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Materials Science
France
2022

D-Index & Metrics

Materials Science

D-Index
61
Citations
14348
World Ranking
6736
National Ranking
177

Research.com Recognitions

  • 2022 - Research.com Materials Science in France Leader Award

Overview

Eva Monroy is affiliated with Grenoble Alpes University in France, contributing to research primarily within the fields of Engineering, Physics and Astronomy, and Materials Science. Their work spans a broad range of subfields, including Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Materials Chemistry.

The scientist's research focuses extensively on semiconductor materials and devices, especially GaN-based semiconductor devices and materials. Additional topics include Ga2O3 and related materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Advanced Electron Microscopy Techniques and Applications, and Photocathodes and Microchannel Plates.

Eva Monroy has coauthored publications frequently with colleagues such as David Cooper, Agata Kamińska, Paweł Strąk, Stanisław Krukowski, and Konrad Sakowski.

The scientist publishes often in venues that include:

  • arXiv (Cornell University)
  • Materials
  • BIO Web of Conferences
  • ACS Applied Nano Materials
  • ACS Applied Materials & Interfaces

Some of their recent publications are:

  • Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM, 2022, Nano Letters
  • UV Emission from GaN Wires with m-Plane Core-Shell GaN/AlGaN Multiple Quantum Wells, 2020, ACS Applied Materials & Interfaces
  • Sub-250 fs passively mode-locked ultralong ring fibre oscillators, 2021, Optics & Laser Technology
  • Design and fabrication process flow for high-efficiency and flexible InGaN solar cells, 2023, Micro and Nanostructures
  • Wurtzite quantum well structures under high pressure, 2020, Journal of Applied Physics

Best Publications

  • Wide-bandgap semiconductor ultraviolet photodetectors

    E Monroy;F Omnès;F Calle

  • The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

    M.A. Sanchez-Garcia;E. Calleja;E. Monroy;F.J. Sanchez

  • III nitrides and UV detection

    E Muñoz;E Monroy;J L Pau;F Calle

  • Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells

    M. Tchernycheva;L. Nevou;L. Doyennette;F. H. Julien

  • High-performance GaN p-n junction photodetectors for solar ultraviolet applications

    E Monroy;E Muñoz;F J Sánchez;F Calle

  • High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

    D. Walker;E. Monroy;E. Monroy;P. Kung;J. Wu

  • GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

    Prem K. Kandaswamy;Fabien Guillot;Edith Bellet-Amalric;Eva Monroy

  • III-nitride semiconductors for intersubband optoelectronics: a review

    M Beeler;E Trichas;E Monroy

  • AlGaN-based UV photodetectors

    E. Monroy;F. Calle;J.L. Pau;E. Muñoz

  • Photoconductive gain modelling of GaN photodetectors

    J A Garrido;E Monroy;I Izpura;E Muñoz

  • PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS

    E. Muñoz;E. Monroy;J. A. Garrido;I. Izpura

  • High-quality visible-blind AlGaN p-i-n photodiodes

    E. Monroy;M. Hamilton;D. Walker;P. Kung

  • AlGaN metal–semiconductor–metal photodiodes

    E. Monroy;F. Calle;E. Muñoz;F. Omnès

  • Room-temperature photodetection dynamics of single GaN nanowires.

    F. González-Posada;R. Songmuang;M. Den Hertog;E. Monroy

  • Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

    A. Vardi;G. Bahir;F. Guillot;C. Bougerol

  • Wide bandgap UV photodetectors: a short review of devices and applications

    Franck Omnès;Eva Monroy;Elias Muñoz;Jean-Luc Reverchon

  • Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

    Erini Sarigiannidou;Fabrice Wilhelm;Eva Monroy;Rose-Marie Galéra

  • Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

    E. Monroy;F. Calle;J. L. Pau;F. J. Sánchez

  • Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

    N. Gogneau;D. Jalabert;E. Monroy;T. Shibata

  • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

    A. Helman;M. Tchernycheva;A. Lusson;E. Warde

Frequent Co-Authors

Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Fernando Calle
Fernando Calle Technical University of Madrid
Pierre Gibart
Pierre Gibart Centre national de la recherche scientifique, CNRS
B. Daudin
B. Daudin Grenoble Alpes University
Miguel Gonzalez-Herraez
Miguel Gonzalez-Herraez University of Alcalá
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Bernard Beaumont
Bernard Beaumont Centre national de la recherche scientifique, CNRS
Martin Eickhoff
Martin Eickhoff University of Bremen
Raffaele Colombelli
Raffaele Colombelli University of Paris-Saclay

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