Genquan Han

Overview

Best Publications

• Electronic band structure and effective mass parameters of Ge1-xSnx alloys

  Kain Lu Low;Yue Yang;Genquan Han;Weijun Fan

  286
  Citations

• Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

  Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

  165
  Citations

• Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

  Peng-Fei Guo;Li-Tao Yang;Yue Yang;Lu Fan

  127
  Citations

• Recent progress of integrated circuits and optoelectronic chips

  Yue Hao;Shuiying Xiang;Genquan Han;Jincheng Zhang

  124
  Citations

• Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

  Xiao Gong;Genquan Han;Fan Bai;Shaojian Su

  123
  Citations

• Negative Differential Resistance in Negative Capacitance FETs

  Jiuren Zhou;Genquan Han;Jing Li;Yan Liu

  119
  Citations

• Comparison Study of β-Ga2O3 Photodetectors Grown on Sapphire at Different Oxygen Pressures

  Lu Huang;Qian Feng;Genquan Han;Fuguo Li

  115
  Citations

• High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

  Cizhe Fang;Qiyu Yang;Qingchen Yuan

  115
  Citations

• (AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity

  Qian Feng;Xiang Li;Genquan Han;Lu Huang

  114
  Citations

• High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

  Genquan Han;Shaojian Su;Chunlei Zhan;Qian Zhou

  110
  Citations

• Computing Primitive of Fully VCSEL-Based All-Optical Spiking Neural Network for Supervised Learning and Pattern Classification

  Shuiying Xiang;Zhenxing Ren;Ziwei Song;Yahui Zhang

  94
  Citations

• Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

  Ran Cheng;Wei Wang;Xiao Gong;Linfeng Sun

  93
  Citations

• A van der Waals Synaptic Transistor Based on Ferroelectric Hf 0.5 Zr 0.5 O 2 and 2D Tungsten Disulfide

  Li Chen;Lin Wang;Yue Peng;Xuewei Feng

  92
  Citations

• Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

  Genquan Han;Pengfei Guo;Yue Yang;Chunlei Zhan

  85
  Citations

• Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing

  Jiuren Zhou;Genquan Han;Yue Peng;Yan Liu

  82
  Citations

• Comparison Study of $eta $ -Ga 2 O 3 Photodetectors on Bulk Substrate and Sapphire

  Qian Feng;Lu Huang;Genquan Han;Fuguo Li

  79
  Citations

• Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrO x

  Jiuren Zhou;Yue Peng;Genquan Han;Qinglong Li

  76
  Citations

• A review: Photonics devices, architectures, and algorithms for optical neural computing

  Shuiying Xiang;Yanan Han;Ziwei Song;Xingxing Guo

  73
  Citations

• First Demonstration of Waferscale Heterogeneous Integration of Ga 2 O 3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

  Wenhui Xu;Yuhao Zhang;Yue Hao;Xi Wang

  72
  Citations

• Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

  Yue Yang;Shaojian Su;Pengfei Guo;Wei Wang

  71
  Citations

• GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

  Genquan Han;Yibo Wang;Yan Liu;Chunfu Zhang

  68
  Citations

• Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET

  Hongjuan Wang;Genquan Han;Yan Liu;Shengdong Hu

  67
  Citations