Min Hyuk Park

Overview

Best Publications

• Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

  Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  1166
  Citations

• Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Woongkyu Lee

  816
  Citations

• The fundamentals and applications of ferroelectric HfO2

  Unknown

  671
  Citations

• Review and perspective on ferroelectric HfO2-based thin films for memory applications

  Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  529
  Citations

• The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Taehwan Moon

  409
  Citations

• Next generation ferroelectric materials for semiconductor process integration and their applications

  T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  386
  Citations

• A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

  M. H. Park;T. Schenk;C. M. Fancher;E. D. Grimley

  378
  Citations

• Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

  Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Tony Schenk

  373
  Citations

• Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Taehwan Moon

  356
  Citations

• Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.

  Uwe Schroeder;Claudia Richter;Min Hyuk Park;Tony Schenk

  342
  Citations

• Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

  Anna G. Chernikova;Maxim G. Kozodaev;Dmitry V. Negrov;Evgeny V. Korostylev

  314
  Citations

• Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

  Thomas Mikolajick;Stefan Slesazeck;Min Hyuk Park;Uwe Schroeder

  308
  Citations

• Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

  Han Joon Kim;Min Hyuk Park;Yu Jin Kim;Young Hwan Lee

  296
  Citations

• A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement

  Han Joon Kim;Min Hyuk Park;Yu Jin Kim;Young Hwan Lee

  273
  Citations

• Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

  Unknown

  242
  Citations

• Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

  K. D. Kim;M. H. Park;H. J. Kim;Y. J. Kim

  238
  Citations

• Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Young Hwan Lee

  233
  Citations

• Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

  Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  227
  Citations

• Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

  Jun Jiang;Zi Long Bai;Zhi Hui Chen;Long He

  223
  Citations

• Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Taehwan Moon

  217
  Citations

• Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Woongkyu Lee

  200
  Citations

• Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Woongkyu Lee

  164
  Citations