World's Best Scientists 2026 revealed!
Yoshiaki Nakano

Yoshiaki Nakano

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
10005
World Ranking
2928
National Ranking
103

Yoshiaki Nakano publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yoshiaki Nakano sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,041 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yoshiaki Nakano D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yoshiaki Nakano sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yoshiaki Nakano is affiliated with the University of Tokyo in Japan and has a research focus primarily within the field of Engineering, with a notable concentration in Electrical and Electronic Engineering. Their work spans multiple subfields including Atomic and Molecular Physics, and Optics, as well as Artificial Intelligence and Biomedical Engineering, indicating a diverse interdisciplinary engagement.

The scientist's main research topics revolve around photonic and optical devices, a field where they have contributed to 86 publications. Other significant topics include optical network technologies, neural networks and reservoir computing, advanced photonic communication systems, solar cell performance optimization, semiconductor quantum structures and devices, and random lasers and scattering media.

Frequent collaborators in Nakano's research activity include Takuo Tanemura, Ryota Tanomura, Masakazu Sugiyama, Taichiro Fukui, and Go Soma, with whom they have a substantial number of coauthored works.

Nakano has published extensively in venues such as the Japanese Journal of Applied Physics, arXiv (Cornell University), Journal of Lightwave Technology, Optics Express, and physica status solidi (a), with publication counts reflecting sustained research output in these journals and repositories.

Among Nakano's recent papers are the following:

  • Ten-Port Unitary Optical Processor on a Silicon Photonic Chip, 2021, ACS Photonics
  • Single-Pixel Imaging Using Multimode Fiber and Silicon Photonic Phased Array, 2020, Journal of Lightwave Technology
  • Non-redundant optical phased array, 2021, Optica
  • Scalable and Robust Photonic Integrated Unitary Converter Based on Multiplane Light Conversion, 2022, Physical Review Applied
  • Large-Scale Monolithic InP-Based Optical Phased Array, 2021, IEEE Photonics Technology Letters

Best Publications

  • Talbot interferometry for measuring the focal length of a lens.

    Yoshiaki Nakano;Kazumi Murata

  • Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift.

    Hideki Yokoi;Tetsuya Mizumoto;Nobuhiro Shinjo;Naoki Futakuchi

  • All-optical flip-flop multimode interference bistable laser diode

    M. Takenaka;M. Raburn;Y. Nakano

  • Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition

    Sang Woo Lim;Yukihiro Shimogaki;Yoshiaki Nakano;Kunio Tada

  • Purely gain-coupled distributed feedback semiconductor lasers

    Y. Luo;Y. Nakano;K. Tada;T. Inoue

  • Fabrication and characterization of an InGaAsP/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation

    H. Shimizu;Y. Nakano

  • Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Hisashi Yamada

  • Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping

    Mitsuru Takenaka;Kiyohito Morii;Masakazu Sugiyama;Yoshiaki Nakano

  • Measurements of phase objects using the Talbot effect and moire techniques.

    Yoshiaki Nakano;Kazumi Murata

  • Ten-Port Unitary Optical Processor on a Silicon Photonic Chip

    Unknown

  • 100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells

    Hiromasa Fujii;Kasidit Toprasertpong;Yunpeng Wang;Kentaroh Watanabe

  • Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell

    Katsushi Fujii;Shinichiro Nakamura;Masakazu Sugiyama;Kentaroh Watanabe

  • Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential

    Hao Feng;J.P. Pang;M. Sugiyama;K. Tada

  • III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Noriyuki Miyata

  • Multimode interference bistable laser diode

    M. Takenaka;Y. Nakano

  • Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer

    Y. Luo;Y. Nakano;K. Tada;T. Inoue

  • Non-redundant optical phased array

    Unknown

  • Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation

    K. Tada;Y. Nakano;A. Ushirokawa

  • Reduction of excess intensity noise induced by external reflection in a gain-coupled distributed feedback semiconductor laser

    Y. Nakano;Y. Deguchi;K. Ikeda;Y. Luo

  • Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates

    Touichiro Goto;Yoshitada Katagiri;Hiroshi Fukuda;Hiroyuki Shinojima

  • Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

    Kasidit Toprasertpong;Hiromasa Fujii;Tomos Thomas;Markus Führer

  • From sewing thread to sensor: Nylon® fiber strain and pressure sensors

    Yarjan Abdul Samad;Kento Komatsu;Daiji Yamashita;Yuanqing Li

Frequent Co-Authors

Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Tetsuya Mizumoto
Tetsuya Mizumoto Tokyo Institute of Technology
Shinichi Takagi
Shinichi Takagi University of Tokyo
Yoshitaka Okada
Yoshitaka Okada University of Tokyo
Jean-François Guillemoles
Jean-François Guillemoles Centre national de la recherche scientifique, CNRS
Roel Baets
Roel Baets Ghent University
Geert Morthier
Geert Morthier Ghent University
Nicola Calabretta
Nicola Calabretta Eindhoven University of Technology
Seiji Samukawa
Seiji Samukawa Tohoku University
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University

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