World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7896
World Ranking
4444
National Ranking
1581

Research.com Recognitions

  • 2006 - IEEE Fellow For contributions to the development of III-nitride electronic sensor systems.

Overview

Asif Islam Khan is affiliated with the Georgia Institute of Technology in the United States. Their research focus spans multiple fields and topics primarily related to engineering and materials science, with a special emphasis on electrical and electronic engineering and materials chemistry.

The scientist's main fields of study include:

  • Engineering
  • Materials Science

Their research also extends more specifically into subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Biochemistry
  • Electronic, Optical and Magnetic Materials

Khan's main research topics cover:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design

Some of the frequent publication venues where their work appears include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • arXiv (Cornell University)
  • 2021 IEEE International Electron Devices Meeting (IEDM)

Among recent papers authored by Khan are:

  • The future of ferroelectric field-effect transistor technology (2020), published in Nature Electronics
  • Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition (2020), published in Nanotechnology (co-authored by Jae Hur)
  • BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update (2022), published in IEEE Transactions on Electron Devices
  • Antiferroelectric negative capacitance from a structural phase transition in zirconia (2022), published in Nature Communications
  • Nonvolatile Capacitive Crossbar Array for In-Memory Computing (2022), published in Advanced Intelligent Systems

Frequent co-authors collaborating with Khan include:

  • Shimeng Yu
  • Jae Hur
  • Suman Datta
  • Nujhat Tasneem
  • Zheng Wang

Khan received the IEEE Fellow award in 2006 for contributions to the development of III-nitride electronic sensor systems.

Best Publications

  • Negative Capacitance in a Ferroelectric Capacitor

    Asif Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • Negative capacitance in a ferroelectric capacitor.

    Asif Islam Khan;Korok Chatterjee;Brian Wang;Steven Drapcho

  • The future of ferroelectric field-effect transistor technology

    Asif Islam Khan;Ali Keshavarzi;Suman Datta

  • Spatially resolved steady-state negative capacitance.

    Ajay K. Yadav;Kayla X. Nguyen;Zijian Hong;Pablo García-Fernández

  • Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

    Asif Islam Khan;Debanjan Bhowmik;Pu Yu;Sung Joo Kim

  • Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation

    Asif I. Khan;Chun W. Yeung;Chenming Hu;Sayeef Salahuddin

  • Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

    Michael Hoffmann;Milan Pešić;Korok Chatterjee;Asif I. Khan

  • Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

    Asif Islam Khan;Korok Chatterjee;Juan Pablo Duarte;Zhongyuan Lu

  • Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

    Cheng-I Lin;Asif Islam Khan;Sayeef Salahuddin;Chenming Hu

  • Single crystal functional oxides on silicon

    Saidur Rahman Bakaul;Claudy Rayan Serrao;Michelle Lee;Chun Wing Yeung

  • Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

    Weiwei Gao;Asif Khan;Xavi Marti;Chris Nelson

  • AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

    Grigory Simin;Xuhong Hu;Ahmad Tarakji;Jianping Zhang

  • Negative Capacitance Behavior in a Leaky Ferroelectric

    Asif Islam Khan;Ujwal Radhakrishna;Korok Chatterjee;Sayeef Salahuddin

  • Nonvolatile memory design based on ferroelectric FETs

    Sumitha George;Kaisheng Ma;Ahmedullah Aziz;Xueqing Li

  • High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

    Fatima Husna;Mohamed Lachab;Mahbuba Sultana;Vinod Adivarahan

  • Current‐voltage characteristics of strained piezoelectric structures

    A. Bykhovski;B. Gelmont;M. Shur;A. Khan

  • Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

    Z. Chen;R. S. Qhalid Fareed;M. Gaevski;V. Adivarahan

  • Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

    Korok Chatterjee;Sangwan Kim;Golnaz Karbasian;Ava J. Tan

  • Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

    Asif Islam Khan;Ujwal Radhakrishna;Sayeef Salahuddin;Dimitri Antoniadis

  • Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

    R. Gaska;C. Chen;J. Yang;E. Kuokstis

  • Compact models of negative-capacitance FinFETs: Lumped and distributed charge models

    Juan P. Duarte;Sourabh Khandelwal;Asif I. Khan;Angada Sachid

  • Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET

    Xueqing Li;John Sampson;Asif Khan;Kaisheng Ma

  • Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

    Sourabh Khandelwal;Juan Pablo Duarte;Asif Islam Khan;Sayeef Salahuddin

  • Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering

    Zheng Wang;Brian Crafton;Jorge Gomez;Ruijuan Xu

  • Low power negative capacitance FETs for future quantum-well body technology

    Chun Wing Yeung;A. I. Khan;A. Sarker;S. Salahuddin

  • Ferroelectric Negative Capacitance Domain Dynamics

    Michael Hoffmann;Asif Islam Khan;Claudy Serrao;Zhongyuan Lu

Frequent Co-Authors

Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Ramamoorthy Ramesh
Ramamoorthy Ramesh Rice University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Chenming Hu
Chenming Hu University of California, Berkeley
Suman Datta
Suman Datta Georgia Institute of Technology
Michael J. Hoffmann
Michael J. Hoffmann Karlsruhe Institute of Technology
Lane W. Martin
Lane W. Martin Lawrence Berkeley National Laboratory
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Remis Gaska
Remis Gaska UVTON, Inc.
Pu Yu
Pu Yu Tsinghua University

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