The scientist’s investigation covers issues in Electrical engineering, Optoelectronics, Resistive random-access memory, Electronic engineering and Voltage. His work in Electrical engineering addresses issues such as Reliability, which are connected to fields such as EEPROM. His Optoelectronics research is multidisciplinary, incorporating perspectives in Joule heating, Glazing and MOSFET.
His Resistive random-access memory research integrates issues from Chemical physics, Hafnium compounds, Hafnium oxide, Dielectric and Nanotechnology. His Electronic engineering research includes elements of EPROM, Non-volatile memory, Photovoltaic system, Flash memory and Renewable energy. His work deals with themes such as Inorganic chemistry, Radio frequency and CMOS, which intersect with Voltage.
Luca Larcher mostly deals with Optoelectronics, Electronic engineering, Electrical engineering, Resistive random-access memory and Dielectric. His Optoelectronics research focuses on MOSFET and how it connects with Gate dielectric. His Electronic engineering study incorporates themes from Electronic circuit, SILC, Reset, Flash memory and Reliability.
His study looks at the relationship between Electrical engineering and topics such as Energy harvesting, which overlap with Wireless sensor network, Automotive engineering, Mechanical engineering, Vibration and Microelectromechanical systems. His Resistive random-access memory research incorporates elements of Noise, Resistive touchscreen and Resistive switching. He has researched Dielectric in several fields, including Condensed matter physics and Logic gate.
Optoelectronics, Resistive random-access memory, Reliability, Electronic engineering and Loudspeaker are his primary areas of study. His study in the field of Nanowire and Non-volatile memory is also linked to topics like Fabrication and Stack. His Resistive random-access memory study is focused on Electrical engineering in general.
Luca Larcher focuses mostly in the field of Reliability, narrowing it down to topics relating to Dielectric and, in certain cases, Thermal runaway and Magnetoresistive random-access memory. Luca Larcher combines subjects such as Electronic circuit and Hafnium compounds with his study of Electronic engineering. His Loudspeaker study combines topics from a wide range of disciplines, such as Predistortion and Linearization.
His primary areas of investigation include Optoelectronics, Resistive random-access memory, Electrical engineering, Material properties and Electronic engineering. His Optoelectronics study integrates concerns from other disciplines, such as Thin film and Joule heating. His research investigates the link between Resistive random-access memory and topics such as Resistive touchscreen that cross with problems in Characterization, Molecular physics and Voltage.
His research in dBm and Amplifier are components of Electrical engineering. His study in the field of Digital switching also crosses realms of Multilayer perceptron neural network. His research in Dielectric focuses on subjects like Nanoscopic scale, which are connected to Noise.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch.
Journal of Applied Physics (2011)
Modeling and Optimization of a Solar Energy Harvester System for Self-Powered Wireless Sensor Networks
D. Dondi;A. Bertacchini;D. Brunelli;L. Larcher.
IEEE Transactions on Industrial Electronics (2008)
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani.
Advanced Functional Materials (2016)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
L. Vandelli;A. Padovani;L. Larcher;R. G. Southwick.
IEEE Transactions on Electron Devices (2011)
Analysis of reliability and power efficiency in cascode class-E PAs
A. Mazzanti;L. Larcher;R. Brama;F. Svelto.
radio frequency integrated circuits symposium (2006)
Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui.
Advanced Functional Materials (2017)
Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells
L. Larcher;G. Verzellesi;P. Pavan;E. Lusky.
IEEE Transactions on Electron Devices (2002)
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum.
international electron devices meeting (2010)
Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model
L. Larcher.
IEEE Transactions on Electron Devices (2003)
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