World's Best Scientists 2026 revealed!
Thomas Mikolajick

Thomas Mikolajick

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Electronics and Electrical Engineering
Germany
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
99
Citations
36704
World Ranking
196
National Ranking
2

Materials Science

D-Index
99
Citations
37656
World Ranking
1102
National Ranking
60

Thomas Mikolajick publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Thomas Mikolajick sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 687 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Thomas Mikolajick D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas Mikolajick sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 99 D-Index — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Germany Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Germany Leader Award

Overview

Thomas Mikolajick is affiliated with Namlab GmbH in Germany and has a substantial body of research focusing on engineering and materials science, particularly within electrical and electronic engineering and materials chemistry. Their research spans multiple topics primarily related to ferroelectric devices, semiconductor materials, and advanced memory technologies.

The main topics covered in Mikolajick's work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Ferroelectric and Piezoelectric Materials
  • Nanowire Synthesis and Applications

Mikolajick has contributed to several notable publications. Recent papers include:

  • The Past, the Present, and the Future of Ferroelectric Memories (2020), IEEE Transactions on Electron Devices
  • Next generation ferroelectric materials for semiconductor process integration and their applications (2021), Journal of Applied Physics

Other frequently cited works in the field, where Mikolajick appears as an author, are:

  • Embedded Devices for Neuromorphic Time-Series Assessment (2022), Maryland Shared Open Access Repository (USMAI Consortium)
  • The fundamentals and applications of ferroelectric HfO2 (2022), Nature Reviews Materials
  • Ferroelectric field-effect transistors based on HfO 2: a review (2021), Nanotechnology

The distribution of publication venues highlights areas where Mikolajick's research is frequently published. This includes:

  • Applied Physics Letters
  • ACS Applied Materials & Interfaces
  • IEEE Journal of the Electron Devices Society
  • IEEE Transactions on Electron Devices
  • ACS Applied Electronic Materials

Collaborations are an important aspect of Mikolajick's work, with frequent co-authors being:

  • Uwe Schroeder
  • Stefan Slesazeck
  • Jens Trommer
  • Patrick D. Lomenzo
  • Suzanne Lancaster

Mikolajick's expertise and research focus are situated mainly in engineering disciplines involving semiconductor and ferroelectric technologies, with a comprehensive output in both academic articles and contributions to advancing the understanding of novel materials and device integration.

Best Publications

  • Ferroelectricity in Simple Binary ZrO2 and HfO2

    Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller

  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim

  • Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

    Stefan Mueller;Johannes Mueller;Aarti Singh;Stefan Riedel

  • Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

    Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani

  • Ferroelectricity in yttrium-doped hafnium oxide

    J. Müller;U. Schröder;T. S. Böscke;I. Müller

  • The fundamentals and applications of ferroelectric HfO2

    Unknown

  • Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder

  • Stabilizing the ferroelectric phase in doped hafnium oxide

    M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu

  • Review and perspective on ferroelectric HfO2-based thin films for memory applications

    Min Hyuk Park;Young Hwan Lee;Thomas Mikolajick;Uwe Schroeder

  • Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

    J. Muller;T. S. Boscke;S. Muller;E. Yurchuk

  • A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

    S. Dunkel;M. Trentzsch;R. Richter;P. Moll

  • Reconfigurable Silicon Nanowire Transistors

    André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick

  • Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

    J. Müller;P. Polakowski;S. Mueller;T. Mikolajick

  • The Past, the Present, and the Future of Ferroelectric Memories

    T. Mikolajick;U. Schroeder;S. Slesazeck

  • Unveiling the double-well energy landscape in a ferroelectric layer

    Michael Hoffmann;Franz P. G. Fengler;Melanie Herzig;Terence Mittmann

  • Impact of different dopants on the switching properties of ferroelectric hafniumoxide

    Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin

  • Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films

    Everett D. Grimley;Tony Schenk;Xiahan Sang;Milan Pešić

  • Phase transitions in ferroelectric silicon doped hafnium oxide

    T. S. Böscke;St. Teichert;D. Bräuhaus;J. Müller

  • Next generation ferroelectric materials for semiconductor process integration and their applications

    T. Mikolajick;S. Slesazeck;H. Mulaosmanovic;M. H. Park

  • A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

    M. Trentzsch;S. Flachowsky;R. Richter;J. Paul

  • A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

    M. H. Park;T. Schenk;C. M. Fancher;E. D. Grimley

  • Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

    Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Tony Schenk

Frequent Co-Authors

Stefan Slesazeck
Stefan Slesazeck Namlab gGmbH
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Johannes Müller
Johannes Müller GlobalFoundries (Germany)
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Min Hyuk Park
Min Hyuk Park Seoul National University
Heidemarie Schmidt
Heidemarie Schmidt Leibniz Institute of Photonic Technology
Ulrich Böttger
Ulrich Böttger RWTH Aachen University
Oliver G. Schmidt
Oliver G. Schmidt Chemnitz University of Technology

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