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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
10885
World Ranking
2293
National Ranking
55

Overview

Luca Larcher is affiliated with the University of Modena and Reggio Emilia in Italy and has contributed extensively to the field of engineering, with a particular focus on electrical and electronic engineering. Their body of work encompasses topics such as semiconductor materials and devices, advanced memory and neural computing, and ferroelectric and negative capacitance devices.

Their research interests also cover advancements in semiconductor devices and circuit design, phase-change materials and chalcogenides, quantum and electron transport phenomena, and integrated circuits and semiconductor failure analysis.

Among the frequent coauthors collaborating with Luca Larcher are Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, and Milan Pešić.

Larcher has published in multiple venues with repeated contributions to the following:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Journal of Applied Physics
  • Nature Reviews Materials
  • 2022 IEEE International Reliability Physics Symposium (IRPS)

Recent research articles include the following publications:

  • "Standards for the Characterization of Endurance in Resistive Switching Devices," 2021, ACS Nano
  • "Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation," 2022, Journal of Applied Physics
  • "Effect of electric field on defect generation and migration in HfO2," 2020, Physical Review B
  • "Electron trapping in ferroelectric HfO2," 2021, Physical Review Materials
  • "Dielectric breakdown of oxide films in electronic devices," 2024, Nature Reviews Materials

Best Publications

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Metal oxide resistive memory switching mechanism based on conductive filament properties

    G. Bersuker;D. C. Gilmer;D. Veksler;P. Kirsch

  • Modeling and Optimization of a Solar Energy Harvester System for Self-Powered Wireless Sensor Networks

    D. Dondi;A. Bertacchini;D. Brunelli;L. Larcher

  • A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

    L. Vandelli;A. Padovani;L. Larcher;R. G. Southwick

  • Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan;Yanfeng Ji;Na Xiao;Fei Hui

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Analysis of reliability and power efficiency in cascode class-E PAs

    A. Mazzanti;L. Larcher;R. Brama;F. Svelto

  • Microscopic Modeling of HfO x RRAM Operations: From Forming to Switching

    Andrea Padovani;Luca Larcher;Onofrio Pirrotta;Luca Vandelli

  • Grain boundary-driven leakage path formation in HfO2 dielectrics

    G. Bersuker;J. Yum;L. Vandelli;A. Padovani

  • Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

    G. Bersuker;D. C. Gilmer;D. Veksler;J. Yum

  • Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

    L. Larcher;G. Verzellesi;P. Pavan;E. Lusky

  • Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model

    L. Larcher

  • A Complete Statistical Investigation of RTN in HfO 2 -Based RRAM in High Resistive State

    Francesco Maria Puglisi;Luca Larcher;Andrea Padovani;Paolo Pavan

  • A solar energy harvesting circuit for low power applications

    D. Dondi;A. Bertacchini;L. Larcher;P. Pavan

  • A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling

    A. Padovani;D. Z. Gao;A. L. Shluger;A. L. Shluger;L. Larcher

  • Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Yanfeng Ji;Chengbin Pan;Meiyun Zhang;Shibing Long

  • Radiation effects on floating-gate memory cells

    G. Cellere;P. Pellati;A. Chimenton;J. Wyss

  • Carbon-doped GeTe: A promising material for Phase-Change Memories

    G. Betti Beneventi;L. Perniola;V. Sousa;E. Gourvest;E. Gourvest

  • Experimental and theoretical study of electrode effects in HfO 2 based RRAM

    C. Cagli;J. Buckley;V. Jousseaume;T. Cabout

Frequent Co-Authors

Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Paolo Lugli
Paolo Lugli Free University of Bozen-Bolzano
Alexander L. Shluger
Alexander L. Shluger University College London
Mario Lanza
Mario Lanza National University of Singapore
Francesco Svelto
Francesco Svelto University of Pavia
B. De Salvo
B. De Salvo Meta for Business
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology

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