World's Best Scientists 2026 revealed!
Cheol Seong Hwang

Cheol Seong Hwang

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Materials Science
Korea
2022

D-Index & Metrics

Materials Science

D-Index
105
Citations
49762
World Ranking
835
National Ranking
22

Cheol Seong Hwang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Cheol Seong Hwang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 821 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Cheol Seong Hwang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Cheol Seong Hwang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 105 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in Korea Leader Award

Overview

Cheol Seong Hwang is affiliated with Seoul National University in South Korea and has an extensive publication record in the fields of engineering and materials science. Their research focus covers areas including electrical and electronic engineering, materials chemistry, and related subfields.

The scientist's work spans multiple main topics, reflecting a broad engagement with both fundamental and applied aspects of electronic materials and devices. Key topics in their research include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • MXene and MAX Phase Materials
  • Neuroscience and Neural Engineering

Cheol Seong Hwang has contributed to various publication venues with significant frequency. The most frequent journals where their work appears include:

  • Journal of Materials Chemistry C
  • Advanced Electronic Materials
  • Advanced Materials
  • ACS Applied Materials & Interfaces
  • ACS Applied Electronic Materials

Their coauthors indicate collaborations with several researchers, evidencing strong teamwork in their scientific community. Frequent coauthors include:

  • Yoon Ho Jang
  • Janguk Han
  • Jung-Hae Choi
  • Soo Hyung Lee
  • Hyeon Woo Park

Among the recent notable papers published by Cheol Seong Hwang are:

  • Resistive switching materials for information processing, 2020, Nature Reviews Materials
  • The fundamentals and applications of ferroelectric HfO2, 2022, Nature Reviews Materials
  • Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film, 2022, Nature Communications
  • Review of Semiconductor Flash Memory Devices for Material and Process Issues, 2022, Advanced Materials
  • Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers, 2020, Nature Materials

Best Publications

  • Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

    Deok-Hwang Kwon;Kyung Min Kim;Jae Hyuck Jang;Jong Myeong Jeon

  • Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

    B. J. Choi;Doo Seok Jeong;S. K. Kim;C. Rohde

  • Multifunctional wearable devices for diagnosis and therapy of movement disorders

    Donghee Son;Jongha Lee;Shutao Qiao;Roozbeh Ghaffari

  • Emerging memories: resistive switching mechanisms and current status.

    Doo Seok Jeong;Reji Thomas;R S Katiyar;J F Scott

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Resistive switching materials for information processing

    Zhongrui Wang;Huaqiang Wu;Geoffrey W. Burr;Cheol Seong Hwang

  • Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

    Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Woongkyu Lee

  • Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

    Kyung Min Kim;Doo Seok Jeong;Cheol Seong Hwang

  • The fundamentals and applications of ferroelectric HfO2

    Unknown

  • Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

    Kyung Min Kim;Byung Joon Choi;Yong Cheol Shin;Seol Choi

  • Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

    Jong Hoon Park;Jangwon Seo;Sangman Park;Seong Sik Shin

  • Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  • An artificial nociceptor based on a diffusive memristor.

    Jung Ho Yoon;Zhongrui Wang;Kyung Min Kim;Huaqiang Wu

  • A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors

    An Quan Jiang;Can Wang;Kui Juan Jin;Xiao Bing Liu

  • Identification of a determining parameter for resistive switching of TiO2 thin films

    Christina Rohde;Christina Rohde;Byung Joon Choi;Doo Seok Jeong;Seol Choi

  • High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

    Seong Keun Kim;Wan-Don Kim;Kyung-Min Kim;Cheol Seong Hwang

  • Memristors for Energy-Efficient New Computing Paradigms

    Doo Seok Jeong;Kyung Min Kim;Sungho Kim;Byung Joon Choi

  • 原子層蒸着で成長したTiO 2 薄膜の抵抗スイッチング機構

    B J Choi;D S Jeong;S K Kim;C Rohde

  • The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

    Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Taehwan Moon

  • A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

    Jun Yeong Seok;Jun Yeong Seok;Seul Ji Song;Jung Ho Yoon;Kyung Jean Yoon

  • Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

    Seong Keun Kim;Gyu-Jin Choi;Sang Young Lee;Minha Seo

Frequent Co-Authors

Hyeong Joon Kim
Hyeong Joon Kim Seoul National University
Min Hyuk Park
Min Hyuk Park Seoul National University
Seong Keun Kim
Seong Keun Kim Korea Institute of Science and Technology
Jong-Ho Lee
Jong-Ho Lee Soongsil University
Seungwu Han
Seungwu Han Seoul National University
Seong Keun Kim
Seong Keun Kim Seoul National University
Rainer Waser
Rainer Waser RWTH Aachen University
Jae Kyeong Jeong
Jae Kyeong Jeong Hanyang University
Moonyong Lee
Moonyong Lee Yeungnam University
Uwe Schroeder
Uwe Schroeder Namlab gGmbH

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