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Materials Science
UK
2022

D-Index & Metrics

Materials Science

D-Index
118
Citations
89142
World Ranking
514
National Ranking
21

Physics

D-Index
124
Citations
94214
World Ranking
681
National Ranking
60

James F. Scott publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where James F. Scott sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 693 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

James F. Scott D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where James F. Scott sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 118 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in United Kingdom Leader Award
  • 2008 - MRS Medal, Materials Research Society For his fundamental contributions to the materials science of oxides underlying current and future electronic devices

Overview

James F. Scott was affiliated with the University of St Andrews in the United Kingdom. Their research primarily focused on materials science with a significant emphasis on ferroelectric and piezoelectric materials, multiferroics, and magnetic and transport properties of perovskites and related materials. Their work extended into topics related to acoustic wave resonator technologies, advanced condensed matter physics, electronic and structural properties of oxides, and microwave dielectric ceramics synthesis.

Over the course of their career, James F. Scott published extensively in the field of materials science, including subfields such as materials chemistry, electronic, optical and magnetic materials, atomic and molecular physics and optics, biomedical engineering, and condensed matter physics.

Frequent coauthors that collaborated with James F. Scott included Ram S. Katiyar, Shalini Kumari, K. K. Mishra, Peter Woias, and Matthias Wuttig. These collaborations appeared across various publications and research papers during their career.

James F. Scott's work was published in several journals and venues, with multiple contributions in arXiv (Cornell University), Advanced Electronic Materials, Physical Review B, Nature Materials, and Applied Physics Letters.

Their notable papers include:

  • "Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers," 2020, Nature Materials
  • "Non-Ohmic Variable-Range Hopping and Resistive Switching in SrTiO3 Domain Walls," 2020, Physical Review Letters
  • "Nanodomain patterns in ultra-tetragonal lead titanate (PbTiO3)," 2020, Applied Physics Letters
  • "Lead palladium titanate: A room temperature nanoscale multiferroic thin film," 2020, Scientific Reports
  • "Room-temperature large magnetoelectricity in a transition metal doped ferroelectric perovskite," 2021, Physical Review B

James F. Scott was awarded the MRS Medal by the Materials Research Society in 2008 for their fundamental contributions to the materials science of oxides underlying current and future electronic devices.

Best Publications

  • Multiferroic and magnetoelectric materials

    W. Eerenstein;N. D. Mathur;J. F. Scott

  • Physics and Applications of Bismuth Ferrite

    Gustau Catalan;James F. Scott

  • Applications of Modern Ferroelectrics

    J. F. Scott

  • Fatigue-free ferroelectric capacitors with platinum electrodes

    C. A-Paz de Araujo;J. D. Cuchiaro;L. D. McMillan;M. C. Scott

  • Physics of thin-film ferroelectric oxides

    Matthew Dawber;K. M. Rabe;J. F. Scott

  • Above-bandgap voltages from ferroelectric photovoltaic devices

    S. Y. Yang;J. Seidel;J. Seidel;S. J. Byrnes;S. J. Byrnes;P. Shafer

  • Giant Electrocaloric Effect in Thin-Film PbZr0.95Ti0.05O3

    A. S. Mischenko;A. S. Mischenko;Q. Zhang;Q. Zhang;J. F. Scott;J. F. Scott;R. W. Whatmore;R. W. Whatmore

  • Data storage. Multiferroic memories.

    J. F. Scott

  • The Physics of Ferroelectric Memories

    Orlando Auciello;James F. Scott;Ramamoorthy Ramesh

  • Conduction at domain walls in oxide multiferroics

    J. Seidel;L. W. Martin;L. W. Martin;Q. He;Q. Zhan

  • A novel form of tissue-specific RNA processing produces apolipoprotein-B48 in intestine.

    Lyn M. Powell;Simon C. Wallis;Richard J. Pease;Yvonne H. Edwards

  • Domain wall nanoelectronics

    Gustau Catalán;J. Seidel;J. Seidel;J. Seidel;Ramamoorthy Ramesh;Ramamoorthy Ramesh;James F. Scott

  • Emerging memories: resistive switching mechanisms and current status.

    Doo Seok Jeong;Reji Thomas;R S Katiyar;J F Scott

  • Giant sharp and persistent converse magnetoelectric effects in multiferroic epitaxial heterostructures.

    W. Eerenstein;M. Wiora;J. L. Prieto;J. F. Scott

  • Observation of polar vortices in oxide superlattices

    A. K. Yadav;A. K. Yadav;C. T. Nelson;C. T. Nelson;S. L. Hsu;S. L. Hsu;Z. Hong

  • cDNA sequence and chromosomal localization of human platelet-derived growth factor A-chain and its expression in tumour cell lines

    Christer Betsholtz;Ann Johnsson;Carl-Henrik Heldin;Bengt Westermark

  • Soft-mode spectroscopy: Experimental studies of structural phase transitions

    J. F. Scott

  • Ferroelectrics go bananas

    J F Scott

  • Ferroelectric Memories

    Unknown

  • Soft Phonon Modes and the 110°K Phase Transition in SrTiO3

    P. A. Fleury;J. F. Scott;J. M. Worlock

  • Observation of Polar Vortices in Oxide Superlattices

    R. Ramesh

Frequent Co-Authors

Ram S. Katiyar
Ram S. Katiyar University of Puerto Rico
Gustau Catalan
Gustau Catalan Institut Català de Nanociència i Nanotecnologia
J. M. Gregg
J. M. Gregg Queen's University Belfast
Simon A. T. Redfern
Simon A. T. Redfern Nanyang Technological University
Neil D. Mathur
Neil D. Mathur University of Cambridge
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Ekhard K. H. Salje
Ekhard K. H. Salje University of Cambridge
Hyun M. Jang
Hyun M. Jang Seoul National University
Michael A. Carpenter
Michael A. Carpenter University of Cambridge
Alexei Gruverman
Alexei Gruverman University of Nebraska–Lincoln

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