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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4298
World Ranking
5866
National Ranking
101

Overview

Tsung-Ming Tsai is affiliated with National Sun Yat-sen University in Taiwan. Their research primarily spans the fields of engineering and materials science with particular focus on electrical and electronic engineering, materials chemistry, and polymers and plastics.

The scientist has contributed extensively to the study and development of semiconductor materials and devices, thin-film transistor technologies, and advanced memory and neural computing. Other significant research topics include ferroelectric and negative capacitance devices, silicon and solar cell technologies, zinc oxide doping and properties, and transition metal oxide nanomaterials.

Frequent publication venues for their work include well-regarded journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of Physics D Applied Physics, SSRN Electronic Journal, and Applied Physics Express.

  • Ting-Chang Chang
  • Yung-Fang Tan
  • Wen-Chung Chen
  • Sheng-Yao Chou
  • Po-Hsun Chen

Representative recent papers authored or co-authored by Tsung-Ming Tsai demonstrate an emphasis on resistive switching characteristics and memory devices, as well as thin-film transistor behaviors:

  • Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory, 2020, Journal of Alloys and Compounds
  • Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing, 2020, IEEE Electron Device Letters
  • Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs, 2020, IEEE Transactions on Electron Devices
  • Investigation on the current conduction mechanism of HfZrOx ferroelectric memory, 2020, Journal of Physics D Applied Physics
  • Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination, 2021, IEEE Transactions on Electron Devices

Best Publications

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

  • Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

    Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang

  • Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu

  • Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

    Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  • Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

    Chih-Yang Lin;Po-Hsun Chen;Ting-Chang Chang;Kuan-Chang Chang

  • Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

    Tian-Jian Chu;Ting-Chang Chang;Tsung-Ming Tsai;Hsing-Hua Wu

  • Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO 2 -Based Resistive Random Access Memory

    Po-Hsun Chen;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  • Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

  • Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

    Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai

  • Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

    T. C. Chang;Po-Tsun Liu;Y. S. Mor;T. M. Tsai

  • Silicon introduced effect on resistive switching characteristics of WOX thin films

    Yong En Syu;Ting Chang Chang;Ting Chang Chang;Tsung Ming Tsai;Geng Wei Chang

  • Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Kai-Huang Chen

  • Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

  • Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

    Chih-Cheng Shih;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

    Yi-Ting Tseng;Tsung-Ming Tsai;Ting-Chang Chang;Ting-Chang Chang;Chih-Cheng Shih

  • Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

    Yi-Jiun Chen;Kuan-Chang Chang;Ting-Chang Chang;Hsin-Lu Chen

  • Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

    Chih-Yang Lin;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Rui Zhang
Rui Zhang National University of Singapore
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Shengdong Zhang
Shengdong Zhang Peking University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
He Qian
He Qian Tsinghua University
Huaqiang Wu
Huaqiang Wu Tsinghua University
Hao Wang
Hao Wang Swinburne University of Technology

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