World's Best Scientists 2026 revealed!
Tadatomo Suga

Tadatomo Suga

D-Index & Metrics

Materials Science

D-Index
61
Citations
13583
World Ranking
6774
National Ranking
355

Tadatomo Suga publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tadatomo Suga sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 693 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tadatomo Suga D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tadatomo Suga sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tadatomo Suga is affiliated with Meisei University in Japan and has an extensive publication record in the fields of engineering and materials science. Their research spans several subfields, including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, biomedical engineering, and condensed matter physics.

The main topics of their work highlight a focus on semiconductor and electronic materials, with particular attention to 3D IC and TSV technologies, electronic packaging and soldering technologies, Ga2O3 and related materials, semiconductor materials and devices, GaN-based semiconductor devices and materials, ZnO doping and properties, and thermal properties of materials.

Frequent publication venues for their research include:

  • ACS Applied Materials & Interfaces
  • ECS Meeting Abstracts
  • Applied Surface Science
  • Micromachines
  • Japanese Journal of Applied Physics

Notable recent papers authored or coauthored by them include:

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices (2020, ACS Applied Materials & Interfaces)
  • Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces (2020, ACS Applied Materials & Interfaces)
  • β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process (2020, Science China Physics Mechanics and Astronomy)
  • Enhanced adhesion and anticorrosion of silk fibroin coated biodegradable Mg-Zn-Ca alloy via a two-step plasma activation (2020, Corrosion Science)
  • Microfluidic chip connected to porous microneedle array for continuous ISF sampling (2021, Drug Delivery and Translational Research)

Collaborations form a significant aspect of their research activities, with frequent coauthors including Fengwen Mu, Kai Takeuchi, Xin Ou, Tiangui You, and Chenxi Wang.

Best Publications

  • DISPOSITIF A SEMI-CONDUCTEUR ET SON PROCEDE DE FABRICATION

    Suga Tadatomo

  • Surface activated bonding of silicon wafers at room temperature

    H. Takagi;K. Kikuchi;R. Maeda;T. R. Chung

  • Room temperature Cu-Cu direct bonding using surface activated bonding method

    T. H. Kim;M. M. R. Howlader;T. Itoh;T. Suga

  • Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

    T. Suga;Y. Takahashi;H. Takagi;B. Gibbesch

  • Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

    Hideki Takagi;Ryutaro Maeda;Teak Ryong Chung;Naoe Hosoda

  • Self-excited piezoelectric PZT microcantilevers for dynamic SFM—with inherent sensing and actuating capabilities

    Chengkuo Lee;Toshihiro Itoh;Tadatomo Suga

  • Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.

    Zhe Cheng;Fengwen Mu;Fengwen Mu;Luke Yates;Tadatomo Suga

  • Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method

    Hideki Takagi;Ryutaro Maeda;Teak Ryong Chung;Tadatomo Suga

  • Low-Temperature Bonding of Laser Diode Chips on Silicon Substrates Using Plasma Activation of Au Films

    E. Higurashi;T. Imamura;T. Suga;R. Sawada

  • Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method

    A. Shigetou;T. Itoh;M. Matsuo;N. Hayasaka

  • Development of a force sensor for atomic force microscopy using piezoelectric thin films

    T Itoh;T Suga

  • Composite Parameters and Mechanical Compatibility of Material Joints

    T. Suga;G. Elssner;S. Schmauder

  • High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces.

    Fengwen Mu;Zhe Cheng;Jingjing Shi;Seongbin Shin

  • Au–Au Surface-Activated Bonding and Its Application to Optical Microsensors With 3-D Structure

    E. Higurashi;D. Chino;T. Suga;R. Sawada

  • Micromachined piezoelectric force sensors based on PZT thin films

    Chengkuo Lee;T. Itoh;T. Suga

  • Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

    Hideki Takagi;Ryutaro Maeda;Naoe Hosoda;Tadatomo Suga

  • Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method

    Taek Ryong Chung;Liu Yang;Naoe Hosoda;Hidegi Takagi

  • Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation

    Hideki Takagi;Ryutaro Maeda;Naoe hosoda;Tadatomo Suga

  • Deflection detection and feedback actuation using a self‐excited piezoelectric Pb(Zr,Ti)O3 microcantilever for dynamic scanning force microscopy

    T. Itoh;C. Lee;T. Suga

  • Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

    Fengwen Mu;Ran He;Tadatomo Suga

  • Wafer-scale spontaneous bonding of silicon wafers by argon-beam surface activation at room temperature

    Hideki Takagi;Ryutaro Maeda;Tadatomo Suga

  • Room-temperature wafer bonding of Si to LiNbO3, LiTaO3 and Gd3Ga5O12 by Ar-beam surface activation

    Hideki Takagi;Ryutaro Maeda;Tadatomo Suga

Frequent Co-Authors

Toshihiro Itoh
Toshihiro Itoh University of Tokyo
Ryutaro Maeda
Ryutaro Maeda National Institute of Advanced Industrial Science and Technology
Chengkuo Lee
Chengkuo Lee National University of Singapore
Tetsuya Kawanishi
Tetsuya Kawanishi Waseda University
Samuel Graham
Samuel Graham Georgia Institute of Technology
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Yoshio Bando
Yoshio Bando University of Wollongong
Hoang-Phuong Phan
Hoang-Phuong Phan University of New South Wales
Manfred Rühle
Manfred Rühle Max Planck Society
Nam-Trung Nguyen
Nam-Trung Nguyen Griffith University

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