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Alessandro Paccagnella

Alessandro Paccagnella

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
9454
World Ranking
2947
National Ranking
76

Overview

Alessandro Paccagnella is affiliated with the University of Padua in Italy and specializes in the field of Engineering. Their research primarily focuses on Electrical and Electronic Engineering, with significant contributions in Biomedical Engineering, Molecular Biology, Nuclear and High Energy Physics, and Astronomy and Astrophysics.

Their work covers a variety of topics, notably Radiation Effects in Electronics, Semiconductor materials and devices, and Advancements in Semiconductor Devices and Circuit Design. Additional research areas include Advanced biosensing and bioanalysis techniques, Biosensors and Analytical Detection, Integrated Circuits and Semiconductor Failure Analysis, and Advanced Sensor and Energy Harvesting Materials.

Among recent publications, some key papers include:

  • Fermi Large Area Telescope Performance after 10 Years of Operation, 2021, The Astrophysical Journal Supplement Series
  • Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses, 2020, IEEE Transactions on Nuclear Science
  • A plug, print & play inkjet printing and impedance-based biosensing technology operating through a smartphone for clinical diagnostics, 2021, Biosensors and Bioelectronics
  • TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses, 2021, IEEE Transactions on Nuclear Science
  • Thermal Neutron-Induced SEUs in the LHC Accelerator Environment, 2020, IEEE Transactions on Nuclear Science

Frequent coauthors in their work include:

  • Stefano Bonaldo
  • Simone Gerardin
  • Marta Bagatin
  • S. Mattiazzo
  • Lara Franchin

The primary venues for Alessandro Paccagnella's publications are:

  • IEEE Transactions on Nuclear Science
  • IEEE Sensors Journal
  • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
  • Biosensors and Bioelectronics
  • Electronics

Best Publications

  • Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip

    W. Snoeys;F. Faccio;M. Burns;M. Campbell

  • SVX', the new CDF silicon vertex detector

    P. Azzi;N. Bacchetta;B.A. Barnett;M. Bailey

  • Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

    F. Faccio;S. Michelis;D. Cornale;A. Paccagnella

  • Present and Future Non-Volatile Memories for Space

    Simone Gerardin;Alessandro Paccagnella

  • Ionizing radiation induced leakage current on ultra-thin gate oxides

    A. Scarpa;A. Paccagnella;F. Montera;G. Ghibaudo

  • Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    M. Ceschia;A. Paccagnella;A. Cester;A. Scarpa

  • Errata to “Identification and Classification of Single-Event Upsets in the Configuration Memory of SRAM-Based FPGAs”

    M. Ceschia;M. Violante;M. SonzaReorda;A. Paccagnella

  • Radiation Effects in Flash Memories

    S. Gerardin;M. Bagatin;A. Paccagnella;K. Grurmann

  • Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout

    A Giraldo;A Paccagnella;A Minzoni

  • Evaluating the effects of SEUs affecting the configuration memory of an SRAM-based FPGA

    M. Bellato;P. Bernardi;D. Bortolato;A. Candelori

  • Radiation effects on floating-gate memory cells

    G. Cellere;P. Pellati;A. Chimenton;J. Wyss

  • Influence of LDD Spacers and H + Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

    Federico Faccio;Giulio Borghello;Edoardo Lerario;Daniel M. Fleetwood

  • A New Hardware/Software Platform and a New 1/E Neutron Source for Soft Error Studies: Testing FPGAs at the ISIS Facility

    M. Violante;L. Sterpone;A. Manuzzato;S. Gerardin

  • Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation

    M. Ceschia;A. Paccagnella;S. Sandrin;G. Ghidini

  • Impact ionization and light emission in AlGaAs/GaAs HEMT's

    E. Zanoni;M. Manfredi;S. Bigliardi;A. Paccagnella

  • Transient conductive path induced by a Single ion in 10 nm SiO/sub 2/ Layers

    G. Cellere;A. Paccagnella;A. Visconti;M. Bonanomi

  • A model for TID effects on floating Gate Memory cells

    G. Cellere;A. Paccagnella;A. Visconti;M. Bonanomi

  • Heavy ion irradiation of thin gate oxides

    M. Ceschia;A. Paccagnella;M. Turrini;A. Candelori

  • Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs

    A. Callegari;D. K. Sadana;D. A. Buchanan;A. Paccagnella

  • A model of radiation induced leakage current (RILC) in ultra-thin gate oxides

    L. Larcher;A. Paccagnella;M. Ceschia;G. Ghidini

  • Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation

    G. Cellere;A. Paccagnella;L. Larcher;A. Chimenton

Frequent Co-Authors

Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Luca Larcher
Luca Larcher University of Modena and Reggio Emilia
Massimo Violante
Massimo Violante Polytechnic University of Turin

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