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Yoshiaki Nakano

Yoshiaki Nakano

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
10005
World Ranking
2928
National Ranking
103

Overview

Yoshiaki Nakano is affiliated with the University of Tokyo in Japan and has a research focus primarily within the field of Engineering, with a notable concentration in Electrical and Electronic Engineering. Their work spans multiple subfields including Atomic and Molecular Physics, and Optics, as well as Artificial Intelligence and Biomedical Engineering, indicating a diverse interdisciplinary engagement.

The scientist's main research topics revolve around photonic and optical devices, a field where they have contributed to 86 publications. Other significant topics include optical network technologies, neural networks and reservoir computing, advanced photonic communication systems, solar cell performance optimization, semiconductor quantum structures and devices, and random lasers and scattering media.

Frequent collaborators in Nakano's research activity include Takuo Tanemura, Ryota Tanomura, Masakazu Sugiyama, Taichiro Fukui, and Go Soma, with whom they have a substantial number of coauthored works.

Nakano has published extensively in venues such as the Japanese Journal of Applied Physics, arXiv (Cornell University), Journal of Lightwave Technology, Optics Express, and physica status solidi (a), with publication counts reflecting sustained research output in these journals and repositories.

Among Nakano's recent papers are the following:

  • Ten-Port Unitary Optical Processor on a Silicon Photonic Chip, 2021, ACS Photonics
  • Single-Pixel Imaging Using Multimode Fiber and Silicon Photonic Phased Array, 2020, Journal of Lightwave Technology
  • Non-redundant optical phased array, 2021, Optica
  • Scalable and Robust Photonic Integrated Unitary Converter Based on Multiplane Light Conversion, 2022, Physical Review Applied
  • Large-Scale Monolithic InP-Based Optical Phased Array, 2021, IEEE Photonics Technology Letters

Best Publications

  • Talbot interferometry for measuring the focal length of a lens.

    Yoshiaki Nakano;Kazumi Murata

  • Demonstration of an Optical Isolator with a Semiconductor Guiding Layer that was Obtained by Use of a Nonreciprocal Phase Shift.

    Hideki Yokoi;Tetsuya Mizumoto;Nobuhiro Shinjo;Naoki Futakuchi

  • All-optical flip-flop multimode interference bistable laser diode

    M. Takenaka;M. Raburn;Y. Nakano

  • Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition

    Sang Woo Lim;Yukihiro Shimogaki;Yoshiaki Nakano;Kunio Tada

  • Purely gain-coupled distributed feedback semiconductor lasers

    Y. Luo;Y. Nakano;K. Tada;T. Inoue

  • Fabrication and characterization of an InGaAsP/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation

    H. Shimizu;Y. Nakano

  • Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Hisashi Yamada

  • Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping

    Mitsuru Takenaka;Kiyohito Morii;Masakazu Sugiyama;Yoshiaki Nakano

  • Measurements of phase objects using the Talbot effect and moire techniques.

    Yoshiaki Nakano;Kazumi Murata

  • Ten-Port Unitary Optical Processor on a Silicon Photonic Chip

    Unknown

  • 100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells

    Hiromasa Fujii;Kasidit Toprasertpong;Yunpeng Wang;Kentaroh Watanabe

  • Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell

    Katsushi Fujii;Shinichiro Nakamura;Masakazu Sugiyama;Kentaroh Watanabe

  • Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential

    Hao Feng;J.P. Pang;M. Sugiyama;K. Tada

  • III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Noriyuki Miyata

  • Multimode interference bistable laser diode

    M. Takenaka;Y. Nakano

  • Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer

    Y. Luo;Y. Nakano;K. Tada;T. Inoue

  • Non-redundant optical phased array

    Unknown

  • Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation

    K. Tada;Y. Nakano;A. Ushirokawa

  • Reduction of excess intensity noise induced by external reflection in a gain-coupled distributed feedback semiconductor laser

    Y. Nakano;Y. Deguchi;K. Ikeda;Y. Luo

  • Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates

    Touichiro Goto;Yoshitada Katagiri;Hiroshi Fukuda;Hiroyuki Shinojima

  • Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

    Kasidit Toprasertpong;Hiromasa Fujii;Tomos Thomas;Markus Führer

  • From sewing thread to sensor: Nylon® fiber strain and pressure sensors

    Yarjan Abdul Samad;Kento Komatsu;Daiji Yamashita;Yuanqing Li

Frequent Co-Authors

Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Tetsuya Mizumoto
Tetsuya Mizumoto Tokyo Institute of Technology
Shinichi Takagi
Shinichi Takagi University of Tokyo
Jean-François Guillemoles
Jean-François Guillemoles Centre national de la recherche scientifique, CNRS
Roel Baets
Roel Baets Ghent University
Geert Morthier
Geert Morthier Ghent University
Seiji Samukawa
Seiji Samukawa Tohoku University
Nicola Calabretta
Nicola Calabretta Eindhoven University of Technology
Hiroshi Toshiyoshi
Hiroshi Toshiyoshi University of Tokyo
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University

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