What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Voltage
Hangbing Lv mostly deals with Optoelectronics, Resistive random-access memory, Non-volatile memory, Graphene and Layer.
His Optoelectronics research includes elements of Transmission electron microscopy, Nanotechnology, Joule heating and Modulation.
His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Electrolyte, Protein filament, Computer data storage and Crossbar switch.
The study incorporates disciplines such as Resistive switching, Voltage, Integrated circuit, Thermal conduction and Electrical conductor in addition to Non-volatile memory.
His Graphene study combines topics in areas such as Nanoscopic scale, Driving current, Material system and Defect engineering.
His Layer research is multidisciplinary, incorporating elements of Analytical chemistry and X-ray photoelectron spectroscopy.
His most cited work include:
- Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. (396 citations)
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode (337 citations)
- Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (188 citations)
What are the main themes of his work throughout his whole career to date?
His main research concerns Optoelectronics, Resistive random-access memory, Voltage, Electronic engineering and Nanotechnology.
His research on Optoelectronics focuses in particular on Non-volatile memory.
He works mostly in the field of Resistive random-access memory, limiting it down to topics relating to Reset and, in certain cases, Weibull distribution.
His study on Nanotechnology is mostly dedicated to connecting different topics, such as Conductive filament.
His Layer course of study focuses on Graphene and Nanopore.
His Electrical conductor research incorporates themes from Programmable metallization cell and Protein filament.
He most often published in these fields:
- Optoelectronics (62.78%)
- Resistive random-access memory (56.02%)
- Voltage (21.43%)
What were the highlights of his more recent work (between 2018-2021)?
- Optoelectronics (62.78%)
- Resistive random-access memory (56.02%)
- Electronic engineering (21.05%)
In recent papers he was focusing on the following fields of study:
The scientist’s investigation covers issues in Optoelectronics, Resistive random-access memory, Electronic engineering, Voltage and Non-volatile memory.
His studies deal with areas such as Random access memory, Layer, Thermal stability, Gallium oxide and Resistive touchscreen as well as Optoelectronics.
Hangbing Lv has researched Resistive random-access memory in several fields, including Crossbar switch, Barrier layer, Stability, Bit error rate and Power network design.
His research in Electronic engineering intersects with topics in Neuromorphic engineering, Transistor and Resistive switching.
His Voltage research is multidisciplinary, relying on both Reset and Chip.
His Non-volatile memory study integrates concerns from other disciplines, such as Electronic circuit, Logic gate and Capacitor.
Between 2018 and 2021, his most popular works were:
- Recommended Methods to Study Resistive Switching Devices (160 citations)
- High-Performance Metal-Organic Chemical Vapor Deposition Grown $ arepsilon$ -Ga 2 O 3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes (25 citations)
- Review of deep ultraviolet photodetector based on gallium oxide (23 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Voltage
Hangbing Lv mainly focuses on Optoelectronics, Thin film, Gallium oxide, Photodiode and Resistive random-access memory.
His research integrates issues of Random access memory and Thermal stability in his study of Optoelectronics.
Hangbing Lv interconnects Electrical conductor, Programmable metallization cell, Nanochemistry and Protein filament in the investigation of issues within Random access memory.
Hangbing Lv works mostly in the field of Thin film, limiting it down to concerns involving Analytical chemistry and, occasionally, Hafnium compounds, Ferroelectric capacitor and Capacitor.
His study looks at the relationship between Gallium oxide and fields such as Photodetector, as well as how they intersect with chemical problems.
In his study, which falls under the umbrella issue of Resistive random-access memory, Switching time is strongly linked to Vacancy defect.
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