World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
11250
World Ranking
2087
National Ranking
358

Materials Science

D-Index
56
Citations
11122
World Ranking
8261
National Ranking
2397

Hangbing Lv publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hangbing Lv sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 274 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hangbing Lv D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hangbing Lv sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hangbing Lv is affiliated with the Chinese Academy of Sciences in China. Their research primarily focuses on the field of Engineering, with an emphasis on Electrical and Electronic Engineering. Their work spans multiple subfields, including Materials Chemistry, Cellular and Molecular Neuroscience, Artificial Intelligence, and Biomedical Engineering.

The main topics of their research include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Photoreceptor and optogenetics research
  • Transition Metal Oxide Nanomaterials
  • Electronic and Structural Properties of Oxides
  • Neuroscience and Neural Engineering

Hangbing Lv has published articles in several notable venues. The most frequent publication venues include:

  • Advanced Electronic Materials (3 publications)
  • Micromachines (3 publications)
  • Nature Communications (2 publications)
  • IEEE Journal of Solid-State Circuits (2 publications)
  • Advanced Intelligent Systems (2 publications)

Among recent papers, notable publications include:

  • "A highly CMOS compatible hafnia-based ferroelectric diode," 2020, Nature Communications
  • "Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging," 2021, Nature Communications
  • "Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing," 2020, Advanced Materials
  • "Wake-Up Effect in HfO2-Based Ferroelectric Films," 2020, Advanced Electronic Materials
  • "One Transistor One Electrolyte-Gated Transistor Based Spiking Neural Network for Power-Efficient Neuromorphic Computing System," 2021, Advanced Functional Materials

Frequent co-authors collaborating with Hangbing Lv include:

  • Jianguo Yang (14 coauthored works)
  • Qing Luo (13 coauthored works)
  • Ming Liu (12 coauthored works)
  • Xiaoxin Xu (9 coauthored works)
  • Qi Liu (8 coauthored works)

Besides journal publications, Hangbing Lv has contributed to book literature, with a publication under Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" released in 2021.

Best Publications

  • Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

    Qi Liu;Jun Sun;Hangbing Lv;Shibing Long

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

    Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang

  • An Artificial Neuron Based on a Threshold Switching Memristor

    Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

    Unknown

  • A highly CMOS compatible hafnia-based ferroelectric diode.

    Qing Luo;Yan Cheng;Jianguo Yang;Rongrong Cao

  • Reproducible unipolar resistance switching in stoichiometric ZrO2 films

    X. Wu;P. Zhou;J. Li;L. Y. Chen

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

    Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu

  • Effects of Capping Electrode on Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 Thin Films

    Rongrong Cao;Yan Wang;Shengjie Zhao;Yang Yang

  • Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.

    Yu Li;Yu Li;Shibing Long;Shibing Long;Qi Liu;Qi Liu;Hangbing Lv;Hangbing Lv

  • Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Qiming He;Qiming He;Wenxiang Mu;Hang Dong;Hang Dong;Shibing Long;Shibing Long

  • Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.

    Xiaolong Zhao;Xiaolong Zhao;Xiaolong Zhao;Sen Liu;Sen Liu;Jiebin Niu;Jiebin Niu;Lei Liao

  • Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

    Xumeng Zhang;Sen Liu;Xiaolong Zhao;Facai Wu

  • Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing.

    Yue Li;Jikai Lu;Jikai Lu;Dashan Shang;Qi Liu

  • Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    Hangbing Lv;Xiaoxin Xu;Hongtao Liu;Ruoyu Liu

  • Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

    Yuan Qin;Shibing Long;Shibing Long;Qiming He;Hang Dong

  • Thermal crosstalk in 3-dimensional RRAM crossbar array

    Pengxiao Sun;Pengxiao Sun;Nianduan Lu;Ling Li;Yingtao Li

  • Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

    Rongrong Cao;Qi Liu;Ming Liu;Bing Song

  • Thermoelectric Seebeck effect in oxide-based resistive switching memory

    Ming Wang;Chong Bi;Ling Li;Shibing Long

  • Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Qing Luo;Qing Luo;Xiaoxin Xu;Xiaoxin Xu;Hongtao Liu;Hongtao Liu;Hangbing Lv;Hangbing Lv

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Shibing Long
Shibing Long University of Science and Technology of China
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Hongtao Liu
Hongtao Liu Central South University
Peng Yuan
Peng Yuan Chinese Academy of Sciences
Peng Zhou
Peng Zhou Fudan University
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
Jing Liu
Jing Liu Chinese Academy of Sciences
Xiangheng Xiao
Xiangheng Xiao Wuhan University

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