Cheol Seong Hwang

Research.com Recognitions

• 2022 - Research.com Materials Science in Korea Leader Award

Overview

Best Publications

• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

  Deok-Hwang Kwon;Kyung Min Kim;Jae Hyuck Jang;Jong Myeong Jeon

  2349
  Citations

• Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

  B. J. Choi;Doo Seok Jeong;S. K. Kim;C. Rohde

  1689
  Citations

• Multifunctional wearable devices for diagnosis and therapy of movement disorders

  Donghee Son;Jongha Lee;Shutao Qiao;Roozbeh Ghaffari

  1573
  Citations

• Emerging memories: resistive switching mechanisms and current status.

  Doo Seok Jeong;Reji Thomas;R S Katiyar;J F Scott

  1210
  Citations

• Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

  Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  1166
  Citations

• Resistive switching materials for information processing

  Zhongrui Wang;Huaqiang Wu;Geoffrey W. Burr;Cheol Seong Hwang

  1098
  Citations

• Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Woongkyu Lee

  816
  Citations

• Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

  Kyung Min Kim;Doo Seok Jeong;Cheol Seong Hwang

  746
  Citations

• The fundamentals and applications of ferroelectric HfO2

  Unknown

  671
  Citations

• Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

  Kyung Min Kim;Byung Joon Choi;Yong Cheol Shin;Seol Choi

  636
  Citations

• Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

  Jong Hoon Park;Jangwon Seo;Sangman Park;Seong Sik Shin

  587
  Citations

• Review and perspective on ferroelectric HfO2-based thin films for memory applications

  Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  529
  Citations

• An artificial nociceptor based on a diffusive memristor.

  Jung Ho Yoon;Zhongrui Wang;Kyung Min Kim;Huaqiang Wu

  494
  Citations

• A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors

  An Quan Jiang;Can Wang;Kui Juan Jin;Xiao Bing Liu

  483
  Citations

• Identification of a determining parameter for resistive switching of TiO2 thin films

  Christina Rohde;Christina Rohde;Byung Joon Choi;Doo Seok Jeong;Seol Choi

  481
  Citations

• High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

  Seong Keun Kim;Wan-Don Kim;Kyung-Min Kim;Cheol Seong Hwang

  437
  Citations

• Memristors for Energy-Efficient New Computing Paradigms

  Doo Seok Jeong;Kyung Min Kim;Sungho Kim;Byung Joon Choi

  423
  Citations

• 原子層蒸着で成長したTiO 2 薄膜の抵抗スイッチング機構

  B J Choi;D S Jeong;S K Kim;C Rohde

  421
  Citations

• The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

  Min Hyuk Park;Han Joon Kim;Yu Jin Kim;Taehwan Moon

  409
  Citations

• A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

  Jun Yeong Seok;Jun Yeong Seok;Seul Ji Song;Jung Ho Yoon;Kyung Jean Yoon

  405
  Citations

• Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

  Seong Keun Kim;Gyu-Jin Choi;Sang Young Lee;Minha Seo

  378
  Citations