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Asif Islam Khan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 40 4444 4264 1582 1479 155 7896

Asif Islam Khan publications per year

The chart shows the history of publications by Asif Islam Khan between 2004 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Asif Islam Khan published across 22 years, from 2004 to 2025, averaging 10 papers a year. Output peaked at 44 publications in 2025. 66 of the 219 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 2004 to 2025. Vertical axis: number of publications, 0 to 44. Peak 44 publications in 2025. 2004: 1 publication 2005: 0 publications 2006: 0 publications 2007: 2 publications 2008: 1 publication 2009: 3 publications 2010: 0 publications 2011: 5 publications 2012: 3 publications 2013: 2 publications 2014: 4 publications 2015: 12 publications 2016: 9 publications 2017: 12 publications 2018: 9 publications 2019: 16 publications 2020: 22 publications 2021: 23 publications 2022: 16 publications 2023: 13 publications 2024: 22 publications 2025: 44 publications
2004 2025

219 publications in total across all disciplines

View publications per year as a table
Asif Islam Khan: publications per year, 2004 to 2025
Year Publications
2004 1
2005 0
2006 0
2007 2
2008 1
2009 3
2010 0
2011 5
2012 3
2013 2
2014 4
2015 12
2016 9
2017 12
2018 9
2019 16
2020 22
2021 23
2022 16
2023 13
2024 22
2025 44
Total 219
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Asif Islam Khan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Asif Islam Khan sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 155 publications — 15th percentile

15% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 155
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Asif Islam Khan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Asif Islam Khan sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 40 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205 40
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2006 - IEEE Fellow For contributions to the development of III-nitride electronic sensor systems.

Overview

Asif Islam Khan is affiliated with the Georgia Institute of Technology in the United States. Their research focus spans multiple fields and topics primarily related to engineering and materials science, with a special emphasis on electrical and electronic engineering and materials chemistry.

The scientist's main fields of study include:

  • Engineering
  • Materials Science

Their research also extends more specifically into subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Biochemistry
  • Electronic, Optical and Magnetic Materials

Khan's main research topics cover:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design

Some of the frequent publication venues where their work appears include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • arXiv (Cornell University)
  • 2021 IEEE International Electron Devices Meeting (IEDM)

Among recent papers authored by Khan are:

  • The future of ferroelectric field-effect transistor technology (2020), published in Nature Electronics
  • Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition (2020), published in Nanotechnology (co-authored by Jae Hur)
  • BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update (2022), published in IEEE Transactions on Electron Devices
  • Antiferroelectric negative capacitance from a structural phase transition in zirconia (2022), published in Nature Communications
  • Nonvolatile Capacitive Crossbar Array for In-Memory Computing (2022), published in Advanced Intelligent Systems

Frequent co-authors collaborating with Khan include:

  • Shimeng Yu
  • Jae Hur
  • Suman Datta
  • Nujhat Tasneem
  • Zheng Wang

Khan received the IEEE Fellow award in 2006 for contributions to the development of III-nitride electronic sensor systems.

Best Publications

  • Negative Capacitance in a Ferroelectric Capacitor

    Asif Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Negative capacitance in a ferroelectric capacitor.

    Asif Islam Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • The future of ferroelectric field-effect transistor technology

    Asif Islam Khan;Ali Keshavarzi;Suman Datta

  • Spatially resolved steady-state negative capacitance.

    Ajay K. Yadav;Kayla X. Nguyen;Zijian Hong;Pablo García-Fernández

  • Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

    Asif Islam Khan;Debanjan Bhowmik;Pu Yu;Sung Joo Kim

  • Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

    Asif I. Khan;Chun W. Yeung;Chenming Hu;Sayeef Salahuddin

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

  • Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

    Asif Islam Khan;Korok Chatterjee;Juan Pablo Duarte;Zhongyuan Lu

  • Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

    Cheng-I Lin;Asif Islam Khan;Sayeef Salahuddin;Chenming Hu

  • Single crystal functional oxides on silicon

    Saidur Rahman Bakaul;Claudy Rayan Serrao;Michelle Lee;Chun Wing Yeung

  • Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

    Weiwei Gao;Asif Khan;Xavi Marti;Chris Nelson

  • AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

    Grigory Simin;Xuhong Hu;Ahmad Tarakji;Jianping Zhang

  • Negative Capacitance Behavior in a Leaky Ferroelectric

    Asif Islam Khan;Ujwal Radhakrishna;Korok Chatterjee;Sayeef Salahuddin

  • Nonvolatile memory design based on ferroelectric FETs

    Sumitha George;Kaisheng Ma;Ahmedullah Aziz;Xueqing Li

  • High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

    Fatima Husna;Mohamed Lachab;Mahbuba Sultana;Vinod Adivarahan

  • Current‐voltage characteristics of strained piezoelectric structures

    A. Bykhovski;B. Gelmont;M. Shur;A. Khan

  • Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

    Z. Chen;R. S. Qhalid Fareed;M. Gaevski;V. Adivarahan

  • Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

    Korok Chatterjee;Sangwan Kim;Golnaz Karbasian;Ava J. Tan

  • Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

    Asif Islam Khan;Ujwal Radhakrishna;Sayeef Salahuddin;Dimitri Antoniadis

  • Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

    R. Gaska;C. Chen;J. Yang;E. Kuokstis

  • Compact models of negative-capacitance FinFETs: Lumped and distributed charge models

    Juan P. Duarte;Sourabh Khandelwal;Asif I. Khan;Angada Sachid

  • Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

    Xueqing Li;John Sampson;Asif Khan;Kaisheng Ma

  • Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

    Sourabh Khandelwal;Juan Pablo Duarte;Asif Islam Khan;Sayeef Salahuddin

  • Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering

    Zheng Wang;Brian Crafton;Jorge Gomez;Ruijuan Xu

  • Low power negative capacitance FETs for future quantum-well body technology

    Chun Wing Yeung;A. I. Khan;A. Sarker;S. Salahuddin

  • Ferroelectric Negative Capacitance Domain Dynamics

    Michael Hoffmann;Asif Islam Khan;Claudy Serrao;Zhongyuan Lu

Frequent Co-Authors

Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Chenming Hu
Chenming Hu University of California, Berkeley
Suman Datta
Suman Datta Georgia Institute of Technology
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
Lane W. Martin
Lane W. Martin Lawrence Berkeley National Laboratory
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Pu Yu
Pu Yu Tsinghua University

External Links

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