D-Index & Metrics Best Publications
Thomas Mikolajick

Thomas Mikolajick

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 55 Citations 10,418 325 World Ranking 806 National Ranking 21
Materials Science D-index 63 Citations 15,583 400 World Ranking 2703 National Ranking 176

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

The scientist’s investigation covers issues in Ferroelectricity, Optoelectronics, Thin film, Nanotechnology and Non-volatile memory. His Ferroelectricity study integrates concerns from other disciplines, such as Orthorhombic crystal system, Condensed matter physics, Doping and Capacitor. His biological study spans a wide range of topics, including Field-effect transistor, Transistor, Polarization and Electrical engineering.

His Thin film research is multidisciplinary, incorporating perspectives in Ferroelectric capacitor, Annealing, Coercivity, Analytical chemistry and Electronic engineering. In his research, Joule heating and Quantum tunnelling is intimately related to Thermal conduction, which falls under the overarching field of Nanotechnology. His studies in Non-volatile memory integrate themes in fields like Threshold voltage, Carbon nanotube and Resistive switching.

His most cited work include:

  • Ferroelectricity in Simple Binary ZrO2 and HfO2 (614 citations)
  • Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films (380 citations)
  • Incipient Ferroelectricity in Al-Doped HfO2 Thin Films (364 citations)

What are the main themes of his work throughout his whole career to date?

Thomas Mikolajick mainly investigates Optoelectronics, Ferroelectricity, Transistor, Capacitor and Electrical engineering. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor, Layer and Electrode. Thomas Mikolajick has included themes like Thin film, Condensed matter physics, Doping and Hafnium oxide in his Ferroelectricity study.

The study incorporates disciplines such as Annealing and Analytical chemistry in addition to Thin film. As part of the same scientific family, Thomas Mikolajick usually focuses on Transistor, concentrating on Nanowire and intersecting with Schottky barrier. His Capacitor research integrates issues from Dram and Tin.

He most often published in these fields:

  • Optoelectronics (50.51%)
  • Ferroelectricity (32.31%)
  • Transistor (19.39%)

What were the highlights of his more recent work (between 2018-2021)?

  • Ferroelectricity (32.31%)
  • Optoelectronics (50.51%)
  • Transistor (19.39%)

In recent papers he was focusing on the following fields of study:

Thomas Mikolajick mostly deals with Ferroelectricity, Optoelectronics, Transistor, Capacitor and Field-effect transistor. His biological study spans a wide range of topics, including Doping, Phase, Non-volatile memory, Engineering physics and Hafnium oxide. His Optoelectronics research includes themes of Tin and Voltage.

His Capacitor research incorporates elements of Polarization, Electrode and Thin film. His Thin film research focuses on Pyroelectricity and how it connects with Condensed matter physics. His study focuses on the intersection of Field-effect transistor and fields such as Silicon with connections in the field of Passivation.

Between 2018 and 2021, his most popular works were:

  • Unveiling the double-well energy landscape in a ferroelectric layer. (112 citations)
  • Towards Oxide Electronics: a Roadmap (102 citations)
  • Nanoscale resistive switching memory devices: a review. (52 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Thomas Mikolajick mainly focuses on Ferroelectricity, Optoelectronics, Transistor, Capacitor and Condensed matter physics. He combines subjects such as Phase transition, Phase, Hafnia, Engineering physics and Hafnium oxide with his study of Ferroelectricity. His Dielectric study in the realm of Optoelectronics interacts with subjects such as Negative impedance converter.

His research in Transistor focuses on subjects like Non-volatile memory, which are connected to Threshold voltage and Polarization. The Capacitor study combines topics in areas such as X-ray photoelectron spectroscopy, Analytical chemistry, Thin film, Tin and Electrode. His research integrates issues of Electronic engineering, CMOS and Silicon in his study of Field-effect transistor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Ferroelectricity in Simple Binary ZrO2 and HfO2

Johannes Müller;Tim S. Böscke;Uwe Schröder;Stefan Mueller.
Nano Letters (2012)

810 Citations

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

Stefan Mueller;Johannes Mueller;Aarti Singh;Stefan Riedel.
Advanced Functional Materials (2012)

458 Citations

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Min Hyuk Park;Young Hwan Lee;Han Joon Kim;Yu Jin Kim.
Advanced Materials (2015)

400 Citations

Ferroelectricity in yttrium-doped hafnium oxide

J. Müller;U. Schröder;T. S. Böscke;I. Müller.
Journal of Applied Physics (2011)

357 Citations

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

J. Müller;T. S. Böscke;D. Bräuhaus;U. Schröder.
Applied Physics Letters (2011)

315 Citations

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

Milan Pešić;Franz Paul Gustav Fengler;Luca Larcher;Andrea Padovani.
Advanced Functional Materials (2016)

307 Citations

Reconfigurable Silicon Nanowire Transistors

André Heinzig;Stefan Slesazeck;Franz Kreupl;Thomas Mikolajick.
Nano Letters (2012)

287 Citations

Stabilizing the ferroelectric phase in doped hafnium oxide

M. Hoffmann;U. Schroeder;T. Schenk;T. Shimizu.
Journal of Applied Physics (2015)

252 Citations

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

J. Müller;P. Polakowski;S. Mueller;T. Mikolajick.
ECS Journal of Solid State Science and Technology (2015)

243 Citations

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Uwe Schroeder;Ekaterina Yurchuk;Johannes Müller;Dominik Martin.
Japanese Journal of Applied Physics (2014)

219 Citations

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