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Simon M. Sze

D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Electronics and Electrical Engineering 33 5917 105 135 17932

Simon M. Sze publications per year

The chart shows the history of publications by Simon M. Sze between 1967 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Simon M. Sze published across 58 years, from 1967 to 2024, averaging 2.7 papers a year. Output peaked at 15 publications in 2006. 7 of the 154 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1967 to 2024. Vertical axis: number of publications, 0 to 15. Peak 15 publications in 2006. 1967: 1 publication 1968: 0 publications 1969: 1 publication 1970: 0 publications 1971: 1 publication 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 4 publications 1982: 2 publications 1983: 3 publications 1984: 0 publications 1985: 1 publication 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 1 publication 1992: 3 publications 1993: 0 publications 1994: 3 publications 1995: 1 publication 1996: 0 publications 1997: 1 publication 1998: 2 publications 1999: 0 publications 2000: 3 publications 2001: 12 publications 2002: 10 publications 2003: 6 publications 2004: 3 publications 2005: 2 publications 2006: 15 publications 2007: 2 publications 2008: 3 publications 2009: 0 publications 2010: 2 publications 2011: 4 publications 2012: 6 publications 2013: 11 publications 2014: 5 publications 2015: 5 publications 2016: 7 publications 2017: 2 publications 2018: 6 publications 2019: 3 publications 2020: 8 publications 2021: 4 publications 2022: 4 publications 2023: 5 publications 2024: 2 publications
1967 2024

154 publications in total across all disciplines

View publications per year as a table
Simon M. Sze: publications per year, 1967 to 2024
Year Publications
1967 1
1968 0
1969 1
1970 0
1971 1
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 4
1982 2
1983 3
1984 0
1985 1
1986 0
1987 0
1988 0
1989 0
1990 0
1991 1
1992 3
1993 0
1994 3
1995 1
1996 0
1997 1
1998 2
1999 0
2000 3
2001 12
2002 10
2003 6
2004 3
2005 2
2006 15
2007 2
2008 3
2009 0
2010 2
2011 4
2012 6
2013 11
2014 5
2015 5
2016 7
2017 2
2018 6
2019 3
2020 8
2021 4
2022 4
2023 5
2024 2
Total 154
Download as CSV

Simon M. Sze publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Simon M. Sze sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 135 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 135
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Simon M. Sze D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Simon M. Sze sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 33 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262 33
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 1995 - Member of the National Academy of Engineering For technical and educational contributions to semiconductor devices.

Overview

Simon M. Sze is affiliated with National Yang Ming Chiao Tung University in Taiwan and specializes primarily in engineering. Their scholarly work spans the areas of electrical and electronic engineering, materials chemistry, condensed matter physics, electronic, optical and magnetic materials, as well as cellular and molecular neuroscience.

The scientist's research topics include the following key areas:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • CCD and CMOS Imaging Sensors

Simon M. Sze has contributed to a number of publications, with recent papers including:

  • "Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices," 2020, Small
  • "Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology," 2020, Applied Physics Letters
  • "High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator," 2020, IEEE Electron Device Letters
  • "Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory," 2021, IEEE Transactions on Electron Devices
  • "Enhancing Hot-Carrier Reliability of Dual-Gate Low-Temperature Polysilicon TFTs by Increasing Lightly Doped Drain Length," 2020, IEEE Electron Device Letters

The scientist frequently publishes in these venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Journal of Physics D Applied Physics
  • Small

Simon M. Sze collaborates often with a set of frequent co-authors, which include:

  • Ting-Chang Chang
  • Yong-Ci Zhang
  • Yung-Fang Tan
  • Po-Hsun Chen
  • Shih-Kai Lin

In recognition of their contributions, the scientist was elected as a Member of the National Academy of Engineering in 1995 for technical and educational contributions to semiconductor devices.

