Eva Monroy mainly focuses on Optoelectronics, Wide-bandgap semiconductor, Photodetector, Molecular beam epitaxy and Epitaxy. Eva Monroy has included themes like Sapphire and Quantum well in her Optoelectronics study. Her Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Wavelength, Doping, Monolayer, Absorption and Superlattice.
Her study in Photodetector is interdisciplinary in nature, drawing from both Detector, Semiconductor and Ultraviolet. Her Molecular beam epitaxy study combines topics in areas such as Photoluminescence, Crystallography, Quantum dot, Condensed matter physics and Wurtzite crystal structure. Her Epitaxy research includes elements of Crystal growth and Full width at half maximum.
Eva Monroy mostly deals with Optoelectronics, Quantum well, Quantum dot, Condensed matter physics and Molecular beam epitaxy. Optoelectronics is frequently linked to Epitaxy in her study. Her Quantum well study which covers Gallium nitride that intersects with Aluminium nitride.
Her Condensed matter physics research focuses on Photoluminescence and how it connects with Doping, Luminescence and Quantum efficiency. Her Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Crystallography, Crystal growth, Monolayer and Substrate. Her work carried out in the field of Photodetector brings together such families of science as Schottky diode, Photodiode and Ultraviolet.
Optoelectronics, Nanowire, Heterojunction, Quantum well and Photoluminescence are her primary areas of study. Her Optoelectronics research integrates issues from Ultrashort pulse, Laser and Absorption. Her Nanowire research is multidisciplinary, relying on both Detector, Photodetector, Dielectric, Superconductivity and Superconducting nanowire single-photon detector.
Her studies in Heterojunction integrate themes in fields like Photocurrent, Photodetection, Terahertz radiation, Laser linewidth and Electronic band structure. Her Quantum well research incorporates themes from Wide-bandgap semiconductor, Exciton, Condensed matter physics, Stark effect and Nitride. Her work deals with themes such as Excited state, Doping, Dopant and Sputtering, which intersect with Photoluminescence.
Eva Monroy mainly focuses on Optoelectronics, Nanowire, Heterojunction, Photoluminescence and Wide-bandgap semiconductor. Her work often combines Optoelectronics and Photovoltaic system studies. Her Nanowire research is multidisciplinary, incorporating perspectives in Detector, Photodetector, Absorption, Infrared and Dielectric.
Her Heterojunction research integrates issues from Photocurrent and Photodetection. Her Photoluminescence research includes elements of Quantum well, Condensed matter physics, Doping and Sputtering. Her Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Multiple quantum, Capacitance, Carrier lifetime and Energy conversion efficiency.
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Wide-bandgap semiconductor ultraviolet photodetectors
E Monroy;F Omnès;F Calle.
Semiconductor Science and Technology (2003)
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
M.A. Sanchez-Garcia;E. Calleja;E. Monroy;F.J. Sanchez.
Journal of Crystal Growth (1998)
III nitrides and UV detection
E Muñoz;E Monroy;J L Pau;F Calle.
Journal of Physics: Condensed Matter (2001)
Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells
M. Tchernycheva;L. Nevou;L. Doyennette;F. H. Julien.
Physical Review B (2006)
High-performance GaN p-n junction photodetectors for solar ultraviolet applications
E Monroy;E Muñoz;F J Sánchez;F Calle.
Semiconductor Science and Technology (1998)
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D. Walker;E. Monroy;E. Monroy;P. Kung;J. Wu.
Applied Physics Letters (1999)
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
Prem K. Kandaswamy;Fabien Guillot;Edith Bellet-Amalric;Eva Monroy.
Journal of Applied Physics (2008)
High-quality visible-blind AlGaN p-i-n photodiodes
E. Monroy;M. Hamilton;D. Walker;P. Kung.
Applied Physics Letters (1999)
PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS
E. Muñoz;E. Monroy;J. A. Garrido;I. Izpura.
Applied Physics Letters (1997)
Photoconductive gain modelling of GaN photodetectors
J A Garrido;E Monroy;I Izpura;E Muñoz.
Semiconductor Science and Technology (1998)
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