D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 35 Citations 11,971 216 World Ranking 5075 National Ranking 47

Research.com Recognitions

Awards & Achievements

1995 - Member of the National Academy of Engineering For technical and educational contributions to semiconductor devices.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary scientific interests are in Optoelectronics, Resistive random-access memory, Analytical chemistry, Nanotechnology and Thermal conduction. His Optoelectronics study combines topics in areas such as Layer, Thin-film transistor, Thin film and Voltage. He interconnects Non-volatile memory, Silicon oxide, Indium tin oxide and Indium gallium zinc oxide in the investigation of issues within Resistive random-access memory.

His work carried out in the field of Silicon oxide brings together such families of science as Joule heating, Tin doping, Sign, Engineering physics and Supercritical fluid. His Analytical chemistry research is multidisciplinary, relying on both Porosity, Schottky diode, Hydrogen, Passivation and Dielectric. Simon M. Sze has researched Nanotechnology in several fields, including Resistor, Electrical conductor, Protein filament and Reliability.

His most cited work include:

  • Physics of Semiconductor Devices: Sze/Physics (3179 citations)
  • Overview of emerging nonvolatile memory technologies (336 citations)
  • Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films (173 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Resistive random-access memory, Thin film, Voltage and Layer. His work deals with themes such as Transistor and Electrode, Thin-film transistor, which intersect with Optoelectronics. His biological study spans a wide range of topics, including Nanotechnology, Tin, Current, Thermal conduction and Indium tin oxide.

His Thermal conduction research is multidisciplinary, incorporating perspectives in Schottky diode and Condensed matter physics. His Thin film research is multidisciplinary, incorporating elements of Annealing and Dielectric. Simon M. Sze interconnects Random access memory, Electric field and Reliability in the investigation of issues within Voltage.

He most often published in these fields:

  • Optoelectronics (56.85%)
  • Resistive random-access memory (29.44%)
  • Thin film (15.73%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (56.85%)
  • Thin-film transistor (12.90%)
  • Resistive random-access memory (29.44%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Thin-film transistor, Resistive random-access memory, Transistor and Voltage. Simon M. Sze studies Doping, a branch of Optoelectronics. His study in Thin-film transistor is interdisciplinary in nature, drawing from both Threshold voltage, High-κ dielectric, Electron mobility and Active layer.

His Resistive random-access memory research integrates issues from Thermal conduction, Oxide, Tin and Current. His study on Transistor also encompasses disciplines like

  • Non-volatile memory most often made with reference to Logic gate,
  • Stress, which have a strong connection to Parasitic capacitance and Electromagnetic shielding,
  • Ferroelectricity that intertwine with fields like Electrical impedance and Capacitance. The study incorporates disciplines such as Reliability, Random access memory, Electrode and Pulse in addition to Voltage.

Between 2017 and 2021, his most popular works were:

  • LiSiO X -Based Analog Memristive Synapse for Neuromorphic Computing (19 citations)
  • Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture (18 citations)
  • Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation (15 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His scientific interests lie mostly in Optoelectronics, Thin-film transistor, Amorphous solid, Voltage and Programmable metallization cell. His Optoelectronics study integrates concerns from other disciplines, such as Oxide, Indium gallium zinc oxide, Electric field, Layer and Physical vapor deposition. He usually deals with Amorphous solid and limits it to topics linked to Tungsten and Doping.

His studies deal with areas such as Pulse and Electrode as well as Voltage. His work blends Reset and Resistive random-access memory studies together. Simon M. Sze has included themes like Thermal conduction and Square wave in his Resistive random-access memory study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Physics of Semiconductor Devices: Sze/Physics

S.M. Sze;Kwok K. Ng.
(2006)

6928 Citations

Overview of emerging nonvolatile memory technologies

Jagan Singh Meena;Simon Min Sze;Umesh Chand;Tseung-Yuen Tseng.
Nanoscale Research Letters (2014)

656 Citations

High-speed semiconductor devices

S. M. Sze.
New York (1990)

522 Citations

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang.
Applied Physics Letters (2010)

267 Citations

Fundamentals of Semiconductor Fabrication

Gary S. May;Simon M. Sze.
(2003)

208 Citations

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)

179 Citations

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen.
Electrochemical and Solid State Letters (2010)

139 Citations

A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

Yi-Ming Li;S. M. Sze;Tien-Sheng Chao.
Engineering With Computers (2002)

121 Citations

Metal‐Semiconductor Contacts

S.M. Sze;Kwok K. Ng.
(2006)

115 Citations

Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

Yiming Li;O. Voskoboynikov;O. Voskoboynikov;C.P. Lee;S.M. Sze.
Computer Physics Communications (2001)

115 Citations

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