Best Publications

  • Physics of Semiconductor Devices: Sze/Physics

    S.M. Sze;Kwok K. Ng

  • Physics of semiconductor devices /2nd edition/

    Unknown

  • Overview of emerging nonvolatile memory technologies

    Jagan Singh Meena;Simon Min Sze;Umesh Chand;Tseung-Yuen Tseng

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • High-speed semiconductor devices

    S. M. Sze

  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

    Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang

  • Fundamentals of Semiconductor Fabrication

    Gary S. May;Simon M. Sze

  • Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

    Wei Ren Chen;Ting Chang Chang;Jui Lung Yeh;S. M. Sze

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Metal‐Semiconductor Contacts

    S.M. Sze;Kwok K. Ng

  • Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

    Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

    Yi-Ming Li;S. M. Sze;Tien-Sheng Chao

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

    Y. S. Mor;T. C. Chang;Po-Tsun Liu;T. M. Tsai

  • Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

    Yiming Li;O. Voskoboynikov;O. Voskoboynikov;C.P. Lee;S.M. Sze

  • Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects

    Po-Tsun Liu;Ting-Chang Chan;Ya-Liang Yang;Yi-Fang Cheng

  • The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

    Po-Tsun Liu;T. C. Chang;S. M. Sze;Fu-Ming Pan

  • Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment

    Po–Tsun Liu;Ting–Chang Chang;Yi–Shian Mor;Simon M. Sze

  • Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor

    Chur-Shyang Fuh;Po-Tsun Liu;Wei-Hsun Huang;Simon M. Sze

  • A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

    Shih-Ching Chen;Ting-Chang Chang;Po-Tsun Liu;Yung-Chun Wu

  • Physics and Properties of Semiconductors—A Review

    S.M. Sze;Kwok K. Ng

  • Effects of grain boundaries on laser crystallized poly-Si MOSFET's

    Unknown

  • Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  • Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.

    Chih-Yang Lin;Jia Chen;Po-Hsun Chen;Po-Hsun Chen;Ting-Chang Chang

  • Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

    Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai

  • Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings

    Yi-Ming Li;Hsiao Mei Lu;O. Voskoboynikov;O. Voskoboynikov;C. P. Lee

  • Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot

    Yi-Ming Li;Jinn Liang Liu;O. Voskoboynikov;O. Voskoboynikov;C. P. Lee

  • Energy and coordinate dependent effective mass and confined electron states in quantum dots

    Yiming Li;O Voskoboynikov;O Voskoboynikov;C.P Lee;S.M Sze

  • Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

    Yi-Ting Tseng;Tsung-Ming Tsai;Ting-Chang Chang;Ting-Chang Chang;Chih-Cheng Shih

  • Semiconductor devices : pioneering papers

    S M Sze

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Po-Tsun Liu
Po-Tsun Liu National Yang Ming Chiao Tung University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute
Chien-Ping Lee
Chien-Ping Lee National Yang Ming Chiao Tung University
Yue Hao
Yue Hao Xidian University
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Xiangshui Miao
Xiangshui Miao Huazhong University of Science and Technology

External Links

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Best Scientists Citing Simon M. Sze

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 200

Kuan-Chang Chang

Kuan-Chang Chang

Peking University

Publications: 57

Po-Tsun Liu

Po-Tsun Liu

National Yang Ming Chiao Tung University

Publications: 50

Tsung-Ming Tsai

Tsung-Ming Tsai

National Sun Yat-sen University

Publications: 48

Tseung-Yuen Tseng

Tseung-Yuen Tseng

National Yang Ming Chiao Tung University

Publications: 44

Ming Liu

Ming Liu

Fudan University

Publications: 40

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 32

Yao-Feng Chang

Yao-Feng Chang

The University of Texas at Austin

Publications: 30

Zhong Lin Wang

Zhong Lin Wang

Georgia Institute of Technology

Publications: 27

Sungjun Kim

Sungjun Kim

Dongguk University

Publications: 27

Hangbing Lv

Hangbing Lv

Chinese Academy of Sciences

Publications: 24

Xiangshui Miao

Xiangshui Miao

Huazhong University of Science and Technology

Publications: 21

Jack C. Lee

Jack C. Lee

The University of Texas at Austin

Publications: 21

Xiangfeng Duan

Xiangfeng Duan

University of California, Los Angeles

Publications: 20

Byung-Gook Park

Byung-Gook Park

Seoul National University

Publications: 20

Mario Caironi

Mario Caironi

Italian Institute of Technology

Publications: 20

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