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Electronics and Electrical Engineering

D-Index
33
Citations
17932
World Ranking
5917
National Ranking
105

Research.com Recognitions

  • 1995 - Member of the National Academy of Engineering For technical and educational contributions to semiconductor devices.

Overview

Simon M. Sze is affiliated with National Yang Ming Chiao Tung University in Taiwan and specializes primarily in engineering. Their scholarly work spans the areas of electrical and electronic engineering, materials chemistry, condensed matter physics, electronic, optical and magnetic materials, as well as cellular and molecular neuroscience.

The scientist's research topics include the following key areas:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • CCD and CMOS Imaging Sensors

Simon M. Sze has contributed to a number of publications, with recent papers including:

  • "Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices," 2020, Small
  • "Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology," 2020, Applied Physics Letters
  • "High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator," 2020, IEEE Electron Device Letters
  • "Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory," 2021, IEEE Transactions on Electron Devices
  • "Enhancing Hot-Carrier Reliability of Dual-Gate Low-Temperature Polysilicon TFTs by Increasing Lightly Doped Drain Length," 2020, IEEE Electron Device Letters

The scientist frequently publishes in these venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Journal of Physics D Applied Physics
  • Small

Simon M. Sze collaborates often with a set of frequent co-authors, which include:

  • Ting-Chang Chang
  • Yong-Ci Zhang
  • Yung-Fang Tan
  • Po-Hsun Chen
  • Shih-Kai Lin

In recognition of their contributions, the scientist was elected as a Member of the National Academy of Engineering in 1995 for technical and educational contributions to semiconductor devices.

Best Publications

  • Physics of Semiconductor Devices: Sze/Physics

    S.M. Sze;Kwok K. Ng

  • Physics of semiconductor devices /2nd edition/

    Unknown

  • Overview of emerging nonvolatile memory technologies

    Jagan Singh Meena;Simon Min Sze;Umesh Chand;Tseung-Yuen Tseng

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • High-speed semiconductor devices

    S. M. Sze

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Fundamentals of Semiconductor Fabrication

    Gary S. May;Simon M. Sze

  • Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

    Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Metal‐Semiconductor Contacts

    S.M. Sze;Kwok K. Ng

  • Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

    Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

    Yi-Ming Li;S. M. Sze;Tien-Sheng Chao

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

  • Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

    Yiming Li;O. Voskoboynikov;O. Voskoboynikov;C.P. Lee;S.M. Sze

  • Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects

    Po-Tsun Liu;Ting-Chang Chan;Ya-Liang Yang;Yi-Fang Cheng

  • The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

    Po-Tsun Liu;T. C. Chang;S. M. Sze;Fu-Ming Pan

  • Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment

    Po–Tsun Liu;Ting–Chang Chang;Yi–Shian Mor;Simon M. Sze

  • Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor

    Chur-Shyang Fuh;Po-Tsun Liu;Wei-Hsun Huang;Simon M. Sze

  • A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

    Shih-Ching Chen;Ting-Chang Chang;Po-Tsun Liu;Yung-Chun Wu

  • Physics and Properties of Semiconductors—A Review

    S.M. Sze;Kwok K. Ng

  • Effects of grain boundaries on laser crystallized poly-Si MOSFET's

    Unknown

  • Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  • Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.

    Chih-Yang Lin;Jia Chen;Po-Hsun Chen;Po-Hsun Chen;Ting-Chang Chang

  • Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

    Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai

  • Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings

    Yi-Ming Li;Hsiao Mei Lu;O. Voskoboynikov;O. Voskoboynikov;C. P. Lee

  • Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot

    Yi-Ming Li;Jinn Liang Liu;O. Voskoboynikov;O. Voskoboynikov;C. P. Lee

  • Energy and coordinate dependent effective mass and confined electron states in quantum dots

    Yiming Li;O Voskoboynikov;O Voskoboynikov;C.P Lee;S.M Sze

  • Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

    Yi-Ting Tseng;Tsung-Ming Tsai;Ting-Chang Chang;Ting-Chang Chang;Chih-Cheng Shih

  • Semiconductor devices : pioneering papers

    S M Sze

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Po-Tsun Liu
Po-Tsun Liu National Yang Ming Chiao Tung University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Rui Zhang
Rui Zhang National University of Singapore
Dong-Sing Wuu
Dong-Sing Wuu National Chi Nan University
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Jack C. Lee
Jack C. Lee The University of Texas at Austin

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