World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
60
Citations
17358
World Ranking
6938
National Ranking
371

Hiroshi Funakubo publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Hiroshi Funakubo sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 1,031 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Hiroshi Funakubo D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Hiroshi Funakubo sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Hiroshi Funakubo is affiliated with the Tokyo Institute of Technology in Japan and conducts research primarily in the fields of Engineering and Materials Science. Their work spans a significant number of publications, with major concentrations in Materials Chemistry and Electrical and Electronic Engineering as notable subfields of study.

The research topics covered by Funakubo's work include a focus on Ferroelectric and Piezoelectric Materials, Acoustic Wave Resonator Technologies, and Ferroelectric and Negative Capacitance Devices. Other relevant topics in their portfolio are Semiconductor Materials and Devices, Multiferroics and Related Materials, Force Microscopy Techniques and Applications, and MXene and MAX Phase Materials.

Frequent co-authors in Funakubo's research include Takao Shimizu, K. Okamoto, Takahisa Shiraishi, Sergei V. Kalinin, and Takanori Mimura, reflecting collaborative efforts across various studies.

Funakubo has published regularly in several academic venues. The most frequent publication outlets include:

  • Japanese Journal of Applied Physics
  • Journal of the Ceramic Society of Japan
  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics

Among the recent papers authored under Funakubo's work are:

  • "Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films" (2020, Journal of Applied Physics)
  • "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices" (2023, APL Materials)
  • "Experimental discovery of structure-property relationships in ferroelectric materials via active learning" (2022, Nature Machine Intelligence)
  • "Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors" (2021, Advanced Functional Materials)
  • "Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm−2 around 10 nm in thickness" (2021, Applied Physics Express)

Best Publications

  • Dimensionality-controlled insulator-metal transition and correlated metallic state in 5d transition metal oxides Sr n+1Ir nO3n+1 (n=1, 2, and infinity)

    S. J. Moon;H. Jin;Kyung Wan Kim;W. S. Choi

  • Stabilizing the ferroelectric phase in doped hafnium oxide

    M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu

  • Large remanent polarization of (Bi, Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

    Takashi Kojima;Tomohiro Sakai;Takayuki Watanabe;Hiroshi Funakubo

  • Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films

    Hiroshi Uchida;Risako Ueno;Hiroshi Funakubo;Seiichiro Koda

  • Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric

    Lu You;Lu You;Yang Zhang;Shuang Zhou;Shuang Zhou;Apoorva Chaturvedi

  • Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

    Takahisa Shiraishi;Takahisa Shiraishi;Kiliha Katayama;Tatsuhiko Yokouchi;Takao Shimizu

  • Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition

    Takayuki Watanabe;Hiroshi Funakubo;Minoru Osada;Yuji Noguchi

  • High-κ Dielectric Nanofilms Fabricated from Titania Nanosheets

    Minoru Osada;Yasuo Ebina;Hiroshi Funakubo;Shintaro Yokoyama

  • The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    Takao Shimizu;Kiliha Katayama;Takanori Kiguchi;Akihiro Akama

  • Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

    Shinnosuke Yasuoka;Takao Shimizu;Takao Shimizu;Akinori Tateyama;Masato Uehara

  • Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

    Hiroshi Uchida;Hiroki Yoshikawa;Isao Okada;Hirofumi Matsuda

  • Cation Distribution and Structural Instability in Bi4-xLaxTi3O12

    Minoru Osada;Masaru Tada;Masato Kakihana;Takayuki Watanabe

  • Robust high-κ response in molecularly thin perovskite nanosheets.

    Minoru Osada;Kosho Akatsuka;Yasuo Ebina;Hiroshi Funakubo

  • Engineered interfaces of artificial perovskite oxide superlattices via nanosheet deposition process.

    Bao Wen Li;Minoru Osada;Tadashi C. Ozawa;Yasuo Ebina

  • Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

    S. K. Singh;Y. K. Kim;H. Funakubo;H. Ishiwara

  • Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    Takao Shimizu;Kiliha Katayama;Takanori Kiguchi;Akihiro Akama

  • Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio

    Shintaro Yokoyama;Yoshihisa Honda;Hitoshi Morioka;Shoji Okamoto

  • Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching

    Takayuki Watanabe;Hiroshi Funakubo;Keisuke Saito;Toshimasa Suzuki

  • Highly-conducting indiumtin-oxide transparent films fabricated by spray CVD using ethanol solution of indium (III) chloride and tin (II) chloride

    Yutaka Sawada;Chikako Kobayashi;Shigeyuki Seki;Hiroshi Funakubo

  • Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique

    Takayuki Watanabe;Takashi Kojima;Tomohiro Sakai;Hiroshi Funakubo

Frequent Co-Authors

Takao Shimizu
Takao Shimizu University of Tokyo
Takayuki Watanabe
Takayuki Watanabe Kyushu University
Osami Sakata
Osami Sakata Japan Synchrotron Radiation Research Institute
Minoru Kurosawa
Minoru Kurosawa Tokyo Institute of Technology
Nobuyasu Mizutani
Nobuyasu Mizutani Tokyo Institute of Technology
Minoru Osada
Minoru Osada Nagoya University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Nava Setter
Nava Setter École Polytechnique Fédérale de Lausanne
Stephen Jesse
Stephen Jesse Oak Ridge National Laboratory
Sergei V. Kalinin
Sergei V. Kalinin University of Tennessee at Knoxville

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