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Tadatomo Suga

Tadatomo Suga

D-Index & Metrics

Materials Science

D-Index
61
Citations
13583
World Ranking
6776
National Ranking
355

Overview

Tadatomo Suga is affiliated with Meisei University in Japan and has an extensive publication record in the fields of engineering and materials science. Their research spans several subfields, including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, biomedical engineering, and condensed matter physics.

The main topics of their work highlight a focus on semiconductor and electronic materials, with particular attention to 3D IC and TSV technologies, electronic packaging and soldering technologies, Ga2O3 and related materials, semiconductor materials and devices, GaN-based semiconductor devices and materials, ZnO doping and properties, and thermal properties of materials.

Frequent publication venues for their research include:

  • ACS Applied Materials & Interfaces
  • ECS Meeting Abstracts
  • Applied Surface Science
  • Micromachines
  • Japanese Journal of Applied Physics

Notable recent papers authored or coauthored by them include:

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices (2020, ACS Applied Materials & Interfaces)
  • Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces (2020, ACS Applied Materials & Interfaces)
  • β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process (2020, Science China Physics Mechanics and Astronomy)
  • Enhanced adhesion and anticorrosion of silk fibroin coated biodegradable Mg-Zn-Ca alloy via a two-step plasma activation (2020, Corrosion Science)
  • Microfluidic chip connected to porous microneedle array for continuous ISF sampling (2021, Drug Delivery and Translational Research)

Collaborations form a significant aspect of their research activities, with frequent coauthors including Fengwen Mu, Kai Takeuchi, Xin Ou, Tiangui You, and Chenxi Wang.

Best Publications

  • DISPOSITIF A SEMI-CONDUCTEUR ET SON PROCEDE DE FABRICATION

    Suga Tadatomo

  • Surface activated bonding of silicon wafers at room temperature

    H. Takagi;K. Kikuchi;R. Maeda;T. R. Chung

  • Room temperature Cu-Cu direct bonding using surface activated bonding method

    T. H. Kim;M. M. R. Howlader;T. Itoh;T. Suga

  • Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

    T. Suga;Y. Takahashi;H. Takagi;B. Gibbesch

  • Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

    Hideki Takagi;Ryutaro Maeda;Teak Ryong Chung;Naoe Hosoda

  • Self-excited piezoelectric PZT microcantilevers for dynamic SFM—with inherent sensing and actuating capabilities

    Chengkuo Lee;Toshihiro Itoh;Tadatomo Suga

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.

    Zhe Cheng;Fengwen Mu;Fengwen Mu;Luke Yates;Tadatomo Suga

  • Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method

    Hideki Takagi;Ryutaro Maeda;Teak Ryong Chung;Tadatomo Suga

  • Low-Temperature Bonding of Laser Diode Chips on Silicon Substrates Using Plasma Activation of Au Films

    E. Higurashi;T. Imamura;T. Suga;R. Sawada

  • Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method

    A. Shigetou;T. Itoh;M. Matsuo;N. Hayasaka

  • Development of a force sensor for atomic force microscopy using piezoelectric thin films

    T Itoh;T Suga

  • Composite Parameters and Mechanical Compatibility of Material Joints

    T. Suga;G. Elssner;S. Schmauder

  • High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces.

    Fengwen Mu;Zhe Cheng;Jingjing Shi;Seongbin Shin

  • Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure

    E. Higurashi;D. Chino;T. Suga;R. Sawada

  • Micromachined piezoelectric force sensors based on PZT thin films

    Chengkuo Lee;T. Itoh;T. Suga

  • Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

    Hideki Takagi;Ryutaro Maeda;Naoe Hosoda;Tadatomo Suga

  • Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method

    Taek Ryong Chung;Liu Yang;Naoe Hosoda;Hidegi Takagi

  • Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation

    Hideki Takagi;Ryutaro Maeda;Naoe hosoda;Tadatomo Suga

  • Deflection detection and feedback actuation using a self‐excited piezoelectric Pb(Zr,Ti)O3 microcantilever for dynamic scanning force microscopy

    T. Itoh;C. Lee;T. Suga

  • Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

    Fengwen Mu;Ran He;Tadatomo Suga

  • Wafer-scale spontaneous bonding of silicon wafers by argon-beam surface activation at room temperature

    Hideki Takagi;Ryutaro Maeda;Tadatomo Suga

  • Room-temperature wafer bonding of Si to LiNbO3, LiTaO3 and Gd3Ga5O12 by Ar-beam surface activation

    Hideki Takagi;Ryutaro Maeda;Tadatomo Suga

Frequent Co-Authors

Toshihiro Itoh
Toshihiro Itoh University of Tokyo
Ryutaro Maeda
Ryutaro Maeda National Institute of Advanced Industrial Science and Technology
Chengkuo Lee
Chengkuo Lee National University of Singapore
Tetsuya Kawanishi
Tetsuya Kawanishi Waseda University
Samuel Graham
Samuel Graham Georgia Institute of Technology
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Yoshio Bando
Yoshio Bando University of Wollongong
Hoang-Phuong Phan
Hoang-Phuong Phan University of New South Wales
Manfred Rühle
Manfred Rühle Max Planck Society
Nam-Trung Nguyen
Nam-Trung Nguyen Griffith University

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