Hangbing Lv mostly deals with Optoelectronics, Resistive random-access memory, Non-volatile memory, Graphene and Layer. His Optoelectronics research includes elements of Transmission electron microscopy, Nanotechnology, Joule heating and Modulation. His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Electrolyte, Protein filament, Computer data storage and Crossbar switch.
The study incorporates disciplines such as Resistive switching, Voltage, Integrated circuit, Thermal conduction and Electrical conductor in addition to Non-volatile memory. His Graphene study combines topics in areas such as Nanoscopic scale, Driving current, Material system and Defect engineering. His Layer research is multidisciplinary, incorporating elements of Analytical chemistry and X-ray photoelectron spectroscopy.
His main research concerns Optoelectronics, Resistive random-access memory, Voltage, Electronic engineering and Nanotechnology. His research on Optoelectronics focuses in particular on Non-volatile memory. He works mostly in the field of Resistive random-access memory, limiting it down to topics relating to Reset and, in certain cases, Weibull distribution.
His study on Nanotechnology is mostly dedicated to connecting different topics, such as Conductive filament. His Layer course of study focuses on Graphene and Nanopore. His Electrical conductor research incorporates themes from Programmable metallization cell and Protein filament.
The scientist’s investigation covers issues in Optoelectronics, Resistive random-access memory, Electronic engineering, Voltage and Non-volatile memory. His studies deal with areas such as Random access memory, Layer, Thermal stability, Gallium oxide and Resistive touchscreen as well as Optoelectronics. Hangbing Lv has researched Resistive random-access memory in several fields, including Crossbar switch, Barrier layer, Stability, Bit error rate and Power network design.
His research in Electronic engineering intersects with topics in Neuromorphic engineering, Transistor and Resistive switching. His Voltage research is multidisciplinary, relying on both Reset and Chip. His Non-volatile memory study integrates concerns from other disciplines, such as Electronic circuit, Logic gate and Capacitor.
Hangbing Lv mainly focuses on Optoelectronics, Thin film, Gallium oxide, Photodiode and Resistive random-access memory. His research integrates issues of Random access memory and Thermal stability in his study of Optoelectronics. Hangbing Lv interconnects Electrical conductor, Programmable metallization cell, Nanochemistry and Protein filament in the investigation of issues within Random access memory.
Hangbing Lv works mostly in the field of Thin film, limiting it down to concerns involving Analytical chemistry and, occasionally, Hafnium compounds, Ferroelectric capacitor and Capacitor. His study looks at the relationship between Gallium oxide and fields such as Photodetector, as well as how they intersect with chemical problems. In his study, which falls under the umbrella issue of Resistive random-access memory, Switching time is strongly linked to Vacancy defect.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
Qi Liu;Jun Sun;Hangbing Lv;Shibing Long.
Advanced Materials (2012)
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang.
ACS Nano (2010)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun;Qi Liu;Congfei Li;Shibing Long.
Advanced Functional Materials (2014)
Reproducible unipolar resistance switching in stoichiometric ZrO2 films
X. Wu;P. Zhou;J. Li;L. Y. Chen.
Applied Physics Letters (2007)
Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory
Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu.
Advanced Materials (2016)
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu.
Advanced Materials (2018)
An Artificial Neuron Based on a Threshold Switching Memristor
Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao.
IEEE Electron Device Letters (2018)
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
Yu Li;Yu Li;Shibing Long;Shibing Long;Qi Liu;Qi Liu;Hangbing Lv;Hangbing Lv.
Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.
Xiaolong Zhao;Xiaolong Zhao;Xiaolong Zhao;Sen Liu;Sen Liu;Jiebin Niu;Jiebin Niu;Lei Liao.
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: