1995 - Member of the National Academy of Engineering For technical and educational contributions to semiconductor devices.
His primary scientific interests are in Optoelectronics, Resistive random-access memory, Analytical chemistry, Nanotechnology and Thermal conduction. His Optoelectronics study combines topics in areas such as Layer, Thin-film transistor, Thin film and Voltage. He interconnects Non-volatile memory, Silicon oxide, Indium tin oxide and Indium gallium zinc oxide in the investigation of issues within Resistive random-access memory.
His work carried out in the field of Silicon oxide brings together such families of science as Joule heating, Tin doping, Sign, Engineering physics and Supercritical fluid. His Analytical chemistry research is multidisciplinary, relying on both Porosity, Schottky diode, Hydrogen, Passivation and Dielectric. Simon M. Sze has researched Nanotechnology in several fields, including Resistor, Electrical conductor, Protein filament and Reliability.
His main research concerns Optoelectronics, Resistive random-access memory, Thin film, Voltage and Layer. His work deals with themes such as Transistor and Electrode, Thin-film transistor, which intersect with Optoelectronics. His biological study spans a wide range of topics, including Nanotechnology, Tin, Current, Thermal conduction and Indium tin oxide.
His Thermal conduction research is multidisciplinary, incorporating perspectives in Schottky diode and Condensed matter physics. His Thin film research is multidisciplinary, incorporating elements of Annealing and Dielectric. Simon M. Sze interconnects Random access memory, Electric field and Reliability in the investigation of issues within Voltage.
The scientist’s investigation covers issues in Optoelectronics, Thin-film transistor, Resistive random-access memory, Transistor and Voltage. Simon M. Sze studies Doping, a branch of Optoelectronics. His study in Thin-film transistor is interdisciplinary in nature, drawing from both Threshold voltage, High-κ dielectric, Electron mobility and Active layer.
His Resistive random-access memory research integrates issues from Thermal conduction, Oxide, Tin and Current. His study on Transistor also encompasses disciplines like
His scientific interests lie mostly in Optoelectronics, Thin-film transistor, Amorphous solid, Voltage and Programmable metallization cell. His Optoelectronics study integrates concerns from other disciplines, such as Oxide, Indium gallium zinc oxide, Electric field, Layer and Physical vapor deposition. He usually deals with Amorphous solid and limits it to topics linked to Tungsten and Doping.
His studies deal with areas such as Pulse and Electrode as well as Voltage. His work blends Reset and Resistive random-access memory studies together. Simon M. Sze has included themes like Thermal conduction and Square wave in his Resistive random-access memory study.
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Physics of Semiconductor Devices: Sze/Physics
S.M. Sze;Kwok K. Ng.
(2006)
Overview of emerging nonvolatile memory technologies
Jagan Singh Meena;Simon Min Sze;Umesh Chand;Tseung-Yuen Tseng.
Nanoscale Research Letters (2014)
High-speed semiconductor devices
S. M. Sze.
New York (1990)
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen;Ting-Chang Chang;Chih-Tsung Tsai;Sheng-Yao Huang.
Applied Physics Letters (2010)
Fundamentals of Semiconductor Fabrication
Gary S. May;Simon M. Sze.
(2003)
Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Shih-Ching Chen.
Electrochemical and Solid State Letters (2010)
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
Yi-Ming Li;S. M. Sze;Tien-Sheng Chao.
Engineering With Computers (2002)
Metal‐Semiconductor Contacts
S.M. Sze;Kwok K. Ng.
(2006)
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
Yiming Li;O. Voskoboynikov;O. Voskoboynikov;C.P. Lee;S.M. Sze.
Computer Physics Communications (2001)
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