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Genquan Han

Genquan Han

Xidian University
China

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 41 4320 4146 658 656 345 6351

Genquan Han publications per year

The chart shows the history of publications by Genquan Han between 2008 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Genquan Han published across 18 years, from 2008 to 2025, averaging 26.1 papers a year. Output peaked at 72 publications in 2024. 127 of the 470 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 2008 to 2025. Vertical axis: number of publications, 0 to 72. Peak 72 publications in 2024. 2008: 1 publication 2009: 2 publications 2010: 5 publications 2011: 6 publications 2012: 25 publications 2013: 27 publications 2014: 9 publications 2015: 18 publications 2016: 15 publications 2017: 24 publications 2018: 30 publications 2019: 26 publications 2020: 19 publications 2021: 34 publications 2022: 39 publications 2023: 63 publications 2024: 72 publications 2025: 55 publications
2008 2025

470 publications in total across all disciplines

View publications per year as a table
Genquan Han: publications per year, 2008 to 2025
Year Publications
2008 1
2009 2
2010 5
2011 6
2012 25
2013 27
2014 9
2015 18
2016 15
2017 24
2018 30
2019 26
2020 19
2021 34
2022 39
2023 63
2024 72
2025 55
Total 470
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Genquan Han publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Genquan Han sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 345 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 345
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Genquan Han D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Genquan Han sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 41 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187 41
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Genquan Han is affiliated with Xidian University in China and has contributed extensively to research in the fields of engineering and materials science. Their scholarly work spans a range of topics centered on semiconductor devices, ferroelectric and negative capacitance devices, advanced memory and neural computing, as well as photonic and optical materials.

Their prominent research interests include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Photonic and Optical Devices
  • Ferroelectric and Piezoelectric Materials

Genquan Han has published significantly in subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Electronic, Optical and Magnetic Materials. Additional research aligns with Biomedical Engineering and Atomic and Molecular Physics, and Optics.

The scientist has been frequently published in these venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Science China Information Sciences
  • Journal of Semiconductors
  • Nanoscale Research Letters

Among their recent papers are:

  • "Recent progress of integrated circuits and optoelectronic chips," 2021, Science China Information Sciences
  • "High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces," 2021, Opto-Electronic Advances
  • "Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification," 2020, IEEE Transactions on Neural Networks and Learning Systems
  • "Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing," 2022, ACS Nano
  • "A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide," 2020, Advanced Electronic Materials

Genquan Han collaborates frequently with a group of coauthors, reflecting extensive joint research efforts. Notable collaborators include Yan Liu, Yue Hao, Xiao Yu, and Yue Peng, with collaboration counts ranging from several dozens to over one hundred joint works.

Best Publications

  • Electronic band structure and effective mass parameters of Ge1-xSnx alloys

    Kain Lu Low;Yue Yang;Genquan Han;Weijun Fan

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

  • Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

    Peng-Fei Guo;Li-Tao Yang;Yue Yang;Lu Fan

  • Recent progress of integrated circuits and optoelectronic chips

    Yue Hao;Shuiying Xiang;Genquan Han;Jincheng Zhang

  • Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

    Xiao Gong;Genquan Han;Fan Bai;Shaojian Su

  • Negative Differential Resistance in Negative Capacitance FETs

    Jiuren Zhou;Genquan Han;Jing Li;Yan Liu

  • Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures

    Lu Huang;Qian Feng;Genquan Han;Fuguo Li

  • High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

    Cizhe Fang;Qiyu Yang;Qingchen Yuan

  • (AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity

    Qian Feng;Xiang Li;Genquan Han;Lu Huang

  • High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

    Genquan Han;Shaojian Su;Chunlei Zhan;Qian Zhou

  • Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification

    Shuiying Xiang;Zhenxing Ren;Ziwei Song;Yahui Zhang

  • Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

    Ran Cheng;Wei Wang;Xiao Gong;Linfeng Sun

  • A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

    Li Chen;Lin Wang;Yue Peng;Xuewei Feng

  • Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

    Genquan Han;Pengfei Guo;Yue Yang;Chunlei Zhan

  • Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

    Jiuren Zhou;Genquan Han;Yue Peng;Yan Liu

  • Comparison Study of $eta $ -Ga 2 O 3 Photodetectors on Bulk Substrate and Sapphire

    Qian Feng;Lu Huang;Genquan Han;Fuguo Li

  • Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO x

    Jiuren Zhou;Yue Peng;Genquan Han;Qinglong Li

  • A review: Photonics devices, architectures, and algorithms for optical neural computing

    Shuiying Xiang;Yanan Han;Ziwei Song;Xingxing Guo

  • First Demonstration of Waferscale Heterogeneous Integration of Ga 2 O 3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

    Wenhui Xu;Yuhao Zhang;Yue Hao;Xi Wang

  • Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

    Yue Yang;Shaojian Su;Pengfei Guo;Wei Wang

  • GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

    Genquan Han;Yibo Wang;Yan Liu;Chunfu Zhang

  • Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

    Hongjuan Wang;Genquan Han;Yan Liu;Shengdong Hu

Frequent Co-Authors

Yue Hao
Yue Hao Xidian University
Jincheng Zhang
Jincheng Zhang Xidian University
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Chunfu Zhang
Chunfu Zhang Xidian University
Xiao Gong
Xiao Gong National University of Singapore
Bin Liu
Bin Liu National University of Singapore
David Wei Zhang
David Wei Zhang Fudan University
Jingjing Chang
Jingjing Chang Xidian University
Tadatomo Suga
Tadatomo Suga Meisei University
Yang Hao
Yang Hao Queen Mary University of London

External Links

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Best Scientists Citing Genquan Han

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Publications: 42

Yee-Chia Yeo

Yee-Chia Yeo

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Publications: 38

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Xidian University

Publications: 36

Chunfu Zhang

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Xidian University

Publications: 33

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 31

J. M. Hartmann

J. M. Hartmann

CEA LETI

Publications: 24

Zoran Ikonic

Zoran Ikonic

University of Leeds

Publications: 23

Chuan Seng Tan

Chuan Seng Tan

Nanyang Technological University

Publications: 23

S. Mantl

S. Mantl

Forschungszentrum Jülich

Publications: 21

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Justin D. Holmes

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Publications: 18

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Publications: 16

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Publications: 15

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Publications: 14

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