World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4298
World Ranking
5866
National Ranking
101

Tsung-Ming Tsai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tsung-Ming Tsai sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 174 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tsung-Ming Tsai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tsung-Ming Tsai sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tsung-Ming Tsai is affiliated with National Sun Yat-sen University in Taiwan. Their research primarily spans the fields of engineering and materials science with particular focus on electrical and electronic engineering, materials chemistry, and polymers and plastics.

The scientist has contributed extensively to the study and development of semiconductor materials and devices, thin-film transistor technologies, and advanced memory and neural computing. Other significant research topics include ferroelectric and negative capacitance devices, silicon and solar cell technologies, zinc oxide doping and properties, and transition metal oxide nanomaterials.

Frequent publication venues for their work include well-regarded journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of Physics D Applied Physics, SSRN Electronic Journal, and Applied Physics Express.

  • Ting-Chang Chang
  • Yung-Fang Tan
  • Wen-Chung Chen
  • Sheng-Yao Chou
  • Po-Hsun Chen

Representative recent papers authored or co-authored by Tsung-Ming Tsai demonstrate an emphasis on resistive switching characteristics and memory devices, as well as thin-film transistor behaviors:

  • Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory, 2020, Journal of Alloys and Compounds
  • Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing, 2020, IEEE Electron Device Letters
  • Abnormal Hump Effect Induced by Hydrogen Diffusion During Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs, 2020, IEEE Transactions on Electron Devices
  • Investigation on the current conduction mechanism of HfZrOx ferroelectric memory, 2020, Journal of Physics D Applied Physics
  • Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination, 2021, IEEE Transactions on Electron Devices

Best Publications

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

  • Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

    Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang

  • Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu

  • Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

    Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  • Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

    Chih-Yang Lin;Po-Hsun Chen;Ting-Chang Chang;Kuan-Chang Chang

  • Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

    Tian-Jian Chu;Ting-Chang Chang;Tsung-Ming Tsai;Hsing-Hua Wu

  • Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO 2 -Based Resistive Random Access Memory

    Po-Hsun Chen;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  • Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

  • Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

    Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai

  • Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

    T. C. Chang;Po-Tsun Liu;Y. S. Mor;T. M. Tsai

  • Silicon introduced effect on resistive switching characteristics of WOX thin films

    Yong En Syu;Ting Chang Chang;Ting Chang Chang;Tsung Ming Tsai;Geng Wei Chang

  • Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Kai-Huang Chen

  • Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

  • Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

    Chih-Cheng Shih;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

    Yi-Ting Tseng;Tsung-Ming Tsai;Ting-Chang Chang;Ting-Chang Chang;Chih-Cheng Shih

  • Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

    Yi-Jiun Chen;Kuan-Chang Chang;Ting-Chang Chang;Hsin-Lu Chen

  • Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

    Chih-Yang Lin;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Rui Zhang
Rui Zhang National University of Singapore
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Shengdong Zhang
Shengdong Zhang Peking University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Huaqiang Wu
Huaqiang Wu Tsinghua University
Hao Wang
Hao Wang Swinburne University of Technology

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