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Thomas Mikolajick

Thomas Mikolajick

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Electronics and Electrical Engineering
Germany
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
99
Citations
36704
World Ranking
196
National Ranking
3

Materials Science

D-Index
99
Citations
37656
World Ranking
1102
National Ranking
60

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Germany Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Germany Leader Award

Overview

Thomas Mikolajick is affiliated with Namlab GmbH in Germany and has a substantial body of research focusing on engineering and materials science, particularly within electrical and electronic engineering and materials chemistry. Their research spans multiple topics primarily related to ferroelectric devices, semiconductor materials, and advanced memory technologies.

The main topics covered in Mikolajick's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Piezoelectric Materials
  • Nanowire Synthesis and Applications

Mikolajick has contributed to several notable publications. Recent papers include:

  • The Past, the Present, and the Future of Ferroelectric Memories (2020), IEEE Transactions on Electron Devices
  • Next generation ferroelectric materials for semiconductor process integration and their applications (2021), Journal of Applied Physics

Other frequently cited works in the field, where Mikolajick appears as an author, are:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022), Maryland Shared Open Access Repository (USMAI Consortium)
  • The fundamentals and applications of ferroelectric HfO2 (2022), Nature Reviews Materials
  • Ferroelectric field-effect transistors based on HfO 2: a review (2021), Nanotechnology

The distribution of publication venues highlights areas where Mikolajick's research is frequently published. This includes:

  • Applied Physics Letters
  • ACS Applied Materials & Interfaces
  • IEEE Journal of the Electron Devices Society
  • IEEE Transactions on Electron Devices
  • ACS Applied Electronic Materials

Collaborations are an important aspect of Mikolajick's work, with frequent co-authors being:

  • Uwe Schroeder
  • Stefan Slesazeck
  • Jens Trommer
  • Patrick D. Lomenzo
  • Suzanne Lancaster

Mikolajick's expertise and research focus are situated mainly in engineering disciplines involving semiconductor and ferroelectric technologies, with a comprehensive output in both academic articles and contributions to advancing the understanding of novel materials and device integration.

Best Publications

  • Ferroelectricity in Simple Binary ZrO2 and HfO2

    Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Stefan Mueller;Johannes Mueller;Aarti Singh;Stefan Riedel

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • Ferroelectricity in yttrium-doped hafnium oxide

    J. Müller;U. Schröder;T. S. Böscke;I. Müller

  • The fundamentals and applications of ferroelectric HfO2

    Unknown

  • Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder

  • Stabilizing the ferroelectric phase in doped hafnium oxide

    M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu

  • Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  • Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

    J. Muller;T. S. Boscke;S. Muller;E. Yurchuk

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Reconfigurable Silicon Nanowire Transistors

    André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick

  • Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

    J. Müller;P. Polakowski;S. Mueller;T. Mikolajick

  • The Past, the Present, and the Future of Ferroelectric Memories

    T. Mikolajick;U. Schroeder;S. Slesazeck

  • Unveiling the double-well energy landscape in a ferroelectric layer

    Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann

  • Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin

  • Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films

    Everett D. Grimley;Tony Schenk;Xiahan Sang;Milan Pešić

  • Phase transitions in ferroelectric silicon doped hafnium oxide

    T. S. Böscke;St. Teichert;D. Bräuhaus;J. Müller

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

    M. H. Park;T. Schenk;C. M. Fancher;E. D. Grimley

  • Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Tony Schenk

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Min Hyuk Park
Min Hyuk Park Seoul National University
Heidemarie Schmidt
Heidemarie Schmidt Leibniz Institute of Photonic Technology
Ulrich Böttger
Ulrich Böttger RWTH Aachen University
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology

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