World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
11250
World Ranking
2087
National Ranking
357

Materials Science

D-Index
56
Citations
11122
World Ranking
8263
National Ranking
2396

Overview

Hangbing Lv is affiliated with the Chinese Academy of Sciences in China. Their research primarily focuses on the field of Engineering, with an emphasis on Electrical and Electronic Engineering. Their work spans multiple subfields, including Materials Chemistry, Cellular and Molecular Neuroscience, Artificial Intelligence, and Biomedical Engineering.

The main topics of their research include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Photoreceptor and optogenetics research
  • Transition Metal Oxide Nanomaterials
  • Electronic and Structural Properties of Oxides
  • Neuroscience and Neural Engineering

Hangbing Lv has published articles in several notable venues. The most frequent publication venues include:

  • Advanced Electronic Materials (3 publications)
  • Micromachines (3 publications)
  • Nature Communications (2 publications)
  • IEEE Journal of Solid-State Circuits (2 publications)
  • Advanced Intelligent Systems (2 publications)

Among recent papers, notable publications include:

  • "A highly CMOS compatible hafnia-based ferroelectric diode," 2020, Nature Communications
  • "Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging," 2021, Nature Communications
  • "Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing," 2020, Advanced Materials
  • "Wake-Up Effect in HfO2-Based Ferroelectric Films," 2020, Advanced Electronic Materials
  • "One Transistor One Electrolyte-Gated Transistor Based Spiking Neural Network for Power-Efficient Neuromorphic Computing System," 2021, Advanced Functional Materials

Frequent co-authors collaborating with Hangbing Lv include:

  • Jianguo Yang (14 coauthored works)
  • Qing Luo (13 coauthored works)
  • Ming Liu (12 coauthored works)
  • Xiaoxin Xu (9 coauthored works)
  • Qi Liu (8 coauthored works)

Besides journal publications, Hangbing Lv has contributed to book literature, with a publication under Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" released in 2021.

Best Publications

  • Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

    Qi Liu;Jun Sun;Hangbing Lv;Shibing Long

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

    Qi Liu;Qi Liu;Shibing Long;Hangbing Lv;Wei Wang;Wei Wang

  • An Artificial Neuron Based on a Threshold Switching Memristor

    Xumeng Zhang;Wei Wang;Qi Liu;Xiaolong Zhao

  • Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

    Haitao Sun;Qi Liu;Congfei Li;Shibing Long

  • Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

    Unknown

  • A highly CMOS compatible hafnia-based ferroelectric diode.

    Qing Luo;Yan Cheng;Jianguo Yang;Rongrong Cao

  • Reproducible unipolar resistance switching in stoichiometric ZrO2 films

    X. Wu;P. Zhou;J. Li;L. Y. Chen

  • Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

    Sen Liu;Nianduan Lu;Nianduan Lu;Xiaolong Zhao;Xiaolong Zhao;Hui Xu

  • Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

    Xiaolong Zhao;Xiaolong Zhao;Jun Ma;Xiangheng Xiao;Qi Liu;Qi Liu

  • Effects of Capping Electrode on Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 Thin Films

    Rongrong Cao;Yan Wang;Shengjie Zhao;Yang Yang

  • Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.

    Yu Li;Yu Li;Shibing Long;Shibing Long;Qi Liu;Qi Liu;Hangbing Lv;Hangbing Lv

  • Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Qiming He;Qiming He;Wenxiang Mu;Hang Dong;Hang Dong;Shibing Long;Shibing Long

  • Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.

    Xiaolong Zhao;Xiaolong Zhao;Xiaolong Zhao;Sen Liu;Sen Liu;Jiebin Niu;Jiebin Niu;Lei Liao

  • Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor

    Xumeng Zhang;Sen Liu;Xiaolong Zhao;Facai Wu

  • Oxide-Based Electrolyte-Gated Transistors for Spatiotemporal Information Processing.

    Yue Li;Jikai Lu;Jikai Lu;Dashan Shang;Qi Liu

  • Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

    Hangbing Lv;Xiaoxin Xu;Hongtao Liu;Ruoyu Liu

  • Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging

    Yuan Qin;Shibing Long;Shibing Long;Qiming He;Hang Dong

  • Thermal crosstalk in 3-dimensional RRAM crossbar array

    Pengxiao Sun;Pengxiao Sun;Nianduan Lu;Ling Li;Yingtao Li

  • Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

    Rongrong Cao;Qi Liu;Ming Liu;Bing Song

  • Thermoelectric Seebeck effect in oxide-based resistive switching memory

    Ming Wang;Chong Bi;Ling Li;Shibing Long

  • Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

    Qing Luo;Qing Luo;Xiaoxin Xu;Xiaoxin Xu;Hongtao Liu;Hongtao Liu;Hangbing Lv;Hangbing Lv

Frequent Co-Authors

Ming Liu
Ming Liu Fudan University
Shibing Long
Shibing Long University of Science and Technology of China
Writam Banerjee
Writam Banerjee GlobalFoundries (United States)
Hongtao Liu
Hongtao Liu Central South University
Peng Yuan
Peng Yuan Chinese Academy of Sciences
Peng Zhou
Peng Zhou Fudan University
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Jordi Suñé
Jordi Suñé Autonomous University of Barcelona
Jing Liu
Jing Liu Chinese Academy of Sciences
Xiangheng Xiao
Xiangheng Xiao Wuhan University

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