2011 - Fellow of American Physical Society (APS) Citation For contributions to the theory of local excited states and atomic forces at insulating surfaces
His primary areas of investigation include Atomic physics, Electronic structure, Electron, Condensed matter physics and Chemical physics. His research integrates issues of Amorphous solid, Vacancy defect and Density functional theory in his study of Atomic physics. The various areas that he examines in his Electronic structure study include Thin film, X-ray photoelectron spectroscopy, Crystallographic defect and Thermodynamics.
His biological study spans a wide range of topics, including Ab initio quantum chemistry methods, Charge, Ionization, Molecular physics and Hafnium. The concepts of his Condensed matter physics study are interwoven with issues in Polaron, Grain boundary and Leakage. His Chemical physics research is multidisciplinary, relying on both Atom, Ionic bonding, Oxide and Ab initio.
Alexander L. Shluger spends much of his time researching Atomic physics, Chemical physics, Density functional theory, Electron and Molecular physics. His Atomic physics research integrates issues from Electronic structure, Exciton, Excitation and Band gap. His research in Electronic structure focuses on subjects like Ab initio quantum chemistry methods, which are connected to Ab initio.
Alexander L. Shluger has researched Chemical physics in several fields, including Oxide, Computational chemistry, Molecular dynamics, Molecule and Ion. His study in Density functional theory is interdisciplinary in nature, drawing from both Thin film, Atom, Oxygen and Vacancy defect. He combines subjects such as Amorphous solid and Condensed matter physics with his study of Electron.
Alexander L. Shluger mainly focuses on Density functional theory, Amorphous solid, Chemical physics, Electron and Oxide. His Density functional theory research incorporates elements of Molecular physics, Charge, Atomic physics, Vacancy defect and Band gap. He has included themes like Bipolaron, Polaron, Thin film, Nanotechnology and Semiconductor in his Amorphous solid study.
His Chemical physics study combines topics in areas such as Hydrogen, Fermi level, Molecular dynamics, Molecule and Dielectric. His work deals with themes such as Electronic structure, Condensed matter physics, Time-dependent gate oxide breakdown, Dielectric strength and Ion, which intersect with Electron. His Oxide study combines topics from a wide range of disciplines, such as Surface finish and Amorphous silicon.
His scientific interests lie mostly in Amorphous solid, Electron, Chemical physics, Density functional theory and Oxide. He combines subjects such as Nanotechnology, Ab initio quantum chemistry methods, Crystallographic defect, Oxygen and Dielectric with his study of Amorphous solid. Alexander L. Shluger has included themes like Ion and Condensed matter physics in his Electron study.
His Density functional theory study incorporates themes from Band gap, Vacancy defect, Semiconductor and Binding energy. His Oxide research is multidisciplinary, incorporating elements of Annealing, Amorphous silicon and Atomic physics. In his study, Amorphous metal is inextricably linked to Electronic structure, which falls within the broad field of Polaron.
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Vacancy and interstitial defects in hafnia
Adam S. Foster;F. Lopez Gejo;Alexander L. Shluger;Risto M. Nieminen.
Physical Review B (2002)
Theories of scanning probe microscopes at the atomic scale
Werner A. Hofer;Adam S. Foster;Alexander L. Shluger.
Reviews of Modern Physics (2003)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)
Structure and electrical levels of point defects in monoclinic zirconia
Adam S. Foster;V. B. Sulimov;F. Lopez Gejo;A. L. Shluger.
Physical Review B (2001)
Relative energies of surface and defect states: ab initio calculations for the MgO (001) surface
Peter V. Sushko;Peter V. Sushko;Alexander L. Shluger;C.Richard A. Catlow.
Surface Science (2000)
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
J. L. Gavartin;D. Muñoz Ramo;A. L. Shluger;G. Bersuker.
Applied Physics Letters (2006)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks
J. L. Gavartin;D. Munoz Ramo;A. L. Shluger;G. Bersuker.
arXiv: Materials Science (2006)
Crystallographic phase transition and high-Tc superconductivity in LaFeAsO:F
T Nomura;S W Kim;Y Kamihara;M Hirano.
Superconductor Science and Technology (2008)
Atomically resolved edges and kinks of NaCl islands on Cu(111): Experiment and theory.
R. Bennewitz;A. S. Foster;L. N. Kantorovich;M. Bammerlin.
Physical Review B (2000)
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