam S. Foster;Alexander L. Shluger

640
Citations
Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

538
Citations
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker

430
Citations
Structure and electrical levels of point defects in monoclinic zirconia

Adam S. Foster;V. B. Sulimov;F. Lopez Gejo;A. L. Shluger

420
Citations
Relative energies of surface and defect states: ab initio calculations for the MgO (001) surface

Peter V. Sushko;Peter V. Sushko;Alexander L. Shluger;C.Richard A. Catlow

397
Citations
Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker

334
Citations
Crystallographic phase transition and high-Tc superconductivity in LaFeAsO:F

T Nomura;S W Kim;Y Kamihara;M Hirano

308
Citations
Trapping, self-trapping and the polaron family

A M Stoneham;J Gavartin;A L Shluger;A V Kimmel

292
Citations
Atom-resolved imaging of ordered defect superstructures at individual grain boundaries

Zhongchang Wang;Mitsuhiro Saito;Keith P. McKenna;Keith P. McKenna;Lin Gu

274
Citations
Spectroscopic properties of oxygen vacancies in monoclinic Hf O 2 calculated with periodic and embedded cluster density functional theory

D. Muñoz Ramo;J. L. Gavartin;A. L. Shluger;G. Bersuker

270
Citations
Recent trends in surface characterization and chemistry with high-resolution scanning force methods.

Clemens Barth;Adam S. Foster;Adam S. Foster;Claude R. Henry;Alexander L. Shluger;Alexander L. Shluger

266
Citations
Atomically resolved edges and kinks of NaCl islands on Cu(111): Experiment and theory.

R. Bennewitz;A. S. Foster;L. N. Kantorovich;M. Bammerlin

262
Citations
Theoretical study of the stabilization of cubic-phase ZrO2 by impurities.

E. V. Stefanovich;E. V. Stefanovich;A. L. Shluger;A. L. Shluger;C. R. A. Catlow

260
Citations
The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

Keith McKenna;Alexander Shluger

243
Citations
Modification of the INDO Calculation Scheme and Parametrization for Ionic Crystals

E. Stefanovich;E. Shidlovskaya;A. Shluger;M. Zakharov

231
Citations
Small polarons in real crystals: concepts and problems

A L Shluger;A M Stoneham

226
Citations
Electron Localization and a Confined Electron Gas in Nanoporous Inorganic Electrides

Peter V. Sushko;Alexander L. Shluger;Katsuro Hayashi;Masahiro Hirano

224
Citations
The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

J. L. Gavartin;A. L. Shluger;Adam S. Foster;G. I. Bersuker

214
Citations
Spectroscopy of low-coordinated surface sites: Theoretical study of MgO

Alexander L. Shluger;Peter V. Sushko;Peter V. Sushko;Lev N. Kantorovich

211
Citations
Mechanism of Interstitial Oxygen Diffusion in Hafnia

Adam S. Foster;A. L. Shluger;Risto M. Nieminen

191
Citations